JP2015533023A - フォトミキサおよびその製造方法 - Google Patents
フォトミキサおよびその製造方法 Download PDFInfo
- Publication number
- JP2015533023A JP2015533023A JP2015532961A JP2015532961A JP2015533023A JP 2015533023 A JP2015533023 A JP 2015533023A JP 2015532961 A JP2015532961 A JP 2015532961A JP 2015532961 A JP2015532961 A JP 2015532961A JP 2015533023 A JP2015533023 A JP 2015533023A
- Authority
- JP
- Japan
- Prior art keywords
- photomixer
- active layer
- region
- light
- heat conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- 230000003667 anti-reflective effect Effects 0.000 claims description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- -1 InGaAsP Inorganic materials 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 abstract description 11
- 239000008358 core component Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- 230000005284 excitation Effects 0.000 description 16
- 238000001451 molecular beam epitaxy Methods 0.000 description 12
- 238000011161 development Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 239000012212 insulator Substances 0.000 description 8
- 230000001443 photoexcitation Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000010009 beating Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000010356 wave oscillation Effects 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/002—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light using optical mixing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (16)
- 基板の上面に形成されるが、光が入射する領域に形成された活性層と、
前記基板の上面に形成されるが、前記光が入射する領域を除いた残りの領域に形成された熱伝導層とを含むことを特徴とする、フォトミキサ。 - 前記活性層は、メサ型断面を有することを特徴とする、請求項1に記載のフォトミキサ。
- 前記活性層は、GaAs、InGaAs、InGaAsP、InGaAs/InAlAsの多層薄膜構造のうちのいずれか1つで形成されることを特徴とする、請求項1に記載のフォトミキサ。
- 前記熱伝導層は、InP、GaAs、Ge、Si、AlAs、AlGaAsのうちのいずれか1つで構成されることを特徴とする、請求項1に記載のフォトミキサ。
- 前記活性層と前記熱伝導層は、互いに密着していることを特徴とする、請求項1に記載のフォトミキサ。
- 前記活性層の一面に接続され、前記熱伝導層とは離隔した電極パターンを追加的に含むことを特徴とする、請求項1に記載のフォトミキサ。
- 前記光が入射する領域に無反射膜が追加的に形成されるが、前記無反射膜は、前記活性層の上部で形成されたことを特徴とする、請求項1に記載のフォトミキサ。
- 基板の上面に活性層を形成するが、光が入射する領域に前記活性層を形成するステップと、
前記基板の上面に熱伝導層を形成するが、前記光が入射する領域を除いた残りの領域に前記熱伝導層を形成するステップとを含むことを特徴とする、フォトミキサの製造方法。 - 前記活性層を形成するステップは、
前記基板の上面にバッファ層を垂直および水平に成長させるステップと、
前記バッファ層の上面に前記活性層を垂直および水平に成長させるステップと、
前記成長した活性層において前記光が入射する領域を除いた残りの領域をエッチングするステップとを含むことを特徴とする、請求項8に記載のフォトミキサの製造方法。 - 前記活性層を垂直および水平に成長させるステップは、MBE法で前記活性層を低温成長させることを特徴とする、請求項9に記載のフォトミキサの製造方法。
- 前記活性層を垂直および水平に成長させるステップは、MOCVD法で前記活性層を成長させ、その上にイオンインプランテーションを実施することを特徴とする、請求項9に記載のフォトミキサの製造方法。
- 前記活性層は、メサ型断面を有するように形成されることを特徴とする、請求項8に記載のフォトミキサの製造方法。
- 前記熱伝導層を形成するステップは、前記光が入射する領域を除いた領域に、前記熱伝導層をMOCVD法で再成長させて平坦化された表面を有するようにすることを特徴とする、請求項8に記載のフォトミキサの製造方法。
- 前記熱伝導層は、InP、GaAs、Ge、Si、AlAs、AlGaAsのうちのいずれか1つで構成されることを特徴とする、請求項8に記載のフォトミキサの製造方法。
- 前記活性層の一面に接続され、前記熱伝導層とは離隔した電極パターンを形成するステップを追加的に含むことを特徴とする、請求項8に記載のフォトミキサの製造方法。
- 前記光が入射する領域に無反射膜を形成するステップを追加的に含むことを特徴とする、請求項8に記載のフォトミキサの製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0105354 | 2012-09-21 | ||
