JP2015144248A5 - - Google Patents
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- Publication number
- JP2015144248A5 JP2015144248A5 JP2014245236A JP2014245236A JP2015144248A5 JP 2015144248 A5 JP2015144248 A5 JP 2015144248A5 JP 2014245236 A JP2014245236 A JP 2014245236A JP 2014245236 A JP2014245236 A JP 2014245236A JP 2015144248 A5 JP2015144248 A5 JP 2015144248A5
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- type mos
- forming
- semiconductor layer
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000003384 imaging method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014245236A JP2015144248A (ja) | 2013-12-25 | 2014-12-03 | 半導体装置、及びその製造方法 |
| CN201480070810.2A CN105900235A (zh) | 2013-12-25 | 2014-12-22 | 半导体装置及其制造方法 |
| US15/106,996 US9786806B2 (en) | 2013-12-25 | 2014-12-22 | Semiconductor device and method for manufacturing the same |
| PCT/JP2014/006359 WO2015098073A1 (en) | 2013-12-25 | 2014-12-22 | Semiconductor device and method for manufacturing the same |
| EP14833293.5A EP3087606A1 (en) | 2013-12-25 | 2014-12-22 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013267156 | 2013-12-25 | ||
| JP2013267156 | 2013-12-25 | ||
| JP2014245236A JP2015144248A (ja) | 2013-12-25 | 2014-12-03 | 半導体装置、及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015144248A JP2015144248A (ja) | 2015-08-06 |
| JP2015144248A5 true JP2015144248A5 (enExample) | 2017-12-28 |
Family
ID=52434918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014245236A Pending JP2015144248A (ja) | 2013-12-25 | 2014-12-03 | 半導体装置、及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9786806B2 (enExample) |
| EP (1) | EP3087606A1 (enExample) |
| JP (1) | JP2015144248A (enExample) |
| CN (1) | CN105900235A (enExample) |
| WO (1) | WO2015098073A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6503093B2 (ja) * | 2015-12-31 | 2019-04-17 | ユニスト（ウルサン ナショナル インスティテュート オブ サイエンス アンド テクノロジー） | ゲートメタルをアンテナとして活用したリング状のテラヘルツ波検出用電界効果トランジスタ |
| JP6812172B2 (ja) * | 2016-08-30 | 2021-01-13 | パイオニア株式会社 | 電磁波検出装置 |
| DE102017103687B3 (de) * | 2017-02-23 | 2018-04-26 | Forschungsverbund Berlin E.V. | Strahlungsdetektor und Verfahren zu dessen Herstellung |
| JP7516009B2 (ja) * | 2019-02-20 | 2024-07-16 | キヤノン株式会社 | 発振器、撮像装置 |
| JP7516786B2 (ja) * | 2019-06-21 | 2024-07-17 | 株式会社村田製作所 | 半導体装置及びその製造方法 |
| JP7414428B2 (ja) * | 2019-08-26 | 2024-01-16 | キヤノン株式会社 | 発振器、照明装置、撮像装置および装置 |
| TWI715311B (zh) | 2019-11-26 | 2021-01-01 | 國立交通大學 | 具有寬能隙三五族汲極之金屬氧化物矽半導體場效電晶體及其製造方法 |
| CN114203641A (zh) * | 2021-12-08 | 2022-03-18 | 厦门吉顺芯微电子有限公司 | 一种cmos工艺集成肖特基器件的制程整合工艺 |
| CN114242720A (zh) * | 2021-12-13 | 2022-03-25 | 厦门市三安集成电路有限公司 | 一种氮化物器件和cmos器件集成结构及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4219523A1 (de) | 1992-06-15 | 1993-12-16 | Daimler Benz Ag | Monolithisch integrierter Millimeterwellenschaltkreis und Verfahren zu dessen Herstellung |
| JP3093620B2 (ja) * | 1995-10-19 | 2000-10-03 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2870470B2 (ja) | 1996-03-04 | 1999-03-17 | ソニー株式会社 | 受光装置の製造方法 |
| DE60322233D1 (de) * | 2002-09-19 | 2008-08-28 | Quantum Semiconductor Llc | Licht-detektierende vorrichtung |
| JP4618786B2 (ja) * | 2005-01-28 | 2011-01-26 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2007242894A (ja) * | 2006-03-08 | 2007-09-20 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2008306080A (ja) | 2007-06-11 | 2008-12-18 | Hitachi Ltd | 光センサ素子、およびこれを用いた光センサ装置、画像表示装置 |
| KR100853802B1 (ko) * | 2007-09-04 | 2008-08-25 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조방법 |
| JP5506258B2 (ja) | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
| JP6087520B2 (ja) * | 2011-07-13 | 2017-03-01 | キヤノン株式会社 | ダイオード素子及び検出素子 |
-
2014
- 2014-12-03 JP JP2014245236A patent/JP2015144248A/ja active Pending
- 2014-12-22 WO PCT/JP2014/006359 patent/WO2015098073A1/en not_active Ceased
- 2014-12-22 EP EP14833293.5A patent/EP3087606A1/en not_active Withdrawn
- 2014-12-22 CN CN201480070810.2A patent/CN105900235A/zh not_active Withdrawn
- 2014-12-22 US US15/106,996 patent/US9786806B2/en active Active
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