JP2015511112A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2015511112A5 JP2015511112A5 JP2015500661A JP2015500661A JP2015511112A5 JP 2015511112 A5 JP2015511112 A5 JP 2015511112A5 JP 2015500661 A JP2015500661 A JP 2015500661A JP 2015500661 A JP2015500661 A JP 2015500661A JP 2015511112 A5 JP2015511112 A5 JP 2015511112A5
- Authority
- JP
- Japan
- Prior art keywords
- coupled
- gan fet
- fet
- source
- comparator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 claims 41
- 239000003990 capacitor Substances 0.000 claims 17
- 238000002955 isolation Methods 0.000 claims 13
- 230000005669 field effect Effects 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/422,132 | 2012-03-16 | ||
US13/422,132 US8593211B2 (en) | 2012-03-16 | 2012-03-16 | System and apparatus for driver circuit for protection of gates of GaN FETs |
PCT/US2013/032258 WO2013138750A1 (en) | 2012-03-16 | 2013-03-15 | SYSTEM AND APPARATUS FOR DRIVER CIRCUIT FOR PROTECTION OF GATES OF GaN FETS |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015511112A JP2015511112A (ja) | 2015-04-13 |
JP2015511112A5 true JP2015511112A5 (ko) | 2016-05-12 |
JP6209205B2 JP6209205B2 (ja) | 2017-10-04 |
Family
ID=49157055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015500661A Active JP6209205B2 (ja) | 2012-03-16 | 2013-03-15 | GaNFETのゲートの保護のためのドライバ回路のためのシステム及び装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8593211B2 (ko) |
JP (1) | JP6209205B2 (ko) |
CN (1) | CN104170254B (ko) |
WO (1) | WO2013138750A1 (ko) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130321374A1 (en) * | 2012-05-31 | 2013-12-05 | Qualcomm Mems Technologies, Inc. | Voltage converter |
US9660639B2 (en) | 2012-12-21 | 2017-05-23 | Gan Systems Inc. | Distributed driver circuitry integrated with GaN power transistors |
US9312755B2 (en) * | 2013-03-05 | 2016-04-12 | Qualcomm Incorporated | Charge pump power savings |
US9035318B2 (en) * | 2013-05-03 | 2015-05-19 | Texas Instruments Incorporated | Avalanche energy handling capable III-nitride transistors |
TWI509964B (zh) * | 2013-07-19 | 2015-11-21 | Upi Semiconductor Corp | 電源轉換器的驅動器及其驅動控制方法 |
US9559613B2 (en) * | 2013-09-18 | 2017-01-31 | Infineon Technologies Ag | System and method for a switch driver |
US8947154B1 (en) * | 2013-10-03 | 2015-02-03 | Avogy, Inc. | Method and system for operating gallium nitride electronics |
US9476933B2 (en) | 2013-12-09 | 2016-10-25 | Texas Instruments Incorporated | Apparatus and methods for qualifying HEMT FET devices |
US9379695B2 (en) * | 2013-12-30 | 2016-06-28 | Infineon Technologies Ag | Circuit and method for operating a half-bridge |
WO2015135072A1 (en) | 2014-03-12 | 2015-09-17 | Gan Systems Inc. | Power switching systems comprising high power e-mode gan transistors and driver circuitry |
US9571093B2 (en) | 2014-09-16 | 2017-02-14 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
US9537338B2 (en) * | 2014-09-16 | 2017-01-03 | Navitas Semiconductor Inc. | Level shift and inverter circuits for GaN devices |
US9667245B2 (en) * | 2014-10-10 | 2017-05-30 | Efficient Power Conversion Corporation | High voltage zero QRR bootstrap supply |
