JP2015088739A5 - - Google Patents
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- JP2015088739A5 JP2015088739A5 JP2014184757A JP2014184757A JP2015088739A5 JP 2015088739 A5 JP2015088739 A5 JP 2015088739A5 JP 2014184757 A JP2014184757 A JP 2014184757A JP 2014184757 A JP2014184757 A JP 2014184757A JP 2015088739 A5 JP2015088739 A5 JP 2015088739A5
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- Prior art keywords
- film
- oxide
- contact
- insulating film
- oxide semiconductor
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 15
- 229910044991 metal oxide Inorganic materials 0.000 claims 9
- 150000004706 metal oxides Chemical class 0.000 claims 9
- 239000003990 capacitor Substances 0.000 claims 4
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 3
- 125000004429 atoms Chemical group 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 2
- 238000002003 electron diffraction Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
Claims (5)
前記トランジスタは、前記絶縁表面上に設けられたゲート電極と、
前記ゲート電極と少なくとも一部が重なる酸化物半導体膜と、
前記ゲート電極及び前記酸化物半導体膜の間に設けられるゲート絶縁膜と、
前記酸化物半導体膜に接する一対の電極と、
前記一対の電極の少なくとも一部を覆う酸化物絶縁膜と、
前記酸化物絶縁膜に接する窒化物絶縁膜と、を有し、
前記容量素子は、前記ゲート絶縁膜と接する金属酸化物膜と、
前記金属酸化物膜と少なくとも一部が重なる透光性を有する導電膜と、
前記金属酸化物膜及び前記透光性を有する導電膜の間に設けられる前記窒化物絶縁膜と、を有し、
前記酸化物半導体膜および前記金属酸化物膜において、透過電子回折測定装置を用いて、一次元的に３００ｎｍの範囲で観察箇所を変化させたとき、配向性を示す輝点を有する回折パターンが観察される領域の割合が、８０％以上１００％未満である領域を有することを特徴とする半導体装置。 A transistor and a capacitor provided over an insulating surface;
The transistor includes a gate electrode provided on the insulating surface;
An oxide semiconductor film at least partially overlapping the gate electrode;
A gate insulating film provided between the gate electrode and the oxide semiconductor film;
A pair of electrodes in contact with the oxide semiconductor film;
An oxide insulating film covering at least part of the pair of electrodes;
A nitride insulating film in contact with the oxide insulating film,
The capacitor element includes a metal oxide film in contact with the gate insulating film,
A light-transmitting conductive film at least partially overlapping with the metal oxide film;
The nitride insulating film provided between the metal oxide film and the light-transmitting conductive film,
In the oxide semiconductor film and the metal oxide film, a diffraction pattern having bright spots indicating orientation is observed when the observation location is changed in a one-dimensional range of 300 nm using a transmission electron diffraction measurement apparatus. A semiconductor device having a region in which a ratio of a region to be formed is 80% or more and less than 100%.
前記トランジスタは、前記絶縁表面上に設けられた開口部を有する酸化物絶縁膜と接する酸化物半導体膜と、
前記酸化物半導体膜に接する一対の電極と、
前記酸化物半導体膜と接するゲート絶縁膜と、
前記ゲート絶縁膜を介して前記酸化物半導体膜と重なるゲート電極と、を有し、
前記容量素子は、前記絶縁表面及び前記開口部を有する酸化物絶縁膜の間に設けられた窒化物絶縁膜と、前記開口部において接する金属酸化物膜と、
前記金属酸化物膜と接する前記ゲート絶縁膜と、
前記ゲート絶縁膜と接する導電膜と、を有し、
前記酸化物半導体膜および前記金属酸化物膜において、透過電子回折測定装置を用いて、一次元的に３００ｎｍの範囲で観察箇所を変化させたとき、配向性を示す輝点を有する回折パターンが観察される領域の割合が、８０％以上１００％未満である領域を有することを特徴とする半導体装置。 A transistor and a capacitor provided over an insulating surface;
The transistor includes an oxide semiconductor film in contact with an oxide insulating film having an opening provided on the insulating surface;
A pair of electrodes in contact with the oxide semiconductor film;
A gate insulating film in contact with the oxide semiconductor film;
A gate electrode overlapping with the oxide semiconductor film through the gate insulating film,
The capacitor element includes a nitride insulating film provided between the insulating surface and the oxide insulating film having the opening, a metal oxide film in contact with the opening,
The gate insulating film in contact with the metal oxide film;
A conductive film in contact with the gate insulating film,
In the oxide semiconductor film and the metal oxide film, a diffraction pattern having bright spots indicating orientation is observed when the observation location is changed in a one-dimensional range of 300 nm using a transmission electron diffraction measurement apparatus. A semiconductor device having a region in which a ratio of a region to be formed is 80% or more and less than 100%.
