JP2015088585A5 - - Google Patents

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Publication number
JP2015088585A5
JP2015088585A5 JP2013225212A JP2013225212A JP2015088585A5 JP 2015088585 A5 JP2015088585 A5 JP 2015088585A5 JP 2013225212 A JP2013225212 A JP 2013225212A JP 2013225212 A JP2013225212 A JP 2013225212A JP 2015088585 A5 JP2015088585 A5 JP 2015088585A5
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JP
Japan
Prior art keywords
insulating film
layer
wiring
wiring layer
region
Prior art date
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Application number
JP2013225212A
Other languages
English (en)
Japanese (ja)
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JP6396653B2 (ja
JP2015088585A (ja
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Publication date
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Priority claimed from JP2013225212A external-priority patent/JP6396653B2/ja
Priority to JP2013225212A priority Critical patent/JP6396653B2/ja
Priority to US14/516,806 priority patent/US9881868B2/en
Priority to TW103136519A priority patent/TWI643299B/zh
Priority to KR1020140145107A priority patent/KR20150050390A/ko
Priority to EP14190281.7A priority patent/EP2869343A3/en
Priority to CN201410598459.6A priority patent/CN104600052A/zh
Publication of JP2015088585A publication Critical patent/JP2015088585A/ja
Publication of JP2015088585A5 publication Critical patent/JP2015088585A5/ja
Priority to US15/696,395 priority patent/US20170365553A1/en
Publication of JP6396653B2 publication Critical patent/JP6396653B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013225212A 2013-10-30 2013-10-30 半導体装置 Active JP6396653B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013225212A JP6396653B2 (ja) 2013-10-30 2013-10-30 半導体装置
US14/516,806 US9881868B2 (en) 2013-10-30 2014-10-17 Semiconductor device
TW103136519A TWI643299B (zh) 2013-10-30 2014-10-22 半導體裝置
EP14190281.7A EP2869343A3 (en) 2013-10-30 2014-10-24 Integrated metal resistor
KR1020140145107A KR20150050390A (ko) 2013-10-30 2014-10-24 반도체 장치
CN201410598459.6A CN104600052A (zh) 2013-10-30 2014-10-30 半导体装置
US15/696,395 US20170365553A1 (en) 2013-10-30 2017-09-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013225212A JP6396653B2 (ja) 2013-10-30 2013-10-30 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018127015A Division JP2018186285A (ja) 2018-07-03 2018-07-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2015088585A JP2015088585A (ja) 2015-05-07
JP2015088585A5 true JP2015088585A5 (enExample) 2016-12-08
JP6396653B2 JP6396653B2 (ja) 2018-09-26

Family

ID=51799005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013225212A Active JP6396653B2 (ja) 2013-10-30 2013-10-30 半導体装置

Country Status (6)

Country Link
US (2) US9881868B2 (enExample)
EP (1) EP2869343A3 (enExample)
JP (1) JP6396653B2 (enExample)
KR (1) KR20150050390A (enExample)
CN (1) CN104600052A (enExample)
TW (1) TWI643299B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016181710A1 (ja) * 2015-05-13 2016-11-17 株式会社村田製作所 薄膜デバイス
DE102016104507A1 (de) * 2016-03-11 2017-09-14 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
WO2018008068A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 半導体装置の製造方法
US10164002B2 (en) * 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and layout method
JP6800815B2 (ja) * 2017-06-27 2020-12-16 ルネサスエレクトロニクス株式会社 半導体装置
JP7340948B2 (ja) * 2018-09-05 2023-09-08 ローム株式会社 電子部品
US12438080B2 (en) * 2018-09-28 2025-10-07 Intel Corporation And process for a precision resistor
KR102816786B1 (ko) 2019-06-21 2025-06-05 삼성전자주식회사 수직형 메모리 장치
WO2021177071A1 (ja) * 2020-03-03 2021-09-10 ローム株式会社 電子部品
JP2023160005A (ja) * 2022-04-21 2023-11-02 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140396A (ja) * 1992-10-23 1994-05-20 Yamaha Corp 半導体装置とその製法
JP2001015599A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置及びその製造方法
JP3715502B2 (ja) 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
JP2004303908A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100524963B1 (ko) * 2003-05-14 2005-10-31 삼성전자주식회사 금속 배선 및 금속 저항을 포함하는 반도체 소자 및 그제조 방법
DE10341059B4 (de) * 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
JP2005158803A (ja) * 2003-11-20 2005-06-16 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP4446771B2 (ja) * 2004-03-23 2010-04-07 株式会社リコー 半導体装置
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP2005347466A (ja) * 2004-06-02 2005-12-15 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
KR100735521B1 (ko) * 2005-10-19 2007-07-04 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2008130918A (ja) 2006-11-22 2008-06-05 Denso Corp 半導体装置及び半導体装置の製造方法
EP2351378B1 (en) * 2008-11-26 2020-08-19 Thin Film Electronics ASA Random delay generation for thin-film transistor based circuits
JP5601566B2 (ja) 2010-01-28 2014-10-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011253898A (ja) * 2010-06-01 2011-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及び製造方法
JP2012119383A (ja) * 2010-11-29 2012-06-21 Renesas Electronics Corp 半導体装置およびその製造方法
US8860181B2 (en) * 2012-03-07 2014-10-14 United Microelectronics Corp. Thin film resistor structure

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