CN103050487A - 具有管芯以及不同尺寸的连接器的集成电路结构 - Google Patents

具有管芯以及不同尺寸的连接器的集成电路结构 Download PDF

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Publication number
CN103050487A
CN103050487A CN201210380762XA CN201210380762A CN103050487A CN 103050487 A CN103050487 A CN 103050487A CN 201210380762X A CN201210380762X A CN 201210380762XA CN 201210380762 A CN201210380762 A CN 201210380762A CN 103050487 A CN103050487 A CN 103050487A
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tube core
connector
substrate
electric connector
size
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CN103050487B (zh
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郑心圃
余振华
林俊成
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开的一个实施例是包括衬底，第一管芯和第二管芯的结构。该衬底具有第一表面。第一管芯通过多个第一电连接器连接于衬底的第一表面。第二管芯通过多个第二电连接器连接于衬底的第一表面。第二电连接器中之一的尺寸小于第一电连接器中之一的尺寸。本发明还公开了一种具有管芯以及不同尺寸的连接器的集成电路结构。

Description

具有管芯以及不同尺寸的连接器的集成电路结构
技术领域
本发明涉及半导体技术领域，更具体地，涉及具有管芯以及不同尺寸的连接器的集成电路结构。
背景技术
随着集成电路(IC)的发展，由于各种电子元件(即，晶体管、二极管、电阻器、电容器等)的集成密度不断改进，半导体产业已经经历了持续的快速增长。这些集成密度的改进大多来自于对最小部件尺寸的一再减小，从而允许更多的元件集成到给定的区域中。
这些集成的改进从本质上来说在特性上是二维(2D)的，因为被集成元件所占用的区域基本上在半导体晶圆的表面上。已开发出来的各种技术都试图将额外的维度吸收到IC结构中去。
一种技术也被称为二维半(2.5D)结构。这些结构一般具有内插器，内插器具有堆叠在其上的管芯。内插器已被用于将球接触面积从芯片中的球接触面积重新分配到内插器的更大面积内。进一步地，内插器也实现了包括多个芯片的封装。
其他技术在三维(3D)结构中堆叠芯片。这允许实现更好的功能性并且减小结构的占位面积。
发明内容
为了解决现有技术中所存在的问题，根据本发明的一个方面，提供了一种结构，包括：
衬底，所述衬底具有第一表面；
第一管芯，所述第一管芯通过第一电连接器连接于所述衬底的所述第一表面；以及
第二管芯，所述第二管芯通过第二电连接器连接于所述衬底的所述第一表面，所述第二电连接器中之一的尺寸小于所述第一电连接器中之一的尺寸。
在可选实施例中，所述第二电连接器中的每个均具有该所述第二连接器中之一的所述尺寸，所述第一电连接器中的每个均具有该所述第一连接中之一的所述尺寸。
在可选实施例中，该所述第二电连接器中之一的所述尺寸和该所述第一电连接器中之一的所述尺寸中的每个均是相应连接器的截面的直径，所述截面平行于所述衬底的所述第一表面。
在可选实施例中，所述第一电连接器中的各自相邻的第一电连接器之间具有第一间距，所述第二电连接器中的各自相邻的第二电连接器之间具有第二间距，所述第一间距大于所述第二间距。
