JP2015109437A5 - - Google Patents

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Publication number
JP2015109437A5
JP2015109437A5 JP2014216232A JP2014216232A JP2015109437A5 JP 2015109437 A5 JP2015109437 A5 JP 2015109437A5 JP 2014216232 A JP2014216232 A JP 2014216232A JP 2014216232 A JP2014216232 A JP 2014216232A JP 2015109437 A5 JP2015109437 A5 JP 2015109437A5
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JP
Japan
Prior art keywords
curing agent
molecular weight
polishing
isocyanate
amine
Prior art date
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JP2014216232A
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English (en)
Japanese (ja)
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JP2015109437A (ja
JP6463618B2 (ja
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Priority claimed from US14/062,060 external-priority patent/US8980749B1/en
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Publication of JP2015109437A publication Critical patent/JP2015109437A/ja
Publication of JP2015109437A5 publication Critical patent/JP2015109437A5/ja
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Publication of JP6463618B2 publication Critical patent/JP6463618B2/ja
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JP2014216232A 2013-10-24 2014-10-23 シリコンウェーハを化学機械研磨する方法 Active JP6463618B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/062,060 US8980749B1 (en) 2013-10-24 2013-10-24 Method for chemical mechanical polishing silicon wafers
US14/062,060 2013-10-24

Publications (3)

Publication Number Publication Date
JP2015109437A JP2015109437A (ja) 2015-06-11
JP2015109437A5 true JP2015109437A5 (enExample) 2017-11-24
JP6463618B2 JP6463618B2 (ja) 2019-02-06

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ID=52632216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014216232A Active JP6463618B2 (ja) 2013-10-24 2014-10-23 シリコンウェーハを化学機械研磨する方法

Country Status (8)

Country Link
US (1) US8980749B1 (enExample)
JP (1) JP6463618B2 (enExample)
KR (1) KR102359116B1 (enExample)
CN (1) CN104551977B (enExample)
DE (1) DE102014015664A1 (enExample)
MY (1) MY172804A (enExample)
SG (1) SG10201406877WA (enExample)
TW (1) TWI621166B (enExample)

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US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
JP6697931B2 (ja) * 2016-04-01 2020-05-27 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法及び研磨方法
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP7113626B2 (ja) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 研磨パッド
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
CN110528287B (zh) * 2019-08-08 2022-03-08 安徽安利材料科技股份有限公司 一种毛刷式高耐用化学机械抛光聚氨酯材料及其制备方法
CN110977756B (zh) * 2019-12-27 2021-09-07 万华化学集团电子材料有限公司 一种化学机械抛光垫的抛光层及其应用
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113214741B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高稳定的cmp抛光液
CN118456278B (zh) * 2024-07-10 2024-12-03 万华化学集团电子材料有限公司 终点检测窗口、化学机械抛光垫及其应用

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JPH05283515A (ja) 1992-03-31 1993-10-29 Nec Kansai Ltd 半導体装置製造方法
JP3055471B2 (ja) 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
JPH11277408A (ja) 1998-01-29 1999-10-12 Shin Etsu Handotai Co Ltd 半導体ウエーハの鏡面研磨用研磨布、鏡面研磨方法ならびに鏡面研磨装置
GB2334205B (en) 1998-02-12 2001-11-28 Shinetsu Handotai Kk Polishing method for semiconductor wafer and polishing pad used therein
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JP2002292556A (ja) 2001-03-29 2002-10-08 Sumitomo Osaka Cement Co Ltd シリコンウエハ鏡面研磨用スラリー、砥石、パッド及び研磨液、並びにこれらを用いたシリコンウエハの鏡面研磨方法
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US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
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KR100709392B1 (ko) * 2005-07-20 2007-04-20 에스케이씨 주식회사 액상의 비닐계 모노머가 상호침투 가교된 형태를 갖는폴리우레탄 연마 패드
JP5019417B2 (ja) * 2006-06-22 2012-09-05 東洋ゴム工業株式会社 研磨パッドの製造方法及び研磨パッド
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
JP4986129B2 (ja) * 2007-01-15 2012-07-25 東洋ゴム工業株式会社 研磨パッド
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JP5484145B2 (ja) * 2010-03-24 2014-05-07 東洋ゴム工業株式会社 研磨パッド
JP5534907B2 (ja) * 2010-03-31 2014-07-02 富士紡ホールディングス株式会社 研磨パッドおよび研磨パッドの製造方法
CN102310366B (zh) * 2010-07-08 2014-03-05 罗门哈斯电子材料Cmp控股股份有限公司 具有低缺陷整体窗的化学机械抛光垫
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JPWO2013011921A1 (ja) * 2011-07-15 2015-02-23 東レ株式会社 研磨パッド
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad

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