CN104600052A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104600052A
CN104600052A CN201410598459.6A CN201410598459A CN104600052A CN 104600052 A CN104600052 A CN 104600052A CN 201410598459 A CN201410598459 A CN 201410598459A CN 104600052 A CN104600052 A CN 104600052A
Authority
CN
China
Prior art keywords
layer
wiring
metal
insulating film
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410598459.6A
Other languages
English (en)
Chinese (zh)
Inventor
德光成太
森隆弘
新田哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN104600052A publication Critical patent/CN104600052A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201410598459.6A 2013-10-30 2014-10-30 半导体装置 Pending CN104600052A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-225212 2013-10-30
JP2013225212A JP6396653B2 (ja) 2013-10-30 2013-10-30 半導体装置

Publications (1)

Publication Number Publication Date
CN104600052A true CN104600052A (zh) 2015-05-06

Family

ID=51799005

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410598459.6A Pending CN104600052A (zh) 2013-10-30 2014-10-30 半导体装置

Country Status (6)

Country Link
US (2) US9881868B2 (enExample)
EP (1) EP2869343A3 (enExample)
JP (1) JP6396653B2 (enExample)
KR (1) KR20150050390A (enExample)
CN (1) CN104600052A (enExample)
TW (1) TWI643299B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122903A (zh) * 2016-11-29 2018-06-05 台湾积体电路制造股份有限公司 半导体装置及布局方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016181710A1 (ja) * 2015-05-13 2016-11-17 株式会社村田製作所 薄膜デバイス
DE102016104507A1 (de) * 2016-03-11 2017-09-14 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
WO2018008068A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 半導体装置の製造方法
JP6800815B2 (ja) * 2017-06-27 2020-12-16 ルネサスエレクトロニクス株式会社 半導体装置
JP7340948B2 (ja) * 2018-09-05 2023-09-08 ローム株式会社 電子部品
US12438080B2 (en) * 2018-09-28 2025-10-07 Intel Corporation And process for a precision resistor
KR102816786B1 (ko) 2019-06-21 2025-06-05 삼성전자주식회사 수직형 메모리 장치
WO2021177071A1 (ja) * 2020-03-03 2021-09-10 ローム株式会社 電子部品
JP2023160005A (ja) * 2022-04-21 2023-11-02 ルネサスエレクトロニクス株式会社 半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
CN1542968A (zh) * 2003-03-31 2004-11-03 ���µ�����ҵ��ʽ���� 半导体器件及其制造方法
CN1551353A (zh) * 2003-05-14 2004-12-01 ���ǵ�����ʽ���� 包括金属互连和金属电阻器的半导体器件及其制造方法
CN1846296A (zh) * 2003-09-05 2006-10-11 因芬尼昂技术股份公司 具有电容器的集成电路装置及制造方法
US20070085165A1 (en) * 2005-10-19 2007-04-19 Samsung Electronics Co., Ltd. Capacitor, semiconductor device including the capacitor and methods of fabricating the same
CN1973361A (zh) * 2004-04-08 2007-05-30 微米技术有限公司 形成电触点的半导体处理方法和半导体结构
US20080122035A1 (en) * 2004-03-23 2008-05-29 Hirofumi Watanabe Semiconductor device
US20130234292A1 (en) * 2012-03-07 2013-09-12 Ming-Te Wei Thin film resistor structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140396A (ja) * 1992-10-23 1994-05-20 Yamaha Corp 半導体装置とその製法
JP2001015599A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置及びその製造方法
JP3715502B2 (ja) 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
JP2005158803A (ja) * 2003-11-20 2005-06-16 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2005347466A (ja) * 2004-06-02 2005-12-15 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2008130918A (ja) 2006-11-22 2008-06-05 Denso Corp 半導体装置及び半導体装置の製造方法
EP2351378B1 (en) * 2008-11-26 2020-08-19 Thin Film Electronics ASA Random delay generation for thin-film transistor based circuits
JP5601566B2 (ja) 2010-01-28 2014-10-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011253898A (ja) * 2010-06-01 2011-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及び製造方法
JP2012119383A (ja) * 2010-11-29 2012-06-21 Renesas Electronics Corp 半導体装置およびその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
CN1542968A (zh) * 2003-03-31 2004-11-03 ���µ�����ҵ��ʽ���� 半导体器件及其制造方法
CN1551353A (zh) * 2003-05-14 2004-12-01 ���ǵ�����ʽ���� 包括金属互连和金属电阻器的半导体器件及其制造方法
CN1846296A (zh) * 2003-09-05 2006-10-11 因芬尼昂技术股份公司 具有电容器的集成电路装置及制造方法
US20080122035A1 (en) * 2004-03-23 2008-05-29 Hirofumi Watanabe Semiconductor device
CN1973361A (zh) * 2004-04-08 2007-05-30 微米技术有限公司 形成电触点的半导体处理方法和半导体结构
US20070085165A1 (en) * 2005-10-19 2007-04-19 Samsung Electronics Co., Ltd. Capacitor, semiconductor device including the capacitor and methods of fabricating the same
US20130234292A1 (en) * 2012-03-07 2013-09-12 Ming-Te Wei Thin film resistor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122903A (zh) * 2016-11-29 2018-06-05 台湾积体电路制造股份有限公司 半导体装置及布局方法
CN108122903B (zh) * 2016-11-29 2021-11-02 台湾积体电路制造股份有限公司 半导体装置及布局方法

Also Published As

Publication number Publication date
US20170365553A1 (en) 2017-12-21
KR20150050390A (ko) 2015-05-08
US20150115410A1 (en) 2015-04-30
JP6396653B2 (ja) 2018-09-26
TW201523822A (zh) 2015-06-16
JP2015088585A (ja) 2015-05-07
EP2869343A2 (en) 2015-05-06
TWI643299B (zh) 2018-12-01
US9881868B2 (en) 2018-01-30
EP2869343A3 (en) 2015-09-02

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PB01 Publication
CB02 Change of applicant information

Address after: Tokyo, Japan

Applicant after: Renesas Electronics Corporation

Address before: Kanagawa

Applicant before: Renesas Electronics Corporation

COR Change of bibliographic data
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20200522

AD01 Patent right deemed abandoned