CN107785357A - 用于光学传感器封装体的防粘胶溢出帽盖 - Google Patents
用于光学传感器封装体的防粘胶溢出帽盖 Download PDFInfo
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- CN107785357A CN107785357A CN201610728139.7A CN201610728139A CN107785357A CN 107785357 A CN107785357 A CN 107785357A CN 201610728139 A CN201610728139 A CN 201610728139A CN 107785357 A CN107785357 A CN 107785357A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/46—Indirect determination of position data
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
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- H—ELECTRICITY
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
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- H—ELECTRICITY
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Computer Networks & Wireless Communication (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (23)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610728139.7A CN107785357A (zh) | 2016-08-26 | 2016-08-26 | 用于光学传感器封装体的防粘胶溢出帽盖 |
US15/340,216 US10038108B2 (en) | 2016-08-26 | 2016-11-01 | Glue bleeding prevention cap for optical sensor packages |
US16/027,647 US10355146B2 (en) | 2016-08-26 | 2018-07-05 | Glue bleeding prevention cap for optical sensor packages |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610728139.7A CN107785357A (zh) | 2016-08-26 | 2016-08-26 | 用于光学传感器封装体的防粘胶溢出帽盖 |
Publications (1)
Publication Number | Publication Date |
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CN107785357A true CN107785357A (zh) | 2018-03-09 |
Family
ID=61243512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610728139.7A Pending CN107785357A (zh) | 2016-08-26 | 2016-08-26 | 用于光学传感器封装体的防粘胶溢出帽盖 |
Country Status (2)
Country | Link |
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US (2) | US10038108B2 (zh) |
CN (1) | CN107785357A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108598248A (zh) * | 2018-06-13 | 2018-09-28 | 广东恒润光电有限公司 | 一种具有量子点膜片的新型发光二极管结构 |
US20190259741A1 (en) * | 2015-04-20 | 2019-08-22 | Advanced Semiconductor Engineering, Inc. | Optical sensor module and method for manufacturing the same |
CN114125099A (zh) * | 2021-09-15 | 2022-03-01 | 荣耀终端有限公司 | 终端设备 |
CN116722007A (zh) * | 2023-08-10 | 2023-09-08 | 青岛泰睿思微电子有限公司 | 基于混合异质基板材料的光学封装结构 |
Families Citing this family (15)
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US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
CN109073704A (zh) | 2017-03-02 | 2018-12-21 | 罗斯蒙特公司 | 用于局部放电的趋势函数 |
US10475937B1 (en) * | 2017-03-30 | 2019-11-12 | Maxim Integrated Products, Inc. | Optical sensor packages employing cloaking layers |
US11067639B2 (en) | 2017-11-03 | 2021-07-20 | Rosemount Inc. | Trending functions for predicting the health of electric power assets |
US10422860B2 (en) | 2017-11-20 | 2019-09-24 | Stmicroelectronics Pte Ltd | Proximity sensor with integrated ALS |
KR102005351B1 (ko) * | 2017-12-07 | 2019-07-31 | 삼성전자주식회사 | 팬-아웃 센서 패키지 |
FR3075465B1 (fr) | 2017-12-15 | 2020-03-27 | Stmicroelectronics (Grenoble 2) Sas | Couvercle de boitier de circuit electronique |
FR3075466B1 (fr) * | 2017-12-15 | 2020-05-29 | Stmicroelectronics (Grenoble 2) Sas | Couvercle de boitier de circuit electronique |
US11038077B2 (en) * | 2018-03-05 | 2021-06-15 | Xintec Inc. | Chip package and manufacturing method thereof |
US10794736B2 (en) * | 2018-03-15 | 2020-10-06 | Rosemount Inc. | Elimination of floating potential when mounting wireless sensors to insulated conductors |
FR3080219B1 (fr) * | 2018-04-13 | 2021-03-05 | St Microelectronics Grenoble 2 | Dispositif electronique comprenant des puces electroniques |
US11181570B2 (en) | 2018-06-15 | 2021-11-23 | Rosemount Inc. | Partial discharge synthesizer |
EP3620813A1 (en) * | 2018-09-04 | 2020-03-11 | ams AG | Optical sensor arrangement, device and method of manufacturing an optical sensor arrangement |
US10833531B2 (en) | 2018-10-02 | 2020-11-10 | Rosemount Inc. | Electric power generation or distribution asset monitoring |
US11313895B2 (en) | 2019-09-24 | 2022-04-26 | Rosemount Inc. | Antenna connectivity with shielded twisted pair cable |
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CN205319149U (zh) * | 2015-12-28 | 2016-06-15 | 意法半导体有限公司 | 半导体封装体 |
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CN206282858U (zh) * | 2016-08-26 | 2017-06-27 | 意法半导体研发(深圳)有限公司 | 光学传感器封装体和帽盖 |
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WO2012098981A1 (ja) * | 2011-01-20 | 2012-07-26 | ローム株式会社 | 光学装置 |
US9281301B2 (en) * | 2011-05-19 | 2016-03-08 | Osram Opto Semiconductors Gmbh | Optoelectronic device and method for producing optoelectronic devices |
TWI585911B (zh) * | 2015-08-12 | 2017-06-01 | 精材科技股份有限公司 | 一種感應器封裝體及其製造方法 |
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2016
- 2016-08-26 CN CN201610728139.7A patent/CN107785357A/zh active Pending
- 2016-11-01 US US15/340,216 patent/US10038108B2/en active Active
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2018
- 2018-07-05 US US16/027,647 patent/US10355146B2/en active Active
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US20110204233A1 (en) * | 2009-06-30 | 2011-08-25 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Attenuating or Blocking Layer in Optical Proximity Sensor |
US20150226839A1 (en) * | 2012-09-27 | 2015-08-13 | Osram Opto Semiconductors Gmbh | Optoelectronic device |
CN105679753A (zh) * | 2014-11-20 | 2016-06-15 | 日月光半导体制造股份有限公司 | 光学模块、其制造方法及电子装置 |
CN105890630A (zh) * | 2014-12-24 | 2016-08-24 | 意法半导体有限公司 | 接近传感器帽 |
CN105895625A (zh) * | 2014-12-25 | 2016-08-24 | 意法半导体有限公司 | 用于邻近传感器的晶片级封装 |
CN205319149U (zh) * | 2015-12-28 | 2016-06-15 | 意法半导体有限公司 | 半导体封装体 |
CN206282858U (zh) * | 2016-08-26 | 2017-06-27 | 意法半导体研发(深圳)有限公司 | 光学传感器封装体和帽盖 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190259741A1 (en) * | 2015-04-20 | 2019-08-22 | Advanced Semiconductor Engineering, Inc. | Optical sensor module and method for manufacturing the same |
US11257799B2 (en) * | 2015-04-20 | 2022-02-22 | Advanced Semiconductor Engineering, Inc. | Optical sensor module and method for manufacturing the same |
CN108598248A (zh) * | 2018-06-13 | 2018-09-28 | 广东恒润光电有限公司 | 一种具有量子点膜片的新型发光二极管结构 |
CN114125099A (zh) * | 2021-09-15 | 2022-03-01 | 荣耀终端有限公司 | 终端设备 |
CN116722007A (zh) * | 2023-08-10 | 2023-09-08 | 青岛泰睿思微电子有限公司 | 基于混合异质基板材料的光学封装结构 |
CN116722007B (zh) * | 2023-08-10 | 2023-12-08 | 青岛泰睿思微电子有限公司 | 基于混合异质基板材料的光学封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US10355146B2 (en) | 2019-07-16 |
US20180062003A1 (en) | 2018-03-01 |
US20180331236A1 (en) | 2018-11-15 |
US10038108B2 (en) | 2018-07-31 |
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