CN103988342A - 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 - Google Patents

蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 Download PDF

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Publication number
CN103988342A
CN103988342A CN201280060454.7A CN201280060454A CN103988342A CN 103988342 A CN103988342 A CN 103988342A CN 201280060454 A CN201280060454 A CN 201280060454A CN 103988342 A CN103988342 A CN 103988342A
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CN
China
Prior art keywords
silicon
etched
copper
etching
composition
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Pending
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CN201280060454.7A
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English (en)
Chinese (zh)
Inventor
刘峰明
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Nexeon Ltd
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Nexeon Ltd
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Publication of CN103988342A publication Critical patent/CN103988342A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00—Batteries for particular applications
    • H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
CN201280060454.7A 2011-10-06 2012-10-05 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 Pending CN103988342A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1117279.8A GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof
GB1117279.8 2011-10-06
PCT/GB2012/052483 WO2013050785A1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Publications (1)

Publication Number Publication Date
CN103988342A true CN103988342A (zh) 2014-08-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280060454.7A Pending CN103988342A (zh) 2011-10-06 2012-10-05 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用

Country Status (7)

Country Link
US (1) US20140248539A1 (enExample)
EP (1) EP2764563B1 (enExample)
JP (1) JP2015504568A (enExample)
KR (1) KR20140083006A (enExample)
CN (1) CN103988342A (enExample)
GB (2) GB201117279D0 (enExample)
WO (1) WO2013050785A1 (enExample)

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CN107820644A (zh) * 2015-06-30 2018-03-20 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
CN109597250A (zh) * 2018-12-26 2019-04-09 深圳市华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706A (zh) * 2019-12-04 2020-02-18 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN119419233A (zh) * 2024-10-09 2025-02-11 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

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HK1206612A1 (en) * 2012-04-02 2016-01-15 Moderna Therapeutics, Inc. Modified polynucleotides for the production of secreted proteins
IN2015DN00810A (enExample) * 2013-05-30 2015-06-12 Lg Chemical Ltd
EP3033788A1 (en) * 2013-08-14 2016-06-22 Board of Regents, The University of Texas System Methods of fabricating silicon nanowires and devices containing silicon nanowires
US10086317B2 (en) 2013-10-30 2018-10-02 Hewlett-Packard Development Company, L.P. Island etched filter passages
US9938139B2 (en) * 2013-10-30 2018-04-10 Hewlett-Packard Development Company, L.P. Nonparallel island etching
PL2903062T3 (pl) 2013-12-03 2020-07-13 Lg Chem, Ltd. Porowaty materiał czynny anody na bazie krzemu i sposób jego wytwarzania oraz zawierający go akumulator litowy
CN104803342B (zh) * 2014-01-23 2016-08-17 清华大学 碗状金属纳米结构的制备方法
JP6121959B2 (ja) * 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
KR101677023B1 (ko) * 2014-10-17 2016-11-17 한양대학교 에리카산학협력단 실리콘 표면 에칭방법 및 시드층 형성방법
KR101801789B1 (ko) 2015-11-05 2017-11-28 한국과학기술연구원 다공성 탄소 재료 및 이의 제조 방법
KR101859811B1 (ko) * 2016-03-07 2018-06-28 한국과학기술원 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법
US11289700B2 (en) 2016-06-28 2022-03-29 The Research Foundation For The State University Of New York KVOPO4 cathode for sodium ion batteries
WO2018119679A1 (en) * 2016-12-27 2018-07-05 China Triumph International Engineering Co., Ltd. Method for activation of cdte layer of cdte thin-film solar cells with calcium hypochlorite
JP7134778B2 (ja) * 2018-08-09 2022-09-12 株式会社東芝 処理システム
JP7448998B2 (ja) 2020-02-20 2024-03-13 漢陽大学校エリカ産学協力団 複合繊維、これを含む固体電解質、及びこれを含む金属空気電池
EP4109639A4 (en) * 2020-02-20 2025-06-04 Industry-University Cooperation Foundation Hanyang University ERICA Campus Metal negative electrode, secondary battery comprising same, and method for producing same
CN116235312A (zh) * 2020-09-25 2023-06-06 国立大学法人东北大学 锂离子二次电池用负极合剂及锂离子二次电池
JP2023183441A (ja) * 2022-06-16 2023-12-28 国立大学法人 名古屋工業大学 シリコンポーラス層及びポーラスシリコンナノワイヤーを備えるシリコンナノ構造とナノカーボンとの複合体
US12315736B2 (en) * 2022-09-14 2025-05-27 Applied Materials, Inc. Methods of highly selective silicon oxide removal
WO2024249394A1 (en) * 2023-05-27 2024-12-05 University Of Louisville Research Foundation, Inc. Materials and methods for high energy density silicon lithium ion batteries
KR102861629B1 (ko) * 2024-06-03 2025-09-17 한화모멘텀 주식회사 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107820644A (zh) * 2015-06-30 2018-03-20 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN107820644B (zh) * 2015-06-30 2022-07-12 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
CN109597250A (zh) * 2018-12-26 2019-04-09 深圳市华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706A (zh) * 2019-12-04 2020-02-18 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN110803706B (zh) * 2019-12-04 2023-03-28 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN119419233A (zh) * 2024-10-09 2025-02-11 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

Also Published As

Publication number Publication date
EP2764563A1 (en) 2014-08-13
GB2495405B (en) 2014-11-12
EP2764563B1 (en) 2016-09-21
GB2495405A (en) 2013-04-10
US20140248539A1 (en) 2014-09-04
GB201217909D0 (en) 2012-11-21
WO2013050785A1 (en) 2013-04-11
GB201117279D0 (en) 2011-11-16
KR20140083006A (ko) 2014-07-03
JP2015504568A (ja) 2015-02-12

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Application publication date: 20140813