KR102359116B1 - 실리콘 웨이퍼의 화학적 기계적 연마 방법 - Google Patents

실리콘 웨이퍼의 화학적 기계적 연마 방법 Download PDF

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KR102359116B1
KR102359116B1 KR1020140145146A KR20140145146A KR102359116B1 KR 102359116 B1 KR102359116 B1 KR 102359116B1 KR 1020140145146 A KR1020140145146 A KR 1020140145146A KR 20140145146 A KR20140145146 A KR 20140145146A KR 102359116 B1 KR102359116 B1 KR 102359116B1
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South Korea
Prior art keywords
curing agent
polishing
silicon wafer
chemical mechanical
isocyanate
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Korean (ko)
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KR20150047444A (ko
Inventor
야스유키 이타이
바이니앤 치앤
히로유키 나카노
데이비드 비 제임스
나오코 가와이
가츠마사 가와바타
고이치 요시다
가즈타카 미야모토
제임스 머네인
펭지 예
말티 더블유 드그루트
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
니타 듀퐁 가부시키가이샤
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드, 니타 듀퐁 가부시키가이샤 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20150047444A publication Critical patent/KR20150047444A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polyurethanes Or Polyureas (AREA)
KR1020140145146A 2013-10-24 2014-10-24 실리콘 웨이퍼의 화학적 기계적 연마 방법 Active KR102359116B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/062,060 2013-10-24
US14/062,060 US8980749B1 (en) 2013-10-24 2013-10-24 Method for chemical mechanical polishing silicon wafers

Publications (2)

Publication Number Publication Date
KR20150047444A KR20150047444A (ko) 2015-05-04
KR102359116B1 true KR102359116B1 (ko) 2022-02-08

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KR1020140145146A Active KR102359116B1 (ko) 2013-10-24 2014-10-24 실리콘 웨이퍼의 화학적 기계적 연마 방법

Country Status (8)

Country Link
US (1) US8980749B1 (enExample)
JP (1) JP6463618B2 (enExample)
KR (1) KR102359116B1 (enExample)
CN (1) CN104551977B (enExample)
DE (1) DE102014015664A1 (enExample)
MY (1) MY172804A (enExample)
SG (1) SG10201406877WA (enExample)
TW (1) TWI621166B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9314897B2 (en) * 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259821B2 (en) * 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10618141B2 (en) 2015-10-30 2020-04-14 Applied Materials, Inc. Apparatus for forming a polishing article that has a desired zeta potential
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
JP6697931B2 (ja) * 2016-04-01 2020-05-27 富士紡ホールディングス株式会社 研磨パッド、研磨パッドの製造方法及び研磨方法
US20180281149A1 (en) 2017-03-31 2018-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP7113626B2 (ja) * 2018-01-12 2022-08-05 ニッタ・デュポン株式会社 研磨パッド
WO2020050932A1 (en) 2018-09-04 2020-03-12 Applied Materials, Inc. Formulations for advanced polishing pads
CN110528287B (zh) * 2019-08-08 2022-03-08 安徽安利材料科技股份有限公司 一种毛刷式高耐用化学机械抛光聚氨酯材料及其制备方法
CN110977756B (zh) * 2019-12-27 2021-09-07 万华化学集团电子材料有限公司 一种化学机械抛光垫的抛光层及其应用
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN113214741B (zh) * 2021-04-24 2022-03-11 深圳市撒比斯科技有限公司 一种高稳定的cmp抛光液
CN118456278B (zh) * 2024-07-10 2024-12-03 万华化学集团电子材料有限公司 终点检测窗口、化学机械抛光垫及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008001809A (ja) * 2006-06-22 2008-01-10 Toyo Tire & Rubber Co Ltd 研磨パッドの製造方法及び研磨パッド

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283515A (ja) 1992-03-31 1993-10-29 Nec Kansai Ltd 半導体装置製造方法
JP3055471B2 (ja) 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
JPH11277408A (ja) 1998-01-29 1999-10-12 Shin Etsu Handotai Co Ltd 半導体ウエーハの鏡面研磨用研磨布、鏡面研磨方法ならびに鏡面研磨装置
GB2334205B (en) 1998-02-12 2001-11-28 Shinetsu Handotai Kk Polishing method for semiconductor wafer and polishing pad used therein
WO2001015860A1 (en) 1999-08-31 2001-03-08 Shin-Etsu Handotai Co., Ltd. Method and device for polishing semiconductor wafer
US6189546B1 (en) 1999-12-29 2001-02-20 Memc Electronic Materials, Inc. Polishing process for manufacturing dopant-striation-free polished silicon wafers
JP2002292556A (ja) 2001-03-29 2002-10-08 Sumitomo Osaka Cement Co Ltd シリコンウエハ鏡面研磨用スラリー、砥石、パッド及び研磨液、並びにこれらを用いたシリコンウエハの鏡面研磨方法
JP2003037089A (ja) * 2001-07-26 2003-02-07 Shin Etsu Handotai Co Ltd ウェーハの研磨方法
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
KR100709392B1 (ko) * 2005-07-20 2007-04-20 에스케이씨 주식회사 액상의 비닐계 모노머가 상호침투 가교된 형태를 갖는폴리우레탄 연마 패드
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
MY157714A (en) * 2007-01-15 2016-07-15 Rohm & Haas Elect Mat Polishing pad and a method for manufacturing the same
JP4986129B2 (ja) * 2007-01-15 2012-07-25 東洋ゴム工業株式会社 研磨パッド
JP5297096B2 (ja) 2007-10-03 2013-09-25 富士紡ホールディングス株式会社 研磨布
JP5484145B2 (ja) * 2010-03-24 2014-05-07 東洋ゴム工業株式会社 研磨パッド
JP5534907B2 (ja) * 2010-03-31 2014-07-02 富士紡ホールディングス株式会社 研磨パッドおよび研磨パッドの製造方法
CN102310366B (zh) * 2010-07-08 2014-03-05 罗门哈斯电子材料Cmp控股股份有限公司 具有低缺陷整体窗的化学机械抛光垫
US20120264303A1 (en) 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
JPWO2013011921A1 (ja) * 2011-07-15 2015-02-23 東レ株式会社 研磨パッド
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008001809A (ja) * 2006-06-22 2008-01-10 Toyo Tire & Rubber Co Ltd 研磨パッドの製造方法及び研磨パッド

Also Published As

Publication number Publication date
MY172804A (en) 2019-12-12
CN104551977B (zh) 2018-01-09
KR20150047444A (ko) 2015-05-04
DE102014015664A1 (de) 2015-04-30
JP2015109437A (ja) 2015-06-11
TWI621166B (zh) 2018-04-11
SG10201406877WA (en) 2015-05-28
US8980749B1 (en) 2015-03-17
JP6463618B2 (ja) 2019-02-06
CN104551977A (zh) 2015-04-29
TW201535496A (zh) 2015-09-16

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