在可选实施例中，所述结构还包括模塑料，所述模塑料围绕所述第一管芯和所述第二管芯以及在所述第一管芯和所述第二管芯之间。
在可选实施例中，所述第一管芯的顶面从所述模塑料暴露出来，并且所述模塑料覆盖所述第二管芯的顶面。
在可选实施例中，所述第一管芯和所述第二管芯的各自的顶面从所述模塑料暴露出来。
在可选实施例中，从所述衬底的所述第一表面到所述第一管芯的顶面的距离为第一距离，从所述衬底的所述第一表面到所述第二管芯的顶面的距离为第二距离，所述第一距离等于所述第二距离。
在可选实施例中，从所述衬底的所述第一表面到所述第一管芯的顶面的距离为第一距离，从所述衬底的所述第一表面到所述第二管芯的顶面的距离为第二距离，所述第一距离大于所述第二距离。
在可选实施例中，所述衬底是有源管芯衬底、内插器衬底或它们的组合。
根据本发明的另一个方面，还提供了一种结构，所述结构包括：
衬底，所述衬底具有表面，所述表面包括第一管芯连接区域和第二管芯连接区域；
第一管芯，所述第一管芯在所述衬底上的所述第一管芯连接区域中，所述第一管芯通过第一连接器电连接和机械连接于所述衬底，所述第一连接器中的每个均具有沿所述第一管芯连接区域的第一直径和沿第一管芯连接区域在与各自相邻的第一连接器之间的第一间距；以及
第二管芯，所述第二管芯在所述衬底上的所述第二管芯连接区域中，所述第二管芯通过第二连接器电连接和机械连接于所述衬底，所述第二连接器中的每个均具有沿所述第二管芯连接区域的第二直径和沿第二管芯连接区域在与各自相邻的第二连接器之间的第二间距，所述第一直径大于所述第二直径，并且所述第一间距大于所述第二间距。
在可选实施例中，所述结构进一步包括模塑料，所述模塑料围绕所述第一管芯和所述第二管芯以及在所述第一管芯和所述第二管芯之间。
在可选实施例中，所述第一管芯的顶面从所述模塑料暴露出来，并且所述模塑料覆盖第二管芯的顶面。
在可选实施例中，所述第一管芯和所述第二管芯的各自的顶面从所述模塑料暴露出来。
在可选实施例中，所述第一管芯的顶面和所述第二管芯的顶面不共平面。
在可选实施例中，所述第一管芯的顶面和所述第二管芯的顶面共平面。
根据本发明的又一个方面，还提供了一种形成结构的方法，所述方法包括：
将第一管芯连接于衬底的表面，所述第一管芯通过第一电连接器连接，所述第一电连接器具有第一尺寸；以及
将第二管芯连接于所述衬底的所述表面，所述第二管芯通过第二电连接器连接，所述第二电连接器具有第二尺寸，所述第一尺寸大于所述第二尺寸。
在可选实施例中，所述方法进一步包括在所述第一管芯和所述第二管芯周围施加模塑料。
在可选实施例中，所述第一管芯和所述第二管芯各自的顶面从所述模塑料暴露出来。
在可选实施例中，所述第一尺寸和所述第二尺寸中的每个均是各自电连接器的截面的直径，所述截面平行于所述衬底的表面。
附图说明
为更完整地理解本发明实施例及其优点，现将结合附图进行的以下描述作为参考，其中：
图1是根据一实施例的一个二维半集成电路(2.5DIC)结构；
图2是根据一实施例的图1的2.5DIC结构的内插器的布局图；
图3是根据一实施例的另一个2.5DIC结构；
图4是根据一实施例的又一个2.5DIC结构；
图5是根据一实施例的另一个2.5DIC结构；
图6是根据一实施例的用于2.5DIC结构的一个第一连接器；
图7A和7B是根据一实施例的用于2.5DIC结构的一个第二连接器；
图8A和8B是根据一实施例的用于2.5DIC结构的另一个第二连接器；
图9是根据一实施例的用于2.5DIC结构的一个内插器的布局图。
具体实施方式
下面，详细讨论本发明优选实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出制造和使用本发明的具体方式，而不用于限制本公开的范围。
下面将结合具体环境描述各实施例，即二维半集成电路(2.5DIC)结构。然而，其他的实施例也可以应用到三维集成电路(3DIC)结构中或应用到可以对管芯上的凸块使用不同接合精度的其他结构中。
