JP2015204314A - 積層基板の加工方法 - Google Patents
積層基板の加工方法 Download PDFInfo
- Publication number
- JP2015204314A JP2015204314A JP2014081541A JP2014081541A JP2015204314A JP 2015204314 A JP2015204314 A JP 2015204314A JP 2014081541 A JP2014081541 A JP 2014081541A JP 2014081541 A JP2014081541 A JP 2014081541A JP 2015204314 A JP2015204314 A JP 2015204314A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser processing
- cutting
- laminated substrate
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000003672 processing method Methods 0.000 title abstract description 4
- 239000012790 adhesive layer Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 abstract description 3
- 238000004299 exfoliation Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Laser Beam Processing (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
波長 :355nm(YAGパルスレーザーの第三高調波)
平均出力 :3.0W
繰り返し周波数 :20kHz
集光スポット径 :1.0μm
送り速度 :100mm/s
12 第一基板
13 ストリート
14 第二基板
15 デバイス
16 接着層
17 レーザー加工溝
18 レーザービーム照射ユニット
19,23 切削溝
20 レーザービーム発生ユニット
21,21A,21B チップ
22 集光器
24 撮像ユニット
36 切削ブレード
44 研削ホイール
48 研削砥石
52 分割装置
54 フレーム保持ユニット
56 拡張ドラム
Claims (1)
- 第一基板上に接着層を介して第二基板が貼着され、所定の幅を有するストリートが複数設定された積層基板の加工方法であって、
該積層基板に対して吸収性を有する波長のレーザービームを該ストリートに沿って該第二基板側から照射して、該ストリートの幅内の両側にそれぞれ該第一基板に達する一対のレーザー加工溝を形成するレーザー加工溝形成ステップと、
該レーザー加工溝形成ステップを実施した後、該ストリート内で該一対のレーザー加工溝に挟まれた領域を、該一対のレーザー加工溝からはみ出さない幅の切削ブレードで切削する切削ステップと、
を備えたことを特徴とする積層基板の加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014081541A JP6234312B2 (ja) | 2014-04-11 | 2014-04-11 | 積層基板の加工方法 |
TW104107423A TWI640038B (zh) | 2014-04-11 | 2015-03-09 | Processing method of laminated substrate |
KR1020150041316A KR102256562B1 (ko) | 2014-04-11 | 2015-03-25 | 적층 기판의 가공 방법 |
CN201510161839.8A CN104979183B (zh) | 2014-04-11 | 2015-04-07 | 层叠基板的加工方法 |
PH12015000103A PH12015000103B1 (en) | 2014-04-11 | 2015-04-08 | Processing method for stacked substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014081541A JP6234312B2 (ja) | 2014-04-11 | 2014-04-11 | 積層基板の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015204314A true JP2015204314A (ja) | 2015-11-16 |
JP6234312B2 JP6234312B2 (ja) | 2017-11-22 |
Family
ID=54275584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014081541A Active JP6234312B2 (ja) | 2014-04-11 | 2014-04-11 | 積層基板の加工方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6234312B2 (ja) |
KR (1) | KR102256562B1 (ja) |
CN (1) | CN104979183B (ja) |
PH (1) | PH12015000103B1 (ja) |
TW (1) | TWI640038B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6890885B2 (ja) * | 2017-04-04 | 2021-06-18 | 株式会社ディスコ | 加工方法 |
JP7062449B2 (ja) * | 2018-01-23 | 2022-05-06 | 株式会社ディスコ | 被加工物の切削方法 |
US11081392B2 (en) | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
KR102152007B1 (ko) * | 2020-03-18 | 2020-09-04 | 주식회사 탑 엔지니어링 | 기판 절단 방법 및 기판 절단 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005142398A (ja) * | 2003-11-07 | 2005-06-02 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
US20060189099A1 (en) * | 2005-02-18 | 2006-08-24 | Lu Szu W | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
JP2007294729A (ja) * | 2006-04-26 | 2007-11-08 | Fujikura Ltd | 半導体パッケージの製造方法 |
US20080277806A1 (en) * | 2007-05-08 | 2008-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
JP2010238911A (ja) * | 2009-03-31 | 2010-10-21 | Toppan Printing Co Ltd | Icチップ及びその製造方法 |
JP2011146552A (ja) * | 2010-01-15 | 2011-07-28 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208954A (ja) * | 1989-02-08 | 1990-08-20 | Fujitsu Ltd | 半導体装置の製造方法 |
US6838299B2 (en) * | 2001-11-28 | 2005-01-04 | Intel Corporation | Forming defect prevention trenches in dicing streets |
JP2005064231A (ja) * | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
JP4509820B2 (ja) | 2005-02-15 | 2010-07-21 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法,熱処理板の温度設定装置,プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP2007165789A (ja) * | 2005-12-16 | 2007-06-28 | Olympus Corp | 半導体装置の製造方法 |
JP2008307646A (ja) | 2007-06-15 | 2008-12-25 | Disco Abrasive Syst Ltd | 切削装置 |
JP2009021476A (ja) | 2007-07-13 | 2009-01-29 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5536344B2 (ja) * | 2009-01-09 | 2014-07-02 | 株式会社ディスコ | レーザー加工装置 |
JP5431989B2 (ja) * | 2010-01-29 | 2014-03-05 | 株式会社ディスコ | レーザー加工装置 |
JP5995428B2 (ja) * | 2011-11-11 | 2016-09-21 | 株式会社ディスコ | カバー付きチップの製造方法 |
US8871613B2 (en) * | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
-
2014
- 2014-04-11 JP JP2014081541A patent/JP6234312B2/ja active Active
-
2015
- 2015-03-09 TW TW104107423A patent/TWI640038B/zh active
- 2015-03-25 KR KR1020150041316A patent/KR102256562B1/ko active IP Right Grant
- 2015-04-07 CN CN201510161839.8A patent/CN104979183B/zh active Active
- 2015-04-08 PH PH12015000103A patent/PH12015000103B1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005142398A (ja) * | 2003-11-07 | 2005-06-02 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
US20060189099A1 (en) * | 2005-02-18 | 2006-08-24 | Lu Szu W | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
JP2007294729A (ja) * | 2006-04-26 | 2007-11-08 | Fujikura Ltd | 半導体パッケージの製造方法 |
US20080277806A1 (en) * | 2007-05-08 | 2008-11-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
JP2010238911A (ja) * | 2009-03-31 | 2010-10-21 | Toppan Printing Co Ltd | Icチップ及びその製造方法 |
JP2011146552A (ja) * | 2010-01-15 | 2011-07-28 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104979183B (zh) | 2019-06-14 |
JP6234312B2 (ja) | 2017-11-22 |
TW201546890A (zh) | 2015-12-16 |
KR102256562B1 (ko) | 2021-05-25 |
CN104979183A (zh) | 2015-10-14 |
PH12015000103A1 (en) | 2016-10-17 |
TWI640038B (zh) | 2018-11-01 |
PH12015000103B1 (en) | 2016-10-17 |
KR20150118024A (ko) | 2015-10-21 |
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