JP6171097B2 - 非平行アイランドエッチング - Google Patents
非平行アイランドエッチング Download PDFInfo
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- JP6171097B2 JP6171097B2 JP2016525973A JP2016525973A JP6171097B2 JP 6171097 B2 JP6171097 B2 JP 6171097B2 JP 2016525973 A JP2016525973 A JP 2016525973A JP 2016525973 A JP2016525973 A JP 2016525973A JP 6171097 B2 JP6171097 B2 JP 6171097B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00119—Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/049—Manufacturing of an active layer by chemical means
- H01M4/0492—Chemical attack of the support material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Filtering Materials (AREA)
- ing And Chemical Polishing (AREA)
Description
Claims (14)
- 基板の第1の面及び第2の面にエッチングアイランドを形成するステップであって、該第1の面と該第2の面は非平行である、ステップと、
前記基板の前記第1の面から内部に延びる第1の多孔質領域及び前記第2の面から内部に延びる第2の多孔質領域を同時に形成するために、前記第1の面と前記第2の面を、前記エッチングアイランドと反応する溶液に同時にさらすステップと、
前記基板内にエッチング制御器を形成するステップ
を含み、
前記エッチング制御器は、前記基板内で前記エッチングアイランドと相互作用しているときに前記エッチングアイランドのエッチング速度を調節することからなる、方法。 - 前記第1及び第2の多孔質領域は相互接続された孔を含む、請求項1の方法。
- 前記第1の多孔質領域と前記第2の多孔質領域を相互接続して、前記基板を貫通するフィルター通路を形成するステップを含む、請求項1または2の方法。
- 前記第1の面に形成されたエッチングアイランドは、前記溶液にさらされているときに第1のエッチング速度を有し、前記第2の面に形成されたエッチングアイランドは、前記溶液にさらされているときに前記第1のエッチング速度とは異なる第2のエッチング速度を有する、請求項1〜3のいずれかの方法。
- 前記エッチング制御器はエッチング抑制剤を含む、請求項1〜4のいずれかの方法。
- 前記基板内に前記エッチング制御器を形成する前記ステップは、前記基板にドープするステップを含む、請求項1〜4のいずれかの方法。
- 前記基板を前記溶液に浸すステップを含む、請求項1〜6のいずれかの方法。
- 前記第1及び第2の多孔質領域を除去するステップをさらに含む、請求項1〜7のいずれかの方法。
- 前記基板の第3の面にエッチングアイランドを形成するステップであって、該第3の面は、前記第1の面と非平行であり、かつ、前記第2の面と非平行である、ステップと、
前記第1の多孔質領域、前記第2の多孔質領域、及び前記第3の面から内部に延びる第3の多孔質領域を同時に形成するために、前記第1の面と前記第2の面を、前記エッチングアイランドと反応する溶液に同時にさらす前記ステップに代えて、前記第1の面と前記第2の面と前記第3の面を、前記エッチングアイランドと反応する溶液に同時にさらすステップ
をさらに含む、請求項1の方法。 - 前記第1、第2及び第3の多孔質領域を除去するステップをさらに含む、請求項9の方法。
- 基板上に導電性金属からなるエッチングアイランドを形成するステップと、
前記エッチングアイランドが前記基板内へとエッチングして、前記基板内に埋め込まれた金属化領域を形成するように、前記基板を、前記エッチングアイランドと反応する溶液にさらすステップと、
前記埋め込まれた金属化領域を封入するステップ
を含む方法。 - 基板と、
前記基板の第1の面から前記基板内に延びる複数の孔からなる第1の領域と、
前記基板の第2の面から前記基板内に延びる複数の孔からなる第2の領域であって、前記第2の面は前記第1の面と非平行である、第2の領域と、
前記第1の領域内及び前記第2の領域内の金属アイランド
を備え、
前記金属アイランドは、前記第1の領域内及び前記第2の領域内に封入されていることからなる、装置。 - 前記基板の第3の面から前記基板内に延びる複数の孔からなる第3の領域をさらに備え、前記第3の面は、前記第1の面と非平行であり、かつ、前記第2の面と非平行である、請求項12の装置。
- 前記第1の領域は前記第1の面から内部に第1の深さまで延び、前記第2の領域は前記第2の面から内部に前記第1の深さとは異なる第2の深さまで延びる、請求項12または13の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2013/067600 WO2015065395A1 (en) | 2013-10-30 | 2013-10-30 | Nonparallel island etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016537207A JP2016537207A (ja) | 2016-12-01 |
JP6171097B2 true JP6171097B2 (ja) | 2017-07-26 |
Family
ID=53004808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016525973A Expired - Fee Related JP6171097B2 (ja) | 2013-10-30 | 2013-10-30 | 非平行アイランドエッチング |
Country Status (5)
Country | Link |
---|---|
US (1) | US9938139B2 (ja) |
EP (1) | EP3062918B1 (ja) |
JP (1) | JP6171097B2 (ja) |
CN (1) | CN105682780B (ja) |
WO (1) | WO2015065395A1 (ja) |
Family Cites Families (23)
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WO2002103752A2 (en) | 2000-11-27 | 2002-12-27 | The Board Of Trustees Of The University Of Illinois | Metal-assisted chemical etch to produce porous group iii-v materials |
AU2003242229A1 (en) * | 2002-06-06 | 2003-12-22 | Kansai Technology Licensing Organization Co., Ltd. | Method for producing polycrystalline silicon substrate for solar cell |
JP2004165781A (ja) * | 2002-11-11 | 2004-06-10 | Sumitomo Metal Electronics Devices Inc | 誘電体フィルタの製造方法 |
US6902962B2 (en) | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
US7625603B2 (en) | 2003-11-14 | 2009-12-01 | Robert Bosch Gmbh | Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics |
TW200620451A (en) | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
WO2006119251A2 (en) | 2005-04-29 | 2006-11-09 | University Of Rochester | Ultrathin porous nanoscale membranes, methods of making, and uses thereof |
US7510967B2 (en) | 2006-05-29 | 2009-03-31 | Nec Electronics Corporation | Method for manufacturing semiconductor device |
KR100849366B1 (ko) | 2006-08-24 | 2008-07-31 | 세메스 주식회사 | 기판을 처리하는 장치 및 방법 |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
EP2404317A4 (en) | 2009-03-06 | 2014-06-11 | Solexel Inc | METHOD FOR MANUFACTURING THIN FILM SUBSTRATE |
US8278191B2 (en) * | 2009-03-31 | 2012-10-02 | Georgia Tech Research Corporation | Methods and systems for metal-assisted chemical etching of substrates |
JP2010248449A (ja) | 2009-04-20 | 2010-11-04 | Mitsui Eng & Shipbuild Co Ltd | ガスハイドレート製造方法及び装置 |
US8263006B2 (en) | 2009-05-31 | 2012-09-11 | Corning Incorporated | Reactor with upper and lower manifold structures |
WO2011028054A2 (ko) | 2009-09-03 | 2011-03-10 | 한국표준과학연구원 | 다공성 금속박막을 이용한 실리콘 나노선 어레이 제조방법 |
JP5596330B2 (ja) | 2009-11-16 | 2014-09-24 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置及びその製造方法 |
US8568877B2 (en) * | 2010-03-09 | 2013-10-29 | Board Of Regents Of The University Of Texas System | Porous and non-porous nanostructures |
TW201200465A (en) * | 2010-06-29 | 2012-01-01 | Univ Nat Central | Nano/micro-structure and fabrication method thereof |
GB201117279D0 (en) * | 2011-10-06 | 2011-11-16 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
JP5917082B2 (ja) | 2011-10-20 | 2016-05-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
GB201122315D0 (en) * | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
GB201205178D0 (en) * | 2012-03-23 | 2012-05-09 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
-
2013
- 2013-10-30 JP JP2016525973A patent/JP6171097B2/ja not_active Expired - Fee Related
- 2013-10-30 EP EP13896392.1A patent/EP3062918B1/en active Active
- 2013-10-30 US US15/033,015 patent/US9938139B2/en active Active
- 2013-10-30 WO PCT/US2013/067600 patent/WO2015065395A1/en active Application Filing
- 2013-10-30 CN CN201380080641.6A patent/CN105682780B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2016537207A (ja) | 2016-12-01 |
CN105682780A (zh) | 2016-06-15 |
EP3062918B1 (en) | 2021-03-17 |
EP3062918A4 (en) | 2017-07-26 |
US20160244885A1 (en) | 2016-08-25 |
CN105682780B (zh) | 2018-03-13 |
EP3062918A1 (en) | 2016-09-07 |
US9938139B2 (en) | 2018-04-10 |
WO2015065395A1 (en) | 2015-05-07 |
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