JP2016046514A - エッチング液組成物 - Google Patents
エッチング液組成物 Download PDFInfo
- Publication number
- JP2016046514A JP2016046514A JP2015100944A JP2015100944A JP2016046514A JP 2016046514 A JP2016046514 A JP 2016046514A JP 2015100944 A JP2015100944 A JP 2015100944A JP 2015100944 A JP2015100944 A JP 2015100944A JP 2016046514 A JP2016046514 A JP 2016046514A
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- JP
- Japan
- Prior art keywords
- etching
- weight
- oxide semiconductor
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
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Abstract
Description
しかし、下記実施例及び比較例は本発明を例示するためのものであって、本発明は下記実施例及び比較例に限らずに多様に修正及び変更される。
下記表1に記載された成分含量で各成分を混合して本発明による実施例1乃至4及び比較例1乃至3の組成物を製造した。
ATZ:5−アミノテトラゾール(5−aminotetrazole)
IDA:イミノジ酢酸(iminodiacetic acid)
SHS:硫酸水素ナトリウム(Sodium hydrogen sulfate)
MEA:モノエタノールアミン(Monoethanolamine)
HMTA:ヘキサメチレンテトラミン(Hexamethylenetetramine)
ABF:重フッ化アンモニウム(ammonium bifluoride)
本発明によるエッチング液の効果を評価するために、ガラス基板の上にモリブデン合金膜を300Åの厚さに蒸着し、前記モリブデン合金膜の上に銅膜を2500Åの厚さに蒸着した。次に、フォトリソグラフィ工程を行ってパターンを形成し、試片を製造した。
102:ゲート絶縁膜 103:半導体層
104:ソース電極 105:ドレイン電極
106:保護膜
Claims (18)
- 過酸化水素、エッチング抑制剤、キレイト剤、エッチング添加剤、酸化物半導体保護剤及びpH調節剤を含み、
前記酸化物半導体保護剤は組成物の総重量に対して0.1乃至3重量%が含まれることを特徴とするエッチング液組成物。 - 前記エッチング抑制剤は、
酸素、硫黄又は窒素のうちから選択される一つ以上のヘテロ原子を含む炭素数1乃至10のヘテロ環化合物であることを特徴とする請求項1に記載のエッチング液組成物。 - 前記キレイト剤はアミノ基とカルボン酸基を有する化合物であることを特徴とする請求項1に記載のエッチング液組成物。
- 前記エッチング添加剤は有機酸、無機酸又はそれらの塩、窒素及び硫黄を含む化合物であることを特徴とする請求項1に記載のエッチング液組成物。
- 前記酸化物半導体保護剤はアミン化合物を含むことを特徴とする請求項1に記載のエッチング液組成物。
- 前記pH調節剤は炭酸ナトリウム、水酸化ナトリウム、水酸化カリウム又はアンモニアを一つ以上含むことを特徴とする請求項1に記載のエッチング液組成物。
- 前記エッチング液組成物のpHが3.5乃至6であることを特徴とする請求項1に記載のエッチング液組成物。
- 5乃至40重量%の過酸化水素と、
0.1乃至5重量%のエッチング抑制剤と、
0.1乃至5重量%のキレイト剤と、
0.1乃至5重量%のエッチング添加剤と、
0.1乃至3重量%の酸化物半導体保護剤と、
0.1乃至3重量%のpH調節剤と、
全体組成物の総重量が100重量%になるようにする水と、を含むことを特徴とする請求項1に記載のエッチング液組成物。 - 基板の上にゲート電極を形成するステップと、
基板の上にゲート絶縁膜を形成するステップと、
前記ゲート絶縁膜の上に酸化物半導体で形成される半導体層を形成するステップと、
前記半導体層の上にソース電極及びドレイン電極を形成するステップと、を含む薄膜トランジスタアレイ基板の製造方法であって、
前記ソース電極及び前記ドレイン電極はそれぞれ第1電極層物質と前記第1電極層物質の上に前記第2電極層物質が配置される2重層構造であり、
前記ソース電極及びドレイン電極を形成するステップは、
前記半導体層を含む基板の上に前記第1電極層物質を形成するステップと、
前記第1電極層物質の上に第2電極層物質を形成するステップと、
前記第1電極層物質及び第2電極層物質をエッチング液組成物を利用して一括にエッチングするステップと、を含み、
前記エッチング液組成物は、
過酸化水素、エッチング抑制剤、キレイト剤、エッチング添加剤、酸化物半導体保護剤及びpH調節剤を含み、前記酸化物半導体保護剤は組成物の総重量に対して0.1乃至3重量%が含まれる、薄膜トランジスタアレイ基板の製造方法。 - 前記半導体層はIGZO(Indium Gallium Zinc Oxide)、IZO(Indium Zinc Oxide)、IGO(Indium Gallium Oxide)、In2O3又はそれらの組み合わせからなる物質である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第1電極層物質はモリブデン合金であって、前記第2電極層物質は銅である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記エッチング抑制剤は、
酸素、硫黄又は窒素のうちから選択される一つ以上のヘテロ原子を含む炭素数1乃至10のヘテロ環化合物である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記キレイト剤はアミノ基とカルボン酸基を有する化合物である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記エッチング添加剤は有機酸、無機酸又はそれらの塩、窒素及び硫黄を含む化合物である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記酸化物半導体保護剤はアミン化合物を含む請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記pH調節剤は炭酸ナトリウム、水酸化ナトリウム、水酸化カリウム又はアンモニアを一つ以上含む請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記エッチング液組成物のpHが3.5乃至6である請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
- 5乃至40重量%の過酸化水素と、
0.1乃至5重量%のエッチング抑制剤と、
0.1乃至5重量%のキレイト剤と、
0.1乃至5重量%のエッチング添加剤と、
0.1乃至3重量%の酸化物半導体保護剤と、
0.1乃至3重量%のpH調節剤と、
全体組成物の総重量が100重量%になるようにする水と、を含む請求項9に記載の薄膜トランジスタアレイ基板の製造方法。
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2014
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2015
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- 2015-05-11 CN CN201510236752.2A patent/CN105369249B/zh active Active
- 2015-05-12 TW TW104115057A patent/TWI546417B/zh active
- 2015-05-18 JP JP2015100944A patent/JP2016046514A/ja active Pending
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2017
- 2017-07-07 JP JP2017133231A patent/JP6574221B2/ja active Active
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JP2023521828A (ja) * | 2020-04-14 | 2023-05-25 | インテグリス・インコーポレーテッド | モリブデンをエッチングするための方法及び組成物 |
JP7399314B2 (ja) | 2020-04-14 | 2023-12-15 | インテグリス・インコーポレーテッド | モリブデンをエッチングするための方法及び組成物 |
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US20160053382A1 (en) | 2016-02-25 |
TWI546417B (zh) | 2016-08-21 |
JP2017201712A (ja) | 2017-11-09 |
CN105369249A (zh) | 2016-03-02 |
KR102255577B1 (ko) | 2021-05-25 |
CN105369249B (zh) | 2018-05-29 |
TW201608062A (zh) | 2016-03-01 |
JP2019165240A (ja) | 2019-09-26 |
KR20160025081A (ko) | 2016-03-08 |
JP6574221B2 (ja) | 2019-09-11 |
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