JP2016051794A - 半導体素子及び結晶積層構造体 - Google Patents
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Abstract
【解決手段】一実施の形態として、アクセプタ不純物を含むβ−Ga2O3系単結晶からなる高抵抗基板11と、高抵抗基板11上の、β−Ga2O3系単結晶からなるバッファ層12と、バッファ層12上の、ドナー不純物を含むβ−Ga2O3系単結晶からなるチャネル層13と、を有する、Ga2O3系半導体素子10を提供する。
【選択図】図1
Description
第1の実施の形態は、半導体素子としてMESFETを用いる形態である。
図1は、第1の実施の形態に係るGa2O3系半導体素子10の垂直断面図である。Ga2O3系半導体素子10は、高抵抗基板11上に形成されたバッファ層12と、バッファ層12上に形成されたチャネル層13と、チャネル層13上に形成されたソース電極15及びドレイン電極16と、ソース電極15とドレイン電極16との間のチャネル層13上に形成されたゲート電極14と、チャネル層13中のソース電極15及びドレイン電極16の下に形成されたコンタクト領域17を含む。
図5は、アクセプタ不純物としてFeを含む高抵抗Ga2O3基板上に、Ga2O3エピタキシャル層を成長させた場合の、深さとFeの濃度の関係を表す測定データである。この深さは、高抵抗Ga2O3基板とGa2O3エピタキシャル層との界面の位置を原点としている。
第2の実施の形態は、バッファ層の上層及びチャネル層がアクセプタ不純物を含まない点で第1の実施の形態と異なる。なお、第1の実施の形態と同様の点については、説明を省略又は簡略化する。
図8は、第2の実施の形態に係るGa2O3系半導体素子20の垂直断面図である。Ga2O3系半導体素子20は、高抵抗基板11上に形成されたバッファ層22と、バッファ層22上に形成されたチャネル層23と、チャネル層23上に形成されたソース電極15及びドレイン電極16と、ソース電極15とドレイン電極16との間のチャネル層23上に形成されたゲート電極14と、チャネル層23中のソース電極15及びドレイン電極16の下に形成されたコンタクト領域17を含む。
第3の実施の形態は、半導体素子としてMISFET(Metal Insulator Semiconductor Field Effect Transistor)を用いる形態である。なお、第1の実施の形態と同様の点については、説明を省略又は簡略化する。
図9は、第3の実施の形態に係るGa2O3系半導体素子30の垂直断面図である。Ga2O3系半導体素子30は、高抵抗基板11上に形成されたバッファ層12と、バッファ層12上に形成されたチャネル層13と、チャネル層13上に形成されたソース電極15及びドレイン電極16と、ソース電極15とドレイン電極16との間のチャネル層13上にゲート絶縁膜31を介して形成されたゲート電極14と、チャネル層13中のソース電極15及びドレイン電極16の下に形成されたコンタクト領域17を含む。
第4の実施の形態は、半導体素子としてMISFETを用いる形態である。なお、第2及び第3の実施の形態と同様の点については、説明を省略又は簡略化する。
図10は、第4の実施の形態に係るGa2O3系半導体素子40の垂直断面図である。Ga2O3系半導体素子40は、高抵抗基板11上に形成されたバッファ層22と、バッファ層22上に形成されたチャネル層23と、チャネル層23上に形成されたソース電極15及びドレイン電極16と、ソース電極15とドレイン電極16との間のチャネル層23上にゲート絶縁膜31を介して形成されたゲート電極14と、チャネル層23中のソース電極15及びドレイン電極16の下に形成されたコンタクト領域17を含む。
上記第1〜4の実施の形態によれば、高抵抗基板から拡散されるアクセプタ不純物のチャネル層の濃度が低い、又はアクセプタ不純物がチャネル層にほとんど含まれないため、キャリア補償によるチャネル層の高抵抗化を抑えることができる。
本発明の一態様は、上記目的を達成するために、以下の[1]〜[5]の半導体素子を提供する。
本発明の一態様は、上記目的を達成するために、以下の[1]〜[4]の半導体素子を提供する。
Claims (11)
- アクセプタ不純物を含むβ−Ga2O3系単結晶からなる高抵抗基板と、
前記高抵抗基板上の、β−Ga2O3系単結晶からなるバッファ層と、
前記バッファ層上の、ドナー不純物を含むβ−Ga2O3系単結晶からなるチャネル層と、
を有する、半導体素子。 - 前記バッファ層及び前記チャネル層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含み、
前記チャネル層の前記アクセプタ不純物の濃度が前記バッファ層の前記アクセプタ不純物の濃度よりも低く、
前記チャネル層の前記ドナー不純物の濃度が前記チャネル層の前記アクセプタ不純物の濃度よりも高い、
請求項1に記載の半導体素子。 - 前記バッファ層の前記高抵抗基板側の下層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含み、
前記バッファ層の前記チャネル層側の上層及び前記チャネル層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含まない、
請求項1に記載の半導体素子。 - 前記高抵抗基板の主面の面方位が(001)である、
請求項1〜3のいずれか1項に記載の半導体素子。 - 前記アクセプタ不純物は、Fe、Be、Mg、及びZnのうちの少なくとも1つを含む、