前記金属酸化物膜の水素濃度は、８×１０１９ａｔｏｍｓ／ｃｍ３以上であることを特徴とする半導体装置。 Oite to claim 1 or claim 2,
2. The semiconductor device according to claim 1, wherein the metal oxide film has a hydrogen concentration of 8 × 10 19 atoms / cm 3 or more.
前記酸化物半導体膜の水素濃度は、５×１０１９ａｔｏｍｓ／ｃｍ３未満であることを特徴とする半導体装置。 In any one of Claims 1 thru | or 3 ,
2. The semiconductor device according to claim 1, wherein the oxide semiconductor film has a hydrogen concentration of less than 5 × 10 19 atoms / cm 3 .
前記酸化物半導体膜および前記金属酸化物膜は、同じ金属元素で構成されることを特徴とする半導体装置。 In any one of Claims 1 thru | or 4 ,
The oxide semiconductor film and the metal oxide film, wherein a is made of the same metal element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014184757A JP6383616B2 (en) | 2013-09-25 | 2014-09-11 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013198891 | 2013-09-25 | ||
| JP2013198891 | 2013-09-25 | ||
| JP2014184757A JP6383616B2 (en) | 2013-09-25 | 2014-09-11 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018147446A Division JP6542448B2 (en) | 2013-09-25 | 2018-08-06 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015088739A JP2015088739A (en) | 2015-05-07 |
| JP2015088739A5 true JP2015088739A5 (en) | 2017-10-19 |
| JP6383616B2 JP6383616B2 (en) | 2018-08-29 |
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Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014184757A Active JP6383616B2 (en) | 2013-09-25 | 2014-09-11 | Semiconductor device |
| JP2018147446A Active JP6542448B2 (en) | 2013-09-25 | 2018-08-06 | Semiconductor device |
| JP2019109670A Active JP6725729B2 (en) | 2013-09-25 | 2019-06-12 | Semiconductor device |
| JP2020109720A Active JP6967120B2 (en) | 2013-09-25 | 2020-06-25 | Semiconductor device |
| JP2021172811A Withdrawn JP2022009393A (en) | 2013-09-25 | 2021-10-22 | Semiconductor device |
| JP2023083176A Pending JP2023109902A (en) | 2013-09-25 | 2023-05-19 | Semiconductor device |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018147446A Active JP6542448B2 (en) | 2013-09-25 | 2018-08-06 | Semiconductor device |
| JP2019109670A Active JP6725729B2 (en) | 2013-09-25 | 2019-06-12 | Semiconductor device |
| JP2020109720A Active JP6967120B2 (en) | 2013-09-25 | 2020-06-25 | Semiconductor device |
| JP2021172811A Withdrawn JP2022009393A (en) | 2013-09-25 | 2021-10-22 | Semiconductor device |
| JP2023083176A Pending JP2023109902A (en) | 2013-09-25 | 2023-05-19 | Semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9905586B2 (en) |
| JP (6) | JP6383616B2 (en) |
| KR (2) | KR102281623B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7066672B2 (en) | 2019-12-19 | 2022-05-13 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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| JP6383616B2 (en) * | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2016027597A (en) * | 2013-12-06 | 2016-02-18 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US9318618B2 (en) * | 2013-12-27 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9397149B2 (en) * | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6488124B2 (en) * | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| KR102309629B1 (en) * | 2013-12-27 | 2021-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device |
| US20170288062A1 (en) * | 2014-09-02 | 2017-10-05 | Sharp Kabushiki Kaisha | Semiconductor device and method of producing semiconductor device |
| KR102462475B1 (en) | 2015-04-20 | 2022-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor devices and electronic devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7066672B2 (en) | 2019-12-19 | 2022-05-13 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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