US9641077B2 (en) * | 2015-01-29 | 2017-05-02 | Qualcomm Incorporated | Applying force voltage to switching node of disabled buck converter power stage |
TWI566509B (zh) * | 2015-08-20 | 2017-01-11 | 世界先進積體電路股份有限公司 | 切換式轉換器以及升壓裝置 |
EP3298629A4 (en) * | 2015-10-09 | 2019-01-09 | HRL Laboratories, LLC | GAN MONOLITHIC INTEGRATED AREA CONVERTER ON SAPPHIRE |
US10122274B2 (en) | 2015-12-11 | 2018-11-06 | Freebird Semiconductor Corporation | Multi-function power control circuit using enhancement mode gallium nitride (GaN) high electron mobility transistors (HEMTs) |
US10218348B2 (en) | 2016-01-22 | 2019-02-26 | Mitsubishi Electric Corporation | Control circuit |
US9831867B1 (en) | 2016-02-22 | 2017-11-28 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
CN105591638B (zh) * | 2016-03-16 | 2018-04-10 | 阳光电源股份有限公司 | 一种开关管驱动电路 |
US10270239B2 (en) | 2016-06-15 | 2019-04-23 | Texas Instruments Incorporated | Overvoltage protection and short-circuit withstanding for gallium nitride devices |
JP6839280B2 (ja) * | 2016-12-01 | 2021-03-03 | エフィシエント パワー コンヴァーション コーポレーション | GaNトランジスタに基づく電力コンバータのためのブートストラップキャパシタ過電圧管理回路 |
US10374591B2 (en) * | 2017-01-03 | 2019-08-06 | General Electric Company | Systems and methods for a gate drive circuit |
US10965281B2 (en) * | 2017-09-25 | 2021-03-30 | Dialog Semiconductor (Uk) Limited | Circuit based on a III/V semiconductor and a method of operating the same |
US10298112B2 (en) * | 2017-09-29 | 2019-05-21 | Dialog Semiconductor, Inc. | Circuit for driving a power switch |
US10193554B1 (en) * | 2017-11-15 | 2019-01-29 | Navitas Semiconductor, Inc. | Capacitively coupled level shifter |
US10992295B2 (en) * | 2018-01-25 | 2021-04-27 | Renesas Electronics Corporation | Controlling a high-side switching element using a bootstrap capacitor |
CN112005498B (zh) * | 2018-04-02 | 2024-04-09 | 罗姆股份有限公司 | 开关驱动装置 |
CN108494234B (zh) * | 2018-04-09 | 2020-05-01 | 电子科技大学 | 适用于GaN高速栅驱动电路的浮动电源轨 |
US10903738B2 (en) * | 2018-05-14 | 2021-01-26 | Analog Devices International Unlimited Company | High conversion-ratio hybrid switched power converter |
CN108964647A (zh) * | 2018-06-20 | 2018-12-07 | 广东美的制冷设备有限公司 | 场效应晶体管的驱动电路、驱动系统及空调器 |
US10742121B2 (en) * | 2018-06-29 | 2020-08-11 | Dialog Semiconductor Inc. | Boot strap capacitor charging for switching power converters |
CN109039029B (zh) * | 2018-08-15 | 2020-02-04 | 电子科技大学 | 一种适用于GaN功率器件栅驱动电路的自举充电电路 |
TWI715167B (zh) * | 2018-08-28 | 2021-01-01 | 美商高效電源轉換公司 | 基於GaN的高電流驅動器之故障安全停機技術 |
TWI732280B (zh) * | 2018-08-28 | 2021-07-01 | 美商高效電源轉換公司 | 串級自舉式GaN功率開關及驅動器 |
US10840798B1 (en) | 2018-09-28 | 2020-11-17 | Dialog Semiconductor (Uk) Limited | Bidirectional signaling method for high-voltage floating circuits |
TWI672574B (zh) * | 2018-10-26 | 2019-09-21 | 瑞昱半導體股份有限公司 | 穩壓裝置及其控制方法 |
US10574229B1 (en) | 2019-01-23 | 2020-02-25 | Tagore Technology, Inc. | System and device for high-side supply |
DE212020000049U1 (de) * | 2019-02-07 | 2020-05-25 | Rohm Co., Ltd. | Schaltansteuerbauteil |
CN109951183B (zh) * | 2019-03-07 | 2020-12-25 | 华为技术有限公司 | 一种芯片、信号位移电路及电子设备 |
US10554112B1 (en) | 2019-04-04 | 2020-02-04 | Navitas Semiconductor, Inc. | GaN driver circuit |
