CN106601727B - 包模接近度传感器及相关联的方法 - Google Patents

包模接近度传感器及相关联的方法 Download PDF

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CN106601727B
CN106601727B CN201610193296.2A CN201610193296A CN106601727B CN 106601727 B CN106601727 B CN 106601727B CN 201610193296 A CN201610193296 A CN 201610193296A CN 106601727 B CN106601727 B CN 106601727B
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L·埃拉尔
D·加尼
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STMicroelectronics SA
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Abstract

一种电子器件包括衬底、耦接至该衬底的光传感器以及耦接至该衬底的光发射器。透镜与该光发射器对准并且包括上表面和围绕该上表面的包封流出停止槽。包封材料耦接至该衬底并且包括贯穿其的分别与该光传感器和该透镜对准的第一包封开口和第二包封开口。

Description

包模接近度传感器及相关联的方法
技术领域
本发明涉及接近度传感器领域，并且更具体地涉及包模接近度传感器及相关联的方法。
背景技术
接近度传感器通常在光检测器与光发射器之间具有隔离以正确地操作。一种方法是电子封装体，该电子封装体包括衬底、配备有光检测器的第一集成电路以及配备有光发射器的第二集成电路，其中，这两个集成电路被固定在衬底上。不透明盖件被键合到衬底上以凭借分隔室的存在使这些集成电路中的每一个集成电路光学地隔离开。该盖件可以具有两个分离的开口，该两个分离的开口被形成为面向两个上述的光学元件并且配备有透明的保护板。
接近度传感器的这个已知的电子封装体使用了衬底并且该特别规格的盖件的制造涉及许多安装步骤和关于集成电路的外部电气连接难点，并且相比于集成电路的大小具有更大的尺寸。
另一种方法在接近度传感器的制造过程中使用模制，其被认为是低成本的但是透镜圆顶形状通常要求与接近度传感器的最终电子封装体的顶部平齐或更低以便在操作或安装工艺过程中保护透镜。此外，模制工艺要求平整的表面，但是当还需要防止透镜被黑色模制零件污染时透镜圆顶形状将对其进行阻止。
发明内容
一种电子器件可以包括衬底、耦接至衬底的光传感器、耦接至衬底的光发射器以及与光发射器对准的透镜。透镜可以包括上表面和围绕上表面的包封流出停止槽。此外，包封材料可以耦接至衬底，其中，该包封材料具有贯穿其的分别与光传感器和透镜对准的第一包封开口和第二包封开口。
在具体实施例中，电子器件可以包括电路板，该电路板具有第一面和第二面以及贯穿其的第一板开口和第二板开口。集成电路(IC)可以耦接至电路板的第一面并且包括分别与间隔开的第一开口和第二开口对准的第一光接收区域和第二光接收区域。此外，包封材料可以耦接至电路板的第二面并且包括贯穿其的分别与第一板开口和第二板开口对准的第一包封开口和第二包封开口。透镜可以固定于第二板开口和第二包封开口之内并且具有弯曲的上表面和围绕该弯曲的上表面的包封流出停止槽。包封流出停止槽可以从透镜的多个最外部边缘向内间隔开，并且可以被配置成用于在包模工艺过程中采集树脂的溢出。
电子器件还可以包括在第一包封开口之内的透明体。包封材料、透明体和透镜的多个最上部部分可以彼此对准平齐并且可以看起来像在测试中易于操作并且包括表面安装技术(SMT)的标准平面栅格阵列(LGA)。
此外，第一和第二包封开口可以是间隔关系，并且它们之间的包封材料可以是光学不透明的以形成挡光板。电子器件还可以包括与第二包封开口相关联并被引入透镜的光发射器。IC可以包括在其上与第一和第二光接收区域以及光发射器协同操作以限定接近度传感器的电路。此外，多个触点可以由包围所述IC的所述电路板的第一面承载。
