CA2736272C - Low power electronic system using non-volatile magnetic memory - Google Patents

Low power electronic system using non-volatile magnetic memory Download PDF

Info

Publication number
CA2736272C
CA2736272C CA2736272A CA2736272A CA2736272C CA 2736272 C CA2736272 C CA 2736272C CA 2736272 A CA2736272 A CA 2736272A CA 2736272 A CA2736272 A CA 2736272A CA 2736272 C CA2736272 C CA 2736272C
Authority
CA
Canada
Prior art keywords
mram
functional
functional units
state
operational state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CA2736272A
Other languages
English (en)
French (fr)
Other versions
CA2736272A1 (en
Inventor
Matthew Michael NOWAK
Lew Chua-Eoan
Seung H. Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CA2736272A1 publication Critical patent/CA2736272A1/en
Application granted granted Critical
Publication of CA2736272C publication Critical patent/CA2736272C/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/325—Power saving in peripheral device
    • G06F1/3275—Power saving in memory, e.g. RAM, cache
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/50—Reducing energy consumption in communication networks in wire-line communication networks, e.g. low power modes or reduced link rate

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Power Sources (AREA)
  • Hall/Mr Elements (AREA)
  • Memory System (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CA2736272A 2008-09-23 2009-09-18 Low power electronic system using non-volatile magnetic memory Active CA2736272C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/235,933 2008-09-23
US12/235,933 US8719610B2 (en) 2008-09-23 2008-09-23 Low power electronic system architecture using non-volatile magnetic memory
PCT/US2009/057458 WO2010039458A1 (en) 2008-09-23 2009-09-18 Low power electronic system using non-volatile magnetic memory

Publications (2)

Publication Number Publication Date
CA2736272A1 CA2736272A1 (en) 2010-04-08
CA2736272C true CA2736272C (en) 2016-04-05

Family

ID=41396150

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2736272A Active CA2736272C (en) 2008-09-23 2009-09-18 Low power electronic system using non-volatile magnetic memory

Country Status (12)

Country Link
US (1) US8719610B2 (enExample)
EP (1) EP2350768B1 (enExample)
JP (2) JP5813508B2 (enExample)
KR (1) KR101262105B1 (enExample)
CN (1) CN102160016B (enExample)
BR (1) BRPI0918960A2 (enExample)
CA (1) CA2736272C (enExample)
ES (1) ES2543360T3 (enExample)
MX (1) MX2011002703A (enExample)
RU (2) RU2011116190A (enExample)
TW (1) TWI413895B (enExample)
WO (1) WO2010039458A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5839474B2 (ja) * 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
US20120254526A1 (en) * 2011-03-28 2012-10-04 Advanced Micro Devices, Inc. Routing, security and storage of sensitive data in random access memory (ram)
US9400545B2 (en) * 2011-12-22 2016-07-26 Intel Corporation Method, apparatus, and system for energy efficiency and energy conservation including autonomous hardware-based deep power down in devices
CN103456356A (zh) 2012-05-31 2013-12-18 三星电子株式会社 半导体存储器装置和相关的操作方法
WO2014018064A1 (en) * 2012-07-27 2014-01-30 Hewlett-Packard Development Company, L.P. Implementing a power off state in a computing device
US9244853B2 (en) * 2012-08-10 2016-01-26 Qualcomm Incorporated Tunable multi-tiered STT-MRAM cache for multi-core processors
KR102049265B1 (ko) * 2012-11-30 2019-11-28 삼성전자주식회사 최대절전 모드를 가지는 시스템 및 그 동작방법
US20150316971A1 (en) * 2014-05-02 2015-11-05 Avalanche Technology, Inc. Method and apparatus to reduce power consumption of mobile and portable devices with non-volatile memories
US9959124B1 (en) * 2014-09-26 2018-05-01 Apple Inc. Secure bypass of low-level configuration in reconfiguration of a computing system
CN106406493B (zh) * 2015-07-30 2020-04-28 华为技术有限公司 能降低功耗的电子装置及降低电子装置功耗的方法
TWI569129B (zh) 2015-12-01 2017-02-01 財團法人工業技術研究院 系統暫停方法、系統回復方法及應用其之電腦系統
US10341952B2 (en) * 2016-03-14 2019-07-02 Apple Inc. Low power LTE (LP-LTE) paging monitoring
FR3066667B1 (fr) * 2017-05-19 2019-06-07 Paragon Id " procede et systeme de transmission serie de donnees "
KR102813197B1 (ko) 2019-10-01 2025-05-27 삼성전자주식회사 비휘발성 메모리 장치의 초기화 제어 방법 및 비휘발성 메모리 장치를 포함하는 메모리 시스템
US11630502B2 (en) 2021-07-30 2023-04-18 Advanced Micro Devices, Inc. Hierarchical state save and restore for device with varying power states

