JP2015513211A - 一時的な基板支持のための装置、複合積層体、方法、及び材料 - Google Patents

一時的な基板支持のための装置、複合積層体、方法、及び材料 Download PDF

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Publication number
JP2015513211A
JP2015513211A JP2014554808A JP2014554808A JP2015513211A JP 2015513211 A JP2015513211 A JP 2015513211A JP 2014554808 A JP2014554808 A JP 2014554808A JP 2014554808 A JP2014554808 A JP 2014554808A JP 2015513211 A JP2015513211 A JP 2015513211A
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Prior art keywords
layer
substrate
thermoplastic
bonding layer
coating
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Pending
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JP2014554808A
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English (en)
Japanese (ja)
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JP2015513211A5 (https=
Inventor
ブレイク アール． ドローネン，
ブレイク アール． ドローネン，
エリック ジー． ラーソン，
エリック ジー． ラーソン，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2015513211A publication Critical patent/JP2015513211A/ja
Publication of JP2015513211A5 publication Critical patent/JP2015513211A5/ja
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014554808A 2012-01-30 2013-01-24 一時的な基板支持のための装置、複合積層体、方法、及び材料 Pending JP2015513211A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261592148P 2012-01-30 2012-01-30
US61/592,148 2012-01-30
US201261616568P 2012-03-28 2012-03-28
US61/616,568 2012-03-28
PCT/US2013/022844 WO2013116071A1 (en) 2012-01-30 2013-01-24 Apparatus, hybrid laminated body, method, and materials for temporary substrate support

Publications (2)

Publication Number Publication Date
JP2015513211A true JP2015513211A (ja) 2015-04-30
JP2015513211A5 JP2015513211A5 (https=) 2016-03-03

Family

ID=48905714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014554808A Pending JP2015513211A (ja) 2012-01-30 2013-01-24 一時的な基板支持のための装置、複合積層体、方法、及び材料

Country Status (6)

Country Link
US (1) US20150017434A1 (https=)
EP (1) EP2810300A4 (https=)
JP (1) JP2015513211A (https=)
KR (1) KR20140128355A (https=)
TW (1) TW201338104A (https=)
WO (1) WO2013116071A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022213A (ja) * 2015-07-08 2017-01-26 凸版印刷株式会社 プリント配線基板
JP2017084910A (ja) * 2015-10-26 2017-05-18 東京応化工業株式会社 支持体分離方法
WO2018062467A1 (ja) * 2016-09-30 2018-04-05 ボンドテック株式会社 基板接合方法および基板接合装置
JP2021158303A (ja) * 2020-03-30 2021-10-07 株式会社ディスコ レーザー加工装置
WO2023243488A1 (ja) * 2022-06-13 2023-12-21 日東電工株式会社 電子部品仮固定用粘接着シート
KR20240016994A (ko) 2021-06-03 2024-02-06 도쿄엘렉트론가부시키가이샤 기판 처리 방법
JP2024507781A (ja) * 2021-02-15 2024-02-21 ブルーワー サイエンス アイ エヌ シー． 熱圧着における金属接合部の変形を防止するための仮接合及び剥離プロセス

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ITTO20120854A1 (it) * 2012-09-28 2014-03-29 Stmicroelectronics Malta Ltd Contenitore a montaggio superficiale perfezionato per un dispositivo integrato a semiconduttori, relativo assemblaggio e procedimento di fabbricazione
JP6193813B2 (ja) * 2014-06-10 2017-09-06 信越化学工業株式会社 ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法
JP6486735B2 (ja) * 2015-03-17 2019-03-20 東芝メモリ株式会社 半導体製造方法および半導体製造装置
US11830756B2 (en) * 2020-04-29 2023-11-28 Semiconductor Components Industries, Llc Temporary die support structures and related methods
JP6463664B2 (ja) * 2015-11-27 2019-02-06 信越化学工業株式会社 ウエハ加工体及びウエハ加工方法
JP6255500B1 (ja) * 2016-03-09 2017-12-27 技術研究組合次世代３Ｄ積層造形技術総合開発機構 ３次元積層造形システム、３次元積層造形方法、積層造形制御装置およびその制御方法と制御プログラム
WO2019106846A1 (ja) * 2017-12-01 2019-06-06 日立化成株式会社 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム
KR102680045B1 (ko) * 2019-12-09 2024-06-28 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름
KR102718468B1 (ko) 2020-07-10 2024-10-16 삼성전자주식회사 반도체 패키지 제조 방법
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications

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JPH0697017A (ja) * 1992-09-16 1994-04-08 Fujitsu Ltd 半導体装置の製造方法
JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
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JPH0697017A (ja) * 1992-09-16 1994-04-08 Fujitsu Ltd 半導体装置の製造方法
JP2004064040A (ja) * 2002-06-03 2004-02-26 Three M Innovative Properties Co 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置
US20050221598A1 (en) * 2004-03-31 2005-10-06 Daoqiang Lu Wafer support and release in wafer processing
JP2008060255A (ja) * 2006-08-30 2008-03-13 Teoss Corp 半導体ウエーハの加工方法
JP2010056409A (ja) * 2008-08-29 2010-03-11 Hitachi Chem Co Ltd 半導体ウェハ加工用接着フィルム
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022213A (ja) * 2015-07-08 2017-01-26 凸版印刷株式会社 プリント配線基板
JP2017084910A (ja) * 2015-10-26 2017-05-18 東京応化工業株式会社 支持体分離方法
TWI720004B (zh) * 2015-10-26 2021-03-01 日商東京應化工業股份有限公司 支撐體分離方法
WO2018062467A1 (ja) * 2016-09-30 2018-04-05 ボンドテック株式会社 基板接合方法および基板接合装置
JPWO2018062467A1 (ja) * 2016-09-30 2018-09-27 ボンドテック株式会社 基板接合方法および基板接合装置
TWI732048B (zh) * 2016-09-30 2021-07-01 日商邦德科技股份有限公司 基板接合方法及基板接合裝置
JP2021158303A (ja) * 2020-03-30 2021-10-07 株式会社ディスコ レーザー加工装置
JP7523932B2 (ja) 2020-03-30 2024-07-29 株式会社ディスコ レーザー加工装置
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JP2024507781A (ja) * 2021-02-15 2024-02-21 ブルーワー サイエンス アイ エヌ シー． 熱圧着における金属接合部の変形を防止するための仮接合及び剥離プロセス
KR20240016994A (ko) 2021-06-03 2024-02-06 도쿄엘렉트론가부시키가이샤 기판 처리 방법
WO2023243488A1 (ja) * 2022-06-13 2023-12-21 日東電工株式会社 電子部品仮固定用粘接着シート

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Publication number Publication date
EP2810300A1 (en) 2014-12-10
WO2013116071A1 (en) 2013-08-08
EP2810300A4 (en) 2016-05-11
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