KR20120105354 | 2012-09-21 | ||
KR1020130032972A KR101700779B1 (ko) | 2012-09-21 | 2013-03-27 | 포토믹서 및 그의 제조방법 |
KR10-2013-0032972 | 2013-03-27 | ||
PCT/KR2013/008415 WO2014046465A1 (ko) | 2012-09-21 | 2013-09-17 | 포토믹서 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015533023A true JP2015533023A (ja) | 2015-11-16 |
JP6391576B2 JP6391576B2 (ja) | 2018-09-19 |
Family
ID=50341690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015532961A Expired - Fee Related JP6391576B2 (ja) | 2012-09-21 | 2013-09-17 | フォトミキサおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9618823B2 (ja) |
JP (1) | JP6391576B2 (ja) |
KR (1) | KR101700779B1 (ja) |
DE (1) | DE112013004626T5 (ja) |
WO (1) | WO2014046465A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9543462B2 (en) * | 2015-03-20 | 2017-01-10 | Xi'an University Of Technology | Insulated-gate photoconductive semiconductor switch |
KR102351574B1 (ko) | 2015-04-30 | 2022-01-14 | 한국전자통신연구원 | 포토 다이오드 |
DE102017129173A1 (de) | 2017-12-07 | 2019-06-13 | Osram Opto Semiconductors Gmbh | Strahlungsquelle zur Emission von Terahertz-Strahlung |
CN115133397B (zh) * | 2022-09-01 | 2023-01-20 | 武汉云岭光电有限公司 | 脊波导半导体激光器及其制备方法 |
Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001111097A (ja) * | 1999-10-05 | 2001-04-20 | Denso Corp | Msm型フォトダイオード |
JP2001148502A (ja) * | 1999-11-22 | 2001-05-29 | Natl Inst Of Advanced Industrial Science & Technology Meti | 電界効果テラヘルツ電磁波発生素子 |
JP2002203984A (ja) * | 2000-10-30 | 2002-07-19 | Nec Corp | 半導体受光素子 |
JP2002368250A (ja) * | 2001-06-05 | 2002-12-20 | Tochigi Nikon Corp | テラヘルツ光発生素子及びテラヘルツ光発生装置 |
JP2005017644A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置及びセンシングシステム |
JP2005538542A (ja) * | 2002-09-04 | 2005-12-15 | テラビュー リミテッド | テラヘルツ放射の発生及び検出用の光伝導性基体上の電極 |
JP2006010319A (ja) * | 2004-06-22 | 2006-01-12 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生・検出装置 |
JP2006066864A (ja) * | 2004-07-30 | 2006-03-09 | Canon Inc | 光半導体装置およびその製造方法 |
JP2006278366A (ja) * | 2005-03-28 | 2006-10-12 | Canon Inc | 電磁波発生・検出素子、およびその製造方法 |
JP2008523629A (ja) * | 2004-12-07 | 2008-07-03 | ピコメトリクス、エルエルシー | 光電導デバイス |
JP2009206484A (ja) * | 2008-01-29 | 2009-09-10 | Canon Inc | パルスレーザおよびテラヘルツ計測装置 |
JP2010010450A (ja) * | 2008-06-27 | 2010-01-14 | Mitsubishi Electric Corp | 導波路型受光素子 |
JP2010056198A (ja) * | 2008-08-27 | 2010-03-11 | Canon Inc | 光伝導素子 |
JP2010521802A (ja) * | 2007-03-15 | 2010-06-24 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | 高速光導電体 |
JP2010169658A (ja) * | 2008-12-25 | 2010-08-05 | Canon Inc | 分析装置 |
JP2010283176A (ja) * | 2009-06-05 | 2010-12-16 | Canon Inc | 光伝導素子、それを用いたテラヘルツ波発生装置及び検出装置 |
JP2011135006A (ja) * | 2009-12-25 | 2011-07-07 | Canon Inc | 発振素子 |
JP2011198801A (ja) * | 2010-03-17 | 2011-10-06 | Canon Inc | 光伝導素子 |
JP2012146758A (ja) * | 2011-01-08 | 2012-08-02 | Canon Inc | テラヘルツ波素子 |