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3959159B2 (ja) * 1997-09-04 2007-08-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 情報処理システム用拡張ユニット、拡張ユニットに搭載される情報処理システム、及び情報処理システムの制御方法
UA57812C2 (uk) * 1997-11-04 2003-07-15 Джорджія Тек Ресерч Корпорейшн Система та спосіб передачі цифрового відеосигналу та даних через канал зв'язку
US6438668B1 (en) * 1999-09-30 2002-08-20 Apple Computer, Inc. Method and apparatus for reducing power consumption in a digital processing system
US6449683B1 (en) * 1999-12-14 2002-09-10 Intel Corporation Using non-volatile memory for power management in a computer
CN1270323C (zh) 2001-06-19 2006-08-16 松下电器产业株式会社 磁性存储器的驱动方法
JP2003068864A (ja) * 2001-08-30 2003-03-07 Hitachi Ltd 半導体集積回路装置
US6732241B2 (en) * 2001-09-07 2004-05-04 Hewlett-Packard Development Company, L.P. Technique for migrating data between storage devices for reduced power consumption
JP2003115578A (ja) 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ
US6747318B1 (en) * 2001-12-13 2004-06-08 Lsi Logic Corporation Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxides
JP2003209616A (ja) * 2002-01-15 2003-07-25 Fujitsu Ltd 半導体装置および携帯端末装置
TW533539B (en) * 2002-06-13 2003-05-21 Intelligent Sources Dev Corp A scaled MOSFET device and its fabricating method
US20080059785A1 (en) * 2002-08-14 2008-03-06 Ti Technologies Limited Method and apparatus for shutting down a computer system
US7313684B2 (en) * 2002-08-14 2007-12-25 T1 Technologies Limited Method and apparatus for booting a computer system
JP2004118921A (ja) * 2002-09-25 2004-04-15 Toshiba Corp 磁気ランダムアクセスメモリ
JP2004133969A (ja) * 2002-10-08 2004-04-30 Renesas Technology Corp 半導体装置
JP2006526831A (ja) 2003-06-03 2006-11-24 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 不揮発性メモリからのブート
JP4281421B2 (ja) 2003-06-06 2009-06-17 ソニー株式会社 情報処理システム及びその制御方法、並びにコンピュータ・プログラム
JP4095501B2 (ja) * 2003-06-25 2008-06-04 インターナショナル・ビジネス・マシーンズ・コーポレーション コンピュータ装置、無線アクセスポイント、無線ネットワークを介した電源投入方法、フレーム聴取方法、フレーム送信方法、およびプログラム
US7369815B2 (en) * 2003-09-19 2008-05-06 Qualcomm Incorporated Power collapse for a wireless terminal
US7521785B2 (en) * 2003-12-23 2009-04-21 Tessera, Inc. Packaged systems with MRAM
US7442583B2 (en) * 2004-12-17 2008-10-28 International Business Machines Corporation Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
WO2006080908A1 (en) 2005-01-25 2006-08-03 Chien-Chiang Chan A single chip having a magnetoresistive memory
US20100017637A1 (en) * 2005-05-25 2010-01-21 Nxp B.V. Portable electronic terminal and method therefor
US7262069B2 (en) * 2005-06-07 2007-08-28 Freescale Semiconductor, Inc. 3-D inductor and transformer devices in MRAM embedded integrated circuits
US7264985B2 (en) * 2005-08-31 2007-09-04 Freescale Semiconductor, Inc. Passive elements in MRAM embedded integrated circuits
US7755153B2 (en) 2006-01-13 2010-07-13 Macronix International Co. Ltd. Structure and method for a magnetic memory device with proximity writing
US7345912B2 (en) * 2006-06-01 2008-03-18 Grandis, Inc. Method and system for providing a magnetic memory structure utilizing spin transfer
US7379327B2 (en) * 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP2008210358A (ja) 2006-09-13 2008-09-11 Rohm Co Ltd データ処理装置及びこれに用いるデータ制御回路
US8019929B2 (en) * 2006-09-13 2011-09-13 Rohm Co., Ltd. Data processing apparatus and data control circuit for use therein
JP4685040B2 (ja) * 2007-01-24 2011-05-18 パナソニック株式会社 半導体集積回路及びその電源供給制御方法
JP2008198311A (ja) 2007-02-15 2008-08-28 Renesas Technology Corp 磁気記憶集積回路装置
JP2008218649A (ja) 2007-03-02 2008-09-18 Renesas Technology Corp 半導体装置およびその製造方法ならびに磁気メモリ素子
US7494846B2 (en) * 2007-03-09 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Design techniques for stacking identical memory dies
US8114345B2 (en) * 2008-02-08 2012-02-14 Ethicon Endo-Surgery, Inc. System and method of sterilizing an implantable medical device
US7872936B2 (en) * 2008-09-17 2011-01-18 Qimonda Ag System and method for packaged memory
KR101004676B1 (ko) 2008-12-05 2011-01-04 주식회사 하이닉스반도체 반도체 소자의 내부전압 발생기
US8423092B2 (en) * 2008-12-12 2013-04-16 Qualcomm Incorporated Power management in a mobile device
KR101912223B1 (ko) * 2011-08-16 2019-01-04 삼성전자주식회사 적층 자기 램 장치 및 이를 포함하는 메모리 시스템

Also Published As

Publication number Publication date
JP6042386B2 (ja) 2016-12-14
EP2350768A1 (en) 2011-08-03
JP2015038738A (ja) 2015-02-26
ES2543360T3 (es) 2015-08-18
KR101262105B1 (ko) 2013-05-14
RU2616171C2 (ru) 2017-04-12
MX2011002703A (es) 2011-04-21
EP2350768B1 (en) 2015-05-13
KR20110082000A (ko) 2011-07-15
TW201027323A (en) 2010-07-16
RU2014115184A (ru) 2015-11-10
RU2011116190A (ru) 2012-10-27
US8719610B2 (en) 2014-05-06
JP5813508B2 (ja) 2015-11-17
TWI413895B (zh) 2013-11-01
CA2736272A1 (en) 2010-04-08
US20100077244A1 (en) 2010-03-25
JP2012504278A (ja) 2012-02-16
CN102160016B (zh) 2015-04-01
BRPI0918960A2 (pt) 2016-07-05
WO2010039458A1 (en) 2010-04-08
CN102160016A (zh) 2011-08-17

Similar Documents

Publication Publication Date Title
CA2736272C (en) Low power electronic system using non-volatile magnetic memory
US7961502B2 (en) Non-volatile state retention latch
CN101303888B (zh) 存储电路和用于将电源应用到存储电路的方法
US7924650B2 (en) Dynamically controlled voltage regulator for a memory
KR101636324B1 (ko) 파워 게이팅 장치
CN108735246B (zh) 集成电路及用于操作有多个存储器单元的集成电路的方法
US10297296B2 (en) Storage device, method for operating storage device, semiconductor device, electronic component, and electronic device
Jung et al. Zero-sleep-leakage flip-flop circuit with conditional-storing memristor retention latch
Zianbetov et al. Non-volatility for ultra-low power asynchronous circuits in hybrid cmos/magnetic technology
Fujita et al. Novel nonvolatile memory hierarchies to realize" normally-off mobile processors"
CN118136069A (zh) Tfet-sram单元电路及其封装方法、阵列电路和电子设备
TW201106355A (en) Leakage reduction in memory design
CN102569643B (zh) 一种优化嵌入式stt-ram性能与硬件耗费的异构设计方法
TW201033801A (en) Internal charge transfer for circuits
Dong et al. Stacking magnetic random access memory atop microprocessors: an architecture-level evaluation
CN201048048Y (zh) Sata接口的电子硬盘
Monga et al. Design of an MTJ/CMOS-Based Asynchronous System for Ultra-Low Power Energy Autonomous Applications
EP3540738B1 (en) Multi-bit non-volatile flip-flop
NATSUI et al. Emerging trends in MTJ-based nonvolatile logic circuits toward a revolution in computer architecture
Hanyu et al. Challenge of nonvolatile logic LSI using MTJ-based logic-in-memory architecture
Kawahara et al. SPRAM (SPin-transfer torque RAM) technology for green IT world
Fujita et al. Novel STT-MRAM-based last level caches for high performance processors using normally-off architectures
EP3200192A1 (en) Non-volatile non-shadow flip-flop

Legal Events

Date Code Title Description
EEER Examination request