JP6970219B2 - アンダーバンプメタル構造体用のカラー並びにそれに関連するシステム及び方法 - Google Patents

アンダーバンプメタル構造体用のカラー並びにそれに関連するシステム及び方法 Download PDF

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JP6970219B2
JP6970219B2 JP2020005714A JP2020005714A JP6970219B2 JP 6970219 B2 JP6970219 B2 JP 6970219B2 JP 2020005714 A JP2020005714 A JP 2020005714A JP 2020005714 A JP2020005714 A JP 2020005714A JP 6970219 B2 JP6970219 B2 JP 6970219B2
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ubm structure
ubm
collar
semiconductor
semiconductor die
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JP2020074436A (ja
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マリオッティーニ，ジョルジオ
エス． ヴァダフカー，サミア
エイチ． ファン，ウェイン
チャンドル，アニルクマール
ボスラー，マーク
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マイクロン テクノロジー，インク．
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Description

本技術は、概して半導体デバイスを対象とし、より具体的には、幾つかの実施形態においてはダイ間及び／又はパッケージ間の相互接続用のアンダーバンプメタル（ＵＢＭ）構造体を対象とする。
例えば、メモリデバイス、マイクロプロセッサ、及び発光ダイオード等のマイクロ電子デバイスは、典型的には、基板に実装されプラスチックの保護カバーに入れられた１つ以上の半導体ダイを含む。半導体ダイは、例えば、メモリセル、プロセッサ回路、及び相互接続回路等の機能的フィーチャを含む。半導体ダイは、典型的には、機能的フィーチャに電気的に結合されたボンドパッドをも含む。ボンドパッドは、半導体ダイをバス、回路、若しくはその他のアセンブリに接続するために保護カバーの外側に延伸するピン又はその他の端子類に電気的に接続される。
半導体ダイの製造は、ダイが占有する体積を削減し、それにもかかわらず、その結果もたらされる封入されたアセンブリの容量及び／又は速度を増加させるという圧力の増加の下にある。これらの要求を満たすために、半導体ダイの製造者は、ダイが実装される回路基板又はその他の素子上の限定された体積内でデバイスの容量又は性能を増大させるために、多数のダイをしばしば相互に積み重ねる。多くの利用において、ダイは、封入される前に相互に積み重ねられて３次元パッケージを形成する。
積み重ねられた半導体ダイは、典型的には、アンダーバンプメタル（ＵＢＭ）構造体に付着されるはんだバンプ又はその他の電気コネクタによって電気的に接続される。ＵＢＭ構造体は、典型的には、銅シード構造体をウエハ上に堆積し、ダイ上のボンドパッドと整列された開口部を有するマスクを銅シード構造体上に形成し、シード構造体上に銅をめっきし、ＵＢＭ構造体を形成するために銅の上に１つ以上のその他の材料をその後めっきすることによって形成される。ＵＢＭ構造体の最上層の材料は、典型的には、その後に最上層の材料に相互接続を形成するための湿潤（wetting）を促進するために選択される。Ｕ
ＢＭ構造体を形成した後、相互接続としての機能を果たすように、ＵＢＭ構造体の最上層の材料の上にはんだ材料のマイクロバンプが形成される。ＵＢＭ構造体及びマイクロバンプを形成した後、マスクが除去され、分離されたＵＢＭ構造体及びマイクロバンプを形成するために適切なウェットエッチングを用いてシード構造体の露出部分が除去される。本技術は、改良されたＵＢＭ構造体及びＵＢＭ構造体の製造方法を対象とする。
本発明の半導体ダイの一態様は、固体状態の構成要素を有する半導体材料と、前記半導体材料を少なくとも部分的に通って延伸する相互接続部と、前記相互接続部に電気的に結合されたアンダーバンプメタル（ＵＢＭ）構造体であって、前記ＵＢＭ構造体は、上面、底面、及び前記上面と前記底面との間に延伸する側壁を有し、前記ＵＢＭ構造体は、第１の導電性材料と、前記第１の導電性材料上に配置された第２の導電性材料とを含む、ＵＢＭ構造体と、前記第１の導電性材料の全部ではない一部と、前記第２の導電性材料の少なくとも一部とを取り囲むように、前記ＵＢＭ構造体の前記側壁の少なくとも一部を取り囲むカラーであって、前記カラーは、前記ＵＢＭ構造体の前記上面よりも上方へ延伸しておらず、かつ、前記半導体材料に接触していない、カラーと、前記ＵＢＭ構造体の前記上面
上に配置されたはんだ材料と、を含み、前記カラーは、酸化物、窒化物、又はポリイミドのうちの少なくとも１つを含む抗湿潤材料を含み、前記はんだ材料は液相において前記抗湿潤材料を容易には濡らさない、ことを特徴とする。
本技術の多くの態様は以下の図面を参照してより理解できる。図面中の構成要素は、必ずしも縮尺通りではく、むしろ本技術の原理を明確に図示することに重点が置かれている。
本技術の実施形態に従った複数の半導体ダイを概略的に示す基板アセンブリの断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の別の実施形態に従った方法のある段階における半導体ダイの一部を概略的に示す断面図である。 本技術の実施形態に従った方法のフローチャートである。 本発明の実施形態に従った方法のフローチャートである。 本発明の実施形態に従った半導体デバイスを組み込むシステムを示すブロック図である。
半導体デバイスを作るための方法の幾つかの実施形態の具体的詳細が関連するデバイス及びシステムと共に本明細書に記載される。用語「半導体デバイス」とは、概して、１つ以上の半導体材料を含む固体状態のデバイスを指す。半導体デバイスの一例としては、とりわけ、論理デバイス、メモリデバイス、マイクロプロセッサ、及びダイオードが挙げられる。また、用語「半導体デバイス」は、完成されたデバイスを指し得、又は完成されたデバイスになる以前の様々な処理段階におけるアセンブリ若しくはその他の構造体を指し
得る。それが用いられる内容に応じて、用語「基板」は、ウエハレベルの基板を指し得、又はシンギュレートされたダイレベルの基板を指し得る。本明細書に記載される方法の適切なステップがウエハレベル又はダイレベルで実行できることは当業者であれば分かるであろう。また、特に断りがない限り、本明細書で開示される構造体は、従来の半導体製造技術を用いて形成され得る。材料は、例えば、化学蒸着、物理蒸着、原子層堆積、スピンコーティング、及び／又はその他の適切な技術を用いて堆積され得る。同様に、材料は、例えば、プラズマエッチング、ウェットエッチング、化学機械平坦化、又はその他の適切な技術を用いて除去され得る。
本技術の多くの実施形態は、例えば、完成した場合に基板及び又はパッケージ材料を完全に通過して延伸する導電性のプラグ又はコネクタを有する貫通シリコンビア等の、ＴＳＶに電気的に結合されるＵＢＭ構造体に関連して以下に記述される。本技術は、基板アセンブリの第１の側面又は第２の側面の何れかの上にＵＢＭ構造体を形成するための実施形態を含むこと、並びにＵＢＭ構造体は、半導体アセンブリと関連付けられたその他の電気コネクタに関連して用いられてもよいことも当業者であれば理解するであろう。本技術は、その結果、図１〜図６を参照しながら本明細に記述される実施形態の幾つかの詳細なしに実施されてもよい。参照を容易にするため、同じ参照番号は、この開示を通じて同様の若しくは類似の構成要素又はフィーチャを識別するために用いられるが、同じ参照符号の使用は、フィーチャが同じであると解釈されるべきことを意味しない。実際、本明細書に記述される多くの実施形態において、全く同じ番号が付されたフィーチャは、構造体及び／又は機能が互いに異なる複数の実施形態を有する。また、構成的に同様であり得る断面中の材料を示すために同じ陰影が用いられ得るが、本明細書に特段に言及がない限り、同じ陰影の使用は、材料が同じであると解釈されるべきことを意味しない。
