JP2014527254A5 - - Google Patents

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Publication number
JP2014527254A5
JP2014527254A5 JP2014527335A JP2014527335A JP2014527254A5 JP 2014527254 A5 JP2014527254 A5 JP 2014527254A5 JP 2014527335 A JP2014527335 A JP 2014527335A JP 2014527335 A JP2014527335 A JP 2014527335A JP 2014527254 A5 JP2014527254 A5 JP 2014527254A5
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JP
Japan
Prior art keywords
memory
threshold voltage
cell
programmed
data
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Pending
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JP2014527335A
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English (en)
Japanese (ja)
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JP2014527254A (ja
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Priority claimed from US13/219,439 external-priority patent/US9030870B2/en
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Publication of JP2014527254A publication Critical patent/JP2014527254A/ja
Publication of JP2014527254A5 publication Critical patent/JP2014527254A5/ja
Pending legal-status Critical Current

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JP2014527335A 2011-08-26 2012-08-24 メモリ内の閾値電圧補償 Pending JP2014527254A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/219,439 US9030870B2 (en) 2011-08-26 2011-08-26 Threshold voltage compensation in a multilevel memory
US13/219,439 2011-08-26
PCT/US2012/052333 WO2013032928A1 (en) 2011-08-26 2012-08-24 Threshold voltage compensation in a memory

Publications (2)

Publication Number Publication Date
JP2014527254A JP2014527254A (ja) 2014-10-09
JP2014527254A5 true JP2014527254A5 (enExample) 2015-10-08

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JP2014527335A Pending JP2014527254A (ja) 2011-08-26 2012-08-24 メモリ内の閾値電圧補償

Country Status (7)

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US (4) US9030870B2 (enExample)
EP (2) EP2748821B1 (enExample)
JP (1) JP2014527254A (enExample)
KR (2) KR102318742B1 (enExample)
CN (1) CN103843068B (enExample)
TW (1) TWI512736B (enExample)
WO (1) WO2013032928A1 (enExample)

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