DE102014015664A1 - Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern - Google Patents

Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern Download PDF

Info

Publication number
DE102014015664A1
DE102014015664A1 DE201410015664 DE102014015664A DE102014015664A1 DE 102014015664 A1 DE102014015664 A1 DE 102014015664A1 DE 201410015664 DE201410015664 DE 201410015664 DE 102014015664 A DE102014015664 A DE 102014015664A DE 102014015664 A1 DE102014015664 A1 DE 102014015664A1
Authority
DE
Germany
Prior art keywords
polishing
curing agent
silicon wafer
molecular weight
polishing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201410015664
Other languages
German (de)
English (en)
Inventor
Marty W. Degroot
Yasuyuki ltai
Bainian Qian
Hiroyuki Nakano
David B. James
Naoko Kawai
Katsumasa Kawabata
Koichi Yoshida
Kazutaka Miyamoto
James Murnane
Fengji Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitta DuPont Inc
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Nitta Haas Inc
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc, Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Nitta Haas Inc
Publication of DE102014015664A1 publication Critical patent/DE102014015664A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polyurethanes Or Polyureas (AREA)
DE201410015664 2013-10-24 2014-10-23 Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern Withdrawn DE102014015664A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/062,060 US8980749B1 (en) 2013-10-24 2013-10-24 Method for chemical mechanical polishing silicon wafers
US14/062,060 2013-10-24

Publications (1)

Publication Number Publication Date
DE102014015664A1 true DE102014015664A1 (de) 2015-04-30

Family

ID=52632216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201410015664 Withdrawn DE102014015664A1 (de) 2013-10-24 2014-10-23 Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern

Country Status (8)

Country Link
US (1) US8980749B1 (enExample)
JP (1) JP6463618B2 (enExample)
KR (1) KR102359116B1 (enExample)
CN (1) CN104551977B (enExample)
DE (1) DE102014015664A1 (enExample)
MY (1) MY172804A (enExample)
SG (1) SG10201406877WA (enExample)
TW (1) TWI621166B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
JP6940495B2 (ja) 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
JP6697931B2 (ja) * 2016-04-01 2020-05-27 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法及び研磨方法
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP7113626B2 (ja) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 研磨パッド
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
CN110528287B (zh) * 2019-08-08 2022-03-08 安徽安利材料科技股份有限公司 一种毛刷式高耐用化学机械抛光聚氨酯材料及其制备方法
CN110977756B (zh) * 2019-12-27 2021-09-07 万华化学集团电子材料有限公司 一种化学机械抛光垫的抛光层及其应用
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113214741B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高稳定的cmp抛光液
CN118456278B (zh) * 2024-07-10 2024-12-03 万华化学集团电子材料有限公司 终点检测窗口、化学机械抛光垫及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7897250B2 (en) 2007-10-03 2011-03-01 Fujibo Holdings Inc. Polishing pad

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283515A (ja) 1992-03-31 1993-10-29 Nec Kansai Ltd 半導体装置製造方法
JP3055471B2 (ja) 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
JPH11277408A (ja) 1998-01-29 1999-10-12 Shin Etsu Handotai Co Ltd 半導体ウエーハの鏡面研磨用研磨布、鏡面研磨方法ならびに鏡面研磨装置
GB2334205B (en) 1998-02-12 2001-11-28 Shinetsu Handotai Kk Polishing method for semiconductor wafer and polishing pad used therein
DE60038948D1 (de) 1999-08-31 2008-07-03 Shinetsu Handotai Kk Verfahren und vorrichtung zum polieren von halbleiterscheiben
US6189546B1 (en) 1999-12-29 2001-02-20 Memc Electronic Materials, Inc. Polishing process for manufacturing dopant-striation-free polished silicon wafers
JP2002292556A (ja) 2001-03-29 2002-10-08 Sumitomo Osaka Cement Co Ltd シリコンウエハ鏡面研磨用スラリー、砥石、パッド及び研磨液、並びにこれらを用いたシリコンウエハの鏡面研磨方法
JP2003037089A (ja) * 2001-07-26 2003-02-07 Shin Etsu Handotai Co Ltd ウェーハの研磨方法
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
KR100709392B1 (ko) * 2005-07-20 2007-04-20 에스케이씨 주식회사 액상의 비닐계 모노머가 상호침투 가교된 형태를 갖는폴리우레탄 연마 패드
JP5019417B2 (ja) * 2006-06-22 2012-09-05 東洋ゴム工業株式会社 研磨パッドの製造方法及び研磨パッド
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
MY157714A (en) * 2007-01-15 2016-07-15 Rohm & Haas Elect Mat Polishing pad and a method for manufacturing the same
JP4986129B2 (ja) * 2007-01-15 2012-07-25 東洋ゴム工業株式会社 研磨パッド
JP5484145B2 (ja) * 2010-03-24 2014-05-07 東洋ゴム工業株式会社 研磨パッド
JP5534907B2 (ja) * 2010-03-31 2014-07-02 富士紡ホールディングス株式会社 研磨パッドおよび研磨パッドの製造方法
CN102310366B (zh) * 2010-07-08 2014-03-05 罗门哈斯电子材料Cmp控股股份有限公司 具有低缺陷整体窗的化学机械抛光垫
US20120264303A1 (en) 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
WO2013011921A1 (ja) * 2011-07-15 2013-01-24 東レ株式会社 研磨パッド
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7897250B2 (en) 2007-10-03 2011-03-01 Fujibo Holdings Inc. Polishing pad

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ASTM D1622
ASTM D2240
ASTM D412
ASTM-Testverfahren D4274-11

Also Published As

Publication number Publication date
JP6463618B2 (ja) 2019-02-06
TWI621166B (zh) 2018-04-11
CN104551977B (zh) 2018-01-09
KR20150047444A (ko) 2015-05-04
US8980749B1 (en) 2015-03-17
CN104551977A (zh) 2015-04-29
JP2015109437A (ja) 2015-06-11
KR102359116B1 (ko) 2022-02-08
TW201535496A (zh) 2015-09-16
SG10201406877WA (en) 2015-05-28
MY172804A (en) 2019-12-12

Similar Documents

Publication Publication Date Title
DE102014015664A1 (de) Verfahren zum chemisch-mechanischen Polieren von Siliziumwafern
DE102013018258A1 (de) Weiches und konditionierbares chemisch-mechanisches Polierkissen
DE102015006980A1 (de) Chemisch-Mechanisches Polierverfahren
DE102015007033A1 (de) Chemisch-mechanische Polierschichtformulierung mit Konditionierungstoleranz
DE102015003240A1 (de) Chemisch-mechanisches polierkissen mit polierschicht und fenster
DE102007024460B4 (de) Chemisch-mechanisches Polierkissen
DE102014007027A1 (de) Weiches und konditionierbares chemisch-mechanisches Fensterpolierkissen
DE102014007002A1 (de) Chemisch-mechanischer Mehrschicht-Polierkissenstapel mit weicher und konditionierbarer Polierschicht
DE102016007767A1 (de) Formulierung für eine verbundpolierschicht für ein chemisch-mechanisches polierkissen
DE102017008616A1 (de) Chemisch-mechanische Polierkissen mit hoher Planarisierungseffizienz und Verfahren zu deren Herstellung
DE102015004786A1 (de) Chemisch-mechanisches Polierkissen
DE102014007024A1 (de) Weicher und konditionierbarer chemisch-mechanischer Polierkissenstapel
DE102015009512A1 (de) Polyurethan-Polierkissen
DE102015016424A1 (de) CMP-Gießverfahren mit eingestellter Viskosität
DE102015016427A1 (de) Gießverfahren für ein CMP-Kissen mit eingestellter Expansion
DE102015004927A1 (de) Chemisch-mechanisches Polierkissen mit transparentem Endpunkterfassungsfenster
DE102007024459A1 (de) Chemisch-mechanisches Polierkissen
DE102015004928A1 (de) Chemisch-mechanisches Polierkissen mit Endpunkterfassungsfenster
DE102015003200A1 (de) Weiches und konditionierbares chemisch-mechanisches polierkissen mit fenster
DE102012018523A1 (de) Chemisch-mechanische Acrylat-Polyurethan-Polierschicht
DE102016007777A1 (de) Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens
DE102018004452A1 (de) Chemisch-mechanische Polierkissen für eine verbesserte Entfernungsgeschwindigkeit und Planarisierung
DE102016012533A1 (de) Chemisch-mechanisches Polierverfahren
DE102014012353A1 (de) Chemisch-mechanisches polierkissen
DE102016007771A1 (de) Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen

Legal Events

Date Code Title Description
R083 Amendment of/additions to inventor(s)
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021304000

Ipc: H01L0021302000

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee