JP2015504568A5 - - Google Patents
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- JP2015504568A5 JP2015504568A5 JP2014533992A JP2014533992A JP2015504568A5 JP 2015504568 A5 JP2015504568 A5 JP 2015504568A5 JP 2014533992 A JP2014533992 A JP 2014533992A JP 2014533992 A JP2014533992 A JP 2014533992A JP 2015504568 A5 JP2015504568 A5 JP 2015504568A5
- Authority
- JP
- Japan
- Prior art keywords
- etched
- copper
- silicon
- aqueous
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 229910052802 copper Inorganic materials 0.000 claims 14
- 239000010949 copper Substances 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 12
- 239000000463 material Substances 0.000 claims 10
- 239000007800 oxidant agent Substances 0.000 claims 8
- 230000008021 deposition Effects 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 4
- 229910001431 copper ion Inorganic materials 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 3
- 238000005137 deposition process Methods 0.000 claims 2
- -1 fluoride ions Chemical class 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 2
- 239000011863 silicon-based powder Substances 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 229910020366 ClO 4 Inorganic materials 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000011149 active material Substances 0.000 claims 1
- 229910001963 alkali metal nitrate Inorganic materials 0.000 claims 1
- DVARTQFDIMZBAA-UHFFFAOYSA-O ammonium nitrate Chemical class [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000011530 conductive current collector Substances 0.000 claims 1
- 150000001879 copper Chemical class 0.000 claims 1
- 229910021360 copper silicide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000002409 silicon-based active material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1117279.8 | 2011-10-06 | ||
| GBGB1117279.8A GB201117279D0 (en) | 2011-10-06 | 2011-10-06 | Etched silicon structures, method of forming etched silicon structures and uses thereof |
| PCT/GB2012/052483 WO2013050785A1 (en) | 2011-10-06 | 2012-10-05 | Etched silicon structures, method of forming etched silicon structures and uses thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015504568A JP2015504568A (ja) | 2015-02-12 |
| JP2015504568A5 true JP2015504568A5 (enExample) | 2015-11-26 |
Family
ID=45035271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014533992A Pending JP2015504568A (ja) | 2011-10-06 | 2012-10-05 | エッチングされたシリコン構造、エッチングされたシリコン構造を形成する方法及びそれらの使用 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20140248539A1 (enExample) |
| EP (1) | EP2764563B1 (enExample) |
| JP (1) | JP2015504568A (enExample) |
| KR (1) | KR20140083006A (enExample) |
| CN (1) | CN103988342A (enExample) |
| GB (2) | GB201117279D0 (enExample) |
| WO (1) | WO2013050785A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201122315D0 (en) * | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
| WO2013151665A2 (en) * | 2012-04-02 | 2013-10-10 | modeRNA Therapeutics | Modified polynucleotides for the production of proteins associated with human disease |
| CN104411338A (zh) * | 2012-04-02 | 2015-03-11 | 现代治疗公司 | 用于产生与人类疾病相关的生物制剂和蛋白质的修饰多核苷酸 |
| WO2014193124A1 (ko) * | 2013-05-30 | 2014-12-04 | 주식회사 엘지화학 | 다공성 실리콘계 음극 활물질, 이의 제조 방법, 및 이를 포함하는 리튬 이차전지 |
| EP3033788A1 (en) * | 2013-08-14 | 2016-06-22 | Board of Regents, The University of Texas System | Methods of fabricating silicon nanowires and devices containing silicon nanowires |
| WO2015065394A1 (en) | 2013-10-30 | 2015-05-07 | Hewlett-Packard Development Company, L.P. | Island etched filter passages |
| CN105682780B (zh) * | 2013-10-30 | 2018-03-13 | 惠普发展公司，有限责任合伙企业 | 不平行岛蚀刻 |
| CN105103346B (zh) * | 2013-12-03 | 2018-11-06 | 株式会社Lg 化学 | 多孔性硅类负极活性物质及其制备方法、以及包含它的锂二次电池 |
| CN104803342B (zh) * | 2014-01-23 | 2016-08-17 | 清华大学 | 碗状金属纳米结构的制备方法 |
| JP6121959B2 (ja) * | 2014-09-11 | 2017-04-26 | 株式会社東芝 | エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液 |
| KR101677023B1 (ko) * | 2014-10-17 | 2016-11-17 | 한양대학교 에리카산학협력단 | 실리콘 표면 에칭방법 및 시드층 형성방법 |
| DE102015212202A1 (de) * | 2015-06-30 | 2017-01-05 | Robert Bosch Gmbh | Siliciummonolith-Graphit-Anode für eine Lithium-Zelle |
| KR101801789B1 (ko) | 2015-11-05 | 2017-11-28 | 한국과학기술연구원 | 다공성 탄소 재료 및 이의 제조 방법 |
| KR101859811B1 (ko) * | 2016-03-07 | 2018-06-28 | 한국과학기술원 | 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법 |
| US11289700B2 (en) | 2016-06-28 | 2022-03-29 | The Research Foundation For The State University Of New York | KVOPO4 cathode for sodium ion batteries |
| CN108075164A (zh) * | 2016-11-09 | 2018-05-25 | 林逸樵 | 二次电池及其制作方法 |
| CN108232204A (zh) * | 2016-12-10 | 2018-06-29 | 中国科学院大连化学物理研究所 | 一种硅基有序化电极及其制备方法和应用 |
| WO2018119679A1 (en) * | 2016-12-27 | 2018-07-05 | China Triumph International Engineering Co., Ltd. | Method for activation of cdte layer of cdte thin-film solar cells with calcium hypochlorite |
| JP7134778B2 (ja) * | 2018-08-09 | 2022-09-12 | 株式会社東芝 | 処理システム |
| CN109597250B (zh) * | 2018-12-26 | 2021-06-01 | Tcl华星光电技术有限公司 | 蓝相液晶面板的制作方法及其立体电极的制作方法 |
| CN110803706B (zh) * | 2019-12-04 | 2023-03-28 | 宝鸡文理学院 | 一种快速高效脱除介孔氧化硅材料模板剂的方法 |
| US12444764B2 (en) | 2020-02-20 | 2025-10-14 | Flexolyte | Complex fiber, solid state electrolyte comprising same, and metal-air battery comprising same |
| CN115428235A (zh) * | 2020-02-20 | 2022-12-02 | 汉阳大学校Erica产学协力团 | 金属负极电极、包含其的二次电池及其制备方法 |
| WO2022065450A1 (ja) * | 2020-09-25 | 2022-03-31 | 国立大学法人東北大学 | リチウムイオン二次電池用の負極合剤、およびリチウムイオン二次電池 |
| US12315736B2 (en) * | 2022-09-14 | 2025-05-27 | Applied Materials, Inc. | Methods of highly selective silicon oxide removal |
| WO2024249394A1 (en) * | 2023-05-27 | 2024-12-05 | University Of Louisville Research Foundation, Inc. | Materials and methods for high energy density silicon lithium ion batteries |
| KR102861629B1 (ko) * | 2024-06-03 | 2025-09-17 | 한화모멘텀 주식회사 | 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지 |
| CN119419233B (zh) * | 2024-10-09 | 2025-12-19 | 浙江锂威能源科技有限公司 | 一种金属镀层包覆硅基材料及二次电池 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436259A (en) * | 1966-05-12 | 1969-04-01 | Ibm | Method for plating and polishing a silicon planar surface |
| JP3186621B2 (ja) * | 1996-12-24 | 2001-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1208002A4 (en) | 1999-06-03 | 2006-08-02 | Penn State Res Found | MATERIALS WITH NETWORK OF SURFACE POROSITY COLUMNS DEPOSITED IN THIN FILM |
| US6790785B1 (en) * | 2000-09-15 | 2004-09-14 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch porous silicon formation method |
| GB2395059B (en) | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
| US7244513B2 (en) * | 2003-02-21 | 2007-07-17 | Nano-Proprietary, Inc. | Stain-etched silicon powder |
| FR2853562B1 (fr) * | 2003-04-14 | 2006-08-11 | Centre Nat Rech Scient | Procede de fabrication de granules semiconducteurs |
| TW200620451A (en) * | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
| DE102005041877A1 (de) * | 2005-09-02 | 2007-03-08 | Koynov, Svetoslav, Dr. | Verfahren zur Herstellung siliziumhaltiger Oberflächen und optoelektronische Bauelemente |
| GB0601318D0 (en) * | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
| CN101496199B (zh) * | 2006-10-10 | 2010-12-22 | 松下电器产业株式会社 | 非水电解质二次电池用负极 |
| JP2008171802A (ja) * | 2006-12-13 | 2008-07-24 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とその製造方法およびそれを用いた非水電解質二次電池 |
| FR2914925B1 (fr) | 2007-04-13 | 2009-06-05 | Altis Semiconductor Snc | Solution utilisee dans la fabrication d'un materiau semi-conducteur poreux et procede de fabrication dudit materiau |
| GB0709165D0 (en) * | 2007-05-11 | 2007-06-20 | Nexeon Ltd | A silicon anode for a rechargeable battery |
| GB0713898D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries |
| US8815104B2 (en) * | 2008-03-21 | 2014-08-26 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
| WO2010027962A2 (en) * | 2008-09-04 | 2010-03-11 | The Board Of Trustees Of The University Of Illinois | Method of forming a nanoscale three-demensional pattern in a porous semiconductor |
| GB2464158B (en) * | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| EP2226374B1 (en) * | 2009-03-06 | 2012-05-16 | S.O.I. TEC Silicon | Etching composition, in particular for silicon materials, method for characterizing defects of such materials and process of treating such surfaces with etching composition |
| US8278191B2 (en) * | 2009-03-31 | 2012-10-02 | Georgia Tech Research Corporation | Methods and systems for metal-assisted chemical etching of substrates |
| KR101103841B1 (ko) * | 2009-05-27 | 2012-01-06 | 한국과학기술연구원 | 금속이온 이용 무전해 에칭법에 의한 다발구조의 실리콘 나노로드 제조방법 및 이를 함유하는 리튬이차전지용 음극 활물질 |
| GB0922063D0 (en) | 2009-12-17 | 2010-02-03 | Intrinsiq Materials Global Ltd | Porous silicon |
| TWI472477B (zh) | 2010-03-02 | 2015-02-11 | 國立臺灣大學 | 矽奈米結構與其製造方法及應用 |
| GB201005979D0 (en) * | 2010-04-09 | 2010-05-26 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
-
2011
- 2011-10-06 GB GBGB1117279.8A patent/GB201117279D0/en not_active Ceased
-
2012
- 2012-10-05 WO PCT/GB2012/052483 patent/WO2013050785A1/en not_active Ceased
- 2012-10-05 JP JP2014533992A patent/JP2015504568A/ja active Pending
- 2012-10-05 GB GB1217909.9A patent/GB2495405B/en not_active Expired - Fee Related
- 2012-10-05 KR KR1020147012116A patent/KR20140083006A/ko not_active Withdrawn
- 2012-10-05 EP EP12772390.6A patent/EP2764563B1/en not_active Not-in-force
- 2012-10-05 US US14/349,498 patent/US20140248539A1/en not_active Abandoned
- 2012-10-05 CN CN201280060454.7A patent/CN103988342A/zh active Pending
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