ＵＢＭ構造体及びマイクロバンプは、リフロー処理を用いて隣接するダイに付着される。ＵＢＭ構造体の上部に配置されたマイクロバンプのリフローの間、マイクロバンプの幾つかの材料（例えば、スズ）はＵＢＭ構造体の材料（例えば、銅）と反応し得、それは、ＵＢＭ構造体と隣接するダイとの相互接続に有害に作用し得る。例えば、マイクロバンクからの幾つかの材料は、ＵＢＭ構造体に沿って濡れる側壁に起因して流出し得る。これは、マイクロバンプの側壁上の金属間化合物の形成を導き得る。加えて、マイクロバンプ材料の幾つか（例えば、スズ）は、ＵＢＭ構造体の材料（例えば、銅）に達して反応している間拡散し得、マイクロバンプ中の利用可能なスズに対してモル体積の縮小をもたらす（ハンダ欠乏とも称される）。これら２つの影響は、マイクロバンプの中心で利用可能な無反応なはんだ材料の減少をもたらし、はんだ接合中の隙間を引き起こし、電子移動の信頼性を減らす。
本技術の幾つかの実施形態は、マイクロバンプのリフローの間、マイクロバンプのはんだ材料がＵＢＭ構造体の材料と反応する可能性を削減する。例えば、本技術の幾つかの実施形態は、マイクロバンプからのはんだと反応することからＵＢＭの側壁を保護する、ＵＢＭ構造体の第１の材料及び／又は第２の材料の少なくとも一部の周囲にカラーを形成する。本技術の幾つかの実施形態は、それ故、より詳細に以下で説明されるように、マイクロバンプのリフローの間、マイクロバンプとＵＢＭの側壁との反応を削減する。
図１は、第１の側１１２及び第２の側１１４を伴う半導体材料１１０を有する基板アセンブリ１００を概略的に図示する断面図である。基板アセンブリ１００は、半導体材料１１０の第２の側面１１４上の誘電性材料１１６を更に含む。複数の半導体ダイ１２０は、基板アセンブリ１００の別々の領域に形成される。図１には２つの半導体ダイ１２０が図示されているが、実施において基板アセンブリ１００は、典型的には、数百又は１０００以上の個々の半導体ダイを有する。個々の半導体ダイ１２０は、集積回路１２２と、集積回路１２２に電気的に結合された複数の相互接続部１２４とを含み得る。図１に示された
実施形態では、相互接続部１２４は、誘電性ライナー１２６と誘電性ライナー１２６内の導電性プラグ１２８とを含むＴＳＶである。従って、相互接続部１２４は、基板アセンブリ１００を貫通して延伸しうる。
半導体ダイ１２０は複数のＵＢＭ構造体１３０を更に含み、個々のＵＢＭ構造体１３０は対応する相互接続部１２４に電気的に結合される。幾つかの実施形態では、個々のＵＢＭ構造体１３０は、相互接続部１２４の１つに電気的に結合された第１の材料１３２と、第１の材料１３２上の第２の材料１３４とを含む。抗湿潤（anti-wetting）材料１３６は、第１の材料１３２及び第２の材料１３４の少なくとも一部の周囲にカラー１３８を形成する。半導体ダイ１２０は、個々のＵＢＭ構造体１３０の第２の材料１３４上のマイクロバンプ１４０をも含み得る。
特定の実施形態では、第１の材料１３２は銅を含み、第２の材料１３４はニッケルを含み、マイクロバンプ１４０はスズ−銀はんだ材料を含み、カラー１３８は、酸化物、例えば、オルトケイ酸テトラエチル（ＴＥＯＳ）又は別の酸化物を含む。この実施形態は、Ｃｕ／Ｎｉ ＵＢＭ構造体１３０上に形成されたマイクロバンプ１４０を伴うＣｕ／Ｎｉ ＵＢＭ構造体１３０と、ＵＢＭ構造体１３０の上面（例えば、第２の材料１３４の上面）を被覆することなくＮｉ及びＣｕの少なくとも一部の露出した側壁を取り囲む酸化物カラーとを形成する。その他の実施形態では、第１の材料１３２及び第２の材料１３４は、例えば、金、シリコン、タングステン等の任意の導電性材料を含み得る。ＵＢＭ構造体の形状及び寸法は多様であり得る。例えば、幾つかの実施形態では、ＵＢＭ構造体１３０は、実質的に円柱形であり、ピラー類似の構造体を形成するが、ＵＢＭ構造体１３０は、その他の実施形態では、例えば、長方形、正多角形、不規則多角形、楕円形等のその他の断面形状を有し得る。ＵＢＭ構造体１３０は、約１〜１００ミクロンの厚さを有し得、約１〜１００ミクロンの高さを有し得る。
マイクロバンプ１４０は、例えば、スズ−銀、インジウム、又は、ＵＢＭ構造体１３０と隣接するダイとの電気的機械的接続を形成するのに適切な別のはんだ材料等のはんだ材料を含み得る。カラー１３８を形成する抗湿潤材料１３６は、幾つかの実施形態では、第１の材料１３２及び第２の材料１３４の側壁上のマイクロバンプ１４０の濡れを阻止する材料を含む（例えば、抗湿潤材料１３６は、マイクロバンプ１４０の材料に非湿潤性の表面を提供する）。抗湿潤材料１３６は、マイクロバンプ１４０のはんだ材料に対して極めて低度か無視できる程度の拡散性を有し得る。例えば、幾つかの実施形態では、抗湿潤材料１３６は、酸化物、窒化物、又はポリイミドを含む。抗湿潤材料１３６は、幾つかの実施形態では約１０００〜５０００Åの厚さ、又は幾つかの実施形態では約２０００〜２５００Åの厚さを有する。一部の実施形態では、抗湿潤材料１３６は、第１の材料１３２及び／又は第２の材料１３４の周囲の少なくとも一部を完全に取り囲むが、他の実施形態では、抗湿潤材料１３６は、全周囲に満たない範囲を被覆する。抗湿潤材料１３６はまた、ＵＢＭ構造体１３０の高さの少なくとも一部に沿って延伸し；例えば、抗湿潤材料１３６は、ＵＢＭ構造体１３０の高さの少なくとも８０％を被覆する。抗湿潤材料１３６を含むカラー１３８は、ＵＢＭ構造体１３０の第１の材料１３２及び第２の材料１３４の側壁に沿ってマイクロバンプ１４０からのはんだの濡れを除去するか削減する。本技術に従ったＵＢＭ構造体、カラー、及びマイクロバンプを形成する更なる実施形態及び態様は、図２Ａ〜図３Ｇを参照しながら以下に記述される。
図２Ａ〜図２Ｈは、ＵＢＭ構造体、カラー、及びマイクロバンプを形成するための方法の様々な段階の間の基板アセンブリ１００の一部における半導体ダイ１２０を概略的に図示する断面図である。図２Ａを参照すると、該方法のこの段階において、半導体ダイ１２０は、誘電性材料１１６上と、基板１１０の第２の側１１４に近接する相互接続部１２４の一部分上とに形成されたシード構造体２４０と、シード構造体２４０上のマスク２５０
とを有する。シード構造体２４０は、相互接続部１２４の位置と関連付けられた第１の領域２４２と、第１の領域２４２間の第２の領域２４４とを有し得る。シード構造体２４０は、ＵＢＭ構造体のベース又は第１の材料をめっきするのに適切な単一の材料であり得る。一部の実施形態では、シード構造体２４０は、バリア材料とバリア材料上のシード材料とを含む。バリア材料は、タンタル、窒化タンタル、チタン、チタン−タングステン、又は誘電性材料１１６及び基板１２０中へのＵＢＭ材料の拡散を阻止する別の材料であり得る。シード材料は、銅、銅合金、ニッケル、又は周知の電気めっき若しくは非電気めっき技術を用いてシード材料に第１の材料１３２（図１）をめっきするのに適切なその他の材料であり得る。実施する上で、シード構造体２４０は、相互接続部１２４の導電性プラグ１２８と一体化され得る。
マスク２５０は、シード構造体２４０の第１の領域２４２と整列された複数の開口部２５２を有するレジスト材料又はその他の適切なマスク材料であり得る。より詳細を以下で説明するが、ＵＢＭ構造体は、マスク２５０の開口部２５２中に形成される。マスク材料２５０の開口部２５２は、図２Ａに示されるように側面から見た場合にＴ型の断面を有し、上部２５４は下部２５６よりも広い開口を有する。マスク２５０のこのＴ型開口部２５２は、フォトリソグラフィ又はその他の適切な技術の間、リーククロムマスクを用いて形成され得る。
図２Ｂは、シード構造体２４０の露出した第１の領域２４２（図２Ａ）上に第１の材料１３２が形成された後の半導体ダイ１２０を概略的に図示する断面図である。一実施形態では、シード構造体２４０は、物理蒸着処理を用いて堆積された銅シード材料を含み、第１の材料１３２は、周知の電気めっき又は非電気めっき技術を用いて銅シード材料上に堆積された銅を含む。第１の材料１３２は、それ故、ＵＢＭ構造体のベース材料を画定し得る。一実施形態では、第１の材料１３２は、処理のこの段階では第１の直径（例えば、３０μｍ）と高さ（３０μｍ）とを有するが、第１の材料１３２の直径及び高さは、具体的な半導体ダイ１２０の特定の構造に従って任意のその他の寸法を有し得る。
図２Ｃは、第１の材料１３２上に第２の材料１３４があるように第２の材料１３４が開口部２５２中に配置された後の半導体ダイ１２０を概略的に図示する断面図である。第２の材料１３４は、第２の材料１３４上に相互接続部を形成するのに適した濡れ面を提供するニッケル又はその他の適切な材料を含み得る。第１の材料１３２及び第２の材料１３４は、ＵＢＭ構造体１３０を画定し得る。処理のこの段階では、半導体ダイ１２０は、シード構造体２４０を通じて電気的に相互に結合される複数のＵＢＭ構造体１３０を有する。幾つかの実施形態では、第２の材料は完全に省略され得、ＵＢＭ構造体は第１の材料のみを含み得る。
図２Ｄは、本技術の一実施形態に従ってカラー開口部２５８を画定するためにマスク２５０の一部を除去した後の半導体ダイ１２０を概略的に図示する断面図である。マスク２５０は、異方性ドライエッチング及びドライクリーニングを用いてエッチングされ得る。ドライエッチングは、ＵＢＭ構造体１３０に隣接するカラー開口部１５８中でマスク２５０が完全に除去されるまで、半導体ダイ１２０に渡って十分一様にマスク２５０を除去し得る。カラー開口部１５８は、カラー１３８（図１）の厚さを画定し得、例えば、約１０００〜５０００Åの厚さ又は約２０００〜２５００Åの厚さを有する。ドライエッチングのパラメータ（例えば、化学的性質、電力、温度等）は、後続する堆積ステップ用のマスク２５０を準備するためのエッチングの間、マスク２５０を硬化するために調整され得る。
図２Ｅは、本技術の一実施形態に従って抗湿潤材料１３６が形成された後の半導体ダイ１２０を概略的に図示する断面図である。抗湿潤材料１３６は、マイクロバンプ１４０（
図１）のはんだ材料が液相において容易には濡れず、且つ／又はマイクロバンプ１４０（図１）のはんだ材料に対して低度の若しくは無視できる程度の拡散性を有する材料であり得る。抗湿潤材料１３６は、酸化物、窒化物、ポリイミド、又はその他の適切な材料であり得る。一実施形態では、抗湿潤材料１３６は、低温（例えば、１５０℃未満）プラズマ増強化学蒸着又はその他の適切な処理により形成されたオルトケイ酸テトラエチル（ＴＥＯＳ）である。抗湿潤材料１３６は、マスク２５０及び開口部２５２上にブランケット層として形成され、ＵＢＭ構造体１３０を被覆することと、カラー開口部２５８（図２Ｄ）を充填することとを含む。
図２Ｆは、本技術の一実施形態に従って抗湿潤材料１３６の一部分が除去された後の半導体ダイ１２０を概略的に図示する断面図である。抗湿潤材料１３６の一部分を除去するために、緩衝酸化物エッチング（buffered oxide etch）又はスペーサエッチング、及び
その後に続くウェットクリーニングが用いられ得る。図２Ｆに示されるように、抗湿潤材料１３６の多くは、カラー１３８を形成するためにカラー開口部２５８（図２Ｄ）中に抗湿潤材料１３６の残余部分のみが存在するまで除去されている。他の実施形態では、カラー１３８は第２の材料１３４に関して埋め込まれ得るが、幾つかの実施形態では、カラー１３８は第２の材料１３４と実質的に同一平面にあり得る。
図２Ｇは、本技術の一実施形態に従ってマイクロバンプ１４０が形成された後の半導体ダイ１２０を概略的に図示する断面図である。マイクロバンプ１４０は、ＵＢＭ１３０及びカラー１３８の上部の開口部２５２をめっきするはんだ材料（例えば、スズ−銀又はインジウムはんだ）から形成され得る。幾つかの実施形態では、マイクロバンプ１４０は、約３〜５０ミクロンの高さを有し得る。
図２Ｈは、ＵＢＭ構造体１３０同士を互いに電気的に分離するためにマスク２５０とシード構造体２４０の一部分とが除去された後の半導体ダイ１２０を概略的に図示する断面図である。マスク２５０は、ウェットフォトレジスト剥離又はその他の適切な技術を用いて除去され得、その後、シード構造体２４０の第２の領域２４４は、シード構造体の材料を除去するのに適したウェットエッチングを用いて除去され得る。現時点において、ＵＢＭ構造体は相互に電気的に分離される。
図３Ａ〜図３Ｇは、本技術の別の実施形態に従ってＵＢＭ構造体、カラー、及びマイクロバンプを製造する様々な段階の間の基板アセンブリ１００の一部における半導体ダイ１２０を概略的に図示する断面図である。図３Ａを参照すると、該方法のこの段階では、半導体ダイ１２０は、誘電性材料１１６上と、基板１１０の第２の側１１４に近接する相互接続部１２４の一部分上のシード構造体２４０を有し、マスク２５０はシード構造体２４０上にある。シード構造体２４０は、相互接続部１２４の位置に関連付けられた第１の領域２４２と、第１の領域２４２間の第２の領域２４４とを有する。マスク２５０は、シード構造体２４０の第１の領域２４２と整列された複数の開口部２５２を有する、レジスト材料又はその他の適切なマスク材料であり得る。以下でより詳細を説明するように、ＵＢＭ構造体は、マスク２５０の開口部２５２中に形成される。
図３Ｂは、本技術の一実施形態に従って抗湿潤材料１３６が形成された後の半導体ダイ１２０を概略的に図示する断面図である。抗湿潤材料１３６は、マイクロバンプ１４０（図１）のはんだ材料が液相において容易には濡れず（例えば、被覆せず）、且つ／又はマイクロバンプ１４０（図１）のはんだ材料に対して低度の若しくは無視できる程度の拡散性を有する材料であり得る。抗湿潤材料１３６は、酸化物（例えば、オルトケイ酸テトラエチル（ＴＥＯＳ）又は別の酸化物）、窒化物、ポリイミド、又はその他の適切な材料であり得る。一実施形態では、抗湿潤材料１３６は、低温（例えば、１５０℃未満）プラズマ増強化学蒸着又はその他の適切な処理により形成されたオルトケイ酸テトラエチル（Ｔ
ＥＯＳ）である。抗湿潤材料１３６は、マスク２５０及び開口部２５２上にブランケット層として形成される。
図３Ｃは、本技術の一実施形態に従って抗湿潤材料１３６の一部分が除去された後の半導体ダイ１２０を概略的に図示する断面図である。抗湿潤材料１３６の一部分を除去するために、スペーサ酸化物エッチング及びその後に続くウェットクリーニングが用いられる。図３Ｃに示されるように、抗湿潤材料１３６の被覆部分は、抗湿潤材料１３６の残余部分のみが開口部１５２の側壁に沿うまで除去されている。
図３Ｄは、シード構造体２４０の露出した第１の領域２４２（図３Ｃ）上に第１の材料１３２が形成され、第１の材料１３２上に第２の材料１３４が形成された後の半導体ダイ１２０を概略的に図示する断面図である。一実施形態では、シード構造体２４０は、物理蒸着処理を用いて堆積された銅シード材料を含み、第１の材料１３２は、周知の電気めっき又は非電気めき処理を用いて銅シード材料に堆積された銅を含む。第１の材料１３２及び第２の材料１３４は、抗湿潤材料１３６により取り囲まれたＵＢＭ構造体１３０を画定し得る。処理のこの段階では、半導体ダイ１２０は、シード構造体２４０を通じて電気的に相互に結合される複数のＵＢＭ構造体１３０を有する。幾つかの実施形態では、第２の材料は完全に省略され得、ＵＢＭ構造体は第１の材料のみを含み得る。
図３Ｅは、カラー１３８を形成するために抗湿潤材料１３６の更なる一部分が除去された後の半導体ダイ１２０を概略的に図示する断面図である。図３Ｂに関して上述した処理と同様に、抗湿潤材料１３６の追加の一部分は、スペーサ酸化物エッチング及びその後に続くウェットクリーニングを用いて除去され得る。図３Ｅに示されるように、開口部１５２の側壁に沿う抗湿潤材料１３６の残余部分のみが第２の材料１３４と実質的に同一平面にあり、それによってカラー１３８を形成するまで、抗湿潤材料１３６は除去されている。
図３Ｆは、マイクロバンプ１４０が形成された後の半導体ダイ１２０を概略的に図示する断面図である。マイクロバンプ１４０は、ＵＢＭ構造体１３０及びカラー１３８の上部の開口部２５２中にめっきされるはんだ材料（例えば、スズ−銀又はインジウムはんだ）から形成される。幾つかの実施形態では、マイクロバンプ１４０は、約３〜５０ミクロンの高さを有し得る。
図３Ｇは、ＵＢＭ構造体１３０同士を互いに電気的に分離するためにマスク２５０及びシード構造体２４０が除去された後の半導体ダイ１２０を概略的に図示する断面図である。マスク２５０は、ウェットフォトレジスト剥離又はその他の適切な技術を用いて除去され得、その後、ＵＢＭ構造体１３０を相互に電気的に分離するために適切なウェットエッチングを用いてシード構造体２４０の第２の領域２４４が除去され得る。
図４は、本技術の実施形態に従って半導体ダイ上のＵＢＭ構造体を形成するための一実施形態の方法４００のフローチャートである。この実施形態では、方法４００は、シード構造体上にマスクを形成すること（ブロック４０２）と、シード構造体の露出領域に第１の材料をめっきすること（ブロック４０４）とを含む。マスクは、例えば、半導体基板を少なくとも部分的に通じて延伸する相互接続部に電気的に結合されるシード構造体の領域を露出する開口部を含む。一部の実施形態は、マスクの開口部は、ＴＳＶ上に重ねられる。方法４００は、第１の材料上の開口部中に第２の材料を堆積し、それによってＵＢＭ構造体を形成すること（ブロック４０６）と、ＵＢＭ構造体の周囲のカラー領域をエッチングすること（ブロック４０８）とを更に含む。該方法は、ＵＢＭ構造体上であってカラー領域の中に抗湿潤材料を形成すること（ブロック４１０）と、続いて、カラー領域中の第２の材料と実質的に同一平面になるまで抗湿潤材料をエッチングすること（ブロック４１
２）とにより継続する。このステップは、ＵＢＭ構造体を取り囲むカラーを形成する。方法４００は、ＵＢＭ構造体上にマイクロバンプを形成すること（ブロック４１４）により継続する。マスクはその後除去され、続いて、ウェットエッチングによりＵＢＭ構造体間のシード材料の露出部分が除去される。
