CN109564940A - 在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管 - Google Patents

在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管 Download PDF

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Publication number
CN109564940A
CN109564940A CN201780045145.5A CN201780045145A CN109564940A CN 109564940 A CN109564940 A CN 109564940A CN 201780045145 A CN201780045145 A CN 201780045145A CN 109564940 A CN109564940 A CN 109564940A
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Chinese (zh)
Inventor
萨普撒里希·斯里拉姆
亚历山大·苏沃罗夫
克里斯特·哈林
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Wolfspeed Inc
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Cree Inc
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Priority claimed from US15/192,545 external-priority patent/US11430882B2/en
Application filed by Cree Inc filed Critical Cree Inc
Priority to CN202311351913.3A priority Critical patent/CN117374113A/zh
Publication of CN109564940A publication Critical patent/CN109564940A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H10P30/206—
    • H10P30/21—
    • H10P95/408—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
CN201780045145.5A 2016-06-24 2017-06-23 在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管 Pending CN109564940A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311351913.3A CN117374113A (zh) 2016-06-24 2017-06-23 在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/192,545 US11430882B2 (en) 2016-06-24 2016-06-24 Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
US15/192,545 2016-06-24
US15/424,209 2017-02-03
US15/424,209 US10192980B2 (en) 2016-06-24 2017-02-03 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
PCT/US2017/038937 WO2017223403A1 (en) 2016-06-24 2017-06-23 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates

Related Child Applications (1)

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CN202311351913.3A Division CN117374113A (zh) 2016-06-24 2017-06-23 在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管

Publications (1)

Publication Number Publication Date
CN109564940A true CN109564940A (zh) 2019-04-02

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CN202311351913.3A Pending CN117374113A (zh) 2016-06-24 2017-06-23 在碳化硅基底中具有深植入p型层的氮化镓高电子迁移率晶体管

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Country Status (5)