另一个方面涉及一种用于制造电子器件的方法，该方法包括形成电路板，该电路板具有第一面和第二面并且具有贯穿其的第一板开口和第二板开口。该方法还可以包括将集成电路(IC)耦接至电路板的第一面并且包括分别与第一板开口和第二板开口对准的第一光接收区域和第二光接收区域。此外，该方法可以包括在电路板的第二面上形成包封材料并且具有贯穿其的分别与第一板开口和第二板开口对准的第一包封开口和第二包封开口，并且其中，透镜在第二板开口和第二包封开口之内，该透镜具有弯曲的上表面和围绕该弯曲的上表面的包封流出停止槽。该方法还可以包括耦接在第一包封开口之内的透明体，其中，包封材料、透明体和透镜的多个最上部部分彼此对准平齐。该方法可以包括将光发射器与第二包封开口进行关联并将其引入透镜，并且将IC耦接至第一和第二光接收区域以及光发射器以限定接近度传感器。
附图说明
图1是在电子器件包模之前的正视图；
图2是在图1的电子器件包模之后的正视图；
图3是图2的电子器件的透镜和包封流出停止槽的详细视图；并且
图4是图2的电子器件的顶视图。
具体实施方式
现在将参照附图在下文中更为全面地描述本发明，在附图中示出了本发明的优选实施例。然而，本发明可以用许多不同的形式体现，并且不应当被解释为受到在此所列出的实施例的限制。相反，提供这些实施例以便本披露将是彻底和完整的，并且将向本领域技术人员充分地传达本发明的范围。贯穿全文相同的数字指代相同的元件。
例如，如在图1中所展示的，电子器件10可以包括衬底(例如，电路板)12。如本领域技术人员将认识到的，电路板12包括相反的第一面14和第二面16并且可以包括电绝缘材料。电路板12的集成电气连接网络18被配置成用于进行从电路板12的一个面到另一个面的电气连接。
电路板12还包括第一板开口20和第二板开口22，这些开口直接通过电路板12从第一面14到达第二面16。
集成电路24可以通过多个电气连接元件26耦接至电路板12的第一面14，这确保了集成电路24与电气连接网络18之间的电气连接。集成电路24还可以包括分别与间隔开的第一板开口20和第二板开口22对准的第一和第二光接收区域(或光传感器)28和30。
现在又参照图2，电子器件10可以包括耦接至电路板12的第二面16的包封材料32并且包括贯穿其的第一包封开口34和第二包封开口36，这两个开口分别与第一板开口20和第二板开口22对准。第一包封开口34和第二包封开口36可以是彼此间隔的关系，其中，它们之间的包封材料32是光学不透明的以形成挡光板。在电路板12的第二面16上例如通过胶合固定例如由玻璃制成的在第一包封开口34之内的透明体38，并且该第一包封开口覆盖第一板开口20且可以大于后者。
电子器件10可以包括在第二板开口22和第二包封开口36之内的透镜40。透明40可以具有弯曲的上表面。如在图3中最佳示出的，透镜40还可以包括围绕上表面的包封流出停止槽42。包封流出停止槽42可以从透镜40的多个最外部边缘向内间隔开。
此外，电子器件10还可以包括光发射器44，该光发射器例如通过胶合被安装在电路板12的第二面16上并且与第二包封材料36相关联并被引入透镜40。集成电路24包括在其上与第一和第二光接收区域(或光传感器)28和30以及光发射器44协同操作以限定接近度传感器的电路。包封材料32、透明体38和透镜的多个最上部部分40彼此对准平齐。
为了将电子封装体10电气地联接至另一个部件，电路板12的第一面14可以配备有多个金属电气连接触点46，如放置在集成电气连接网络18的后部凸块触点上并包围集成电路24的球式触点。
现在参照图4，根据具体的示例性实施例，电路板12是长方形的，并且集成电路24也是长方形的且沿着电路板12的纵轴纵向地延伸。可以沿着电路板12的纵轴放置这些光接收区域(或光传感器)28和30。
在操作中，光辐射可由光发射器44发射进入透镜40，该光辐射通过透镜40朝向外部漫射。在透镜40的材料中漫射的光辐射还到达与电路板12的第二开口22对准的第二接收区域30。第一光接收区域28通过透明块38接收外部光辐射。
因此，第二光接收区域30通过电路板12的第二开口22接收主要来自光发射器44和次要来自外部的光辐射，来自第二光接收区域30的信号能够形成参照用于分析来自第一光接收区域28的信号。以上的结果是电子器件10可以用作接近度传感器。
电子器件10可以从集中制造中获得。如本领域技术人员将认识到的，例如，可以使用衬底制造电子器件，该衬底具有第一面和第二面，并且具有根据矩阵建立并且对应于有待生产的多个电路板12的多个相邻布置。在矩阵的每个电路板12中，集成电气连接网络18可以被提供。可以在每个电路板12中在多个位置处制作第一开口20和第二开口22，从而使得光接收区域28和30可以如之前所描述地定位并且可以通过钻孔操作产生。