图1示出了根据一个实施例的2.5DIC结构10。结构10包括第一管芯12和第二管芯14，第一管芯12和第二管芯14中每一个均连接于具有硅通孔(TSV)21的内插器20。内插器20连接于衬底24。第一管芯12通过第一连接器16，诸如迷你凸块或可控塌陷管芯连接(controlled collapse chipconnection，C4)凸块，连接于内插器20的顶面；第二管芯14通过第二连接器18，例如微凸块，连接于内插器20的顶面。内插器20的底面通过第三连接器22，例如C4凸块，连接于衬底24的顶面。衬底24的底面具有与之连接的第四连接器26，例如，球栅阵列(BGA)球。底部填充材料28位于第一管芯12和内插器20之间、第二管芯14和内插器20之间以及内插器20和衬底24之间。应该指出的是，内插器20也可以是用于3DIC结构的有源管芯。
在实施例中，第一管芯12可以是具有低密度输入和输出的管芯，诸如，动态随机存取存储器(DRAM)管芯、管芯的内存堆、射频信号处理管芯或类似管芯。在实施例中，第二管芯14可以具有高密度输入或输出，诸如，图形处理单元(GPU)管芯，逻辑器件管芯等。
在本实施例中，第一连接器16的尺寸和间距分别大于第二连接器18的大小和间距。图2示出了内插器20的布局30，作为第一连接器16和第二连接器18的尺寸和间距的一个实例。布局30包括第一管芯12的第一管芯区域32和第二管芯14的第二管芯区域36。第一管芯区域32具有第一连接器区域34，第一连接器区域34每个均具有直径D1，并且第一管芯区域32具有在两个第一连接器区域34之间的间距P1。同样地，第二管芯区域36具有第二连接器区域38，第二连接器区域38每个均具有直径D2，以及第二管芯区域36具有在两个第二连接器区域38之间的间距P2。如图所示，直径D1和间距P1分别大于直径D2和间距P2。
下表为一些实施例提供了用于图2示出的直径和间距的大约尺寸的例子。本领域普通技术人员将很容易认识到，这些尺寸可以针对不同的技术而进行修改。
表1
直径D1 直径D2
35μm-50μm 10μm-20μm
35μm-90μm 20μm-30μm
表2
直径D1 间距P1
30μm-45μm 60μm
50μm-75μm 120μm
80μm-110μm 160μm
表3
直径D2 间距P2
10μm-13μm 20μm
15μm-18μm 30μm
20μm-26μm 40μm
一般来说，第一连接器16可以具有在30μm到150μm之间的直径D1，第二连接器18可以具有在10μm到30μm之间的直径D2。更进一步地，第一连接器16可以具有大于50μm(例如等于或大于60μm)的间距P1，第二连接器18可以具有等于或小于50μm的间距P2。
第一连接器16的接合可以具有比第二连接器18的接合更大的精度窗口。例如，接合第一连接器16的接合工具可以具有在大约7μm到大约10μm之间的精度，接合第二连接器18的接合工具可以具有等于或小于大约3μm的精度。由于具有更大的精度，接合第一连接器16的成本可以在接合第二连接器18的成本的约20％到约30％之间。更进一步地，具有这些精度的接合器对于第一连接器16的生产能力可以大于对于第二连接器18的生产能力(例如，每小时2000到4000个单位比每小时500至700个单位)。
图3示出了根据一个实施例的另一个2.5DIC结构40。结构40包括图1中的结构10的元件。另外，结构40还包括用于封装第一管芯12和第二管芯14的模塑料42。在本实施例中，第一管芯12自内插器20起的高度大于第二管芯14自内插器20起的高度。在施加模塑料42(例如通过压缩模塑)并且固化该模塑料后，研磨和/或抛光模塑料(例如通过化学机械抛光(CMP)工艺)以暴露出第一管芯12的表面。由于第二管芯14的高度小于第一管芯12的高度，所以第二管芯14的表面未暴露出来。在其他的实施例中，散热材料可在第二管芯14的顶面上，该散热材料可以通过模塑料42随着第一管芯12的顶面一起暴露出来。
图4示出了根据一个实施例的另一个2.5DIC结构。该结构50与图1所示的结构10相似。用较薄的第一管芯52替代图1中的第一管芯12。自内插器20起测量的较薄的第一管芯52连同第一连接器16的高度等于自内插器20起测量的第二管芯14连同第二连接器18的的高度。因此，如图5所示的实施例，当模塑料62施加于结构60时，较薄的第一管芯52和第二管芯14各自的顶面通过模塑料62暴露出来。
图6示出的是在接合到内插器20之前，第一管芯12上的第一连接器16中的一个第一连接器72的形成。第一管芯12的衬底部分74可以是半导体衬底、介质层和/或金属层的任意组合。第一钝化层76覆盖衬底部分74。通过第一钝化层76中的开口形成钝化后互连(PPI)78。该PPI78可以在衬底部分74内电连接金属元件。第二钝化层80覆盖第一钝化层76和部分PPI78。第一凸点下金属(UBM)层82穿过第二钝化层80位于开口中以电连接PPI78。第二UBM层84覆盖第一UBM层82。第一连接器72在第二UBM层84上。
第一钝化层76形成在衬底部分74的上方。该第一钝化层76可以是聚合物，诸如，聚酰亚胺、氧化硅、氮化硅、低k电介质、超低k电介质，或类似物，或它们的组合。通过使用例如，化学气相沉积(CVD)、自旋涂层或任何合适的沉积技术形成第一钝化层76。通过使用例如，合适的光刻用掩模和蚀刻工艺可以形成穿过第一钝化层76的开口。
形成的PPI78延伸穿过在第一钝化层76中的开口。PPI78的形成首先通过合适的形成工艺(诸如，化学气相沉积或溅射)来形成晶种层(未示出)，例如钛铜合金。然后，可以形成光刻胶(未示出)从而覆盖晶种层，接着，可以对光刻胶图案化以暴露出期望PPI78将位于的那一部分晶种层。一旦光刻胶已形成并被图案化，导电材料(例如，铜)可通过沉积工艺(例如，镀层工艺)形成在晶种层上。其他合适的材料(诸如，AlCu或Au)和其他合适的形成工艺(诸如，CVD或PVD)也可以被用于形成PPI78。
一旦形成了导电材料，可以通过适当的消除工艺(例如，灰化)去除光刻胶。另外，去除光刻胶之后，可以通过例如适当的蚀刻工艺采用导电材料作为掩模除去除被光刻胶覆盖的那部分晶种层。
一旦形成了PPI78，就形成第二钝化层80。第二钝化层80可以由聚合物例如聚酰亚胺形成，也可以由例如，氮化硅、氧化硅、低k电介质、超低k电介质，或类似物，或它们的组合形成。通过去除第二钝化层80的部分来形成穿过第二钝化层80的开口，以暴露至少一部分底层PPI78。该开口可通过使用例如合适的光刻用掩模和蚀刻工艺来形成。
以与PPI78电接触的方式形成第一UBM层82，并且第二UBM层84层形成在第一UBM层82的上方。在本实施例中，第一UBM层82是钛，第二UBM层84是铜。虽然图中示出了两层，但是，UBM层可以包括不同的层数，例如，三个导电材料层，如钛层、铜层和镍层。然而，本领域普通技术人员应该认识到，可以有适于形成UBM的多种材料和层的合适的排列，诸如，铬/铬铜合金/铜/金排列、钛/钛钨/铜排列、铜/镍/金排列。任何合适的可被用于UBM的材料或材料层均包含在本发明范围内。
可以通过将第一UBM层82和第二UBM层80的每一个均形成在第二钝化层80上方以及形成在第二钝化层80中的开口来生成UBM。每一层都可以通过使用例如镀层工艺(如电化学电镀)来形成，当然，也可以使用其他形成工艺，例如，溅射、蒸发或PECVD工艺。一旦形成了所述层，可以通过一个合适的光刻用掩模工艺和蚀刻工艺去除所述层的部分以去除不需要的材料，从而使UBM成为预期的形状，诸如，圆形、八角形、方形或长方形，当然，也可选择性地形成任何期望的形状。
第一连接器72可以是接触凸块并且可以包括材料，例如，无铅焊料，或者其他合适的材料，诸如，银、锡、铜。在一个实施例中，可以通过例如，蒸发、电镀、印刷、焊料转移、球布置等方法形成锡层从而形成第一连接器72。一旦锡层形成在结构上，可以进行回焊以便将材料成型为期望的形状。
一旦第一连接器16形成在第一管芯12上，如对图6所讨论的，第一管芯12与插入器20连接，例如，通过将第一连接器16与内插器20上的焊盘连接。回焊第一连接器16以形成第一管芯12和内插器20之间的永久性连接。
