JP2014523392A5 - - Google Patents
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- Publication number
- JP2014523392A5 JP2014523392A5 JP2014518619A JP2014518619A JP2014523392A5 JP 2014523392 A5 JP2014523392 A5 JP 2014523392A5 JP 2014518619 A JP2014518619 A JP 2014518619A JP 2014518619 A JP2014518619 A JP 2014518619A JP 2014523392 A5 JP2014523392 A5 JP 2014523392A5
- Authority
- JP
- Japan
- Prior art keywords
- transition metal
- nitride
- synthesizing
- reactor
- metal alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052723 transition metal Inorganic materials 0.000 claims description 65
- 150000003624 transition metals Chemical class 0.000 claims description 55
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 32
- 150000004767 nitrides Chemical class 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 26
- 239000000956 alloy Substances 0.000 claims description 26
- 230000002194 synthesizing effect Effects 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- -1 transition metal nitride Chemical class 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 claims description 2
- 239000006227 byproduct Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161501656P | 2011-06-27 | 2011-06-27 | |
| US61/501,656 | 2011-06-27 | ||
| US201161505758P | 2011-07-08 | 2011-07-08 | |
| US61/505,758 | 2011-07-08 | ||
| PCT/US2012/042689 WO2013003074A1 (en) | 2011-06-27 | 2012-06-15 | Synthesis method of transition metal nitride and transition metal nitride |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016081753A Division JP2016130213A (ja) | 2011-06-27 | 2016-04-15 | 遷移金属窒化物および遷移金属窒化物の合成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014523392A JP2014523392A (ja) | 2014-09-11 |
| JP2014523392A5 true JP2014523392A5 (https=) | 2015-07-30 |
| JP6089032B2 JP6089032B2 (ja) | 2017-03-01 |
Family
ID=46395731
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014518619A Expired - Fee Related JP6089032B2 (ja) | 2011-06-27 | 2012-06-15 | 遷移金属窒化物および遷移金属窒化物の合成方法 |
| JP2014518618A Expired - Fee Related JP6095657B2 (ja) | 2011-06-27 | 2012-06-15 | 遷移金属窒化物を含有する電極を有するウルトラキャパシタ |
| JP2016081753A Withdrawn JP2016130213A (ja) | 2011-06-27 | 2016-04-15 | 遷移金属窒化物および遷移金属窒化物の合成方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014518618A Expired - Fee Related JP6095657B2 (ja) | 2011-06-27 | 2012-06-15 | 遷移金属窒化物を含有する電極を有するウルトラキャパシタ |
| JP2016081753A Withdrawn JP2016130213A (ja) | 2011-06-27 | 2016-04-15 | 遷移金属窒化物および遷移金属窒化物の合成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8971018B2 (https=) |
| EP (2) | EP2724356B1 (https=) |
| JP (3) | JP6089032B2 (https=) |
| KR (2) | KR20140068852A (https=) |
| WO (2) | WO2013003073A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140068852A (ko) | 2011-06-27 | 2014-06-09 | 식스포인트 머터리얼즈 인코퍼레이티드 | 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터 |
| EP2771276A4 (en) * | 2011-10-24 | 2015-06-24 | Univ California | USE OF ALKALINE METALS TO REDUCE UNREFERENCES IN A GROUP III NITRIDE CRYSTAL |
| KR101554675B1 (ko) | 2013-11-28 | 2015-09-22 | 한국화학연구원 | 질화물 형광체 분말 및 이의 제조방법 |
| CN105621377B (zh) * | 2014-10-28 | 2017-11-24 | 中国石油化工股份有限公司 | 基于金属有机骨架材料的氮化铁的制备方法 |
| US9822006B2 (en) * | 2015-04-09 | 2017-11-21 | The Boeing Company | Method to form Fe16N2 |
| DE102016215709A1 (de) * | 2015-08-28 | 2017-03-02 | Tsubakimoto Chain Co. | Kettenkomponente und Kette |
| JP6712798B2 (ja) * | 2016-01-29 | 2020-06-24 | 国立大学法人東京工業大学 | 窒化銅半導体およびその製造方法 |
| JP6657042B2 (ja) * | 2016-08-09 | 2020-03-04 | 太平洋セメント株式会社 | Ｔａ５Ｎ６の製造方法 |
| WO2018061644A1 (ja) * | 2016-09-30 | 2018-04-05 | 富士フイルム株式会社 | 金属窒化物含有粒子、分散組成物、硬化性組成物、硬化膜、及びそれらの製造方法、並びにカラーフィルタ、固体撮像素子、固体撮像装置、赤外線センサ |
| JP2021504116A (ja) * | 2017-11-29 | 2021-02-15 | コリア インスティチュート オブ エナジー リサーチ | ガス窒化又は液体窒化処理されたコアシェル触媒の製造方法 |
| CN109182887B (zh) * | 2018-11-18 | 2020-03-10 | 湖南众鑫新材料科技股份有限公司 | 一种氮化钒铁合金的制备方法 |
| CN112919428B (zh) * | 2019-12-06 | 2023-09-05 | 中国科学院过程工程研究所 | 一种氮化钒微球及其制备方法和用途 |
| CN110817813B (zh) * | 2019-12-19 | 2022-11-04 | 湖南众鑫新材料科技股份有限公司 | 一种纳米晶氮化钒粉体的制备方法 |
| JP7326183B2 (ja) * | 2020-02-13 | 2023-08-15 | 太平洋セメント株式会社 | 窒化ランタン |
| CN112058299B (zh) * | 2020-09-10 | 2021-11-16 | 中山大学 | 多壳层镍基氮化物纳米复合材料及其制备方法与应用 |
| EP3975213B1 (en) | 2020-09-28 | 2024-12-11 | Jozef Stefan Institute | Method for manufacturing hybrid binder-free electrodes for electrochemical supercapacitors |
| CN112475302B (zh) * | 2020-11-16 | 2023-02-24 | 安徽省瑞峻粉末金属材料有限公司 | 一种超细纳米晶vn合金粉末的制备方法 |
| CN113135553B (zh) * | 2021-04-22 | 2022-11-04 | 陕西科技大学 | 一种氮化钨包覆氮化钒粉体及其制备方法和应用 |
| CN114180539B (zh) * | 2021-12-24 | 2023-08-15 | 广东省科学院半导体研究所 | 纳米多孔氮化钒材料及其制备方法和储能器件 |
| CN114974937B (zh) * | 2022-06-29 | 2022-11-25 | 哈尔滨理工大学 | 一种铁掺杂四氧化三钴/氮化钴异质结构纳米线电极材料的制备方法和应用 |
| CN115537872B (zh) * | 2022-10-11 | 2023-12-15 | 重庆大学 | 一种双掺杂高效电解水催化剂及其制备方法和应用 |
| CN118179554A (zh) * | 2022-12-13 | 2024-06-14 | 中国科学院大连化学物理研究所 | 一种复合催化剂及其制备方法和应用 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS54145400A (en) * | 1978-05-08 | 1979-11-13 | Ube Ind Ltd | Production of metal nitride powder |
| US4515763A (en) | 1981-07-15 | 1985-05-07 | Board Of Trustees Of Leland Stanford Jr. Univeristy | High specific surface area carbides and nitrides |
| US4851206A (en) * | 1981-07-15 | 1989-07-25 | The Board Of Trustees Of The Leland Stanford Junior University, Stanford University | Methods and compostions involving high specific surface area carbides and nitrides |
| US5680292A (en) | 1994-12-12 | 1997-10-21 | T/J Technologies, Inc. | High surface area nitride, carbide and boride electrodes and methods of fabrication thereof |
| CA2311132C (en) | 1997-10-30 | 2004-12-07 | Sumitomo Electric Industries, Ltd. | Gan single crystalline substrate and method of producing the same |
| JP2001522133A (ja) * | 1997-10-30 | 2001-11-13 | ティ／ジェイ テクノロジーズ インコーポレイテッド | 遷移金属系セラミック材料及びその製品 |
| US6168694B1 (en) * | 1999-02-04 | 2001-01-02 | Chemat Technology, Inc. | Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications |
| US6743947B1 (en) | 1999-05-10 | 2004-06-01 | The United States Of America As Represented By The Secretary Of The Army | Electrochemically stable onium salts and electrolytes containing such for electrochemical capacitors |
| JP4693351B2 (ja) | 2001-10-26 | 2011-06-01 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | エピタキシャル成長用基板 |
| JP4663319B2 (ja) | 2002-06-26 | 2011-04-06 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物バルク単結晶の製造方法 |
| US6924403B2 (en) * | 2002-06-26 | 2005-08-02 | E. I. Du Pont De Nemours And Company | Synthesis of hexafluoropropylene |
| KR101088991B1 (ko) | 2002-12-11 | 2011-12-01 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
| WO2004061923A1 (en) | 2002-12-27 | 2004-07-22 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| JP4433696B2 (ja) * | 2003-06-17 | 2010-03-17 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
| JP2005183556A (ja) * | 2003-12-18 | 2005-07-07 | Sii Micro Parts Ltd | 平板型電気化学セル |
| PL371405A1 (pl) | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
| EP1917382A4 (en) | 2005-07-08 | 2009-09-02 | Univ California | METHOD FOR GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AUTOCLAVE |
| EP1977029B1 (en) | 2005-12-20 | 2020-07-22 | SLT Technologies, Inc. | Crystalline composition |
| US20070234946A1 (en) | 2006-04-07 | 2007-10-11 | Tadao Hashimoto | Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals |
| WO2007149487A2 (en) | 2006-06-21 | 2007-12-27 | The Regents Of The University Of California | Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth |
| JP5196118B2 (ja) * | 2006-09-14 | 2013-05-15 | 信越化学工業株式会社 | 非水電解質二次電池及びその製造方法 |
| AU2007319213B2 (en) | 2006-11-15 | 2014-06-12 | Basf Se | Electric double layer capacitance device |
| US8562868B2 (en) | 2008-05-28 | 2013-10-22 | University of Pittsburgh—of the Commonwealth System of Higher Education | Ternary metal transition metal non-oxide nano-particles, methods and applications thereof |
| JP2010040480A (ja) * | 2008-08-08 | 2010-02-18 | Oita Univ | 電極用材料、電極、リチウムイオン電池、電気二重層キャパシタ、電極用材料の製造方法 |
| KR101024940B1 (ko) * | 2009-02-03 | 2011-03-31 | 삼성전기주식회사 | 표면 산화된 전이금속질화물 에어로젤을 이용한 하이브리드수퍼커패시터 |
| WO2011084787A1 (en) | 2009-12-21 | 2011-07-14 | Ioxus, Inc. | Improved energy storage in edlcs by utilizing a dielectric layer |
| JP2010100526A (ja) * | 2010-01-27 | 2010-05-06 | Lucelabo:Kk | 遷移金属窒化物の製造方法 |
| US9384905B2 (en) * | 2010-10-12 | 2016-07-05 | The Regents Of The University Of Michigan, University Of Michigan Office Of Technology Transfer | High performance transition metal carbide and nitride and boride based asymmetric supercapacitors |
| KR20140068852A (ko) | 2011-06-27 | 2014-06-09 | 식스포인트 머터리얼즈 인코퍼레이티드 | 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터 |
-
2012
- 2012-06-15 KR KR1020147001026A patent/KR20140068852A/ko not_active Ceased
- 2012-06-15 US US13/524,439 patent/US8971018B2/en active Active
- 2012-06-15 JP JP2014518619A patent/JP6089032B2/ja not_active Expired - Fee Related
- 2012-06-15 JP JP2014518618A patent/JP6095657B2/ja not_active Expired - Fee Related
- 2012-06-15 KR KR1020147001024A patent/KR20140053100A/ko not_active Ceased
- 2012-06-15 US US13/524,399 patent/US8920762B2/en active Active
- 2012-06-15 WO PCT/US2012/042679 patent/WO2013003073A1/en not_active Ceased
- 2012-06-15 WO PCT/US2012/042689 patent/WO2013003074A1/en not_active Ceased
- 2012-06-15 EP EP12730334.5A patent/EP2724356B1/en not_active Not-in-force
- 2012-06-15 EP EP12731245.2A patent/EP2723680A1/en not_active Withdrawn
-
2016
- 2016-04-15 JP JP2016081753A patent/JP2016130213A/ja not_active Withdrawn
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