JP2014212301A (ja) * | 2013-04-03 | 2014-11-13 | パイオニア株式会社 | 光伝導基板、電磁波発生検出装置および光伝導基板の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148752A (ja) * | 1994-11-22 | 1996-06-07 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法、及び半導体レーザ装置 |
DE19902612A1 (de) * | 1999-01-23 | 2000-07-27 | Zeiss Carl Fa | Optoelektronischer Mischer |
JP4095746B2 (ja) | 1999-12-17 | 2008-06-04 | 日本オプネクスト株式会社 | 半導体受光装置および製造方法 |
JP4084958B2 (ja) * | 2002-05-24 | 2008-04-30 | 日本オプネクスト株式会社 | 半導体受光装置の製造方法 |
JP4861887B2 (ja) * | 2007-04-20 | 2012-01-25 | 日本オプネクスト株式会社 | 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法 |
KR101385108B1 (ko) | 2009-12-17 | 2014-04-29 | 한국전자통신연구원 | 포토믹서 모듈 및 그것의 테라헤르츠파 발생 방법 |
KR101145778B1 (ko) | 2010-09-17 | 2012-05-16 | 한국전자통신연구원 | 주파수 가변형 테라헤르츠 송수신기들 및 듀얼 파장 레이저의 제작 방법 |
KR101754275B1 (ko) | 2010-12-16 | 2017-07-06 | 한국전자통신연구원 | 테라헤르츠파 송수신 모듈 및 그를 구비한 장치 |
-
2013
- 2013-03-27 KR KR1020130032972A patent/KR101700779B1/ko active IP Right Grant
- 2013-09-17 DE DE112013004626.1T patent/DE112013004626T5/de not_active Withdrawn
- 2013-09-17 JP JP2015532961A patent/JP6391576B2/ja not_active Expired - Fee Related
- 2013-09-17 WO PCT/KR2013/008415 patent/WO2014046465A1/ko active Application Filing
- 2013-09-17 US US14/430,182 patent/US9618823B2/en not_active Expired - Fee Related
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001111097A (ja) * | 1999-10-05 | 2001-04-20 | Denso Corp | Msm型フォトダイオード |
JP2001148502A (ja) * | 1999-11-22 | 2001-05-29 | Natl Inst Of Advanced Industrial Science & Technology Meti | 電界効果テラヘルツ電磁波発生素子 |
JP2002203984A (ja) * | 2000-10-30 | 2002-07-19 | Nec Corp | 半導体受光素子 |
JP2002368250A (ja) * | 2001-06-05 | 2002-12-20 | Tochigi Nikon Corp | テラヘルツ光発生素子及びテラヘルツ光発生装置 |
JP2005538542A (ja) * | 2002-09-04 | 2005-12-15 | テラビュー リミテッド | テラヘルツ放射の発生及び検出用の光伝導性基体上の電極 |
JP2005017644A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 高周波電気信号制御装置及びセンシングシステム |
JP2006010319A (ja) * | 2004-06-22 | 2006-01-12 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生・検出装置 |
JP2006066864A (ja) * | 2004-07-30 | 2006-03-09 | Canon Inc | 光半導体装置およびその製造方法 |
JP2008523629A (ja) * | 2004-12-07 | 2008-07-03 | ピコメトリクス、エルエルシー | 光電導デバイス |
JP2006278366A (ja) * | 2005-03-28 | 2006-10-12 | Canon Inc | 電磁波発生・検出素子、およびその製造方法 |
JP2010521802A (ja) * | 2007-03-15 | 2010-06-24 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | 高速光導電体 |
JP2009206484A (ja) * | 2008-01-29 | 2009-09-10 | Canon Inc | パルスレーザおよびテラヘルツ計測装置 |
JP2010010450A (ja) * | 2008-06-27 | 2010-01-14 | Mitsubishi Electric Corp | 導波路型受光素子 |
JP2010056198A (ja) * | 2008-08-27 | 2010-03-11 | Canon Inc | 光伝導素子 |
JP2010169658A (ja) * | 2008-12-25 | 2010-08-05 | Canon Inc | 分析装置 |
JP2010283176A (ja) * | 2009-06-05 | 2010-12-16 | Canon Inc | 光伝導素子、それを用いたテラヘルツ波発生装置及び検出装置 |
JP2011135006A (ja) * | 2009-12-25 | 2011-07-07 | Canon Inc | 発振素子 |
JP2011198801A (ja) * | 2010-03-17 | 2011-10-06 | Canon Inc | 光伝導素子 |
JP2012146758A (ja) * | 2011-01-08 | 2012-08-02 | Canon Inc | テラヘルツ波素子 |