图7A和7B示出了形成第二连接器18的一个实例。图7A示出了第二管芯14的衬底部分92、第一钝化层94、PPI96、第二钝化层98、第一UBM层100以及第二UBM层102。图7A进一步示出了内插器20的衬底部分112、第一钝化层114、PPI116、第二钝化层118、第一UBM层120以及第二UBM层122。图7A中的这些元件可以形成为与图6中所讨论的相应的元件相同或相似，但是对尺寸和间距有适当的修改。
在形成用于UBM的导电材料之后以及去除不需要的UBM材料之前，晶种层沉积在第二UBM层102上，例如，通过物理气相沉积(PVD)或者其他沉积方法形成的铜或铜合金。掩模形成在晶种层的上方，并且掩模具有在期望的UBM图案的上方开口。掩模可以由光阻形成例如，通过使用光刻胶将光阻图案化来形成。因此，部分晶种层通过在掩模中的开口暴露出来。
下一步，实施镀层工艺以形成在第二UBM层102上和在掩模的开口中的金属柱104。镀可以是电镀、化学镀、浸镀等。在一个实施例中，金属柱104是铜或铜合金。在其他实施例中，金属柱104可以是Sn-Ag、Sn-Ag-Cu或类似金属，并且可以是无铅或含铅的。
在本实施例中，金属柱104是铜，在金属柱104的表面上形成顶层106诸如，镍层、锡层、钯层、金层或它们的合金层，和它们的多层。然后，在掩模是光刻胶时，通过诸如灰化工艺和/或冲蚀工艺去除掩模。之前被掩模覆盖的UBM的部分(诸如，第一UBM层100和第二UBM层102的部分)也被去除，例如，通过蚀刻。
焊接材料108可以包括材料，例如无铅焊料或其他合适的材料，如银、锡、铜。在一个实施例中，可以通过例如，蒸发、电镀、印刷、焊接转移、球布置等方法形成锡层从而形成焊接材料108。一旦在结构上形成了锡层，可以进行回焊以便将材料成形为期望的形状。
形成在内插器上的金属柱124、第二UBM层122和第一UBM层120与管芯14的衬底部分92上的相应的元件相似。形成的金属柱124厚度小于金属柱104的厚度。金属柱124形成后，掩模为光刻胶时，通过诸如，灰化工艺和/或冲洗工艺将掩模去除。之前被掩模覆盖的UBM的部分，诸如，第一UBM层120和第二UBM层122的部分也被去除，例如，通过蚀刻去除。
第一UBM层120和第二UBM层122的暴露部分以及金属柱124被覆盖层126覆盖。在本实施例中，覆盖层126是无电镀镍、无电镀钯浸金(ENEPIG)。在其他实施例中，覆盖层126是无电镀镍、无电镀镍浸金(ENIG)。
在图7B中，图7A的结构也被结合在在一起，焊接材料108和覆盖层126被回焊从而形成回焊部分128。金属柱104、顶层106、回焊部分128和金属柱124形成第二连接器18中的一部分。内插器20的表面和第二管芯14的表面之间的高度H1可以在大约20μm到大约30μm之间。
图8A和8B示出了形成第二连接器18的另一个实例。图8A示出了第二管芯14的衬底部分92、第一钝化层94、PPI96、第二钝化层98、第一UBM层100、第二UBM层102、金属柱104、顶层106和焊接材料108。图8B进一步示出了内插器20的衬底部分112、第一钝化层114、PPI116、第二钝化层118、第一UBM层120、第二UBM层122、金属柱130、顶层132和焊接材料134。相应的元件以相同或相似于参考图7A对在第二管芯14的衬底部分92上的元件讨论的方式形成。
在图8B中，图8A示出的结构被结合在一起，焊接材料108和134被回焊以形成回焊部分136。金属柱104、顶层106、回焊部分136、顶层132和金属柱130形成第二连接器18中的一部分。内插器20的表面和第二管芯14的表面之间的高度H2可以在大约30μm到大约55μm之间。
一个实施例是包括衬底、第一管芯和第二管芯的结构。该衬底具有第一表面。第一管芯通过第一电连接器与衬底的第一表面连接。第二管芯通过第二电连接器与衬底的第一表面连接。第二电连接器中之一的尺寸小于第一电连接器中之一的尺寸。
另一个实施例是包括衬底、第一管芯和第二管芯的结构。该衬底具有表面，并且该表面包括第一管芯连接区域和第二管芯连接区域。第一管芯在衬底上的第一管芯连接区域中，第一管芯通过第一连接器电连接和机械连接于衬底。第一连接器每个均具有沿第一管芯连接区域的第一直径以及沿第一管芯连接区域与各自相邻的第一连接器之间的第一间距。第二管芯在衬底上的第二管芯连接区域中，第二管芯通过第二连接器电连接和机械连接于衬底。每个第二连接器具有沿第二管芯连接区域的第二直径和沿第二管芯连接区域与各自相邻的第二连接器之间的第二间距。第一直径大于第二直径，第一间距大于第二间距。
另一个实施例是用于形成一种结构的方法。该方法包括将第一管芯连接于衬底的表面，第一管芯通过第一电连接器连接，该第一电连接器具有第一尺寸；以及将第二管芯连接于衬底的表面，第二管芯通过第二电连接器连接，该第二电连接器具有第二尺寸，第一尺寸大于第二尺寸。
虽然已经详细介绍了本发明的实施例及其优点，应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。例如，虽然上述实施例讨论包括两个管芯的结构，然而实施例可以具有任何数量的管芯以及连接器连接管芯的任何组合。图9示出了这样一个实例。图9示出的是包括四个第一管芯区域32和一个第二管芯区域36的内插器布局140。
此外，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。

Claims (10)

1.一种结构，包括：
衬底，所述衬底具有第一表面；
第一管芯，所述第一管芯通过第一电连接器连接于所述衬底的所述第一表面；以及
第二管芯，所述第二管芯通过第二电连接器连接于所述衬底的所述第一表面，所述第二电连接器中之一的尺寸小于所述第一电连接器中之一的尺寸。
2.根据权利要求1所述的结构，其中所述第二电连接器中的每个均具有所述第二连接器中之一的所述尺寸，所述第一电连接器中的每个均具有所述第一连接中之一的所述尺寸。
3.根据权利要求1所述的结构，其中，所述第二电连接器中之一的所述尺寸和所述第一电连接器中之一的所述尺寸中的每个均是相应连接器的截面的直径，所述截面平行于所述衬底的所述第一表面。
4.根据权利要求1所述的结构，其中，所述第一电连接器中的各自相邻的第一电连接器之间具有第一间距，所述第二电连接器中的各自相邻的第二电连接器之间具有第二间距，所述第一间距大于所述第二间距。
5.根据权利要求1所述的结构，还包括模塑料，所述模塑料围绕所述第一管芯和所述第二管芯以及在所述第一管芯和所述第二管芯之间。
6.一种结构，包括：
衬底，所述衬底具有表面，所述表面包括第一管芯连接区域和第二管芯连接区域；
第一管芯，所述第一管芯在所述衬底上的所述第一管芯连接区域中，所述第一管芯通过第一连接器电连接和机械连接于所述衬底，所述第一连接器中的每个均具有沿所述第一管芯连接区域的第一直径和沿第一管芯连接区域与各自相邻的第一连接器之间的第一间距；以及
第二管芯，所述第二管芯在所述衬底上的所述第二管芯连接区域中，所述第二管芯通过第二连接器电连接和机械连接于所述衬底，所述第二连接器中的每个均具有沿所述第二管芯连接区域的第二直径和沿第二管芯连接区域与各自相邻的第二连接器之间的第二间距，所述第一直径大于所述第二直径，并且所述第一间距大于所述第二间距。
7.根据权利要求6所述的结构，进一步包括模塑料，所述模塑料围绕所述第一管芯和所述第二管芯以及在所述第一管芯和所述第二管芯之间。
8.根据权利要求7所述的结构，其中，所述第一管芯的顶面从所述模塑料暴露出来，并且所述模塑料覆盖第二管芯的顶面。
9.一种形成结构的方法，所述方法包括：
将第一管芯连接于衬底的表面，所述第一管芯通过第一电连接器连接，所述第一电连接器具有第一尺寸；以及
将第二管芯连接于所述衬底的所述表面，所述第二管芯通过第二电连接器连接，所述第二电连接器具有第二尺寸，所述第一尺寸大于所述第二尺寸。
10.根据权利要求9所述的方法，进一步包括在所述第一管芯和所述第二管芯周围施加模塑料。
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