JP2014515553A - オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法 - Google Patents
オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法 Download PDFInfo
- Publication number
- JP2014515553A JP2014515553A JP2014510671A JP2014510671A JP2014515553A JP 2014515553 A JP2014515553 A JP 2014515553A JP 2014510671 A JP2014510671 A JP 2014510671A JP 2014510671 A JP2014510671 A JP 2014510671A JP 2014515553 A JP2014515553 A JP 2014515553A
- Authority
- JP
- Japan
- Prior art keywords
- optoelectronic
- connection support
- cavity
- optoelectronic device
- optoelectronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 203
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000003566 sealing material Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000004642 Polyimide Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 125000005462 imide group Chemical group 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- UGQZLDXDWSPAOM-UHFFFAOYSA-N pyrrolo[3,4-f]isoindole-1,3,5,7-tetrone Chemical compound C1=C2C(=O)NC(=O)C2=CC2=C1C(=O)NC2=O UGQZLDXDWSPAOM-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
−ビームを受信するため、又はビームを形成するために設けられているオプトエレクトロニクス構成素子と、
−内部にオプトエレクトロニクス構成素子が配置されている空洞部を有しているフレームと、
−オプトエレクトロニクス構成素子が固定されている接続支持体と、
−空洞部を覆い、且つ、ビームのためのビーム通過面を形成するカバーと、
を備えており、オプトエレクトロニクス構成素子からビーム通過面までのビーム路はオプトエレクトロニクス構成素子のための封止材料を有していない。
Claims (15)
- オプトエレクトロニクス装置(1)において、
ビームを受信又は形成するオプトエレクトロニクス構成素子(21)と、
前記オプトエレクトロニクス構成素子が内部に配置される空洞部(51)を有しているフレーム(4)と、
前記オプトエレクトロニクス構成素子が固定されている接続支持体(3)と、
前記空洞部を覆い、且つ、前記ビームのためのビーム通過面(10)を形成するカバー(45)と、
を備えており、
前記オプトエレクトロニクス構成素子から前記ビーム通過面までのビーム路は前記オプトエレクトロニクス構成素子のための封止材料を有していないことを特徴とする、オプトエレクトロニクス構成素子。 - 前記接続支持体は、前記フレームの前記カバー側とは反対側に配置されている、請求項1に記載のオプトエレクトロニクス装置。
- 前記オプトエレクトロニクス装置は、前記空洞部と周囲との間の空気交換のための開口部(33)を有している、請求項1又は2に記載のオプトエレクトロニクス装置。
- 前記接続支持体は回路基板として構成されており、且つ前記接続支持体は前記開口部を有している、請求項3に記載のオプトエレクトロニクス装置。
- 前記オプトエレクトロニクス装置は、前記ビーム通過面側とは反対側の面に、外部との電気的な接触接続のためのコンタクト面(31)を有しており、該コンタクト面は前記接続支持体を貫通するスルーコンタクト(35)を介して、前記オプトエレクトロニクス構成素子と電気的に接続されている、請求項1乃至4のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記カバーは、ポリイミドを含有しているフィルムとして形成されている、請求項1乃至5のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記フレーム、前記接続支持体及び前記カバーは少なくとも一つの方向に沿って面一で終端している、請求項1乃至6のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記空洞部は、前記カバーから前記オプトエレクトロニクス構成素子へと延びる方向において、アンダーカットされた領域(63)を有している、請求項1乃至7のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記空洞部は、前記カバーから前記オプトエレクトロニクス構成素子の方向において少なくとも部分的に先細りされている領域(61)を有している、請求項1乃至8のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記オプトエレクトロニクス装置は別のオプトエレクトロニクス構成素子(22)を有しており、該別のオプトエレクトロニクス構成素子(22)は前記オプトエレクトロニクス構成素子と共に一つの発光体・検出器ペアを形成している、請求項1乃至9のいずれか一項に記載のオプトエレクトロニクス装置。
- 前記別のオプトエレクトロニクス構成素子は別の空洞部(52)内に配置されており、該別の空洞部は前記空洞部とは間隔を空けて配置されている、請求項10に記載のオプトエレクトロニクス装置。
- 前記オプトエレクトロニクス装置は近接センサとして、及び/又は、周囲光センサとして構成されている、請求項1乃至11のいずれか一項に記載のオプトエレクトロニクス装置。
- 複数のオプトエレクトロニクス装置を製造する方法において、
a)接続支持体結合体(30)を準備するステップと、
b)複数のオプトエレクトロニクス構成素子(21,22,23)を前記接続支持体結合体上に配置するステップと、
c)前記複数のオプトエレクトロニクス構成素子がそれぞれ一つの空洞部内に配置されるように、複数の空洞部(51,52)を備えているフレーム素子(40)を前記接続支持体結合体上に位置決めするステップと、
d)前記フレーム素子上にカバー(45)を配置するステップと、
e)各接続支持体(3)上に少なくとも一つのオプトエレクトロニクス構成素子と、空洞部を備えているフレームが配置されているように、前記接続支持体結合体を複数の接続支持体(3)に切断するステップと、
を備えていることを特徴とする、方法。 - 前記ステップe)において、前記カバー、前記フレーム素子及び前記接続支持体結合体を切断する、請求項13に記載の方法。
- 請求項1乃至12のいずれか一項に記載の装置を製造する、請求項13又は14に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2011/058186 WO2012155984A1 (de) | 2011-05-19 | 2011-05-19 | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014515553A true JP2014515553A (ja) | 2014-06-30 |