US10601302B1 (en) * | 2019-04-04 | 2020-03-24 | Navitas Semiconductor, Inc. | Bootstrap power supply circuit |
WO2020223061A1 (en) * | 2019-04-29 | 2020-11-05 | Efficient Power Conversion Corporation | GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE |
DE102019206751B4 (de) * | 2019-05-09 | 2021-03-25 | Schmidhauser Ag | Frequenzumrichter |
CN114731111A (zh) * | 2019-11-21 | 2022-07-08 | 三菱电机株式会社 | Dc/dc转换器 |
JP7308137B2 (ja) * | 2019-12-03 | 2023-07-13 | ローム株式会社 | スイッチング回路のゲート駆動回路および制御回路、スイッチング電源 |
CN111049100B (zh) * | 2019-12-10 | 2021-09-03 | 中国电子科技集团公司第五十八研究所 | 一种具有钳位功能的自举电路 |
US11489441B2 (en) * | 2020-06-02 | 2022-11-01 | Texas Instruments Incorporated | Reference voltage generation circuits and related methods |
CN113890526A (zh) | 2020-07-02 | 2022-01-04 | 意法半导体股份有限公司 | 驱动器电路、对应的设备及操作方法 |
IT202000016072A1 (it) | 2020-07-02 | 2022-01-02 | St Microelectronics Srl | Circuito di pilotaggio, dispositivo e procedimento di funzionamento corrispondenti |
JP7388317B2 (ja) | 2020-08-27 | 2023-11-29 | 三菱電機株式会社 | 駆動回路およびインバータ装置 |
US11680978B2 (en) * | 2020-09-30 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation |
US11652411B2 (en) * | 2021-02-26 | 2023-05-16 | Nxp Usa, Inc. | System and method of maintaining charge on boot capacitor of a power converter |
CN113225054B (zh) * | 2021-03-24 | 2023-03-14 | 芜湖威尔芯半导体有限公司 | 一种全集成Full-NMOS功率管高侧驱动电路 |
US11888391B2 (en) * | 2021-09-29 | 2024-01-30 | Texas Instruments Incorporated | Gate driver circuit with charge pump current control |
CN114614802B (zh) * | 2022-03-03 | 2023-06-20 | 电子科技大学 | 一种具有快速开启功能的GaN驱动器 |
WO2023218988A1 (ja) * | 2022-05-11 | 2023-11-16 | ローム株式会社 | ブートストラップ回路、電源装置、及び車両 |
GB2619112A (en) * | 2022-12-12 | 2023-11-29 | Cambridge Gan Devices Ltd | III-Nitride power semiconductor based heterojunction device comprising a bootstrap device |
CN117318689B (zh) * | 2023-11-28 | 2024-03-22 | 成都市硅海武林科技有限公司 | 一种全桥和半桥电路高侧功率管的自举驱动电路 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE33378E (en) * | 1983-10-14 | 1990-10-09 | Sundstrand Corporation | Incremental base drive circuit for a power transistor |
IT1228509B (it) * | 1988-10-28 | 1991-06-19 | Sgs Thomson Microelectronics | Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo |
JP2531818B2 (ja) * | 1990-02-21 | 1996-09-04 | 株式会社東芝 | 半導体集積回路 |
WO1996032778A2 (en) * | 1995-04-10 | 1996-10-17 | Philips Electronics N.V. | Level-shifting circuit and high-side driver including such a level-shifting circuit |
JP2003228320A (ja) * | 2002-02-05 | 2003-08-15 | Matsushita Electric Ind Co Ltd | プラズマディスプレイ装置 |
DE10334334B3 (de) * | 2003-07-28 | 2004-10-14 | Texas Instruments Deutschland Gmbh | CMOS-Analogschalter |
US7026801B2 (en) * | 2003-09-15 | 2006-04-11 | Texas Instruments Incorporated | Guaranteed bootstrap hold-up circuit for buck high side switch |
US20060044051A1 (en) * | 2004-08-24 | 2006-03-02 | International Rectifier Corporation | Bootstrap diode emulator with dynamic back-gate biasing and short-circuit protection |
US7126388B2 (en) * | 2004-12-16 | 2006-10-24 | Semiconductor Components Industries, L.L.C. | Power MOSFET driver and method therefor |