接下来，通过将电气连接元件26设置在位，可以在每个电路板12中在之前所描述的位置中安装具有光接收区域28和30的集成电路24。如本领域技术人员将认识到的，透明块38、具有包封流出停止槽42的透镜40以及光发射器44被安装于每个电路板12上并且电气连接被安装。通常，所描述的各个制造步骤可以通过实现微电子领域中所使用的常规装置而获得。
接下来，包模工艺用于将包封材料32耦接至电路板12的第二面16上。由于透镜40可以具有凹陷的弯曲的上表面和包封流出停止槽42，这允许用膜辅助进行包模并防止树脂泛溢。具体地，包封流出停止槽42在包模工艺过程中防止树脂流出到透镜40的上表面上。电子器件10可以具有在测试中易于操作并且具有表面安装技术(SMT)的标准平面栅格阵列(LGA)的外观。此外，可以在不使用安装于电路板12的表面上的盖件或帽盖的情况下完成包模工艺。
已经被描述的电子器件10可以被安装在便携式或移动的电话的护套或外壳中，该电话具有面向第一和第二开口20和22的多个开口以便面向光发射器44和光接收区域28、以便形成适用于检测对象或人体的一部分的存在或不存在的接近度传感器、以便在电话的电子电路中生成特定的命令。
本发明的许多修改和其他实施例对于受益于前面的描述和相关附图中呈现的教导的本领域技术人员来说将是显而易见的。因此，应当理解本发明不限于所披露的具体实施例，并且那些修改及实施例旨在被包括于所附权利要求书的范围内。

Claims (23)

1.一种电子器件，包括：
衬底；
耦接至所述衬底的第一光传感器；
耦接至所述衬底的光发射器；
与所述光发射器对准的透镜，所述透镜具有弯曲的上表面和围绕所述弯曲的上表面的包封流出停止槽，以及所述包封流出停止槽在所述弯曲的上表面上方延伸并且由脊区域与所述透镜的所述弯曲的上表面间隔开；以及
耦接至所述衬底的包封材料，所述包封材料具有贯穿其的分别与所述第一光传感器和所述透镜对准的第一包封开口和第二包封开口。
2.如权利要求1所述的电子器件，进一步包括在所述第一包封开口之内的透明体。
3.如权利要求2所述的电子器件，其中，所述包封材料、所述透明体和所述透镜的多个最上部部分彼此对准平齐。
4.如权利要求1所述的电子器件，其中，所述第一包封开口与所述第二包封开口是间隔关系并且它们之间的包封材料是光学不透明的。
5.如权利要求1所述的电子器件，其中，所述包封流出停止槽从所述透镜的多个最外部边缘向内间隔开。
6.如权利要求1所述的电子器件，其中所述包封流出停止槽包括距所述衬底的顶部表面具有第一距离的底部表面，所述透镜的弯曲的上表面的最外边缘距所述衬底的顶部表面第二距离，所述第一距离大于所述第二距离。
7.一种电子器件，包括：
电路板，所述电路板具有第一面和第二面并且具有贯穿其的第一板开口和第二板开口；
集成电路，所述集成电路耦接至所述电路板的所述第一面并且包括分别与所述第一板开口和所述第二板开口对准的第一光接收区域和第二光接收区域；
包封材料，所述包封材料耦接至所述电路板的所述第二面并且具有贯穿其的分别与所述第一板开口和所述第二板开口对准的第一包封开口和第二包封开口；以及
透镜，所述透镜在所述第二板开口和所述第二包封开口之内并且具有弯曲的上表面和围绕所述弯曲的上表面的包封流出停止槽，以及所述包封流出停止槽在所述弯曲的上表面上方延伸并且由脊区域与所述透镜的所述弯曲的上表面间隔开。
8.如权利要求7所述的电子器件，进一步包括在所述第一包封开口之内的透明体。
9.如权利要求8所述的电子器件，其中，所述包封材料、所述透明体和所述透镜的多个最上部部分彼此对准平齐。
10.如权利要求7所述的电子器件，其中，所述包封流出停止槽从所述透镜的多个最外部边缘向内间隔开。
11.如权利要求7所述的电子器件，其中，所述第一包封开口与所述第二包封开口是间隔关系并且它们之间的包封材料是光学不透明的。
12.如权利要求7所述的电子器件，进一步包括与所述第二包封开口相关联并被引入所述透镜的光发射器。
13.如权利要求12所述的电子器件，其中，所述集成电路包括在其上与所述第一和第二光接收区域以及所述光发射器协同操作以限定接近度传感器的电路。
14.如权利要求7所述的电子器件，进一步包括由包围所述集成电路的所述电路板的所述第一面承载的多个触点。
15.如权利要求7所述的电子器件，其中所述包封流出停止槽包括距所述电路板的顶部表面具有第一距离的底部表面，所述透镜的弯曲的上表面的最外边缘距所述电路板的顶部表面第二距离，所述第一距离大于所述第二距离。
16.一种制造电子器件的方法，所述方法包括：
