TW201338104A - 用於暫時性基板支撐件之裝置、混層積體、方法及材料 - Google Patents
用於暫時性基板支撐件之裝置、混層積體、方法及材料 Download PDFInfo
- Publication number
- TW201338104A TW201338104A TW102103331A TW102103331A TW201338104A TW 201338104 A TW201338104 A TW 201338104A TW 102103331 A TW102103331 A TW 102103331A TW 102103331 A TW102103331 A TW 102103331A TW 201338104 A TW201338104 A TW 201338104A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- laminate
- wafer
- support
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
- B32B2037/243—Coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261592148P | 2012-01-30 | 2012-01-30 | |
| US201261616568P | 2012-03-28 | 2012-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201338104A true TW201338104A (zh) | 2013-09-16 |
Family
ID=48905714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102103331A TW201338104A (zh) | 2012-01-30 | 2013-01-29 | 用於暫時性基板支撐件之裝置、混層積體、方法及材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20150017434A1 (https=) |
| EP (1) | EP2810300A4 (https=) |
| JP (1) | JP2015513211A (https=) |
| KR (1) | KR20140128355A (https=) |
| TW (1) | TW201338104A (https=) |
| WO (1) | WO2013116071A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITTO20120854A1 (it) * | 2012-09-28 | 2014-03-29 | Stmicroelectronics Malta Ltd | Contenitore a montaggio superficiale perfezionato per un dispositivo integrato a semiconduttori, relativo assemblaggio e procedimento di fabbricazione |
| JP6193813B2 (ja) * | 2014-06-10 | 2017-09-06 | 信越化学工業株式会社 | ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法 |
| JP6486735B2 (ja) * | 2015-03-17 | 2019-03-20 | 東芝メモリ株式会社 | 半導体製造方法および半導体製造装置 |
| JP2017022213A (ja) * | 2015-07-08 | 2017-01-26 | 凸版印刷株式会社 | プリント配線基板 |
| US11830756B2 (en) * | 2020-04-29 | 2023-11-28 | Semiconductor Components Industries, Llc | Temporary die support structures and related methods |
| JP6564301B2 (ja) * | 2015-10-26 | 2019-08-21 | 東京応化工業株式会社 | 支持体分離方法 |
| JP6463664B2 (ja) * | 2015-11-27 | 2019-02-06 | 信越化学工業株式会社 | ウエハ加工体及びウエハ加工方法 |
| JP6255500B1 (ja) * | 2016-03-09 | 2017-12-27 | 技術研究組合次世代3D積層造形技術総合開発機構 | 3次元積層造形システム、3次元積層造形方法、積層造形制御装置およびその制御方法と制御プログラム |
| WO2018062467A1 (ja) * | 2016-09-30 | 2018-04-05 | ボンドテック株式会社 | 基板接合方法および基板接合装置 |
| WO2019106846A1 (ja) * | 2017-12-01 | 2019-06-06 | 日立化成株式会社 | 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム |
| KR102680045B1 (ko) * | 2019-12-09 | 2024-06-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접착 필름 |
| JP7523932B2 (ja) | 2020-03-30 | 2024-07-29 | 株式会社ディスコ | レーザー加工装置 |
| KR102718468B1 (ko) | 2020-07-10 | 2024-10-16 | 삼성전자주식회사 | 반도체 패키지 제조 방법 |
| US11996384B2 (en) | 2020-12-15 | 2024-05-28 | Pulseforge, Inc. | Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications |
| KR20230147115A (ko) * | 2021-02-15 | 2023-10-20 | 브레우어 사이언스, 인코포레이션 | 열압착 본딩에서 금속 연결의 변형을 방지하기 위한 임시 본딩 및 디본딩 공정 |
| KR20240016994A (ko) | 2021-06-03 | 2024-02-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 |
| US20260008939A1 (en) * | 2022-06-13 | 2026-01-08 | Nitto Denko Corporation | Adhesive sheet for provisional fixation of electronic component |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE754264A (fr) * | 1969-08-04 | 1971-02-01 | Uniroyal Inc | Resine de polyarylsulfone thermoplastique |
| US4231910A (en) * | 1979-02-08 | 1980-11-04 | Dow Corning Corporation | Primer composition |
| US5061549A (en) * | 1990-03-20 | 1991-10-29 | Shores A Andrew | Substrate attach adhesive film, application method and devices incorporating the same |
| US5372883A (en) * | 1990-03-20 | 1994-12-13 | Staystik, Inc. | Die attach adhesive film, application method and devices incorporating the same |
| EP0571649A1 (en) * | 1992-05-26 | 1993-12-01 | Nitto Denko Corporation | Dicing-die bonding film and use thereof in a process for producing chips |
| US5476566A (en) * | 1992-09-02 | 1995-12-19 | Motorola, Inc. | Method for thinning a semiconductor wafer |
| JPH0697017A (ja) * | 1992-09-16 | 1994-04-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH1126733A (ja) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
| JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
| US6828217B2 (en) * | 2002-10-31 | 2004-12-07 | Northrop Grumman Corporation | Dicing process for GAAS/INP and other semiconductor materials |
| CN1823425A (zh) * | 2003-07-10 | 2006-08-23 | 松下电器产业株式会社 | 有机薄膜晶体管及其制造方法、以及使用了它的有源矩阵型显示器和无线识别标签 |
| JP4405246B2 (ja) * | 2003-11-27 | 2010-01-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体チップの製造方法 |
| JP2006049800A (ja) * | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
| JP4443962B2 (ja) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
| US7226812B2 (en) * | 2004-03-31 | 2007-06-05 | Intel Corporation | Wafer support and release in wafer processing |
| US7232740B1 (en) * | 2005-05-16 | 2007-06-19 | The United States Of America As Represented By The National Security Agency | Method for bumping a thin wafer |
| US20080014532A1 (en) * | 2006-07-14 | 2008-01-17 | 3M Innovative Properties Company | Laminate body, and method for manufacturing thin substrate using the laminate body |
| JP4847255B2 (ja) * | 2006-08-30 | 2011-12-28 | 株式会社テオス | 半導体ウエーハの加工方法 |
| US7838391B2 (en) * | 2007-05-07 | 2010-11-23 | Stats Chippac, Ltd. | Ultra thin bumped wafer with under-film |
| US20090017248A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
| US20090017323A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
| JP5224111B2 (ja) * | 2008-08-29 | 2013-07-03 | 日立化成株式会社 | 半導体ウェハ加工用接着フィルム |
| JP5476046B2 (ja) * | 2008-10-03 | 2014-04-23 | 東京応化工業株式会社 | 剥離方法、基板の接着剤、および基板を含む積層体 |
| US8267143B2 (en) * | 2009-04-16 | 2012-09-18 | Suss Microtec Lithography, Gmbh | Apparatus for mechanically debonding temporary bonded semiconductor wafers |
| US8399346B2 (en) * | 2009-09-16 | 2013-03-19 | Brewer Science Inc. | Scratch-resistant coatings for protecting front-side circuitry during backside processing |
| JP5257314B2 (ja) * | 2009-09-29 | 2013-08-07 | 大日本印刷株式会社 | 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法 |
| US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| US20150034238A1 (en) * | 2012-03-20 | 2015-02-05 | 3M Innovative Properties Company | Laminate body, method, and materials for temporary substrate support and support separation |
-
2013
- 2013-01-24 US US14/373,953 patent/US20150017434A1/en not_active Abandoned
- 2013-01-24 EP EP13743946.9A patent/EP2810300A4/en not_active Withdrawn
- 2013-01-24 JP JP2014554808A patent/JP2015513211A/ja active Pending
- 2013-01-24 WO PCT/US2013/022844 patent/WO2013116071A1/en not_active Ceased
- 2013-01-24 KR KR20147023802A patent/KR20140128355A/ko not_active Ceased
- 2013-01-29 TW TW102103331A patent/TW201338104A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2810300A1 (en) | 2014-12-10 |
| WO2013116071A1 (en) | 2013-08-08 |
| EP2810300A4 (en) | 2016-05-11 |
| JP2015513211A (ja) | 2015-04-30 |
| KR20140128355A (ko) | 2014-11-05 |
| US20150017434A1 (en) | 2015-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201338104A (zh) | 用於暫時性基板支撐件之裝置、混層積體、方法及材料 | |
| JP4565804B2 (ja) | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 | |
| US9184083B2 (en) | Apparatus, hybrid laminated body, method and materials for temporary substrate support | |
| JP5048707B2 (ja) | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 | |
| JP4405246B2 (ja) | 半導体チップの製造方法 | |
| US7988807B2 (en) | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body | |
| KR101250149B1 (ko) | 피절단체로부터의 다이싱 표면 보호 테이프의 박리 제거 방법 | |
| US20090017248A1 (en) | Layered body and method for manufacturing thin substrate using the layered body | |
| US20090017323A1 (en) | Layered body and method for manufacturing thin substrate using the layered body | |
| CN116157486A (zh) | 背面研磨用粘着性膜及电子装置的制造方法 | |
| CN116157481A (zh) | 电子装置的制造方法 |