JP2014510417A5 - - Google Patents
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- Publication number
- JP2014510417A5 JP2014510417A5 JP2014502891A JP2014502891A JP2014510417A5 JP 2014510417 A5 JP2014510417 A5 JP 2014510417A5 JP 2014502891 A JP2014502891 A JP 2014502891A JP 2014502891 A JP2014502891 A JP 2014502891A JP 2014510417 A5 JP2014510417 A5 JP 2014510417A5
- Authority
- JP
- Japan
- Prior art keywords
- mask layer
- silicon
- water vapor
- temperature
- selectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/076,272 US20120248061A1 (en) | 2011-03-30 | 2011-03-30 | Increasing masking layer etch rate and selectivity |
| PCT/US2012/031738 WO2013101274A1 (en) | 2011-03-30 | 2012-03-31 | Increasing masking layer etch rate and selectivity |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014510417A JP2014510417A (ja) | 2014-04-24 |
| JP2014510417A5 true JP2014510417A5 (https=) | 2015-05-14 |
| JP6081442B2 JP6081442B2 (ja) | 2017-02-15 |
Family
ID=46925858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014502891A Active JP6081442B2 (ja) | 2011-03-30 | 2012-03-31 | マスク層のエッチング速度と選択性の増大 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120248061A1 (https=) |
| JP (1) | JP6081442B2 (https=) |
| KR (1) | KR101799139B1 (https=) |
| TW (1) | TWI505350B (https=) |
| WO (1) | WO2013101274A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10062586B2 (en) * | 2013-07-26 | 2018-08-28 | Tokyo Electron Limited | Chemical fluid processing apparatus and chemical fluid processing method |
| TWI629720B (zh) | 2015-09-30 | 2018-07-11 | Tokyo Electron Limited | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
| JP6645900B2 (ja) * | 2016-04-22 | 2020-02-14 | キオクシア株式会社 | 基板処理装置および基板処理方法 |
| JP6732546B2 (ja) * | 2016-06-09 | 2020-07-29 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
| JP6972121B2 (ja) * | 2016-10-05 | 2021-11-24 | マジック リープ, インコーポレイテッドMagic Leap, Inc. | 不均一回折格子の加工 |
| US10551749B2 (en) | 2017-01-04 | 2020-02-04 | Kla-Tencor Corporation | Metrology targets with supplementary structures in an intermediate layer |
| KR102517333B1 (ko) * | 2018-12-21 | 2023-04-03 | 삼성전자주식회사 | 습식 식각 시스템 운전 방법 및 관련된 시스템 |
| JP7413113B2 (ja) * | 2020-03-24 | 2024-01-15 | 株式会社Ｓｃｒｅｅｎホールディングス | 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム |
| CN111785623B (zh) * | 2020-06-15 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | 湿法刻蚀方法 |
| US12237158B2 (en) * | 2020-11-24 | 2025-02-25 | Applied Materials, Inc. | Etch feedback for control of upstream process |
| KR102858800B1 (ko) * | 2020-12-24 | 2025-09-12 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US11709477B2 (en) | 2021-01-06 | 2023-07-25 | Applied Materials, Inc. | Autonomous substrate processing system |
| US20230062572A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
| KR102449897B1 (ko) | 2022-01-14 | 2022-09-30 | 삼성전자주식회사 | 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법. |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3709749A (en) * | 1969-12-01 | 1973-01-09 | Fujitsu Ltd | Method of etching insulating films |
| US4092211A (en) * | 1976-11-18 | 1978-05-30 | Northern Telecom Limited | Control of etch rate of silicon dioxide in boiling phosphoric acid |
| JPH0810684B2 (ja) * | 1989-02-17 | 1996-01-31 | 山形日本電気株式会社 | 半導体装置の製造装置 |
| JPH0350724A (ja) * | 1989-07-19 | 1991-03-05 | Hitachi Ltd | ウエットエッチング装置 |
| JPH06140380A (ja) * | 1992-10-28 | 1994-05-20 | Sanyo Electric Co Ltd | エッチング装置 |
| JP2605594B2 (ja) * | 1993-09-03 | 1997-04-30 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5885903A (en) * | 1997-01-22 | 1999-03-23 | Micron Technology, Inc. | Process for selectively etching silicon nitride in the presence of silicon oxide |
| JPH10214813A (ja) * | 1997-01-31 | 1998-08-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄方法および洗浄装置 |
| US6037273A (en) * | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
| US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
| WO2005067019A1 (en) * | 2003-12-30 | 2005-07-21 | Akrion, Llc | System and method for selective etching of silicon nitride during substrate processing |
| US20070289732A1 (en) * | 2004-03-11 | 2007-12-20 | Pillion John E | Apparatus for conditioning the temperature of a fluid |
| JP4471131B2 (ja) * | 2007-02-19 | 2010-06-02 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
| US7819984B2 (en) * | 2007-05-18 | 2010-10-26 | Fsi International, Inc. | Process for treatment of substrates with water vapor or steam |
| WO2012078580A1 (en) * | 2010-12-10 | 2012-06-14 | Fsi International, Inc. | Process for selectively removing nitride from substrates |
| US9257292B2 (en) * | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
| JP6146109B2 (ja) * | 2013-04-26 | 2017-06-14 | 新日鐵住金株式会社 | 粘結補填材の選択方法及びそれを利用した高強度コークスの製造方法 |
-
2011
- 2011-03-30 US US13/076,272 patent/US20120248061A1/en not_active Abandoned
-
2012
- 2012-03-30 TW TW101111457A patent/TWI505350B/zh not_active IP Right Cessation
- 2012-03-31 WO PCT/US2012/031738 patent/WO2013101274A1/en not_active Ceased
- 2012-03-31 JP JP2014502891A patent/JP6081442B2/ja active Active
- 2012-03-31 KR KR1020137028696A patent/KR101799139B1/ko active Active
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