形成电路板，所述电路板具有第一面和第二面并且具有贯穿其的第一板开口和第二板开口；
将集成电路耦接至所述电路板的所述第一面并且包括分别与所述第一板开口和所述第二板开口对准的第一光接收区域和第二光接收区域；并且
在所述电路板的所述第二面上形成包封材料并且具有贯穿其的分别与所述第一板开口和所述第二板开口对准的第一包封开口和第二包封开口，并且其中，透镜在所述第二板开口和所述第二包封开口之内，所述透镜具有弯曲的上表面和围绕所述上表面的包封流出停止槽，以及所述包封流出停止槽在所述弯曲的上表面上方延伸并且由脊区域与所述透镜的所述弯曲的上表面间隔开。
17.如权利要求16所述的方法，进一步包括耦接在所述第一包封开口之内的透明体。
18.如权利要求17所述的方法，其中，所述包封材料、所述透明体和所述透镜的多个最上部部分彼此对准平齐。
19.如权利要求16所述的方法，其中，所述包封流出停止槽从所述透镜的多个最外部边缘向内间隔开。
20.如权利要求16所述的方法，其中，所述第一包封开口与所述第二包封开口是间隔关系并且它们之间的包封材料是光学不透明的。
21.如权利要求16所述的方法，进一步包括将光发射器与所述第二包封开口进行关联并将其引入所述透镜。
22.如权利要求21所述的方法，进一步包括将所述集成电路耦接至所述第一和第二光接收区域以及所述光发射器以限定接近度传感器。
23.如权利要求16所述的方法，其中所述包封流出停止槽被限定在所述透镜的弯曲的上表面上的突起的部分中，以及其中所述包封流出停止槽包括底部表面，所述底部表面在所述透镜的弯曲的上表面的最外边缘上方延伸。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11996397B2 (en) * 2016-03-31 2024-05-28 Stmicroelectronics Pte Ltd Wafer level proximity sensor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10324213B2 (en) * 2016-08-30 2019-06-18 Intel Corporation Capacitive proximity sensing
EP3290950A1 (en) * 2016-09-01 2018-03-07 ams AG Optical sensor module and method for manufacturing an optical sensor module for time-of-flight measurement
CN106385511B (zh) * 2016-10-26 2022-04-22 Oppo广东移动通信有限公司 传感器模组、面板组件及移动终端
CN108231744B (zh) * 2016-12-20 2019-11-12 上海新微技术研发中心有限公司 一种单片集成距离传感器及其制造方法
FR3061629A1 (fr) * 2017-01-03 2018-07-06 Stmicroelectronics (Grenoble 2) Sas Procede de fabrication d'un capot pour boitier electronique et boitier electronique comprenant un capot
FR3061628A1 (fr) 2017-01-03 2018-07-06 Stmicroelectronics (Grenoble 2) Sas Procede de fabrication d'un capot d'encapsulation pour boitier electronique et boitier electronique comprenant un capot
FR3061630B1 (fr) 2017-01-03 2021-07-09 St Microelectronics Grenoble 2 Procede de fabrication d'un capot pour boitier electronique et boitier electronique comprenant un capot
US11522108B2 (en) * 2017-06-14 2022-12-06 Lite-On Opto Technology (Changzhou) Co., Ltd. Package structure
CN115241297B (zh) * 2022-09-23 2023-01-31 江苏长电科技股份有限公司 芯片封装结构及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1727850A (zh) * 2004-07-26 2006-02-01 夏普株式会社 反射编码器和使用该反射编码器的电子装置
WO2007091761A1 (en) * 2006-02-06 2007-08-16 Top Engineering Co., Ltd. Appareil et procede d'assemblage d'une face avant avec une lentille de liquide
CN101936752A (zh) * 2009-06-30 2011-01-05 安华高科技Ecbuip(新加坡)私人有限公司 光学接近传感器封装
US20130009173A1 (en) * 2011-07-08 2013-01-10 Stmicroelectronics (Grenoble 2) Sas Optical electronic package
CN103400836A (zh) * 2013-08-12 2013-11-20 日月光半导体制造股份有限公司 近接传感器封装构造及其制作方法
CN205406519U (zh) * 2016-01-04 2016-07-27 歌尔声学股份有限公司 一种光学芯片的封装结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795576B2 (en) * 2008-12-23 2010-09-14 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Single dome lens reflective optical encoder
US20120290255A1 (en) * 2011-05-13 2012-11-15 Intersil Americas Inc. Clear layer isolation
US20140021491A1 (en) 2012-07-18 2014-01-23 Carsem (M) Sdn. Bhd. Multi-compound molding
TWI527166B (zh) 2013-07-25 2016-03-21 The package structure of the optical module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1727850A (zh) * 2004-07-26 2006-02-01 夏普株式会社 反射编码器和使用该反射编码器的电子装置
WO2007091761A1 (en) * 2006-02-06 2007-08-16 Top Engineering Co., Ltd. Appareil et procede d'assemblage d'une face avant avec une lentille de liquide
CN101936752A (zh) * 2009-06-30 2011-01-05 安华高科技Ecbuip(新加坡)私人有限公司 光学接近传感器封装
US20130009173A1 (en) * 2011-07-08 2013-01-10 Stmicroelectronics (Grenoble 2) Sas Optical electronic package
CN103400836A (zh) * 2013-08-12 2013-11-20 日月光半导体制造股份有限公司 近接传感器封装构造及其制作方法
CN205406519U (zh) * 2016-01-04 2016-07-27 歌尔声学股份有限公司 一种光学芯片的封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11996397B2 (en) * 2016-03-31 2024-05-28 Stmicroelectronics Pte Ltd Wafer level proximity sensor

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