図５は、本技術の実施形態に従って半導体ダイ上にＵＢＭ構造体を形成するための一実施形態の方法５００のフローチャートである。この実施形態では、方法５００は、シード構造体上にマスクを形成すること（ブロック５０２）と、マスク及びシード材料の露出部分上に抗湿潤材料を形成すること（ブロック５０４）とを含む。マスクは、例えば、半導体基板を少なくとも部分的に通じて延伸する相互接続部に電気的に結合されるシード構造体の領域を露出する開口部を含む。一部の実施形態では、マスクの開口部は、ＴＳＶ上に重ねられる。方法５００は、シード構造体が露出され、残余の抗湿潤材料が開口部中のカラーを画定するまで抗湿潤材料をエッチングすること（ブロック５０６）を更に含む。例えば、抗湿潤材料は、緩衝酸化物エッチング又はスペーサエッチングと、その後に続くウェットクリーニングとを用いてエッチングされ得る。方法５００は、開口部中のシード材料上の第１の材料をめっきすること（ブロック５０８）と、開口中の第１の導電性材料上に第２の導電性材料を形成し、それによりＵＢＭ構造体を形成すること（５１０）とにより継続する。方法５００は、開口部中の第２の導電性材料と実質的に同一平面にカラーがなるまで抗湿潤材料をその後除去する（ブロック５１２）。方法５００は、ＵＢＭ構造体上にマイクロバンプを形成すること（ブロック５１４）により継続する。マスクは、その後除去され、続いて、ウェットエッチングによりＵＢＭ構造体間のシード材料の露出部分が除去される。
図１〜図５を参照しながら上述したフィーチャを有する半導体デバイスの任意の１つは、図６に概略的に示されたシステム６００を代表的な一例とする、より大きな及び／又はより複雑な無数のシステムの何れかに組み込まれ得る。システム６００は、プロセッサ６０２、メモリ６０４（例えば、ＳＲＡＭ、ＤＲＡＭ、フラッシュメモリ、及び／若しくはその他のメモリデバイス）、入出力デバイス６０６、並びに／又はその他のサブシステム若しくは構成要素６０８を含み得る。図１〜図５を参照しながら上述した半導体デバイス１００は、図６に示される要素の何れかに含まれ得る。もたらされるシステム６００は、適切な計算、処理、記憶、検出、画像化、及び／又はその他の機能の多種多様な何れかを実行するように構成され得る。したがって、システム６００の代表例は、例えば、デスクトップコンピュータ、ラップトップコンピュータ、インターネット家電、ハンドヘルドデバイス（例えば、パームトップコンピュータ、ウェアラブルコンピュータ、セルラー若しくは携帯電話、携帯情報端末、音楽プレーヤ等）、タブレット、マルチプロセッサシステム、プロセッサベース若しくはプログラマブルな家庭用電化製品、ネットワークコンピュータ、並びにマイクロコンピュータ等のコンピュータ及び／又はその他のデータプロセッサを含むが、これらに限定されない。システム６００の追加の代表例は、照明、カメラ、車両等を含む。これら及びその他の例に関して、システム６００は、単一のユニットに包含され得、又は例えば、通信ネットワークを通じて、多数の接続ユニットを介して分配され得る。システム６００の構成要素は、それ故、ローカル及び／又は遠隔の記憶保存デバイス、並びに多種多様な任意の適切なコンピュータ読み取り可能媒体を含み得る。
前述の内容から、本発明の特定の実施形態が説明の目的で本明細書に記載されているが、本発明の範囲から逸脱することなく様々な変更が行われてもよいことが理解されるであろう。したがって、発明は、添付の請求項の範囲による場合を除いて限定されない。

Claims (10)

  1. 固体状態の構成要素を有する半導体材料と、
    前記半導体材料を少なくとも部分的に通って延伸する相互接続部と、
    前記相互接続部に電気的に結合されたアンダーバンプメタル（ＵＢＭ）構造体であって、前記ＵＢＭ構造体は、上面、底面、及び前記上面と前記底面との間に延伸する側壁を有し、前記ＵＢＭ構造体は、前記半導体材料の上面上に誘電体材料を介して配置され且つ前記相互接続部に直接接触する第１の導電性材料と、前記第１の導電性材料上に配置された第２の導電性材料とを含む、ＵＢＭ構造体と、
    前記第１の導電性材料の全部ではない一部と、前記第２の導電性材料の少なくとも一部とを取り囲むように、前記ＵＢＭ構造体の前記側壁の少なくとも一部を取り囲むカラーであって、前記カラーは、前記ＵＢＭ構造体の前記上面よりも上方へ延伸しておらず、かつ、前記半導体材料に接触していない、カラーと、
    前記ＵＢＭ構造体の前記上面上に配置されたはんだ材料と、
    を含み、
    前記カラーは、酸化物、窒化物、又はポリイミドのうちの少なくとも１つを含む抗湿潤材料を含み、前記はんだ材料は液相において前記抗湿潤材料を容易には濡らさない、半導体ダイ。