JP5946520B2 JP5946520B2 (ja) | 2016-07-06 |
Family
ID=44626594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014510671A Active JP5946520B2 (ja) | 2011-05-19 | 2011-05-19 | オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9281301B2 (ja) |
JP (1) | JP5946520B2 (ja) |
CN (1) | CN103548148B (ja) |
DE (1) | DE112011105262A5 (ja) |
WO (1) | WO2012155984A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011105374B4 (de) * | 2011-06-22 | 2021-12-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
DE102012107794B4 (de) | 2012-08-23 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Vorrichtung |
US9496247B2 (en) * | 2013-08-26 | 2016-11-15 | Optiz, Inc. | Integrated camera module and method of making same |
DE102013110355A1 (de) | 2013-09-19 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Leiterrahmenverbunds |
TWI619208B (zh) * | 2014-03-31 | 2018-03-21 | 具聚光結構之光學模組的封裝方法 | |
DE102014206995A1 (de) * | 2014-04-11 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen |
KR102221599B1 (ko) * | 2014-06-18 | 2021-03-02 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US9687181B2 (en) * | 2014-09-17 | 2017-06-27 | International Business Machines Corporation | Semiconductor device to be embedded within a contact lens |
TWI587003B (zh) * | 2014-10-15 | 2017-06-11 | 昇佳電子股份有限公司 | 內建光障元件之封裝結構、形成光學封裝結構之方法與所形成之光學封裝結構 |
JP2017041467A (ja) * | 2015-08-17 | 2017-02-23 | ローム株式会社 | 光半導体装置 |
TWI713173B (zh) * | 2016-01-20 | 2020-12-11 | 新加坡商海特根微光學公司 | 具有流體可滲透通道的光電模組及其製造方法 |
US11069667B2 (en) * | 2016-03-31 | 2021-07-20 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
EP3486955A4 (en) * | 2016-07-14 | 2020-03-11 | KYOCERA Corporation | HOUSING FOR PHOTOSENSORS, PHOTOSENSOR DEVICE AND ELECTRONIC MODULE |
DE102016113514A1 (de) * | 2016-07-21 | 2018-01-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
FR3055509B1 (fr) | 2016-08-26 | 2018-09-21 | Stmicroelectronics (Grenoble 2) Sas | Boitier electronique comprenant un capot a rainure |
CN107785357A (zh) * | 2016-08-26 | 2018-03-09 | 意法半导体研发(深圳)有限公司 | 用于光学传感器封装体的防粘胶溢出帽盖 |
US10475937B1 (en) * | 2017-03-30 | 2019-11-12 | Maxim Integrated Products, Inc. | Optical sensor packages employing cloaking layers |
DE102017109083A1 (de) | 2017-04-27 | 2018-10-31 | Osram Gmbh | Beleuchtungsvorrichtung und Verfahren zur Herstellung einer Beleuchtungsvorrichtung |
US11073615B2 (en) * | 2018-08-20 | 2021-07-27 | Lite-On Singapore Pte. Ltd. | Proximity sensor module with two sensors |
DE102018121732A1 (de) * | 2018-09-06 | 2020-03-12 | Osram Opto Semiconductors Gmbh | Elektronisches bauelement |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04340771A (ja) * | 1991-05-17 | 1992-11-27 | Minolta Camera Co Ltd | 受光素子 |
JP2003152123A (ja) * | 2001-11-16 | 2003-05-23 | Sony Corp | 半導体装置 |
JP2003218398A (ja) * | 2002-01-18 | 2003-07-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003347601A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
JP2006222358A (ja) * | 2005-02-14 | 2006-08-24 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
JP2006278743A (ja) * | 2005-03-29 | 2006-10-12 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2007227935A (ja) * | 2006-02-24 | 2007-09-06 | Osram Opto Semiconductors Gmbh | 電子モジュールおよび電子モジュールをカプセル化する方法 |
JP2007234977A (ja) * | 2006-03-02 | 2007-09-13 | Citizen Electronics Co Ltd | 半導体パッケージ |
JP2008021987A (ja) * | 2006-06-16 | 2008-01-31 | Shinko Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法及び基板 |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
JP2008098516A (ja) * | 2006-10-13 | 2008-04-24 | Sanyo Electric Co Ltd | 光電変換装置 |
JP2009123921A (ja) * | 2007-11-15 | 2009-06-04 | Doshisha | 波長選択フィルタ付き受光センサ |
JP2010258237A (ja) * | 2009-04-24 | 2010-11-11 | Panasonic Electric Works Co Ltd | 反射型光電センサ |
JP2011060788A (ja) * | 2009-09-04 | 2011-03-24 | Sharp Corp | 近接照度センサおよびその製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01133752A (ja) | 1987-11-19 | 1989-05-25 | Ricoh Co Ltd | インクジェット記録ヘッド |
JPH01133752U (ja) * | 1988-03-07 | 1989-09-12 | ||
JPH05283549A (ja) | 1992-03-31 | 1993-10-29 | Toshiba Corp | ガラス封止型セラミック容器の製造方法 |
US5340993A (en) * | 1993-04-30 | 1994-08-23 | Motorola, Inc. | Optocoupler package wth integral voltage isolation barrier |
JP3408987B2 (ja) * | 1999-03-30 | 2003-05-19 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
US7075112B2 (en) * | 2001-01-31 | 2006-07-11 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
US6962834B2 (en) | 2002-03-22 | 2005-11-08 | Stark David H | Wafer-level hermetic micro-device packages |
US20040038442A1 (en) | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
JP3782406B2 (ja) * | 2003-07-01 | 2006-06-07 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
US7141884B2 (en) * | 2003-07-03 | 2006-11-28 | Matsushita Electric Industrial Co., Ltd. | Module with a built-in semiconductor and method for producing the same |
JP4598432B2 (ja) | 2004-05-12 | 2010-12-15 | 浜松ホトニクス株式会社 | 電子部品及びその製造方法 |
JP4659421B2 (ja) * | 2004-09-30 | 2011-03-30 | 株式会社トクヤマ | 発光素子収納用パッケージの製造方法 |
KR101154801B1 (ko) * | 2004-12-03 | 2012-07-03 | 엔지케이 스파크 플러그 캄파니 리미티드 | 세라믹 기판 및 발광 소자 수납용 세라믹 패키지 |
US7282788B2 (en) * | 2005-09-14 | 2007-10-16 | Sigurd Microelectronics Corp. | Image sensing chip package structure |
DE102006060408A1 (de) | 2006-12-20 | 2008-06-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung korrosionsbeständiger Metalloberflächen und Reflektor mit metallischer Oberfläche |
US20080217709A1 (en) * | 2007-03-07 | 2008-09-11 | Knowles Electronics, Llc | Mems package having at least one port and manufacturing method thereof |
JP5082542B2 (ja) * | 2007-03-29 | 2012-11-28 | ソニー株式会社 | 固体撮像装置 |
KR101360294B1 (ko) * | 2008-05-21 | 2014-02-11 | 광주과학기술원 | 반사형 광학 센서장치 |
JP5883646B2 (ja) * | 2008-10-17 | 2016-03-15 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 発光装置の製造方法 |
JP5283549B2 (ja) * | 2009-03-27 | 2013-09-04 | 本田技研工業株式会社 | 放電制御装置 |
DE102009019412A1 (de) * | 2009-04-29 | 2010-11-04 | Fa. Austria Technologie & Systemtechnik Ag | Verfahren zur Herstellung einer Leiterplatte mit LEDs und gedruckter Reflektorfläche sowie Leiterplatte, hergestellt nach dem Verfahren |
US20110062470A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Reduced angular emission cone illumination leds |
CN103477242B (zh) | 2011-04-15 | 2015-08-12 | 欧司朗光电半导体有限公司 | 光电子装置 |
-
2011
- 2011-05-19 CN CN201180070971.8A patent/CN103548148B/zh active Active
- 2011-05-19 DE DE112011105262.6T patent/DE112011105262A5/de active Pending
- 2011-05-19 US US14/118,367 patent/US9281301B2/en active Active
- 2011-05-19 JP JP2014510671A patent/JP5946520B2/ja active Active
- 2011-05-19 WO PCT/EP2011/058186 patent/WO2012155984A1/de active Application Filing
