JP2015507321A - 電子衝撃電荷結合素子(ebccd)、およびebccd検出器を用いた検出システム - Google Patents
電子衝撃電荷結合素子(ebccd)、およびebccd検出器を用いた検出システム Download PDFInfo
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- H01L27/144—Devices controlled by radiation
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Abstract
Description
本願は、2011年12月12日に出願された米国特許仮出願第61/569,611号(名称「Electron−Bombarded CCD And Inspection Systems Using Electron−Bombarded CCD Detectors」)に対する優先権を主張するものであり、この米国特許仮出願は、参照により本明細書に組み込まれる。
本開示は、きわめて低レベルの光を、高い空間分解能、高い量子効率、非常に良好な信号対雑音比、および高いダイナミックレンジで検出することのできる感光性アレイ検出器に関する。
集束EBCCDにより、量子効率を維持または改良すると同時に、空間分解能、寿命、および信号対雑音比が改善された。図2は、集束EBCCD201の図である。EBCCD201は密封管205を含み、この密封管は、真空環境において感光性光電陰極204とCCD202を格納する。密封管205の上面はウィンドウ207を含む。ウィンドウ207は、対象の波長において透明である。UV感応性EBCCD検出器の場合、このウィンドウは、好ましくは、極めて純度の高いグレードの石英、溶融シリカ、またはアルミナ(サファイア)を含む。いくつかの好適な実施形態では、ウィンドウの外面はUV反射防止コーティングで被覆される。このコーティングは、低指数物質(例えばフッ化マグネシウム(MgF2))で作られた単層でもよく、あるいは多層コーティングでもよい。
Claims (26)
- ウィンドウを含むアセンブリと;
前記アセンブリの内側にあり、かつ前記ウィンドウに隣接する光電陰極と;
前記アセンブリの内側にあり、かつ前記光電陰極から発せられた電子を収集するように位置付けられた電荷結合素子(CCD)デバイスと;
前記光電陰極と前記CCDの間に位置付けられ、内部に複数の穴を有する制御デバイスと;
を含む、電子衝撃電荷結合素子(EBCCD)であって、
前記複数の穴は、前記光電陰極の表面に対して垂直に形成され、前記複数の穴のパターンは前記CCDにおけるピクセルのパターンと整列され、各穴は、前記制御デバイスの前記光電陰極に面する表面に形成された少なくとも1つの第1電極に囲まれる、
電子衝撃電荷結合素子(EBCCD)。 - 前記CCDは、前記少なくとも1つの第1電極に面する表面にホウ素コーティングを有する、請求項1に記載のEBCCD。
- 前記CCDは背面薄化CCDを含む、請求項1に記載のEBCCD。
- 前記CCDは時間遅延積分CCDを含む、請求項1に記載のEBCCD。
- 前記ウィンドウの外面は反射防止コーティングを含む、請求項1に記載のEBCCD。
- 前記制御デバイスはシリコン構造物を含む、請求項1に記載のEBCCD。
- 前記制御デバイスは金属製構造物を含む、請求項1に記載のEBCCD。
- 前記制御デバイスは、前記複数の穴の間に複数の畝をさらに含む、請求項1に記載のEBCCD。
- 前記制御デバイスは、CCDピクセルの短い方の寸法の約半分以下だけ前記光電陰極から分離するように位置付けられる、請求項1に記載のEBCCD。
- 前記少なくとも1つの第1電極は複数の第1電極を含み、前記第1電極の各々は、所与の穴を囲み、かつ前記所与の穴からギャップにより分離される、請求項1に記載のEBCCD。
- 前記少なくとも1つの第1電極は、複数の環状電極と、1つの表面電極と、を含み、前記複数の環状電極の各々は、所与の穴から第1ギャップにより分離され、かつ前記表面電極から第2ギャップにより分離される、請求項1に記載のEBCCD。
- 前記制御デバイスの前記穴を囲み、かつ前記制御デバイスの前記CCDに面する表面に位置付けられた少なくとも1つの第2電極をさらに含む、請求項10に記載のEBCCD。
- 電子衝撃電荷結合素子(EBCCD)を操作する方法であって、
前記EBCCDの光電陰極を前記EBCCDのCCDに対して負の電圧に保つことと;
前記光電陰極から前記CCDのピクセルに向かって進行する電子を集束させることと;
を含む、方法。 - 制御デバイスの穴を前記CCDの前記ピクセルと整列させることをさらに含み、前記制御デバイスは前記集束を提供する、請求項13に記載の方法。
- 前記制御デバイスの前記穴の内面を、前記光電陰極に対して正の電圧に保つことをさらに含む、請求項14に記載の方法。
- 少なくとも1つの穴を囲む第1電極を、前記穴の前記内面とは異なる電圧に保つことをさらに含み、前記第1電極は、前記制御デバイスの前記光電陰極に面する表面に位置付けられる、請求項15に記載の方法。
- 前記第1電極は、前記穴の前記内面に対して負の電圧に保たれる、請求項16に記載の方法。
- 第2電極を前記第1電極とは異なる電位に保つことをさらに含み、前記第2電極は、前記制御デバイスの少なくとも1つの穴を囲み、かつ前記CCDに面するように位置付けられる、請求項17に記載の方法。
- 前記光電陰極に最も近い前記制御デバイス表面のいくつかの領域を、前記光電陰極の電位と同様の電位、または前記光電陰極に対してわずかに負の電位に保つことをさらに含む、請求項15に記載の方法。
- 光を検査対象サンプルに方向付けるための光学系と;
前記サンプルからの散乱光を収集し、収集した光を方向付けるための光学系と;