  2. 前記ＵＢＭ構造体はピラーであり、前記カラーは前記ピラーの前記側壁のみを被覆する、請求項１に記載の半導体ダイ。
  3. 前記カラーは、前記ＵＢＭ構造体の前記側壁の高さの一部に沿って延伸し、かつ、前記ＵＢＭ構造体の前記上面を被覆しない、請求項１に記載の半導体ダイ。
  4. 前記カラーは、前記ＵＢＭ構造体の前記側壁の高さの少なくとも８０％に沿って延伸する、請求項３に記載の半導体ダイ。
  5. 前記カラーの上面は、前記ＵＢＭ構造体の前記上面と実質的に同一平面にある、請求項１に記載の半導体ダイ。
  6. 前記ＵＢＭ構造体は約１〜１００ミクロンの高さを有する、請求項１に記載の半導体ダイ。
  7. 固体状態の構成要素を有する半導体材料と、
    前記半導体材料を少なくとも部分的に通って延伸する相互接続部と、
    前記相互接続部に電気的に結合されたアンダーバンプメタル（ＵＢＭ）構造体であって、前記ＵＢＭ構造体は、上面、底面、及び前記上面と前記底面との間に延伸する側壁を有し、前記ＵＢＭ構造体は、前記半導体材料の上面上に誘電体材料を介して配置され且つ前記相互接続部に直接接触する第１の導電性材料と、前記第１の導電性材料上に配置された第２の導電性材料とを含む、ＵＢＭ構造体と、
    前記第１の導電性材料の全部ではない一部と、前記第２の導電性材料の少なくとも一部とを取り囲むように、前記ＵＢＭ構造体の前記側壁の少なくとも一部を取り囲むカラーであって、前記カラーは、前記ＵＢＭ構造体の前記側壁の高さの一部に沿って延伸し、かつ、前記ＵＢＭ構造体の前記上面を被覆しておらず、かつ、前記半導体材料に接触していない、カラーと、
    前記ＵＢＭ構造体の前記上面上に配置されたはんだ材料と、
    を含み、
    前記カラーは、酸化物、窒化物、又はポリイミドのうちの少なくとも１つを含む抗湿潤材料を含み、前記はんだ材料は液相において前記抗湿潤材料を容易には濡らさない、半導体ダイ。
  8. 前記カラーは、前記ＵＢＭ構造体の前記側壁の前記高さの少なくとも８０％に沿って延伸する、請求項７に記載の半導体ダイ。
  9. 前記カラーの上面は、前記ＵＢＭ構造体の前記上面と実質的に同一平面にある、請求項７に記載の半導体ダイ。
  10. アンダーバンプメタル（ＵＢＭ）構造体の周辺領域に、酸化物、窒化物、又はポリイミドのうちの少なくとも１つを含む抗湿潤材料をメッキし、該抗湿潤材料を前記ＵＢＭ構造体の上面と同一平面までエチングすることにより、前記抗湿潤材料からカラーを形成することであって、前記カラーは、前記ＵＢＭ構造体の前記上面を被覆することなく前記ＵＢＭ構造体の側壁の少なくとも一部を取り囲み、前記ＵＢＭ構造体は、半導体材料の上面上に誘電体材料を介して配置され且つ相互接続部に直接接触する第１の導電性材料と、前記第１の導電性材料上に配置された第２の導電性材料とを含み、前記カラーは、前記第１の導電性材料の全部ではない一部と、前記第２の導電性材料の少なくとも一部とを取り囲み、かつ、前記半導体材料に接触しない、ことと、
    前記ＵＢＭ構造体の前記上面上にはんだ材料を配置することであって、前記はんだ材料が液相である場合に前記はんだ材料は前記抗湿潤材料を容易には濡らさない、ことと、
    を含む、方法。
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US9780052B2 (en) 2017-10-03
US20170077052A1 (en) 2017-03-16
CN113643994A (zh) 2021-11-12
EP3350829A1 (en) 2018-07-25
CN108028229A (zh) 2018-05-11
KR102124136B1 (ko) 2020-06-18
KR20180043382A (ko) 2018-04-27
WO2017048388A1 (en) 2017-03-23
US20170352633A1 (en) 2017-12-07
JP6672452B2 (ja) 2020-03-25
CN108028229B (zh) 2021-08-31
EP3350829A4 (en) 2019-04-03
TWI623064B (zh) 2018-05-01
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US10886244B2 (en) 2021-01-05
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