JP2014212301A (ja) * | 2013-04-03 | 2014-11-13 | パイオニア株式会社 | 光伝導基板、電磁波発生検出装置および光伝導基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112013004626T5 (de) | 2015-07-02 |
US9618823B2 (en) | 2017-04-11 |
JP6391576B2 (ja) | 2018-09-19 |
KR20140038869A (ko) | 2014-03-31 |
US20150277208A1 (en) | 2015-10-01 |
KR101700779B1 (ko) | 2017-01-31 |
WO2014046465A1 (ko) | 2014-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11231318B2 (en) | Photoconductive detector device with plasmonic electrodes | |
JP5178398B2 (ja) | 光伝導素子 | |
JP5270585B2 (ja) | 高速光導電体 | |
JP6332980B2 (ja) | 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 | |
Kostakis et al. | Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55$\mu {\hbox {m}} $ Pulse Excitation | |
JP6391576B2 (ja) | フォトミキサおよびその製造方法 | |
US9761750B2 (en) | Large caliber array type terahertz wave generating device having photonic crystal structure | |
Lavrukhin et al. | Strain-induced InGaAs-based photoconductive terahertz antenna detector | |
Sun et al. | Efficient terahertz generation within InGaN/GaN multiple quantum wells | |
Gorodetsky et al. | Photoelectric properties of InAs/GaAs quantum dot photoconductive antenna wafers | |
Tiedje et al. | Optical scanning techniques for characterization of terahertz photoconductive antenna arrays | |
Takahashi et al. | Terahertz radiation mechanism from femtosecond-laser-irradiated InAs (100) surface | |
Darmo et al. | Terahertz emitter with integrated semiconductor Bragg mirror | |
JP6705672B2 (ja) | 電磁波計測装置 | |
JP2013002995A (ja) | 光伝導基板およびこれを用いた電磁波発生検出装置 | |
Yao et al. | Hemispherical lens integrated room temperature ultra-broadband GaAs HEMT terahertz detector | |
Rafailov et al. | Highly efficient quantum dot-based photoconductive THz materials and devices | |
Ramaswamy et al. | 2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing | |
KR102230001B1 (ko) | 포토닉 크리스탈 구조의 대구경 어레이형 테라헤르츠 발생 장치 | |
Yardimci et al. | High-Power photoconductive terahertz source enabled by three-dimensional light confinement | |
Zhang et al. | Terahertz emission from photoconductive antenna fabricated on GaAs/Sapphire substrate | |
Yardimci et al. | High-Switching Contrast Plasmonic Nanocavities for Terahertz Detection with Extremely High Efficiency | |
Bello | Realisation of an efficient Terahertz source using Quantum dot devices | |
Rieh et al. | THz Optical Methods | |
KR101978983B1 (ko) | 광대역 테라헤르츠파 발생 및 검출용 대면적 어레이형 포토닉 크리스탈 포토믹서 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160727 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170606 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180123 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180807 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180821 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6391576 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |