JP2016054474A - 半導体装置及び半導体装置の駆動方法 - Google Patents
半導体装置及び半導体装置の駆動方法 Download PDFInfo
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- JP2016054474A JP2016054474A JP2015039837A JP2015039837A JP2016054474A JP 2016054474 A JP2016054474 A JP 2016054474A JP 2015039837 A JP2015039837 A JP 2015039837A JP 2015039837 A JP2015039837 A JP 2015039837A JP 2016054474 A JP2016054474 A JP 2016054474A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
- H03L7/0995—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop the oscillator comprising a ring oscillator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
【解決手段】発振回路は、第1乃至第nのインバータと、第1の回路と、第2の回路と、を有する。第1及び第2の回路の第1の端子は、第iのインバータの出力端子と電気的に接続される。第1及び第2の回路の第2の端子は、第i+1のインバータの入力端子と電気的に接続される。第1の回路は、第1のデータを格納する機能を有する。第1の回路は、第1の端子と第2の端子とを非導通にするか、第1の端子と第2の端子との間の抵抗値を第1のデータに基づいた値にするかを切り替える機能を有し、第2の回路は、第2のデータを格納する機能を有する。第2の回路は、第1の端子と第2の端子とを非導通にするか、第1の端子と第2の端子との間の抵抗値を第2のデータに基づいた値にするかを切り替える機能を有する。
【選択図】図1
Description
本実施の形態では、本発明の一態様に係る装置について説明する。本発明の一態様に係る装置にトランジスタ等の半導体素子を用いる場合、本発明の一態様に係る装置を半導体装置と呼んでもよい。
本実施の形態では、実施の形態1において説明した装置を用いたPLLについて説明する。
〈半導体装置の断面構造の例〉
図8に、図1に例示する装置の断面構造を、一例として示す。トランジスタ22はトランジスタ105に対応し、トランジスタ23はトランジスタ106に対応する。なお、破線A1−A2で示す領域では、トランジスタ22及びトランジスタ23のチャネル長方向における構造を示しており、破線A3−A4で示す領域では、トランジスタ22及びトランジスタ23のチャネル幅方向における構造を示している。ただし、本発明の一態様では、トランジスタ22のチャネル長方向とトランジスタ23のチャネル長方向とが、必ずしも一致していなくともよい。
次いで、酸化物半導体膜にチャネル形成領域を有するトランジスタ90の構成例について説明する。
図11に、図1に例示する装置の断面構造を、一例として示す。
〈電子機器の例〉
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機、医療機器などが挙げられる。これら電子機器の具体例を図12に示す。
23 トランジスタ
90 トランジスタ
91 絶縁膜
92a 酸化物半導体膜
92b 酸化物半導体膜
92c 酸化物半導体膜
93 導電膜
94 導電膜
95 絶縁膜
96 導電膜
97 基板
101 回路
102 回路
103 インバータ
103A NAND回路
104 回路
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 容量素子
201 位相比較器
202 ループフィルタ
203 電圧制御発振器
204 分周器
400 基板
401 素子分離領域
402 不純物領域
403 不純物領域
404 チャネル形成領域
405 絶縁膜
406 ゲート電極
411 絶縁膜
412 導電膜
413 導電膜
414 導電膜
416 導電膜
417 導電膜
418 導電膜
420 絶縁膜
421 絶縁膜
422 絶縁膜
430 半導体膜
430a 酸化物半導体膜
430c 酸化物半導体膜
431 ゲート絶縁膜
432 導電膜
433 導電膜
434 ゲート電極
601 半導体基板
610 素子分離領域
611 絶縁膜
612 絶縁膜
613 絶縁膜
625 導電膜
626 導電膜
627 導電膜
634 導電膜
635 導電膜
636 導電膜
637 導電膜
644 導電膜
651 導電膜
652 導電膜
653 導電膜
661 絶縁膜
662 ゲート絶縁膜
663 絶縁膜
701 半導体膜
710 領域
711 領域
721 導電膜
722 導電膜
731 ゲート電極
801 回路
802 回路
803 インバータ
804 回路
805 トランジスタ
806 トランジスタ
807 トランジスタ
808 容量素子
809a バッファ
809b バッファ
810 バッファ
812a 回路
812b 回路
813a インバータ
813b インバータ
813c インバータ
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5101 車体
5102 車輪
5103 ダッシュボード
5104 ライト
5301 筐体
5302 冷蔵室用扉
5303 冷凍室用扉
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 筐体
5803 表示部
5804 操作キー
5805 レンズ
5806 接続部
Claims (7)
- 発振回路を有し、
前記発振回路は、第1乃至第n(nは3以上の奇数)のインバータと、第1の回路と、第2の回路と、を有し、
前記第1の回路の第1の端子は、前記第i(iは1乃至n−1のいずれか一)のインバータの出力端子と電気的に接続され、