TW200835125A (en) * | 2007-02-08 | 2008-08-16 | Richtek Techohnology Corp | Circuit for charging the boot-strap capacitor of voltage converter |
US7592831B2 (en) * | 2007-04-05 | 2009-09-22 | International Rectifier Corporation | Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator |
US7518352B2 (en) * | 2007-05-11 | 2009-04-14 | Freescale Semiconductor, Inc. | Bootstrap clamping circuit for DC/DC regulators and method thereof |
US8488348B2 (en) * | 2007-06-20 | 2013-07-16 | Samsung Electronics Co., Ltd. | Switch mode power supply apparatus having active clamping circuit |
JP5112846B2 (ja) * | 2007-12-27 | 2013-01-09 | セイコーインスツル株式会社 | 電源切替回路 |
US8063616B2 (en) * | 2008-01-11 | 2011-11-22 | International Rectifier Corporation | Integrated III-nitride power converter circuit |
US7848125B2 (en) * | 2008-10-21 | 2010-12-07 | Texas Instruments Incorporated | Keep-alive for power stage with multiple switch nodes |
JP5301969B2 (ja) * | 2008-12-04 | 2013-09-25 | シャープ株式会社 | スイッチング電源回路及びそれを用いた電子機器 |
US8054110B2 (en) * | 2009-01-20 | 2011-11-08 | University Of South Carolina | Driver circuit for gallium nitride (GaN) heterojunction field effect transistors (HFETs) |
TWI376869B (en) * | 2009-04-13 | 2012-11-11 | Anpec Electronics Corp | Direct current converter |
KR101578782B1 (ko) * | 2009-04-23 | 2015-12-21 | 페어차일드코리아반도체 주식회사 | 전력 반도체 소자 |
-
2012
- 2012-03-16 US US13/422,132 patent/US8593211B2/en active Active
-
2013
- 2013-03-15 CN CN201380013542.6A patent/CN104170254B/zh active Active
- 2013-03-15 WO PCT/US2013/032258 patent/WO2013138750A1/en active Application Filing
- 2013-03-15 JP JP2015500661A patent/JP6209205B2/ja active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2015511112A5 (ko) | ||
US10014853B1 (en) | Driving circuit of a power circuit | |
US9800245B2 (en) | Bipolar gate driver | |
US9793260B2 (en) | System and method for a switch having a normally-on transistor and a normally-off transistor | |
US9467061B2 (en) | System and method for driving a transistor | |
US9461547B2 (en) | Converter circuitry | |
JP2017537584A5 (ko) | ||
US20130200926A1 (en) | Driver circuit | |
JP6417546B2 (ja) | ゲート駆動回路およびそれを用いた電力変換装置 | |
US20130106468A1 (en) | Gate driver | |
JP2012170244A (ja) | 半導体スイッチング素子の駆動回路 | |
JP2018129891A5 (ko) | ||
US9948289B2 (en) | System and method for a gate driver | |
EP2477222A3 (en) | Stacked half-bridge package with a current carrying layer | |
JP2014204604A5 (ko) | ||
GB2559423A8 (en) | An isolated high side driver | |
JP2014142350A5 (ko) | ||
JP6458552B2 (ja) | スイッチング方式の降圧型dc−dcコンバータ、及び電力変換回路 | |
US9059697B2 (en) | Drive circuit and drive method for driving normally-on-type transistor | |
US20170367154A1 (en) | Led driver and led driving method | |
CN103812484B (zh) | 一种装有控制ic的低噪声fet驱动电路 | |
TW201238228A (en) | Smart driver for flyback converts | |
WO2012030867A3 (en) | High-efficiency base-driver circuit for power bipolar junction transistors | |
US9951883B2 (en) | Apparatus and method of measuring coil current of hydraulic valve | |
EP2980993A1 (en) | Operating device for a light source and method of controlling an operating device |