JP2015095482A - 半導体部品上へのマイクロバンプの作製方法 - Google Patents

半導体部品上へのマイクロバンプの作製方法 Download PDF

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JP2015095482A
JP2015095482A JP2013232359A JP2013232359A JP2015095482A JP 2015095482 A JP2015095482 A JP 2015095482A JP 2013232359 A JP2013232359 A JP 2013232359A JP 2013232359 A JP2013232359 A JP 2013232359A JP 2015095482 A JP2015095482 A JP 2015095482A
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contact
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JP2015095482A5 (enExample
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ミカエル・ドゥタル
Detalle Mikael
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Interuniversitair Microelektronica Centrum vzw IMEC
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Interuniversitair Microelektronica Centrum vzw IMEC
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Priority to JP2013232359A priority Critical patent/JP2015095482A/ja
Priority to US14/092,796 priority patent/US9263408B2/en
Publication of JP2015095482A publication Critical patent/JP2015095482A/ja
Publication of JP2015095482A5 publication Critical patent/JP2015095482A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01255Changing the shapes of bumps by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • H10W72/01951Changing the shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/237Multiple bump connectors having different shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261Functions other than electrical connecting
    • H10W72/263Providing mechanical bonding or support, e.g. dummy bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261Functions other than electrical connecting
    • H10W72/267Multiple bump connectors having different functions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/934Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/936Multiple bond pads having different shapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2013232359A 2013-11-08 2013-11-08 半導体部品上へのマイクロバンプの作製方法 Pending JP2015095482A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013232359A JP2015095482A (ja) 2013-11-08 2013-11-08 半導体部品上へのマイクロバンプの作製方法
US14/092,796 US9263408B2 (en) 2013-11-08 2013-11-27 Method for producing microbumps on a semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013232359A JP2015095482A (ja) 2013-11-08 2013-11-08 半導体部品上へのマイクロバンプの作製方法

Publications (2)

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JP2015095482A true JP2015095482A (ja) 2015-05-18
JP2015095482A5 JP2015095482A5 (enExample) 2016-12-22

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JP2013232359A Pending JP2015095482A (ja) 2013-11-08 2013-11-08 半導体部品上へのマイクロバンプの作製方法

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US (1) US9263408B2 (enExample)
JP (1) JP2015095482A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520333B1 (en) * 2015-06-22 2016-12-13 Inotera Memories, Inc. Wafer level package and fabrication method thereof
TWI599276B (zh) * 2015-06-26 2017-09-11 矽創電子股份有限公司 電子元件與製造方法
CN108206140B (zh) * 2016-12-19 2020-11-24 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置
US10566300B2 (en) * 2018-01-22 2020-02-18 Globalfoundries Inc. Bond pads with surrounding fill lines
US10834818B2 (en) * 2018-11-05 2020-11-10 Ngk Spark Plug Co., Ltd. Wiring board
US11955423B2 (en) * 2020-09-29 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11855028B2 (en) * 2021-01-21 2023-12-26 Taiwan Semiconductor Manufacturing Hybrid micro-bump integration with redistribution layer
US20250233097A1 (en) * 2022-09-02 2025-07-17 SK Hynix NAND Product Solutions Corp. (dba Solidigm) Systems and methods for reducing stress and improving surface adhesion in a die

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177136A (ja) * 1992-10-09 1994-06-24 Nippondenso Co Ltd バンプ電極をもつ回路装置
JPH07161722A (ja) * 1993-12-03 1995-06-23 Nec Corp 半導体装置のパッド構造
JP2002217225A (ja) * 2001-01-17 2002-08-02 Sanyo Electric Co Ltd バンプ電極の形成方法
JP2003318211A (ja) * 2002-04-24 2003-11-07 Sharp Corp 半導体装置
JP2008288544A (ja) * 2007-05-16 2008-11-27 Natl Semiconductor Corp <Ns> 駆動ic用の窪みのない金バンプ
JP2009302340A (ja) * 2008-06-13 2009-12-24 Nec Electronics Corp 半導体装置の製造方法

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* Cited by examiner, † Cited by third party
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TW448524B (en) 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
KR20010004529A (ko) 1999-06-29 2001-01-15 김영환 웨이퍼 레벨 패키지 및 그의 제조 방법
US6825541B2 (en) 2002-10-09 2004-11-30 Taiwan Semiconductor Manufacturing Co., Ltd Bump pad design for flip chip bumping
US8405220B1 (en) 2005-03-23 2013-03-26 Marvell International Ltd. Structures, architectures, systems, methods, algorithms and software for configuring an integrated circuit for multiple packaging types
US7767496B2 (en) * 2007-12-14 2010-08-03 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer
KR100979497B1 (ko) 2008-06-17 2010-09-01 삼성전기주식회사 웨이퍼 레벨 패키지 및 그 제조방법
KR101534682B1 (ko) 2009-03-13 2015-07-08 삼성전자주식회사 범프에 스틱을 구비하는 반도체 장치
US8405211B2 (en) 2009-05-08 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Bump pad structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177136A (ja) * 1992-10-09 1994-06-24 Nippondenso Co Ltd バンプ電極をもつ回路装置
JPH07161722A (ja) * 1993-12-03 1995-06-23 Nec Corp 半導体装置のパッド構造
JP2002217225A (ja) * 2001-01-17 2002-08-02 Sanyo Electric Co Ltd バンプ電極の形成方法
JP2003318211A (ja) * 2002-04-24 2003-11-07 Sharp Corp 半導体装置
JP2008288544A (ja) * 2007-05-16 2008-11-27 Natl Semiconductor Corp <Ns> 駆動ic用の窪みのない金バンプ
JP2009302340A (ja) * 2008-06-13 2009-12-24 Nec Electronics Corp 半導体装置の製造方法

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US9263408B2 (en) 2016-02-16

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