前記第1の回路の第2の端子は、前記第i+1のインバータの入力端子と電気的に接続され、
前記第2の回路の第1の端子は、前記第iのインバータの出力端子と電気的に接続され、
前記第2の回路の第2の端子は、前記第i+1のインバータの入力端子と電気的に接続され、
前記第1の回路は、第1のデータを格納する機能を有し、
前記第1の回路は、第1の端子と第2の端子とを非導通にするか、第1の端子と第2の端子との間の抵抗値を前記第1のデータに基づいた値にするかを切り替える機能を有し、
前記第2の回路は、第2のデータを格納する機能を有し、
前記第2の回路は、第1の端子と第2の端子とを非導通にするか、第1の端子と第2の端子との間の抵抗値を前記第2のデータに基づいた値にするかを切り替える機能を有することを特徴とする半導体装置。 - 請求項1において、
前記第1のデータ及び前記第2のデータは、アナログ電位であることを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第1の回路は、第1のトランジスタと、第1の容量素子と、を有し、
前記第2の回路は、第2のトランジスタと、第2の容量素子と、を有し、
前記第1のデータは、前記第1のトランジスタを介して前記第1の容量素子に入力され、
前記第2のデータは、前記第2のトランジスタを介して前記第2の容量素子に入力され、
前記第1のトランジスタは、チャネル形成領域に酸化物半導体を有し、
前記第2のトランジスタは、チャネル形成領域に酸化物半導体を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の回路は、第3のトランジスタと、第4のトランジスタと、を有し、
前記第2の回路は、第5のトランジスタと、第6のトランジスタと、を有し、
前記第3のトランジスタ及び前記第4のトランジスタは、前記第1の回路の第1の端子と前記第1の回路の第2の端子との間に直列に電気的に接続され、
前記第5のトランジスタ及び前記第6のトランジスタは、前記第2の回路の第1の端子と前記第2の回路の第2の端子との間に直列に電気的に接続され、
前記第3のトランジスタのソースとドレインとの間の抵抗値は、前記第1のデータに基づいた値を有し、
前記第4のトランジスタは、前記第1の回路の第1の端子と前記第1の回路の第2の端子との導通又は非導通を制御する機能を有し、
前記第5のトランジスタのソースとドレインとの間の抵抗値は、前記第1のデータに基づいた値を有し、
前記第6のトランジスタは、前記第2の回路の第1の端子と前記第2の回路の第2の端子との導通又は非導通を制御する機能を有することを特徴とする半導体装置。 - 発振回路を有し、
前記発振回路は、第1乃至第n(nは3以上の奇数)のインバータと、第1の回路と、第2の回路と、を有し、
前記第1の回路の第1の端子は、前記第i(iは1乃至n−1のいずれか一)のインバータの出力端子と電気的に接続され、
前記第1の回路の第2の端子は、前記第i+1のインバータの入力端子と電気的に接続され、
前記第2の回路の第1の端子は、前記第iのインバータの出力端子と電気的に接続され、
前記第2の回路の第2の端子は、前記第i+1のインバータの入力端子と電気的に接続される半導体装置の駆動方法であって、
前記第1の回路に第1のデータを格納することにより、前記発振回路の発振周波数を第1の値に設定し、
前記第2の回路に第2のデータを格納することにより、前記発振回路の発振周波数を第2の値に設定し、
前記第1の回路に第3のデータを格納することにより、前記発振回路の発振周波数を前記第1の値と概ね等しい値に設定し、
前記第2の回路に第4のデータを格納することにより、前記発振回路の発振周波数を前記第2の値と概ね等しい値に設定し、
前記第3のデータは、前記第1のデータよりも大きい値であり、
前記第4のデータは、前記第2のデータよりも大きい値であることを特徴とする半導体装置の駆動方法。 - 請求項5において、
前記第1のデータ、前記第2のデータ、前記第3のデータ及び前記第4のデータは、アナログ電位であることを特徴とする半導体装置の駆動方法。 - 請求項5又は請求項6において、
前記第1の回路は、第1のトランジスタと、第1の容量素子と、を有し、
前記第2の回路は、第2のトランジスタと、第2の容量素子と、を有し、
前記第1のトランジスタは、チャネル形成領域に酸化物半導体を有し、
前記第2のトランジスタは、チャネル形成領域に酸化物半導体を有し、
前記第1のトランジスタを介して前記第1のデータ又は前記第3のデータを前記第1の容量素子に入力し、
前記第2のトランジスタを介して前記第2のデータ又は前記第4のデータを前記第2の容量素子に入力することを特徴とする半導体装置の駆動方法。
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JP6590488B2 (ja) | 2019-10-16 |
JP6910401B2 (ja) | 2021-07-28 |
TW201547210A (zh) | 2015-12-16 |
KR20160130761A (ko) | 2016-11-14 |
JP2020010388A (ja) | 2020-01-16 |
SG11201606645VA (en) | 2016-09-29 |
TWI670942B (zh) | 2019-09-01 |
CN106134078B (zh) | 2019-05-28 |
US9479145B2 (en) | 2016-10-25 |
DE112015001133T5 (de) | 2016-12-01 |
CN106134078A (zh) | 2016-11-16 |
US20150256161A1 (en) | 2015-09-10 |
KR102264584B1 (ko) | 2021-06-11 |
US9929736B2 (en) | 2018-03-27 |
WO2015132696A1 (en) | 2015-09-11 |
US20170019117A1 (en) | 2017-01-19 |
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