KR102256562B1 - 적층 기판의 가공 방법 - Google Patents
적층 기판의 가공 방법 Download PDFInfo
- Publication number
- KR102256562B1 KR102256562B1 KR1020150041316A KR20150041316A KR102256562B1 KR 102256562 B1 KR102256562 B1 KR 102256562B1 KR 1020150041316 A KR1020150041316 A KR 1020150041316A KR 20150041316 A KR20150041316 A KR 20150041316A KR 102256562 B1 KR102256562 B1 KR 102256562B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- cutting
- laser processing
- laminated substrate
- street
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000003754 machining Methods 0.000 title 1
- 238000005520 cutting process Methods 0.000 claims abstract description 53
- 239000012790 adhesive layer Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Laser Beam Processing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014081541A JP6234312B2 (ja) | 2014-04-11 | 2014-04-11 | 積層基板の加工方法 |
JPJP-P-2014-081541 | 2014-04-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20150118024A KR20150118024A (ko) | 2015-10-21 |
KR102256562B1 true KR102256562B1 (ko) | 2021-05-25 |
Family
ID=54275584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020150041316A KR102256562B1 (ko) | 2014-04-11 | 2015-03-25 | 적층 기판의 가공 방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6234312B2 (ja) |
KR (1) | KR102256562B1 (ja) |
CN (1) | CN104979183B (ja) |
PH (1) | PH12015000103B1 (ja) |
TW (1) | TWI640038B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6890885B2 (ja) * | 2017-04-04 | 2021-06-18 | 株式会社ディスコ | 加工方法 |
JP7062449B2 (ja) * | 2018-01-23 | 2022-05-06 | 株式会社ディスコ | 被加工物の切削方法 |
US11081392B2 (en) | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
KR102152007B1 (ko) * | 2020-03-18 | 2020-09-04 | 주식회사 탑 엔지니어링 | 기판 절단 방법 및 기판 절단 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064231A (ja) * | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
JP2005142398A (ja) | 2003-11-07 | 2005-06-02 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
JP2007165789A (ja) * | 2005-12-16 | 2007-06-28 | Olympus Corp | 半導体装置の製造方法 |
JP2009021476A (ja) | 2007-07-13 | 2009-01-29 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208954A (ja) * | 1989-02-08 | 1990-08-20 | Fujitsu Ltd | 半導体装置の製造方法 |
US6838299B2 (en) * | 2001-11-28 | 2005-01-04 | Intel Corporation | Forming defect prevention trenches in dicing streets |
JP4509820B2 (ja) | 2005-02-15 | 2010-07-21 | 東京エレクトロン株式会社 | 熱処理板の温度設定方法,熱処理板の温度設定装置,プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体 |
US7265034B2 (en) * | 2005-02-18 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting integrated circuit chips from wafer by ablating with laser and cutting with saw blade |
JP2007294729A (ja) * | 2006-04-26 | 2007-11-08 | Fujikura Ltd | 半導体パッケージの製造方法 |
US8629532B2 (en) * | 2007-05-08 | 2014-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with assisting dicing structure and dicing method thereof |
JP2008307646A (ja) | 2007-06-15 | 2008-12-25 | Disco Abrasive Syst Ltd | 切削装置 |
JP5536344B2 (ja) * | 2009-01-09 | 2014-07-02 | 株式会社ディスコ | レーザー加工装置 |
JP5381240B2 (ja) * | 2009-03-31 | 2014-01-08 | 凸版印刷株式会社 | Icチップ及びその製造方法 |
JP2011146552A (ja) * | 2010-01-15 | 2011-07-28 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
JP5431989B2 (ja) * | 2010-01-29 | 2014-03-05 | 株式会社ディスコ | レーザー加工装置 |
JP5995428B2 (ja) * | 2011-11-11 | 2016-09-21 | 株式会社ディスコ | カバー付きチップの製造方法 |
US8871613B2 (en) * | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
-
2014
- 2014-04-11 JP JP2014081541A patent/JP6234312B2/ja active Active
-
2015
- 2015-03-09 TW TW104107423A patent/TWI640038B/zh active
- 2015-03-25 KR KR1020150041316A patent/KR102256562B1/ko active IP Right Grant
- 2015-04-07 CN CN201510161839.8A patent/CN104979183B/zh active Active
- 2015-04-08 PH PH12015000103A patent/PH12015000103B1/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064231A (ja) * | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
JP2005142398A (ja) | 2003-11-07 | 2005-06-02 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
JP2007165789A (ja) * | 2005-12-16 | 2007-06-28 | Olympus Corp | 半導体装置の製造方法 |
JP2009021476A (ja) | 2007-07-13 | 2009-01-29 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2015204314A (ja) | 2015-11-16 |
JP6234312B2 (ja) | 2017-11-22 |
TW201546890A (zh) | 2015-12-16 |
PH12015000103A1 (en) | 2016-10-17 |
CN104979183A (zh) | 2015-10-14 |
TWI640038B (zh) | 2018-11-01 |
KR20150118024A (ko) | 2015-10-21 |
CN104979183B (zh) | 2019-06-14 |
PH12015000103B1 (en) | 2016-10-17 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
X091 | Application refused [patent] | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant |