JP2014517805A - 未研磨ガラスウェハ、未研磨ガラスウェハを使用して半導体ウェハを薄厚化する薄厚化システム及び方法 - Google Patents
未研磨ガラスウェハ、未研磨ガラスウェハを使用して半導体ウェハを薄厚化する薄厚化システム及び方法 Download PDFInfo
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- JULDKEYYPIYHLQ-UHFFFAOYSA-N 3-hydroxy-2-[[2-[(3-hydroxy-4-oxopyran-2-yl)methyl-methylamino]ethyl-methylamino]methyl]pyran-4-one Chemical compound O1C=CC(=O)C(O)=C1CN(C)CCN(C)CC=1OC=CC(=O)C=1O JULDKEYYPIYHLQ-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24—GRINDING; POLISHING
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- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
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- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/30604—Chemical etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
1.サイズ−3D IC 110の設置面積は、異なる技術を用いてパッケージ封止される同様の集積回路(IC)と比較してずっと小さい。図2(先行技術)は、長さが4インチ(10.16cm)であり、かつ従来の回路基板に搭載される32ギガバイト(GB)標準ICを8個実装する設計202を示し、そして各ICが、55マイクロメートル(μm)の厚さ、及び1ミリメートル(mm)の幅である8個のICを有する市販の32GB 3D(3次元)積層メモリ204の側面図を示している。
I.全体厚さバラツキ(Total Thickness Variation:TTV)−薄厚化対象のシリコンウェハのTTVは、ガラスキャリアウェハのTTVのみと同程度に良好である。シリコンウェハに関する要求が、更なる薄厚化に向かっているので、TTVは2.0μm未満にする必要がある。図3(先行技術)を参照するに、上側IC層304と下側IC層306との間の配線302状態の悪化をもたらした大きなTTVを有する例示的な3D IC構造300を示す模式図が図示されている。図4(先行技術)を参照するに、固定されていない(自由状態の)ガラスウェハ402の全表面408の最大厚さ(Tmax)上昇量404と最小厚さ(Tmin)上昇量406との間の差として定義されるTTVを説明するために使用されるガラスウェハ402の模式図が図示されている。
1.熱膨張係数(CTE)−−ガラスウェハ700は、約3.0ppm/℃〜3.5ppm/℃の範囲のCTEを有することができる。この場合、ガラスウェハ700及び半導体ウェハのCTEが一致する、または互いに少なくとも近接して一致し、この状態は、薄厚化プロセス中に、ガラスウェハ700が半導体ウェハに接合され、そして複合構造が熱サイクルを受ける可能性があるので望ましい場合が多い。ガラスウェハ700を当該ガラスウェハが約3.0ppm/℃〜約3.5ppm/℃の範囲のCTEを有するように形成するために使用することができる例示的な組成は:SiO2:64.0〜71.0;Al2O3:9.0〜12.0;B2O3:7.0〜12.0;MgO:1.0〜3.0;CaO:6.0〜11.5;SrO:0〜2.0;BaO:0〜0.1の公称組成(酸化物基準のモル百分率表示)を有し、この場合:(a)1.00≦Σ[RO]/[Al2O3]≦1.25の関係があり、式中、[Al2O3]は、Al2O3のモル百分率であり、そしてΣ[RO]は、MgO,CaO,SrO,及びBaOのモル百分率の合計に等しく、そして(b)ガラスは、以下の組成物特性:(i)酸化物基準で、ガラスが最大0.05モル百分率のSb2O3を含む;及び(ii)酸化物基準で、ガラスが最小0.01モル百分率のSnO2を含むという(i)及び(ii)のうちの少なくとも1つの組成物特性を有する(以後、この組成を“composition no.1(組成番号1)”と表記する)。
1.極めて低いコスト−研磨工程は、フュージョン法を用いてガラスウェハ700を製造する場合には必要ではない。
a.シリコンと一致するCTE
b.低アルカリ金属−Na濃度が、ホウケイ酸ガラスから形成される従来の研磨済みガラスウェハよりも約2桁低い。
“SHEET GLASS FORMING APPARATUS(板ガラス成形装置)”と題する国際公開第03/014032号パンフレット
“SHEET WIDTH CONTROL FOR OVERFLOW DOWNDRAW SHEET GLASS FORMING APPARATUS(オーバーフローダウンドロー板ガラス成形装置における板幅の制御)”と題する国際公開第05/081888号パンフレット
“METHOD FOR DETECTING CHANGE IN SHAPE OF A MOVING SUBSTRATE(動いている基板の形状変化を検出する方法)”と題する国際公開第09/070262号パンフレット