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04340771A (ja) * | 1991-05-17 | 1992-11-27 | Minolta Camera Co Ltd | 受光素子 |
JP2003152123A (ja) * | 2001-11-16 | 2003-05-23 | Sony Corp | 半導体装置 |
JP2003218398A (ja) * | 2002-01-18 | 2003-07-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003347601A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
JP2006222358A (ja) * | 2005-02-14 | 2006-08-24 | Ngk Spark Plug Co Ltd | 発光素子実装用配線基板 |
JP2006278743A (ja) * | 2005-03-29 | 2006-10-12 | Konica Minolta Holdings Inc | 固体撮像装置 |
JP2007227935A (ja) * | 2006-02-24 | 2007-09-06 | Osram Opto Semiconductors Gmbh | 電子モジュールおよび電子モジュールをカプセル化する方法 |
JP2007234977A (ja) * | 2006-03-02 | 2007-09-13 | Citizen Electronics Co Ltd | 半導体パッケージ |
JP2008021987A (ja) * | 2006-06-16 | 2008-01-31 | Shinko Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法及び基板 |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
JP2008098516A (ja) * | 2006-10-13 | 2008-04-24 | Sanyo Electric Co Ltd | 光電変換装置 |
JP2009123921A (ja) * | 2007-11-15 | 2009-06-04 | Doshisha | 波長選択フィルタ付き受光センサ |
JP2010258237A (ja) * | 2009-04-24 | 2010-11-11 | Panasonic Electric Works Co Ltd | 反射型光電センサ |
JP2011060788A (ja) * | 2009-09-04 | 2011-03-24 | Sharp Corp | 近接照度センサおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112011105262A5 (de) | 2014-02-27 |
US20140191253A1 (en) | 2014-07-10 |
JP5946520B2 (ja) | 2016-07-06 |
CN103548148B (zh) | 2016-09-28 |
CN103548148A (zh) | 2014-01-29 |
WO2012155984A1 (de) | 2012-11-22 |
US9281301B2 (en) | 2016-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5946520B2 (ja) | オプトエレクトロニクス装置及びオプトエレクトロニクス装置の製造方法 | |
CN105683726B (zh) | 光检测装置 | |
JP6392654B2 (ja) | 光センサ装置 | |
JP6347051B2 (ja) | デバイス | |
JP5287906B2 (ja) | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 | |
US10539461B2 (en) | Spectroscope | |
JP5114069B2 (ja) | 電子モジュールおよび電子モジュールをカプセル化する方法 | |
JP2013506985A (ja) | 横向きあるいは上向きデバイス配置のラミネートリードレスキャリアパッケージングを備えた光電子デバイス | |
US10408677B2 (en) | Spectroscope, and spectroscope production method | |
US11604093B2 (en) | Spectrometer device and method for producing a spectrometer device | |
JP2006017712A (ja) | ガス濃度を分光学的に測定するためのガスセンサモジュール | |
JP2011223040A (ja) | 光電モジュールおよびその製造方法 | |
KR20120039023A (ko) | 발광 다이오드 그리고 발광 다이오드를 제조하기 위한 방법 | |
US7064403B2 (en) | Chip assembly in a premold housing | |
US20220236230A1 (en) | Photoacoustic gas sensor device | |
CN103035658B (zh) | 光传感器模块和光传感器 | |
CN212434647U (zh) | 光学芯片封装结构及光电装置 | |
JP5333641B2 (ja) | 赤外線温度センサ、電子機器、および赤外線温度センサの製造方法 | |
EP1986236A1 (fr) | Procédé pour la réalisation d'un module optoélectronique, et module optoélectronique obtenu par le procédé | |
JP2015521803A (ja) | 電気部品および該電気部品の製造方法 | |
US20220412801A1 (en) | Spectral module and method for manufacturing spectral module | |
TWI840809B (zh) | 光檢測裝置 | |
KR20220029523A (ko) | 광음향 센서 및 관련 생산 방법 | |
CN116053271A (zh) | 光电芯片封装结构和反射式光电编码器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140901 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141112 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150803 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151102 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160422 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160516 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160531 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5946520 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |