KR20140083006A - 에칭된 실리콘 구조, 이의 제조방법 및 이의 용도 - Google Patents

에칭된 실리콘 구조, 이의 제조방법 및 이의 용도 Download PDF

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Publication number
KR20140083006A
KR20140083006A KR1020147012116A KR20147012116A KR20140083006A KR 20140083006 A KR20140083006 A KR 20140083006A KR 1020147012116 A KR1020147012116 A KR 1020147012116A KR 20147012116 A KR20147012116 A KR 20147012116A KR 20140083006 A KR20140083006 A KR 20140083006A
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South Korea
Prior art keywords
silicon
etched
copper
aqueous
etching
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KR1020147012116A
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English (en)
Korean (ko)
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펭밍 리우
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넥세온 엘티디
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Publication of KR20140083006A publication Critical patent/KR20140083006A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0404—Methods of deposition of the material by coating on electrode collectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00—Batteries for particular applications
    • H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Silicon Compounds (AREA)
  • ing And Chemical Polishing (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
KR1020147012116A 2011-10-06 2012-10-05 에칭된 실리콘 구조, 이의 제조방법 및 이의 용도 Withdrawn KR20140083006A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1117279.8 2011-10-06
GBGB1117279.8A GB201117279D0 (en) 2011-10-06 2011-10-06 Etched silicon structures, method of forming etched silicon structures and uses thereof
PCT/GB2012/052483 WO2013050785A1 (en) 2011-10-06 2012-10-05 Etched silicon structures, method of forming etched silicon structures and uses thereof

Publications (1)

Publication Number Publication Date
KR20140083006A true KR20140083006A (ko) 2014-07-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147012116A Withdrawn KR20140083006A (ko) 2011-10-06 2012-10-05 에칭된 실리콘 구조, 이의 제조방법 및 이의 용도

Country Status (7)

Country Link
US (1) US20140248539A1 (enExample)
EP (1) EP2764563B1 (enExample)
JP (1) JP2015504568A (enExample)
KR (1) KR20140083006A (enExample)
CN (1) CN103988342A (enExample)
GB (2) GB201117279D0 (enExample)
WO (1) WO2013050785A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
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KR20160045306A (ko) * 2014-10-17 2016-04-27 한양대학교 에리카산학협력단 실리콘 표면 에칭방법 및 시드층 형성방법
US9701902B2 (en) 2014-09-11 2017-07-11 Kabushiki Kaisha Toshiba Etching method, method of manufacturing article, and etching solution
KR20170104235A (ko) * 2016-03-07 2017-09-15 한국과학기술원 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법
US10454115B2 (en) 2015-11-05 2019-10-22 Korea Institute Of Science And Technology Porous carbon materials and methods of manufacturing the same
WO2024058794A1 (en) * 2022-09-14 2024-03-21 Applied Materials, Inc. Methods of highly selective silicon oxide removal
KR102861629B1 (ko) * 2024-06-03 2025-09-17 한화모멘텀 주식회사 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지

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GB201122315D0 (en) * 2011-12-23 2012-02-01 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2013151664A1 (en) * 2012-04-02 2013-10-10 modeRNA Therapeutics Modified polynucleotides for the production of proteins
CN104411338A (zh) * 2012-04-02 2015-03-11 现代治疗公司 用于产生与人类疾病相关的生物制剂和蛋白质的修饰多核苷酸
CN104662715B (zh) * 2013-05-30 2018-09-28 株式会社Lg 化学 多孔性硅类负极活性物质及其制备方法、包含它的锂二次电池
EP3033788A1 (en) * 2013-08-14 2016-06-22 Board of Regents, The University of Texas System Methods of fabricating silicon nanowires and devices containing silicon nanowires
JP6171097B2 (ja) * 2013-10-30 2017-07-26 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 非平行アイランドエッチング
US10086317B2 (en) 2013-10-30 2018-10-02 Hewlett-Packard Development Company, L.P. Island etched filter passages
US10205164B2 (en) 2013-12-03 2019-02-12 Lg Chem Ltd. Porous silicon-based anode active material, method for preparing the same, and lithium secondary battery comprising the same
CN104803342B (zh) * 2014-01-23 2016-08-17 清华大学 碗状金属纳米结构的制备方法
DE102015212202A1 (de) * 2015-06-30 2017-01-05 Robert Bosch Gmbh Siliciummonolith-Graphit-Anode für eine Lithium-Zelle
US11289700B2 (en) 2016-06-28 2022-03-29 The Research Foundation For The State University Of New York KVOPO4 cathode for sodium ion batteries
CN108075164A (zh) * 2016-11-09 2018-05-25 林逸樵 二次电池及其制作方法
CN108232204A (zh) * 2016-12-10 2018-06-29 中国科学院大连化学物理研究所 一种硅基有序化电极及其制备方法和应用
CN108604617B (zh) * 2016-12-27 2022-06-28 中国建材国际工程集团有限公司 用次氯酸钙活化CdTe薄膜太阳能电池的CdTe层的方法
JP7134778B2 (ja) * 2018-08-09 2022-09-12 株式会社東芝 処理システム
CN109597250B (zh) * 2018-12-26 2021-06-01 Tcl华星光电技术有限公司 蓝相液晶面板的制作方法及其立体电极的制作方法
CN110803706B (zh) * 2019-12-04 2023-03-28 宝鸡文理学院 一种快速高效脱除介孔氧化硅材料模板剂的方法
WO2021167432A1 (ko) 2020-02-20 2021-08-26 한양대학교 에리카산학협력단 전극 구조체, 이를 포함하는 금속 공기 전지의 양극용 전극 구조체, 및 그 제조 방법
US20230092377A1 (en) * 2020-02-20 2023-03-23 Industry-University Cooperation Foundation Hanyang University Erica Campus Metal negative electrode, secondary battery comprising same, and method for producing same
EP4109635A4 (en) 2020-02-20 2025-04-16 Industry-University Cooperation Foundation Hanyang University ERICA Campus Composite fiber, solid electrolyte comprising same, and metal air battery comprising same
CN116235312A (zh) * 2020-09-25 2023-06-06 国立大学法人东北大学 锂离子二次电池用负极合剂及锂离子二次电池
JP7883748B2 (ja) * 2022-06-16 2026-07-02 国立大学法人 名古屋工業大学 シリコンポーラス層及びポーラスシリコンナノワイヤーを備えるシリコンナノ構造とナノカーボンとの複合体
WO2024249394A1 (en) * 2023-05-27 2024-12-05 University Of Louisville Research Foundation, Inc. Materials and methods for high energy density silicon lithium ion batteries
CN119419233B (zh) * 2024-10-09 2025-12-19 浙江锂威能源科技有限公司 一种金属镀层包覆硅基材料及二次电池

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9701902B2 (en) 2014-09-11 2017-07-11 Kabushiki Kaisha Toshiba Etching method, method of manufacturing article, and etching solution
KR20170134292A (ko) * 2014-09-11 2017-12-06 가부시끼가이샤 도시바 에칭 방법, 물품 및 반도체 장치의 제조 방법, 및 에칭액
KR20160045306A (ko) * 2014-10-17 2016-04-27 한양대학교 에리카산학협력단 실리콘 표면 에칭방법 및 시드층 형성방법
US10454115B2 (en) 2015-11-05 2019-10-22 Korea Institute Of Science And Technology Porous carbon materials and methods of manufacturing the same
KR20170104235A (ko) * 2016-03-07 2017-09-15 한국과학기술원 금속 나노입자와 금속 초박막이 코팅된 전도성 단결정 실리콘 입자, 이를 포함하는 고용량 이차전지용 음극활물질 및 그 제조방법
WO2024058794A1 (en) * 2022-09-14 2024-03-21 Applied Materials, Inc. Methods of highly selective silicon oxide removal
US12315736B2 (en) 2022-09-14 2025-05-27 Applied Materials, Inc. Methods of highly selective silicon oxide removal
KR102861629B1 (ko) * 2024-06-03 2025-09-17 한화모멘텀 주식회사 음극재 및 이의 제조방법, 이를 포함하는 리튬이온 이차전지

Also Published As

Publication number Publication date
GB201117279D0 (en) 2011-11-16
EP2764563A1 (en) 2014-08-13
JP2015504568A (ja) 2015-02-12
GB2495405B (en) 2014-11-12
GB201217909D0 (en) 2012-11-21
GB2495405A (en) 2013-04-10
WO2013050785A1 (en) 2013-04-11
US20140248539A1 (en) 2014-09-04
CN103988342A (zh) 2014-08-13
EP2764563B1 (en) 2016-09-21

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Patent event date: 20140502

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid