JP2019519121A5 - - Google Patents
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- JP2019519121A5 JP2019519121A5 JP2018567202A JP2018567202A JP2019519121A5 JP 2019519121 A5 JP2019519121 A5 JP 2019519121A5 JP 2018567202 A JP2018567202 A JP 2018567202A JP 2018567202 A JP2018567202 A JP 2018567202A JP 2019519121 A5 JP2019519121 A5 JP 2019519121A5
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- 239000000463 material Substances 0.000 claims 106
- 239000000758 substrate Substances 0.000 claims 97
- 230000004888 barrier function Effects 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 8
- 150000004767 nitrides Chemical class 0.000 claims 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 6
- 229910002704 AlGaN Inorganic materials 0.000 claims 5
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 230000005465 channeling Effects 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021069856A JP7198305B2 (ja) | 2016-06-24 | 2021-04-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2022200869A JP7547446B2 (ja) | 2016-06-24 | 2022-12-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2024146206A JP2024156010A (ja) | 2016-06-24 | 2024-08-28 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/192,545 | 2016-06-24 | ||
| US15/192,545 US11430882B2 (en) | 2016-06-24 | 2016-06-24 | Gallium nitride high-electron mobility transistors with p-type layers and process for making the same |
| US15/424,209 | 2017-02-03 | ||
| US15/424,209 US10192980B2 (en) | 2016-06-24 | 2017-02-03 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same |
| PCT/US2017/038937 WO2017223403A1 (en) | 2016-06-24 | 2017-06-23 | Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021069856A Division JP7198305B2 (ja) | 2016-06-24 | 2021-04-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019519121A JP2019519121A (ja) | 2019-07-04 |
| JP2019519121A5 true JP2019519121A5 (enExample) | 2019-08-15 |
| JP7009401B2 JP7009401B2 (ja) | 2022-01-25 |
Family
ID=60677986
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018567202A Active JP7009401B2 (ja) | 2016-06-24 | 2017-06-23 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2021069856A Active JP7198305B2 (ja) | 2016-06-24 | 2021-04-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2022200869A Active JP7547446B2 (ja) | 2016-06-24 | 2022-12-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2024146206A Pending JP2024156010A (ja) | 2016-06-24 | 2024-08-28 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021069856A Active JP7198305B2 (ja) | 2016-06-24 | 2021-04-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2022200869A Active JP7547446B2 (ja) | 2016-06-24 | 2022-12-16 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
| JP2024146206A Pending JP2024156010A (ja) | 2016-06-24 | 2024-08-28 | シリコンカーバイド基板に深く注入されたｐ－型層を有する窒化ガリウム高電子移動度トランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10192980B2 (enExample) |
| EP (1) | EP3475985A4 (enExample) |
| JP (4) | JP7009401B2 (enExample) |
| CN (2) | CN117374113A (enExample) |
| WO (1) | WO2017223403A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11430882B2 (en) | 2016-06-24 | 2022-08-30 | Wolfspeed, Inc. | Gallium nitride high-electron mobility transistors with p-type layers and process for making the same |
| US10892356B2 (en) | 2016-06-24 | 2021-01-12 | Cree, Inc. | Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same |
| US12484244B2 (en) | 2016-06-24 | 2025-11-25 | Wolfspeed, Inc. | Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same |
| KR102202173B1 (ko) * | 2017-04-28 | 2021-01-12 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
| KR20210119511A (ko) * | 2019-01-28 | 2021-10-05 | 크리 인코포레이티드 | 매립된 p형 층을 갖는 3족 질화물 고전자 이동도 트랜지스터 및 이를 제조하기 위한 공정 |
| WO2022173571A1 (en) * | 2021-02-10 | 2022-08-18 | Wolfspeed, Inc. | Group iii-nitride high-electron mobility transistors and process for making the same |
| CN113113469B (zh) * | 2021-03-10 | 2023-08-29 | 华南师范大学 | 一种高耐压双栅极横向hemt器件及其制备方法 |
| US12402346B2 (en) | 2021-05-17 | 2025-08-26 | Wolfspeed, Inc. | Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof |
| US11929428B2 (en) | 2021-05-17 | 2024-03-12 | Wolfspeed, Inc. | Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same |
| US20220367697A1 (en) | 2021-05-17 | 2022-11-17 | Cree, Inc. | Group iii-nitride transistors with back barrier structures and buried p-type layers and methods thereof |
| US12402348B2 (en) | 2021-05-20 | 2025-08-26 | Wolfspeed, Inc. | Field effect transistor with selective channel layer doping |
