JP2015038738A5 - - Google Patents

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Publication number
JP2015038738A5
JP2015038738A5 JP2014180233A JP2014180233A JP2015038738A5 JP 2015038738 A5 JP2015038738 A5 JP 2015038738A5 JP 2014180233 A JP2014180233 A JP 2014180233A JP 2014180233 A JP2014180233 A JP 2014180233A JP 2015038738 A5 JP2015038738 A5 JP 2015038738A5
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JP
Japan
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mram
block
functional
state
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JP2014180233A
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Japanese (ja)
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JP6042386B2 (ja
JP2015038738A (ja
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Priority claimed from US12/235,933 external-priority patent/US8719610B2/en
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JP2014180233A 2008-09-23 2014-09-04 不揮発性磁気メモリを使用している低電力電子システム Active JP6042386B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/235,933 2008-09-23
US12/235,933 US8719610B2 (en) 2008-09-23 2008-09-23 Low power electronic system architecture using non-volatile magnetic memory

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011529126A Division JP5813508B2 (ja) 2008-09-23 2009-09-18 不揮発性磁気メモリを使用している低電力電子システム

Publications (3)

Publication Number Publication Date
JP2015038738A JP2015038738A (ja) 2015-02-26
JP2015038738A5 true JP2015038738A5 (enExample) 2015-08-06
JP6042386B2 JP6042386B2 (ja) 2016-12-14

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ID=41396150

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011529126A Active JP5813508B2 (ja) 2008-09-23 2009-09-18 不揮発性磁気メモリを使用している低電力電子システム
JP2014180233A Active JP6042386B2 (ja) 2008-09-23 2014-09-04 不揮発性磁気メモリを使用している低電力電子システム

Family Applications Before (1)

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JP2011529126A Active JP5813508B2 (ja) 2008-09-23 2009-09-18 不揮発性磁気メモリを使用している低電力電子システム

Country Status (12)

Country Link
US (1) US8719610B2 (enExample)
EP (1) EP2350768B1 (enExample)
JP (2) JP5813508B2 (enExample)
KR (1) KR101262105B1 (enExample)
CN (1) CN102160016B (enExample)
BR (1) BRPI0918960A2 (enExample)
CA (1) CA2736272C (enExample)
ES (1) ES2543360T3 (enExample)
MX (1) MX2011002703A (enExample)
RU (2) RU2011116190A (enExample)
TW (1) TWI413895B (enExample)
WO (1) WO2010039458A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5839474B2 (ja) * 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US20120254526A1 (en) * 2011-03-28 2012-10-04 Advanced Micro Devices, Inc. Routing, security and storage of sensitive data in random access memory (ram)
US9400545B2 (en) * 2011-12-22 2016-07-26 Intel Corporation Method, apparatus, and system for energy efficiency and energy conservation including autonomous hardware-based deep power down in devices
CN103456356A (zh) 2012-05-31 2013-12-18 三星电子株式会社 半导体存储器装置和相关的操作方法
WO2014018064A1 (en) * 2012-07-27 2014-01-30 Hewlett-Packard Development Company, L.P. Implementing a power off state in a computing device
US9244853B2 (en) * 2012-08-10 2016-01-26 Qualcomm Incorporated Tunable multi-tiered STT-MRAM cache for multi-core processors
KR102049265B1 (ko) * 2012-11-30 2019-11-28 삼성전자주식회사 최대절전 모드를 가지는 시스템 및 그 동작방법
US20150316971A1 (en) * 2014-05-02 2015-11-05 Avalanche Technology, Inc. Method and apparatus to reduce power consumption of mobile and portable devices with non-volatile memories
US9959124B1 (en) * 2014-09-26 2018-05-01 Apple Inc. Secure bypass of low-level configuration in reconfiguration of a computing system
CN106406493B (zh) * 2015-07-30 2020-04-28 华为技术有限公司 能降低功耗的电子装置及降低电子装置功耗的方法
TWI569129B (zh) 2015-12-01 2017-02-01 財團法人工業技術研究院 系統暫停方法、系統回復方法及應用其之電腦系統
US10341952B2 (en) * 2016-03-14 2019-07-02 Apple Inc. Low power LTE (LP-LTE) paging monitoring
FR3066667B1 (fr) * 2017-05-19 2019-06-07 Paragon Id " procede et systeme de transmission serie de donnees "
KR102813197B1 (ko) 2019-10-01 2025-05-27 삼성전자주식회사 비휘발성 메모리 장치의 초기화 제어 방법 및 비휘발성 메모리 장치를 포함하는 메모리 시스템
US11630502B2 (en) 2021-07-30 2023-04-18 Advanced Micro Devices, Inc. Hierarchical state save and restore for device with varying power states

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3959159B2 (ja) * 1997-09-04 2007-08-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 情報処理システム用拡張ユニット、拡張ユニットに搭載される情報処理システム、及び情報処理システムの制御方法
UA57812C2 (uk) * 1997-11-04 2003-07-15 Джорджія Тек Ресерч Корпорейшн Система та спосіб передачі цифрового відеосигналу та даних через канал зв'язку
US6438668B1 (en) * 1999-09-30 2002-08-20 Apple Computer, Inc. Method and apparatus for reducing power consumption in a digital processing system
US6449683B1 (en) * 1999-12-14 2002-09-10 Intel Corporation Using non-volatile memory for power management in a computer
CN1270323C (zh) 2001-06-19 2006-08-16 松下电器产业株式会社 磁性存储器的驱动方法
JP2003068864A (ja) * 2001-08-30 2003-03-07 Hitachi Ltd 半導体集積回路装置
US6732241B2 (en) * 2001-09-07 2004-05-04 Hewlett-Packard Development Company, L.P. Technique for migrating data between storage devices for reduced power consumption
JP2003115578A (ja) 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ
US6747318B1 (en) * 2001-12-13 2004-06-08 Lsi Logic Corporation Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides
JP2003209616A (ja) * 2002-01-15 2003-07-25 Fujitsu Ltd 半導体装置および携帯端末装置
TW533539B (en) * 2002-06-13 2003-05-21 Intelligent Sources Dev Corp A scaled MOSFET device and its fabricating method
US20080059785A1 (en) * 2002-08-14 2008-03-06 Ti Technologies Limited Method and apparatus for shutting down a computer system
US7313684B2 (en) * 2002-08-14 2007-12-25 T1 Technologies Limited Method and apparatus for booting a computer system
JP2004118921A (ja) * 2002-09-25 2004-04-15 Toshiba Corp 磁気ランダムアクセスメモリ
JP2004133969A (ja) * 2002-10-08 2004-04-30 Renesas Technology Corp 半導体装置
JP2006526831A (ja) 2003-06-03 2006-11-24 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 不揮発性メモリからのブート
JP4281421B2 (ja) 2003-06-06 2009-06-17 ソニー株式会社 情報処理システム及びその制御方法、並びにコンピュータ・プログラム
JP4095501B2 (ja) * 2003-06-25 2008-06-04 インターナショナル・ビジネス・マシーンズ・コーポレーション コンピュータ装置、無線アクセスポイント、無線ネットワークを介した電源投入方法、フレーム聴取方法、フレーム送信方法、およびプログラム
US7369815B2 (en) * 2003-09-19 2008-05-06 Qualcomm Incorporated Power collapse for a wireless terminal
US7521785B2 (en) * 2003-12-23 2009-04-21 Tessera, Inc. Packaged systems with MRAM
US7442583B2 (en) * 2004-12-17 2008-10-28 International Business Machines Corporation Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
WO2006080908A1 (en) 2005-01-25 2006-08-03 Chien-Chiang Chan A single chip having a magnetoresistive memory
US20100017637A1 (en) * 2005-05-25 2010-01-21 Nxp B.V. Portable electronic terminal and method therefor
US7262069B2 (en) * 2005-06-07 2007-08-28 Freescale Semiconductor, Inc. 3-D inductor and transformer devices in MRAM embedded integrated circuits
US7264985B2 (en) * 2005-08-31 2007-09-04 Freescale Semiconductor, Inc. Passive elements in MRAM embedded integrated circuits
US7755153B2 (en) 2006-01-13 2010-07-13 Macronix International Co. Ltd. Structure and method for a magnetic memory device with proximity writing
US7345912B2 (en) * 2006-06-01 2008-03-18 Grandis, Inc. Method and system for providing a magnetic memory structure utilizing spin transfer
US7379327B2 (en) * 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP2008210358A (ja) 2006-09-13 2008-09-11 Rohm Co Ltd データ処理装置及びこれに用いるデータ制御回路
US8019929B2 (en) * 2006-09-13 2011-09-13 Rohm Co., Ltd. Data processing apparatus and data control circuit for use therein
JP4685040B2 (ja) * 2007-01-24 2011-05-18 パナソニック株式会社 半導体集積回路及びその電源供給制御方法
JP2008198311A (ja) 2007-02-15 2008-08-28 Renesas Technology Corp 磁気記憶集積回路装置
JP2008218649A (ja) 2007-03-02 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法ならびに磁気メモリ素子
US7494846B2 (en) * 2007-03-09 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Design techniques for stacking identical memory dies
US8114345B2 (en) * 2008-02-08 2012-02-14 Ethicon Endo-Surgery, Inc. System and method of sterilizing an implantable medical device
US7872936B2 (en) * 2008-09-17 2011-01-18 Qimonda Ag System and method for packaged memory
KR101004676B1 (ko) 2008-12-05 2011-01-04 주식회사 하이닉스반도체 반도체 소자의 내부전압 발생기
US8423092B2 (en) * 2008-12-12 2013-04-16 Qualcomm Incorporated Power management in a mobile device
KR101912223B1 (ko) * 2011-08-16 2019-01-04 삼성전자주식회사 적층 자기 램 장치 및 이를 포함하는 메모리 시스템

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