前記収集した光を受け取るための電子衝撃電荷結合素子(EBCCD)検出器と;
を含む、暗視野検査システムであって、
前記EBCCD検出器は、
ウィンドウを含むアセンブリと;
前記アセンブリの内側にあり、かつ前記ウィンドウに隣接する光電陰極と;
前記アセンブリの内側にあり、かつ前記光電陰極から発せられた電子を収集するように位置付けられたCCDデバイスと;
前記光電陰極と前記CCDの間に位置付けられ、内部に複数の穴を有する制御デバイスと;を含み、
前記複数の穴は、前記光電陰極の表面に対して垂直に形成され、前記複数の穴のパターンは前記CCDにおけるピクセルのパターンと整列され、各穴は、前記制御デバイスの前記光電陰極に面する表面に形成された少なくとも1つの第1電極に囲まれる、
暗視野検査システム。 - 前記CCDは時間遅延積分CCDである、請求項20に記載の暗視野検査システム。
- 前記時間遅延積分CCDは、並行して読み取ることのできる多重読み出しレジスタを含む、請求項21に記載の暗視野検査システム。
- 半導体ウエハの検査方法であって、
前記ウエハの領域に光を当てることと;
前記ウエハからの散乱光を収集することと;
収集した光を電子衝撃電荷結合素子(EBCCD)検出器へと方向付けることと;
を含み、前記EBCCD検出器は、
前記EBCCDの光電陰極を前記EBCCDのCCDに対して負の電圧に保つことと;
前記光電陰極から前記CCDのピクセルに向かって進行する電子を集束させることと;
を含む処理を行う、検査方法。 - 前記CCDは時間遅延積分を行う、請求項23に記載の検査方法。
- 前記時間遅延積分は、並行して読み出される多重レジスタを使用する、請求項24に記載の検査方法。
- 検査システムであって、
前記検査システムは、パルス照明光源と;
電子衝撃電荷結合素子(EBCCD)検出器を含むイメージセンサと、を含み;
前記EBCCD検出器は、
ウィンドウを含むアセンブリと;
前記アセンブリの内側にあり、かつ前記ウィンドウに隣接する光電陰極と;
前記アセンブリの内側にあり、かつ前記光電陰極から発せられた電子を収集するように位置付けられたCCDと;
前記光電陰極と前記CCDの間に位置付けられ、内部に複数の穴を有する制御デバイスと;を含み、
前記複数の穴は、前記光電陰極の表面に対して垂直に形成され、前記複数の穴のパターンは前記CCDにおけるピクセルのパターンと整列され、各穴は、前記制御デバイスの前記光電陰極に面する表面に形成された少なくとも1つの第1電極に囲まれており;
前記検査システムは、
前記パルス照明光源からのパルス照明を連続移動物体へと方向付けるように、かつ前記物体からの反射光を前記イメージセンサへと方向付けるように構成された光学構成要素と;
前記イメージセンサを操作するように構成されたプロセッサと;を含み、
処理を行う構成は、
照明パルス中に時間遅延積分(TDI)操作を行うことと(ここで、TDI操作中、前記イメージセンサのピクセルにより保存された電荷は第1方向にのみ移動する);
非照明中に分割読み出し操作を行うことと(ここで、前記分割読み出し中、前記イメージセンサの第1ピクセルにより保存された第1電荷は前記第1方向に移動し、前記イメージセンサの第2ピクセルにより保存された第2電荷は第2方向に同時に移動し、前記第2方向は前記第1方向と反対方向にある)、を含む、
検査システム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201161569611P | 2011-12-12 | 2011-12-12 | |
US61/569,611 | 2011-12-12 | ||
US13/710,315 | 2012-12-10 | ||
US13/710,315 US10197501B2 (en) | 2011-12-12 | 2012-12-10 | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
PCT/US2012/068944 WO2013090261A1 (en) | 2011-12-12 | 2012-12-11 | Electron-bombarded charge-coupled device and inspection systems using ebccd detectors |
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JP2015507321A5 JP2015507321A5 (ja) | 2016-02-04 |
JP6328055B2 JP6328055B2 (ja) | 2018-05-23 |
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KR (1) | KR101980930B1 (ja) |
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EP2791961A4 (en) | 2015-07-15 |
KR101980930B1 (ko) | 2019-05-21 |
EP2791961A1 (en) | 2014-10-22 |
EP2791961B1 (en) | 2019-06-05 |
TWI581296B (zh) | 2017-05-01 |
US10197501B2 (en) | 2019-02-05 |
JP6328055B2 (ja) | 2018-05-23 |
WO2013090261A1 (en) | 2013-06-20 |
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US20130148112A1 (en) | 2013-06-13 |
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