| CN117882195A (zh) * | 2021-08-24 | 2024-04-12 | 三菱电机株式会社 | 半导体装置 |
| US12218202B2 (en) * | 2021-09-16 | 2025-02-04 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270462A (ja) * | 1997-03-27 | 1998-10-09 | Nec Corp | 電界効果トランジスタ |
| JP3708810B2 (ja) | 2000-09-01 | 2005-10-19 | シャープ株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置 |
| US7138291B2 (en) | 2003-01-30 | 2006-11-21 | Cree, Inc. | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
| US6956239B2 (en) | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
| US8089097B2 (en) | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
| EP1665358B1 (en) | 2003-09-09 | 2020-07-01 | The Regents of The University of California | Fabrication of single or multiple gate field plates |
| KR20070093055A (ko) | 2004-10-17 | 2007-09-17 | 이페2하 아게 | 광원 및 광원의 제조 방법 |
| US7326962B2 (en) | 2004-12-15 | 2008-02-05 | Cree, Inc. | Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same |
| US7566918B2 (en) * | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
| US8049272B2 (en) | 2006-06-16 | 2011-11-01 | Cree, Inc. | Transistors having implanted channel layers and methods of fabricating the same |
| US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
| JP5319084B2 (ja) * | 2007-06-19 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20090120924A1 (en) | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| EP2502274B1 (en) | 2009-11-19 | 2019-07-31 | NXP USA, Inc. | Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device |
| US8492773B2 (en) | 2010-04-23 | 2013-07-23 | Intersil Americas Inc. | Power devices with integrated protection devices: structures and methods |
| JP5558196B2 (ja) * | 2010-05-07 | 2014-07-23 | トヨタ自動車株式会社 | Ｈｆｅｔ |
| JP4880052B2 (ja) * | 2010-05-11 | 2012-02-22 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
| KR20120027988A (ko) | 2010-09-14 | 2012-03-22 | 삼성엘이디 주식회사 | 질화갈륨계 반도체소자 및 그 제조방법 |
| US9607876B2 (en) | 2010-12-15 | 2017-03-28 | Efficient Power Conversion Corporation | Semiconductor devices with back surface isolation |
| JP5758132B2 (ja) * | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
| JP5684043B2 (ja) | 2011-05-12 | 2015-03-11 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
| US9024356B2 (en) | 2011-12-20 | 2015-05-05 | Infineon Technologies Austria Ag | Compound semiconductor device with buried field plate |
| US8890211B1 (en) * | 2011-12-22 | 2014-11-18 | Lockheed Martin Corporation | AC-driven high electron mobility transistor devices |
| US20130221320A1 (en) | 2012-02-27 | 2013-08-29 | Tsmc Solid State Lighting Ltd. | Led with embedded doped current blocking layer |
| US9337332B2 (en) | 2012-04-25 | 2016-05-10 | Hrl Laboratories, Llc | III-Nitride insulating-gate transistors with passivation |
| TW201417149A (zh) | 2012-10-31 | 2014-05-01 | Lg Innotek Co Ltd | 磊晶晶圓 |
| KR20140110616A (ko) | 2013-03-08 | 2014-09-17 | 삼성전자주식회사 | 고 전자이동도 트랜지스터 소자 |
| US8759879B1 (en) | 2013-05-03 | 2014-06-24 | Texas Instruments Incorporated | RESURF III-nitride HEMTs |
| JP6107435B2 (ja) * | 2013-06-04 | 2017-04-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US9443969B2 (en) * | 2013-07-23 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having metal diffusion barrier |
| US9768259B2 (en) * | 2013-07-26 | 2017-09-19 | Cree, Inc. | Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling |
| US10867792B2 (en) * | 2014-02-18 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same |
| US9728630B2 (en) | 2014-09-05 | 2017-08-08 | Infineon Technologies Austria Ag | High-electron-mobility transistor having a buried field plate |
| US9583607B2 (en) | 2015-07-17 | 2017-02-28 | Mitsubishi Electric Research Laboratories, Inc. | Semiconductor device with multiple-functional barrier layer |
-
2017
- 2017-02-03 US US15/424,209 patent/US10192980B2/en active Active
- 2017-06-23 JP JP2018567202A patent/JP7009401B2/ja active Active
- 2017-06-23 WO PCT/US2017/038937 patent/WO2017223403A1/en not_active Ceased
- 2017-06-23 EP EP17816265.7A patent/EP3475985A4/en active Pending
- 2017-06-23 CN CN202311351913.3A patent/CN117374113A/zh active Pending
- 2017-06-23 CN CN201780045145.5A patent/CN109564940A/zh active Pending
-
2021
- 2021-04-16 JP JP2021069856A patent/JP7198305B2/ja active Active
-
2022
- 2022-12-16 JP JP2022200869A patent/JP7547446B2/ja active Active
-
2024
- 2024-08-28 JP JP2024146206A patent/JP2024156010A/ja active Pending
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