請求項1〜4のいずれか1項に記載の半導体素子。 - MESFET又はMOSFETである、
請求項1〜5のいずれか1項に記載の半導体素子。 - アクセプタ不純物を含むβ−Ga2O3系単結晶からなる高抵抗基板と、
前記高抵抗基板上の、β−Ga2O3系単結晶からなるバッファ層と、
前記バッファ層上の、ドナー不純物を含むβ−Ga2O3系単結晶からなるドナー不純物含有層と、
を有する、結晶積層構造体。 - 前記バッファ層及び前記ドナー不純物含有層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含み、
前記ドナー不純物含有層の前記アクセプタ不純物の濃度が前記バッファ層の前記アクセプタ不純物の濃度よりも低く、
前記ドナー不純物含有層の前記ドナー不純物の濃度が前記ドナー不純物含有層の前記アクセプタ不純物の濃度よりも高い、
請求項7に記載の結晶積層構造体。 - 前記バッファ層の前記高抵抗基板側の下層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含み、
前記バッファ層の前記ドナー不純物含有層側の上層及び前記ドナー不純物含有層が、前記高抵抗基板から拡散した前記アクセプタ不純物を含まない、
請求項7に記載の結晶積層構造体。 - 前記高抵抗基板の主面の面方位が(001)である、
請求項7〜9のいずれか1項に記載の結晶積層構造体。 - 前記アクセプタ不純物は、Fe、Be、Mg、及びZnのうちの少なくとも1つを含む、
請求項7〜10のいずれか1項に記載の結晶積層構造体。
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JP2014175913A JP5907465B2 (ja) | 2014-08-29 | 2014-08-29 | 半導体素子及び結晶積層構造体 |
DE112015003943.0T DE112015003943B4 (de) | 2014-08-29 | 2015-08-18 | Halbleiterelement und kristalline Laminatstruktur |
US15/507,158 US10861945B2 (en) | 2014-08-29 | 2015-08-18 | Semiconductor element and crystalline laminate structure |
CN201580046341.5A CN107078063B (zh) | 2014-08-29 | 2015-08-18 | 半导体元件和晶体层叠结构体 |
PCT/JP2015/073150 WO2016031633A1 (ja) | 2014-08-29 | 2015-08-18 | 半導体素子及び結晶積層構造体 |
TW104127704A TWI660406B (zh) | 2014-08-29 | 2015-08-25 | 半導體元件及結晶積層構造體 |
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JP7008293B2 (ja) * | 2017-04-27 | 2022-01-25 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
CN107369707B (zh) * | 2017-06-07 | 2020-03-24 | 西安电子科技大学 | 基于4H-SiC衬底异质结自旋场效应晶体管及其制造方法 |
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CN107481939B (zh) * | 2017-07-20 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | 帽层结构氧化镓场效应晶体管的制备方法 |
TW202006945A (zh) * | 2018-07-12 | 2020-02-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
TW202013716A (zh) * | 2018-07-12 | 2020-04-01 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
CN112424947A (zh) * | 2018-07-12 | 2021-02-26 | 株式会社Flosfia | 半导体装置及包含半导体装置的半导体系统 |
TW202018819A (zh) * | 2018-07-12 | 2020-05-16 | 日商Flosfia股份有限公司 | 半導體裝置和半導體系統 |
CN110880529A (zh) * | 2018-09-05 | 2020-03-13 | 财团法人工业技术研究院 | 半导体元件及其制造方法 |
CN113614292B (zh) * | 2019-03-28 | 2024-08-23 | 日本碍子株式会社 | 半导体膜 |
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US11462402B2 (en) * | 2020-10-21 | 2022-10-04 | Cornell University | Suboxide molecular-beam epitaxy and related structures |
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