“APPARATUS AND METHOD FOR DRAWING A RIBBON OF GLASS(ガラスリボンを引き延ばす装置及び方法)”と題する米国特許出願公開第2010/0212360A1号明細書
“APPARATUS AND METHOD FOR CONTROLLING THICKNESS OF A FLOWING RIBBON OF MOLTEN GLASS(流下溶融ガラスリボンの厚さを制御する装置及び方法)”と題する米国特許出願公開第2011/0289969A1号明細書
A.筺体1602内の圧力(遮熱板1610と遮熱板1610との間の開口)の制御:筺体1602の内部及び外部に対する全ての圧力変動または大きな圧力差を、遮熱板1610と遮熱板1610との間の開口を調整することにより制御し、そして最小限に抑えることができ、この場合、圧力変動が生じると、これによって、熱移動が不均一となってしまい、これにより今度は、板ガラス1402の反り、及び厚さバラツキが大きくなる。
104 フリップチップ
106 積層チップ
108 パッケージ−オン−パッケージ
110 3次元集積回路(3D IC)
202 設計
204 3D積層メモリ
300 3D IC構造
302 配線
304 上側IC層
306 下側IC層
402,502,602 ガラスウェハ
404,708 最大厚さ(Tmin)上昇量
406,710 最小厚さ(Tmax)上昇量
408 全表面
504,506 最大距離
508,714 最高位点
510,716 最小二乗焦平面
512,720 最低位点
604 直線
700 未研磨ガラスウェハ
702 本体
704 未研磨の第1表面
706 未研磨の第2表面
708,710,712,714,716,718,720 凹凸
900,1000a,1000b 研磨済みガラスウェハ
902,1002a,1002b 第1面
904 第2面
1000a 第1ガラスウェハ
1000b 第2ガラスウェハ
1102 第1シリコンキャリアウェハ
1104 第2シリコンキャリアウェハ
1106 第3シリコンキャリアウェハ
1200 薄厚化する方法
1202 シリコンウェハ、半導体ウェハ
1202’ 薄厚化シリコンウェハ
1204,1212,1216,1218,1220,1224 工程
1206 第1表面
1208 回路チップ
1210 第2表面
1214 接合接着剤
1222 高精度孔
1226 ダイシングテープ、ラミネートテープ
1300 薄厚化システム
1302,1602 筺体
1304 支持台、真空チャック、静電チャック
1306 薄厚化装置
1400 ガラス製造システム
1402 未研磨板ガラス
1410 溶融槽
1412,1612,1620 矢印
1413 耐火性供給管
1415 清澄槽、清澄管
1418 フュージョンドロー成形装置
1420 撹拌槽、撹拌室
1425 供給槽、ボウル
1426 溶融ガラス
1427 接続管
1428 供給容器
1429 下降管
1430 アイソパイプ、成形装置本体
1435 引延ばしロールアセンブリ
1436 供給口
1437 樋
1438’,1438” 主側壁外面
1439 下頂部
1440 移動定盤(アンビル)
1502 供給管
1504’,1504” 内部側壁
1506 底面
1508 端部
1510 楔形/ウェッジ形本体
1512’,1512” 頂部稜線
1604 加熱素子
1606 内部壁、マッフル
1610 遮熱板
1614 冷却部材
1616 面
1618 冷媒供給管
A,B,C 最小二乗値
CTE 熱膨張係数
TTV 全体厚さバラツキ
θ 水平方向からの角度変位量
Claims (10)
- 互いに略平行である未研磨の第1表面(704)及び未研磨の第2表面(706)を含む本体(702)を備えた未研磨ガラスウェハ(700)において、
前記本体は、約6.0未満であるウェハ品質指標を有し、前記ウェハ品質指標は、マイクロメートルで表わされる全体厚さバラツキに、マイクロメートルで表わされる反りの10分の1を加算した値に等しく、前記全体厚さバラツキは、前記本体を断面で見たときの前記未研磨の第1表面と前記未研磨の第2表面との間の最大厚さ上昇量(708)と最小厚さ上昇量(710)との差であり、そして前記反りは、前記本体の形状に適用される最高位点(714)と最小二乗焦平面(716)との間の最大距離(712)の絶対値、及び前記本体の前記形状に適用される最低位点(720)と前記最小二乗焦平面との間の最大距離(718)の絶対値の合計であり、前記最高位点及び前記最低位点は共に、前記本体の同じ未研磨表面から知ることができる、
未研磨ガラスウェハ(700)。 - 前記本体は、前記全体厚さバラツキが約2.0μm未満であり、かつ前記反りが約30μm未満である状態で約0.7mmの厚さを有する、請求項1に記載の未研磨ガラスウェハ。
- 前記本体は、約3.0ppm/℃〜約12.0ppm/℃の範囲の熱膨張係数を有する、請求項1に記載の未研磨ガラスウェハ。
- 前記本体は、約2.0μm未満の全体厚さバラツキを有する、請求項1に記載の未研磨ガラスウェハ。
- 前記本体は、約60μm未満の反りを有する、請求項1に記載の未研磨ガラスウェハ。
- 前記本体は、約0.4mm〜1.1mmの範囲に収まる厚さを有する、請求項1に記載の未研磨ガラスウェハ。
- 前記未研磨の第1表面は、約5ÅRMS未満の表面粗さを有する、請求項1に記載の未研磨ガラスウェハ。
- シリコンウェハ(1202)を、該シリコンウェハが未研磨ガラスウェハ(700)に仮接合されている状態で薄厚化する薄厚化システム(1300)であって、該薄厚化システム(1300)は:
筺体(1302)と、
該筺体内に設けられる支持台(1304)であって、該支持台(1304)の上に、互いに対して仮接合接着剤(1214)で接合される前記未研磨ガラスウェハ及び前記シリコンウェハが載置される、前記支持台(1304)と、
を備え、
前記シリコンウェハは、回路チップ(1208)が第1表面に形成された状態の第1表面(1206)と、そして互いに略平行である第2表面(1210)と、を有し、
前記未研磨ガラスウェハは本体(702)を有し、該本体(702)は、互いに対して略平行である未研磨の第1表面(704)及び未研磨の第2表面(706)を含み、前記本体は、約6.0未満であるウェハ品質指標を有し、前記ウェハ品質指標は、マイクロメートルで表わされる全体厚さバラツキに、マイクロメートルで表わされる反りの10分の1を加算した値に等しく、前記全体厚さバラツキは、前記本体を断面で見たときの前記未研磨の第1表面と前記未研磨の第2表面との間の最大厚さ上昇量(708)と最小厚さ上昇量(710)との差であり、そして前記反りは、と前記本体の形状に適用される最高位点(714)最小二乗焦平面(716)との間の最大距離(712)の絶対値、及び前記本体の前記形状に適用される最低位点(720)と前記最小二乗焦平面との間の最大距離(718)の絶対値の合計であり、前記最高位点及び前記最低位点は共に、前記本体の同じ表面から知ることができ、前記薄厚化システムは更に、
前記筺体内に設けられる薄厚化装置(1306)を備え、該薄厚化装置(1306)は、前記シリコンウェハの前記第2表面を、前記シリコンウェハが前記未研磨ガラスウェハに仮接合されている状態で薄厚化するために適する、
薄厚化システム(1300)。 - 未研磨ガラスウェハ(700)を製造する方法であって、該方法は:
材料塊を溶融させ、そして溶融ガラス(1426)を形成する工程と、
前記溶融ガラスを流入させ、そして板ガラス(1402)を成形する成形装置(1430)を提供する工程と、
前記成形装置の周りに配置される筺体(1602)を備える装置を提供する工程であって、前記筺体が、開口を成形装置本体の下方に備えることにより、前記成形装置から流下している溶融ガラス流が、前記筺体から流れ出すことができ、前記装置は更に、前記成形装置の下方に配置され、かつ離間配置されることにより前記開口を形成する遮熱板群(1610)を備え、該遮熱板群は、前記成形装置からの放射熱損失を最小限に抑えるように構成され、各遮熱板は、前記溶融ガラス流に対して移動させることができ、前記装置は更に、前記遮熱板群に隣接配置される冷却部材群(1614)を備えるものであり、
前記筺体内の圧力を制御する工程、
前記冷却部材群を制御する工程、および
前記遮熱板群の間の前記開口を最小にして、前記板ガラスへの熱移動の均一性を制御する工程、を含む、前記筺体を備える装置を提供する工程と、
前記板ガラスを引き延ばす工程と、
前記板ガラスを割断して異なる板ガラスにする工程と、
前記異なる板ガラスのうちの少なくとも1枚の板ガラスを切断して複数の未研磨ガラスウェハにする工程と、
を含む、方法。 - 各未研磨ガラスウェハは:
互いに略平行である未研磨の第1表面(704)及び未研磨の第2表面(706)を含む本体(702)を備え、
前記本体は、約6.0未満であるウェハ品質指標を有し、前記ウェハ品質指標は、全体厚さバラツキ(μm)+[反り(μm)/10]に等しく、前記全体厚さバラツキは、前記本体を断面で見たときの前記未研磨の第1表面と前記未研磨の第2表面との間の最大厚さ上昇量(708)と最小厚さ上昇量(710)との差であり、そして前記反りは、前記本体の形状に適用される最高位点(714)と最小二乗焦平面(716)との間の最大距離(712)の絶対値、及び前記本体の前記形状に適用される最低位点(720)と前記最小二乗焦平面との間の最大距離(718)の絶対値の合計であり、前記最高位点及び前記最低位点は共に、前記本体の同じ表面から知ることができる、
請求項9に記載の方法。
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US9227295B2 (en) | 2016-01-05 |
US20120302063A1 (en) | 2012-11-29 |
TW201303989A (zh) | 2013-01-16 |
TWI570797B (zh) | 2017-02-11 |
WO2012166446A1 (en) | 2012-12-06 |
JP6049147B2 (ja) | 2016-12-21 |
CN103597578A (zh) | 2014-02-19 |
CN103597578B (zh) | 2017-03-08 |
EP2715780A1 (en) | 2014-04-09 |
EP2715780A4 (en) | 2014-11-19 |
US9573835B2 (en) | 2017-02-21 |
US20160096767A1 (en) | 2016-04-07 |
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KR101921777B1 (ko) | 2018-11-23 |
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