JP2007533107A - 増強されたハイブリッド固体センサ - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2957—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using channel multiplier arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/50057—Imaging and conversion tubes characterised by form of output stage
- H01J2231/50068—Electrical
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/501—Imaging and conversion tubes including multiplication stage
- H01J2231/5013—Imaging and conversion tubes including multiplication stage with secondary emission electrodes
- H01J2231/5016—Michrochannel plates [MCP]
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
Description
本出願は、発明者Rudolph G.Benz,Nils I.Thomas,およびArlynn W.Smithの利益のために2001年10月9日に出願され、INTENSIFIED HYBRID SOLID−STATE SENSOR WITH AN INSULATING LAYER題された係属中の米国特許第09/973,907号の一部係属出願である。上記出願は、本発明の譲受人に譲渡されており、参照のため、本明細書に援用される。
本発明は、増強されたハイブリッド固体センサを対象としている。特に、本発明は、マイクロチャネルプレート(MCP;microchannel plate)と光電陰極とに物理的に近接して接続されたCMOSまたはCCD検出デバイスを用いた画像増強器に関する。
本発明の例示的な実施形態にしたがうと、増強された固体画像化センサは、画像からの光を電子に変換する光電陰極を含む。増強された固体画像化センサはまた、光電陰極からの電子を受け取る電子倍増化デバイスをも含む。電子倍増化デバイスは、電子倍増化デバイスが光電陰極から受け取るよりも多数の電子を出力する。増強された固体画像化センサはまた、電子倍増化デバイスの複数のチャネルを介することにより、電子倍増化デバイスからの電子を受け取る、複数の画像を含む固体画像センサをも含む。固体画像センサは、電子倍増化デバイスから受け取った電子から増強された画像信号を生成する。複数のチャネルは、複数のチャネルパターンで配置されており、複数の画素は、複数の画素パターンで配置されている。複数のチャネルパターンの各々は、複数のチャネルパターンの各々からの電子信号が、複数の画素パターンのうちのそれぞれの単一の画素パターンによって実質的に受け取られるように、複数の画素パターンのうちのそれぞれの1つにマッピングされている。
本発明の実施形態の好ましい特徴は、図面を参照して以下で記述される。本発明の精神および範囲は、説明のために選択された実施形態に制限されないことが理解され得る。さらに、図面は特定の倍率または比率にはされていない。以下で記述される任意の構成および材料は、本発明の範囲内で改変され得ることを意図されている。
Claims (10)
- 増強された固体画像化センサであって、
画像からの光を電子に変換する光電陰極と、
該光電陰極からの電子を受け取る電子倍増化デバイスであって、該電子倍増化デバイスは、該電子倍増化デバイスが該光電陰極から受け取るよりも多数の電子を出力する、電子倍増化デバイスと、
該電子倍増化デバイスの複数のチャネルを介することにより、該電子倍増化デバイスからの電子を受け取る、複数の画素を含む固体画像センサであって、該固体画像センサは、該電子倍増化デバイスから受け取った電子から、増強された画像信号を生成する、固体画像センサと
を備え、該複数のチャネルは、複数のチャネルパターンで配置されており、該複数の画素は、複数の画素パターンで配置されており、該複数のチャネルパターンの各々は、該複数のチャネルパターンの各々からの電子信号が、該複数の画素パターンのうちのそれぞれの単一の画素パターンによって実質的に受け取られるように、該複数の画素パターンのうちのそれぞれの1つにマッピングされている、固体画像化センサ。 - 前記複数のチャネルパターンの各々は、単一のチャネルを備え、前記複数の画素パターンの各々は、単一の画素を備える、請求項1に記載の増強された固体画像化センサ。
- 前記複数のチャネルパターンの各々は、前記複数の画素パターンのそれぞれの1つと実質的に同じサイズと形状である、請求項2に記載の増強された固体画像化センサ。
- 前記複数のチャネルパターンの各々は、複数のチャネルを備え、前記複数の画素パターンの各々は、単一の画素を備える、請求項1に記載の増強された固体画像化センサ。
- 前記複数のチャネルパターンの各々は、単一のチャネルを備え、前記複数の画素パターンの各々は、複数の画素を備える、請求項1に記載の増強された固体画像化センサ。
- 前記複数のチャネルパターンの各々は、複数のチャネルを備え、前記複数の画素パターンの各々は、複数の画素を備える、請求項1に記載の増強された固体画像化センサ。
- 前記複数のチャネルパターンの各々は、前記複数の画素パターンのうちのそれぞれの1つと回転的に並べられているか、または並進的に並べられている、請求項1に記載の増強された固体画像化センサ。
- 前記電子倍増化デバイスは、マルチチャネルのプレートを備え、前記複数のチャネルは、該マルチチャネルのプレートの複数の細孔を備える、請求項1に記載の増強された固体画像化センサ。
- 前記固体画像センサは、CCDデバイスである、請求項1に記載の増強された固体画像化センサ。
- 前記固体画像センサは、CMOSデバイスである、請求項1に記載の増強された固体画像化センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/824,084 | 2004-04-14 | ||
US10/824,084 US7015452B2 (en) | 2001-10-09 | 2004-04-14 | Intensified hybrid solid-state sensor |
PCT/US2005/012438 WO2005106916A1 (en) | 2004-04-14 | 2005-04-11 | Intensified hybrid solid-state sensor |
Publications (2)
Publication Number | Publication Date |
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JP2007533107A true JP2007533107A (ja) | 2007-11-15 |
JP5197002B2 JP5197002B2 (ja) | 2013-05-15 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007508477A Active JP5197002B2 (ja) | 2004-04-14 | 2005-04-11 | 増強されたハイブリッド固体センサ |
Country Status (10)
Country | Link |
---|---|
US (1) | US7015452B2 (ja) |
EP (1) | EP1741121B1 (ja) |
JP (1) | JP5197002B2 (ja) |
KR (1) | KR101107000B1 (ja) |
CN (1) | CN1943000A (ja) |
AU (1) | AU2005239319B2 (ja) |
CA (1) | CA2563154A1 (ja) |
DE (1) | DE602005017603D1 (ja) |
RU (1) | RU2383963C2 (ja) |
WO (1) | WO2005106916A1 (ja) |
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- 2005-04-11 AU AU2005239319A patent/AU2005239319B2/en not_active Ceased
- 2005-04-11 KR KR1020067019343A patent/KR101107000B1/ko not_active IP Right Cessation
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- 2005-04-11 RU RU2006139943/09A patent/RU2383963C2/ru not_active IP Right Cessation
- 2005-04-11 WO PCT/US2005/012438 patent/WO2005106916A1/en active Application Filing
- 2005-04-11 JP JP2007508477A patent/JP5197002B2/ja active Active
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- 2005-04-11 DE DE602005017603T patent/DE602005017603D1/de active Active
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JP2015507321A (ja) * | 2011-12-12 | 2015-03-05 | ケーエルエー−テンカー コーポレイション | 電子衝撃電荷結合素子(ebccd)、およびebccd検出器を用いた検出システム |
Also Published As
Publication number | Publication date |
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AU2005239319B2 (en) | 2010-04-22 |
CN1943000A (zh) | 2007-04-04 |
JP5197002B2 (ja) | 2013-05-15 |
US7015452B2 (en) | 2006-03-21 |
DE602005017603D1 (de) | 2009-12-24 |
US20050167575A1 (en) | 2005-08-04 |
CA2563154A1 (en) | 2005-11-10 |
EP1741121B1 (en) | 2009-11-11 |
EP1741121A1 (en) | 2007-01-10 |
WO2005106916A1 (en) | 2005-11-10 |
RU2006139943A (ru) | 2008-05-20 |
KR101107000B1 (ko) | 2012-01-25 |
KR20070007801A (ko) | 2007-01-16 |
AU2005239319A1 (en) | 2005-11-10 |
RU2383963C2 (ru) | 2010-03-10 |
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