JP2016012609A - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP2016012609A
JP2016012609A JP2014132482A JP2014132482A JP2016012609A JP 2016012609 A JP2016012609 A JP 2016012609A JP 2014132482 A JP2014132482 A JP 2014132482A JP 2014132482 A JP2014132482 A JP 2014132482A JP 2016012609 A JP2016012609 A JP 2016012609A
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JP
Japan
Prior art keywords
gas
etching
chamber
film
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014132482A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016012609A5 (OSRAM
Inventor
戸田　聡
Satoshi Toda
聡 戸田
信博 ▲高▼橋
信博 ▲高▼橋
Nobuhiro Takahashi
宏幸 ▲高▼橋
宏幸 ▲高▼橋
Hiroyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2014132482A priority Critical patent/JP2016012609A/ja
Priority to TW104119586A priority patent/TWI648790B/zh
Priority to US14/743,390 priority patent/US20150380268A1/en
Priority to KR1020150088197A priority patent/KR101802580B1/ko
Publication of JP2016012609A publication Critical patent/JP2016012609A/ja
Publication of JP2016012609A5 publication Critical patent/JP2016012609A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
    • G05B19/182—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by the machine tool function, e.g. thread cutting, cam making, tool direction control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Human Computer Interaction (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
JP2014132482A 2014-06-27 2014-06-27 エッチング方法 Pending JP2016012609A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014132482A JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法
TW104119586A TWI648790B (zh) 2014-06-27 2015-06-17 Etching method
US14/743,390 US20150380268A1 (en) 2014-06-27 2015-06-18 Etching method and storage medium
KR1020150088197A KR101802580B1 (ko) 2014-06-27 2015-06-22 에칭 방법 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014132482A JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法

Publications (2)

Publication Number Publication Date
JP2016012609A true JP2016012609A (ja) 2016-01-21
JP2016012609A5 JP2016012609A5 (OSRAM) 2017-06-15

Family

ID=54931310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014132482A Pending JP2016012609A (ja) 2014-06-27 2014-06-27 エッチング方法

Country Status (4)

Country Link
US (1) US20150380268A1 (OSRAM)
JP (1) JP2016012609A (OSRAM)
KR (1) KR101802580B1 (OSRAM)
TW (1) TWI648790B (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111584360A (zh) * 2019-02-18 2020-08-25 东京毅力科创株式会社 蚀刻方法
JP2021525459A (ja) * 2018-06-01 2021-09-24 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. 非プラズマエッチング方法
JP2023520218A (ja) * 2020-04-01 2023-05-16 ラム リサーチ コーポレーション 半導体材料の精密な選択性エッチング

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
CN108251895A (zh) 2016-12-29 2018-07-06 江苏鲁汶仪器有限公司 一种氟化氢气相腐蚀设备及方法
WO2018220973A1 (ja) * 2017-05-30 2018-12-06 東京エレクトロン株式会社 エッチング方法
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7065254B2 (ja) * 2020-04-10 2022-05-11 株式会社日立ハイテク エッチング方法
KR20250005413A (ko) * 2021-04-28 2025-01-09 도쿄엘렉트론가부시키가이샤 에칭 방법

Citations (9)

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JPH03204930A (ja) * 1989-10-02 1991-09-06 Dainippon Screen Mfg Co Ltd 絶縁膜の選択的除去方法
JP2005302897A (ja) * 2004-04-08 2005-10-27 Sony Corp ハードエッチングマスクの除去方法および半導体装置の製造方法
JP2005327847A (ja) * 2004-05-13 2005-11-24 Toshiba Corp 半導体装置及びその製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates
JP2010066597A (ja) * 2008-09-11 2010-03-25 Shin-Etsu Chemical Co Ltd パターン形成方法
JP2012043919A (ja) * 2010-08-18 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2013154427A (ja) * 2012-01-30 2013-08-15 Renesas Electronics Corp 半導体集積回路装置の製造方法
CN103435002A (zh) * 2013-08-05 2013-12-11 中航（重庆）微电子有限公司 Mems牺牲层刻蚀方法
JP2014022653A (ja) * 2012-07-20 2014-02-03 Tokyo Electron Ltd 成膜装置及び成膜方法

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US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US7025831B1 (en) * 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
JP2002050609A (ja) 2000-08-01 2002-02-15 Asm Japan Kk 半導体基板の処理方法
JP3526284B2 (ja) * 2001-07-13 2004-05-10 エム・エフエスアイ株式会社 基板表面の処理方法
JP4833512B2 (ja) 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP2006167849A (ja) 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
SG10201508025VA (en) * 2005-10-05 2015-10-29 Entegris Inc Composition and method for selectively etching gate spacer oxide material
JP5084250B2 (ja) 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP2012117144A (ja) * 2010-11-30 2012-06-21 Imec 正確に制御されたマスク陽極酸化のための方法
CN103476702B (zh) * 2010-12-07 2016-02-10 Spts科技有限公司 用于制造机电系统的方法
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP6494226B2 (ja) * 2014-09-16 2019-04-03 東京エレクトロン株式会社 エッチング方法

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JPH03204930A (ja) * 1989-10-02 1991-09-06 Dainippon Screen Mfg Co Ltd 絶縁膜の選択的除去方法
JP2005302897A (ja) * 2004-04-08 2005-10-27 Sony Corp ハードエッチングマスクの除去方法および半導体装置の製造方法
JP2005327847A (ja) * 2004-05-13 2005-11-24 Toshiba Corp 半導体装置及びその製造方法
US20060207968A1 (en) * 2005-03-08 2006-09-21 Mumbauer Paul D Selective etching of oxides from substrates
JP2010066597A (ja) * 2008-09-11 2010-03-25 Shin-Etsu Chemical Co Ltd パターン形成方法
JP2012043919A (ja) * 2010-08-18 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
JP2013154427A (ja) * 2012-01-30 2013-08-15 Renesas Electronics Corp 半導体集積回路装置の製造方法
JP2014022653A (ja) * 2012-07-20 2014-02-03 Tokyo Electron Ltd 成膜装置及び成膜方法
CN103435002A (zh) * 2013-08-05 2013-12-11 中航（重庆）微电子有限公司 Mems牺牲层刻蚀方法

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岩井洋、角嶋邦之、川那子高暢: "ゲートスタック技術", 表面科学, vol. 33, no. 11, JPN6018032327, November 2012 (2012-11-01), JP, pages 600 - 609, ISSN: 0003863412 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525459A (ja) * 2018-06-01 2021-09-24 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. 非プラズマエッチング方法
JP7187581B2 (ja) 2018-06-01 2022-12-12 北京北方華創微電子装備有限公司 非プラズマエッチング方法
CN111584360A (zh) * 2019-02-18 2020-08-25 东京毅力科创株式会社 蚀刻方法
CN111584360B (zh) * 2019-02-18 2024-04-19 东京毅力科创株式会社 蚀刻方法
JP2023520218A (ja) * 2020-04-01 2023-05-16 ラム リサーチ コーポレーション 半導体材料の精密な選択性エッチング

Also Published As

Publication number Publication date
TW201612976A (en) 2016-04-01
TWI648790B (zh) 2019-01-21
KR20160001656A (ko) 2016-01-06
KR101802580B1 (ko) 2017-11-28
US20150380268A1 (en) 2015-12-31

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