JP2015204446A - 半導体モジュール、接合用治具、および半導体モジュールの製造方法 - Google Patents
半導体モジュール、接合用治具、および半導体モジュールの製造方法 Download PDFInfo
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- JP2015204446A JP2015204446A JP2014084809A JP2014084809A JP2015204446A JP 2015204446 A JP2015204446 A JP 2015204446A JP 2014084809 A JP2014084809 A JP 2014084809A JP 2014084809 A JP2014084809 A JP 2014084809A JP 2015204446 A JP2015204446 A JP 2015204446A
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Abstract
Description
本実施形態の半導体モジュール1は、図1に示すように、半導体素子である撮像素子10とフレキシブル配線板(以下、単に「配線板」ともいう)20とを具備する撮像モジュールである。なお、以下の説明において、各実施の形態に基づく図面は、模式的なものであり、各部分の厚みと幅との関係、夫々の部分の厚みの比率などは現実のものとは異なることに留意すべきであり、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている場合がある。
次に、半導体モジュール1の製造方法について図2のフローチャートに沿って説明する。
複数の受光部12と、それぞれの受光部12の周囲に列設された複数のバンプ135と、を受光面10SAに有する、シリコン等からなる半導体ウエハが作製される。
所定の仕様のバイメタル機能を有する基板21と基板22とが積層された配線板20が作製される。配線板20は、半田接合温度への加熱により、接合電極26が配設された接合面20SAを内側に湾曲変形するように設計される。すなわち、接合面20SA側の第1の基板21の熱膨張係数α1よりも、接合面20SAと対向する面の第2の基板22の熱膨張係数α2が大きい。
図3Aに示すように、配線板20を安定に保持するため、後端側が接合用治具30により挟持される。湾曲変形する長さLは適宜選択される。なお、接合用治具30は、配線板20の片面を吸着保持してもよい。
接合電極26とバンプ13とが近接するように配置された状態で、所定の半田接合温度への加熱が行われ、例えば、半田溶融温度よりも10℃高い温度に達するまで加熱される。
第2実施形態の半導体モジュール1Aおよび半導体モジュール1Aの製造方法は、半導体モジュール1等と類似しているので、同じ機能の構成要素には同じ符号を付し、説明は省略する。
第3実施形態の半導体モジュール1Bおよび半導体モジュール1Bの製造方法は、半導体モジュール1等と類似しているので、同じ機能の構成要素には同じ符号を付し、説明は省略する。
第4実施形態の半導体モジュール1Cおよび半導体モジュール1Cの製造方法は、半導体モジュール1等と類似しているので、同じ機能の構成要素には同じ符号を付し、説明は省略する。
図7に示す、第4実施形態の変形例1の半導体モジュールでは、配線板20Dの接合電極(第2の電極)26Dが、半田接合温度において溶融しない金属からなる高さGの凸状電極である。
10…撮像素子
11…半導体チップ
12…受光部
13…半田バンプ(第1の電極)
20…フレキシブル配線板
24…配線
26…接合電極(第2の電極)
30、40…接合用治具
Claims (12)
- 複数の第1の電極が列設された半導体素子と、
前記複数の第1の電極のそれぞれに、それぞれの先端部の第2の電極が半田接合された複数の配線を有する可撓性樹脂を基体とするフレキシブル配線板と、を具備し、
半田接合温度への加熱により前記配線板が湾曲変形することによって、前記第2の電極が前記第1の電極に圧接されることを特徴とする半導体モジュール。 - 熱膨張率の異なる2種類の材料からなる基板が積層された前記配線板が、熱膨張率差により湾曲変形することを特徴とする請求項1に記載の半導体モジュール。
- 前記第1の電極が、半田バンプであり、
前記第2の電極が、前記半田接合温度において溶融しない金属からなる凸状電極であることを特徴とする請求項1または請求項2に記載の半導体モジュール。 - 前記複数の第1の電極が、前記半導体素子の主面に配設されていることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体モジュール。
- 前記複数の第1の電極が、前記半導体素子のテーパー形状の側面に配設されていることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体モジュール。
- 半導体素子に列設された複数の第1の電極のそれぞれと、配線板の複数の配線のそれぞれの先端部の第2の電極とを加熱しながら接合するために用いられる接合用治具であって、
加熱されると保持した前記配線板を湾曲変形させるバイメタル機能を有することを特徴とする接合用治具。 - 複数の第1の電極が列設された半導体素子を作製する工程と、
それぞれが先端部に第2の電極を有する複数の配線が列設された、可撓性樹脂を基体とするフレキシブル配線板を作製する工程と、
前記第1の電極と前記第2の電極とを近接配置する工程と、
前記半導体素子と前記配線板とを半田接合する工程と、を具備する半導体モジュールの製造方法であって、
半田接合温度への加熱により前記配線板が湾曲変形することによって、前記第2の電極が前記第1の電極に圧接されることを特徴とする半導体モジュールの製造方法。 - 前記配線板が、熱膨張率の異なる2種類の材料からなる基板が積層された構成を有し、
前記半田接合する工程において、前記配線板が熱膨張率差により湾曲変形することを特徴とする請求項7に記載の半導体モジュールの製造方法。 - 前記配線板を挟持する接合用治具の前記配線板を挟持する部分が、バイメタル機能を有し、
前記半田接合する工程において、前記接合用治具が熱膨張率差により湾曲変形することを特徴とする請求項8に記載の半導体モジュールの製造方法。 - 前記第1の電極が、半田バンプであり、
前記第2の電極が、前記半田接合温度において溶融しない金属からなる凸状電極であることを特徴とする請求項7から請求項9のいずれか1項に記載の半導体モジュールの製造方法。 - 前記複数の第1の電極が、前記半導体素子の主面に配設されていることを特徴とする請求項7から請求項10のいずれか1項に記載の半導体モジュールの製造方法。
- 前記複数の第1の電極が、前記半導体素子のテーパー形状の側面に配設されていることを特徴とする請求項7から請求項10のいずれか1項に記載の半導体モジュールの製造方法。
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US20170025372A1 (en) | 2017-01-26 |
JP6348759B2 (ja) | 2018-06-27 |
WO2015159566A1 (ja) | 2015-10-22 |
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