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US (1) US10192980B2 (enExample)
EP (1) EP3475985A4 (enExample)
JP (4) JP7009401B2 (enExample)
CN (2) CN109564940A (enExample)
WO (1) WO2017223403A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023041688A (ja) * 2019-01-28 2023-03-24 ウルフスピード インコーポレイテッド 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US12477770B2 (en) 2016-06-24 2025-11-18 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11430882B2 (en) 2016-06-24 2022-08-30 Wolfspeed, Inc. Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
DE112017007491B4 (de) * 2017-04-28 2023-04-27 Mitsubishi Electric Corporation Halbleitervorrichtung
WO2022173571A1 (en) * 2021-02-10 2022-08-18 Wolfspeed, Inc. Group iii-nitride high-electron mobility transistors and process for making the same
CN113113469B (zh) * 2021-03-10 2023-08-29 华南师范大学 一种高耐压双栅极横向hemt器件及其制备方法
US20220367697A1 (en) * 2021-05-17 2022-11-17 Cree, Inc. Group iii-nitride transistors with back barrier structures and buried p-type layers and methods thereof
US11929428B2 (en) 2021-05-17 2024-03-12 Wolfspeed, Inc. Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US12402348B2 (en) * 2021-05-20 2025-08-26 Wolfspeed, Inc. Field effect transistor with selective channel layer doping
WO2023026362A1 (ja) * 2021-08-24 2023-03-02 三菱電機株式会社 半導体装置
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1717811A (zh) * 2002-11-26 2006-01-04 克里公司 源极区下面具有隐埋p型层的晶体管及其制造方法
CN102623493A (zh) * 2011-01-26 2012-08-01 株式会社东芝 半导体元件
CN103329256A (zh) * 2010-12-15 2013-09-25 宜普电源转换公司 具有后表面隔离的半导体装置
US8890211B1 (en) * 2011-12-22 2014-11-18 Lockheed Martin Corporation AC-driven high electron mobility transistor devices
US20150028350A1 (en) * 2013-07-26 2015-01-29 Cree, Inc. Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10270462A (ja) * 1997-03-27 1998-10-09 Nec Corp 電界効果トランジスタ
JP3708810B2 (ja) * 2000-09-01 2005-10-19 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US7138291B2 (en) 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US8089097B2 (en) 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
TWI560783B (en) 2003-09-09 2016-12-01 Univ California Fabrication of single or multiple gate field plates
WO2006042518A1 (de) 2004-10-17 2006-04-27 Ip2H Ag Lichtquelle und ein verfahren zur herstellung einer lichtquelle
US7326962B2 (en) 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US7566918B2 (en) * 2006-02-23 2009-07-28 Cree, Inc. Nitride based transistors for millimeter wave operation
US8049272B2 (en) 2006-06-16 2011-11-01 Cree, Inc. Transistors having implanted channel layers and methods of fabricating the same
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
JP5319084B2 (ja) * 2007-06-19 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
US20090120924A1 (en) 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
US9825162B2 (en) 2009-11-19 2017-11-21 Nxp Usa, Inc. Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device
US8637360B2 (en) * 2010-04-23 2014-01-28 Intersil Americas Inc. Power devices with integrated protection devices: structures and methods
JP5558196B2 (ja) * 2010-05-07 2014-07-23 トヨタ自動車株式会社 Ｈｆｅｔ
JP4880052B2 (ja) * 2010-05-11 2012-02-22 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
KR20120027988A (ko) 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
JP5684043B2 (ja) * 2011-05-12 2015-03-11 株式会社豊田中央研究所 半導体装置とその製造方法
US9024356B2 (en) 2011-12-20 2015-05-05 Infineon Technologies Austria Ag Compound semiconductor device with buried field plate
US20130221320A1 (en) 2012-02-27 2013-08-29 Tsmc Solid State Lighting Ltd. Led with embedded doped current blocking layer
US9337332B2 (en) 2012-04-25 2016-05-10 Hrl Laboratories, Llc III-Nitride insulating-gate transistors with passivation
TW201417149A (zh) 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 磊晶晶圓
KR20140110616A (ko) 2013-03-08 2014-09-17 삼성전자주식회사 고 전자이동도 트랜지스터 소자
US8759879B1 (en) 2013-05-03 2014-06-24 Texas Instruments Incorporated RESURF III-nitride HEMTs
JP6107435B2 (ja) * 2013-06-04 2017-04-05 三菱電機株式会社 半導体装置及びその製造方法
US9443969B2 (en) * 2013-07-23 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having metal diffusion barrier
US10867792B2 (en) * 2014-02-18 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
US9728630B2 (en) 2014-09-05 2017-08-08 Infineon Technologies Austria Ag High-electron-mobility transistor having a buried field plate
US9583607B2 (en) 2015-07-17 2017-02-28 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple-functional barrier layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1717811A (zh) * 2002-11-26 2006-01-04 克里公司 源极区下面具有隐埋p型层的晶体管及其制造方法
CN103329256A (zh) * 2010-12-15 2013-09-25 宜普电源转换公司 具有后表面隔离的半导体装置
CN102623493A (zh) * 2011-01-26 2012-08-01 株式会社东芝 半导体元件
US8890211B1 (en) * 2011-12-22 2014-11-18 Lockheed Martin Corporation AC-driven high electron mobility transistor devices
US20150028350A1 (en) * 2013-07-26 2015-01-29 Cree, Inc. Controlled Ion Implantation Into Silicon Carbide Using Channeling And Devices Fabricated Using Controlled Ion Implantation Into Silicon Carbide Using Channeling

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12477770B2 (en) 2016-06-24 2025-11-18 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US12484244B2 (en) 2016-06-24 2025-11-25 Wolfspeed, Inc. Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
JP2023041688A (ja) * 2019-01-28 2023-03-24 ウルフスピード インコーポレイテッド 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス
JP7543452B2 (ja) 2019-01-28 2024-09-02 ウルフスピード インコーポレイテッド 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス
US12402346B2 (en) 2021-05-17 2025-08-26 Wolfspeed, Inc. Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof

Also Published As

Publication number Publication date
EP3475985A1 (en) 2019-05-01
JP7547446B2 (ja) 2024-09-09
JP2021108395A (ja) 2021-07-29
JP2024156010A (ja) 2024-10-31
WO2017223403A1 (en) 2017-12-28
JP7198305B2 (ja) 2022-12-28
US20170373178A1 (en) 2017-12-28
JP7009401B2 (ja) 2022-01-25
EP3475985A4 (en) 2020-02-26
CN117374113A (zh) 2024-01-09
JP2023029379A (ja) 2023-03-03
US10192980B2 (en) 2019-01-29
JP2019519121A (ja) 2019-07-04

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