CN103988342A - 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 - Google Patents

蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 Download PDF

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Publication number
CN103988342A
CN103988342A CN201280060454.7A CN201280060454A CN103988342A CN 103988342 A CN103988342 A CN 103988342A CN 201280060454 A CN201280060454 A CN 201280060454A CN 103988342 A CN103988342 A CN 103988342A
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silicon
etched
copper
etching
composition
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CN201280060454.7A
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Chinese (zh)
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刘峰明
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Nexeon Ltd
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Nexeon Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00—Batteries for particular applications
    • H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
CN201280060454.7A 2011-10-06 2012-10-05 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用 Pending CN103988342A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1117279.8A GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof
GB1117279.8 2011-10-06
PCT/GB2012/052483 WO2013050785A1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Publications (1)

Publication Number Publication Date
CN103988342A true CN103988342A (zh) 2014-08-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280060454.7A Pending CN103988342A (zh) 2011-10-06 2012-10-05 蚀刻的硅结构、形成蚀刻的硅结构的方法及其应用

Country Status (7)

Country Link
US (1) US20140248539A1 (enExample)
EP (1) EP2764563B1 (enExample)
JP (1) JP2015504568A (enExample)
KR (1) KR20140083006A (enExample)
CN (1) CN103988342A (enExample)
GB (2) GB201117279D0 (enExample)
WO (1) WO2013050785A1 (enExample)

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CN107820644A (zh) * 2015-06-30 2018-03-20 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
CN109597250A (zh) * 2018-12-26 2019-04-09 深圳市华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706A (zh) * 2019-12-04 2020-02-18 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN119419233A (zh) * 2024-10-09 2025-02-11 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

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AU2013243949A1 (en) * 2012-04-02 2014-10-30 Moderna Therapeutics, Inc. Modified polynucleotides for the production of biologics and proteins associated with human disease
IN2015DN00810A (enExample) 2013-05-30 2015-06-12 Lg Chemical Ltd
EP3033788A1 (en) * 2013-08-14 2016-06-22 Board of Regents, The University of Texas System Methods of fabricating silicon nanowires and devices containing silicon nanowires
JP6171097B2 (ja) * 2013-10-30 2017-07-26 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 非平行アイランドエッチング
WO2015065394A1 (en) 2013-10-30 2015-05-07 Hewlett-Packard Development Company, L.P. Island etched filter passages
US10205164B2 (en) 2013-12-03 2019-02-12 Lg Chem Ltd. Porous silicon-based anode active material, method for preparing the same, and lithium secondary battery comprising the same
CN104803342B (zh) * 2014-01-23 2016-08-17 清华大学 碗状金属纳米结构的制备方法
JP6121959B2 (ja) * 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
KR101677023B1 (ko) * 2014-10-17 2016-11-17 한양대학교 에리카산학협력단 실리콘 표면 에칭방법 및 시드층 형성방법
KR101801789B1 (ko) 2015-11-05 2017-11-28 한국과학기술연구원 다공성 탄소 재료 및 이의 제조 방법
KR101859811B1 (ko) * 2016-03-07 2018-06-28 한국과학기술원 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법
US11289700B2 (en) 2016-06-28 2022-03-29 The Research Foundation For The State University Of New York KVOPO4 cathode for sodium ion batteries
CN108604617B (zh) * 2016-12-27 2022-06-28 中国建材国际工程集团有限公司 用次氯酸钙活化CdTe薄膜太阳能电池的CdTe层的方法
JP7134778B2 (ja) * 2018-08-09 2022-09-12 株式会社東芝 処理システム
CN115428235A (zh) * 2020-02-20 2022-12-02 汉阳大学校Erica产学协力团 金属负极电极、包含其的二次电池及其制备方法
JP7448998B2 (ja) 2020-02-20 2024-03-13 漢陽大学校エリカ産学協力団 複合繊維、これを含む固体電解質、及びこれを含む金属空気電池
US20230343941A1 (en) * 2020-09-25 2023-10-26 Tohoku University Lithium-ion secondary battery negative electrode mixture and lithium-ion secondary battery
US12315736B2 (en) * 2022-09-14 2025-05-27 Applied Materials, Inc. Methods of highly selective silicon oxide removal
WO2024249394A1 (en) * 2023-05-27 2024-12-05 University Of Louisville Research Foundation, Inc. Materials and methods for high energy density silicon lithium ion batteries
KR102861629B1 (ko) * 2024-06-03 2025-09-17 한화모멘텀 주식회사 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107820644A (zh) * 2015-06-30 2018-03-20 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN107820644B (zh) * 2015-06-30 2022-07-12 罗伯特·博世有限公司 用于锂电池的硅单片石墨阳极
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
CN109597250A (zh) * 2018-12-26 2019-04-09 深圳市华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706A (zh) * 2019-12-04 2020-02-18 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN110803706B (zh) * 2019-12-04 2023-03-28 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
CN119419233A (zh) * 2024-10-09 2025-02-11 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

Also Published As

Publication number Publication date
GB201117279D0 (en) 2011-11-16
KR20140083006A (ko) 2014-07-03
GB201217909D0 (en) 2012-11-21
GB2495405A (en) 2013-04-10
GB2495405B (en) 2014-11-12
US20140248539A1 (en) 2014-09-04
EP2764563A1 (en) 2014-08-13
EP2764563B1 (en) 2016-09-21
JP2015504568A (ja) 2015-02-12
WO2013050785A1 (en) 2013-04-11

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Application publication date: 20140813