JP2014510417A - マスク層のエッチング速度と選択性の増大 - Google Patents
マスク層のエッチング速度と選択性の増大 Download PDFInfo
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- 238000009835 boiling Methods 0.000 claims abstract description 59
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 53
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- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 16
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- 230000000873 masking effect Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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Abstract
Description
p=p*AxA+p*BxB+・・・
で表される。各成文の個々の蒸気圧は、
pi=p*ixi
で表される。ここで、piは混合物中での成分iの分圧で、p*iは純粋な成分iの蒸気圧で、xiは溶液(混合物)中での成分iのモル分率である。
Claims (24)
- 基板上のマスク層のエッチング速度と選択性を増大させるシステムであって:
前記マスク層とシリコン又はシリコン酸化物の層を含む複数の基板;
前記マスク層をエッチングするための処理液体を含んで前記複数の基板を処理するエッチング処理チャンバ;及び、
前記エッチング処理チャンバと結合して昇圧して蒸気と水蒸気の混合物を供給する沸騰装置;
を有し、
前記蒸気と水蒸気の混合物は、選択された目標エッチング速度と、シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を維持するのに十分な速度で前記エッチング処理チャンバへ導入される、
システム。 - 前記マスク層が、シリコン窒化物、窒化ガリウム、又は窒化アルミニウムのうちの一を有する、請求項1に記載のシステム。
- 前記処理液体がリン酸水溶液である、請求項2に記載のシステム。
- 前記選択されたエッチング選択比が10:1乃至1000:1の範囲内である、請求項2に記載のシステム。
- 前記リン酸水溶液の温度が160℃乃至220℃の範囲内である、請求項3に記載のシステム。
- 前記の昇圧された蒸気と水蒸気の混合物と処理液体が、前記エッチング処理チャンバへ流入する前に高圧で混合される、請求項2に記載のシステム。
- 前記の昇圧された蒸気と水蒸気の混合物と処理液体が、前記エッチング処理チャンバへの供給ラインから流出する前に高圧で混合される、請求項2に記載のシステム。
- 前記蒸気と水蒸気の混合物の流速と圧力が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を維持するように制御される、請求項2に記載のシステム。
- 前記の昇圧された蒸気と水蒸気の混合物と処理液体が、前記エッチング処理チャンバの底面及び側面に沿って適合するノズルを用いることによって前記エッチング処理チャンバへ導入され、
前記蒸気と水蒸気の混合物が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を維持するように制御された速度で導入される、
請求項2に記載のシステム。 - 前記処理液体が、リン酸、フッ化水素、又はフッ化水素/エチレングリコールのうちの一を含む、請求項1に記載のシステム。
- 前記蒸気と水蒸気の混合物の流速と圧力が、前記処理液体の温度を沸騰温度に変化させ、
前記処理液体の平衡濃度と温度が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を実現させる、
請求項1に記載のシステム。 - 基板上のマスク層のエッチング速度と選択性を増大させる方法であって:
前記マスク層とシリコン又はシリコン酸化物の層を含む複数の基板を作製する工程;
昇圧して蒸気と水蒸気の混合物を供給する工程;
設定されたエッチング速度及び設定されたエッチング選択比で処理液体を供給して前記シリコン又はシリコン酸化物に対して前記マスク層を選択的にエッチングする工程;
エッチング処理チャンバ内に複数の基板を設ける工程;
前記処理液体と前記蒸気と水蒸気の混合物を混合する工程;及び、
前記の混合された処理液体と蒸気と水蒸気の混合物を前記エッチング処理チャンバへ注入する工程;
を有し、
前記の混合された処理液体と蒸気と水蒸気の混合物の流れは、前記設定されたエッチング速度及び前記設定されたシリコン又はシリコン酸化物に対する前記マスク層のエッチング選択比を維持するように調整される、
方法。 - 前記マスク層が、シリコン窒化物を有する、請求項12に記載の方法。
- 前記処理液体がリン酸水溶液である、請求項13に記載の方法。
- 前記選択されたエッチング選択比が10:1乃至1000:1の範囲内である、請求項13に記載の方法。
- 前記リン酸水溶液の温度が160℃乃至180℃の範囲内である、請求項13に記載の方法。
- 前記昇圧された蒸気と水蒸気の混合物と処理液体が、前記エッチング処理チャンバへ流入する前に高圧で混合される、請求項13に記載の方法。
- 前記の混合された蒸気と水蒸気の混合物と処理液体の注入が、前記エッチング処理チャンバの底面及び側面に沿って適合するノズルを用い、
前記蒸気と水蒸気の混合物が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を維持するように制御された速度で導入される、
請求項13に記載の方法。 - 前記処理液体が、リン酸、フッ化水素、又はフッ化水素/エチレングリコールのうちの一を含む、請求項13に記載の方法。
- 前記マスク層が、シリコン窒化物、窒化ガリウム、又は窒化アルミニウムのうちの一を有する、請求項19に記載の方法。
- 前記蒸気と水蒸気の混合物の流速と圧力が、前記処理液体の温度を沸騰温度に変化させ、
前記処理液体の平衡濃度と温度が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を実現させる、
請求項20に記載の方法。 - 基板上のマスク層のエッチング速度と選択性を増大させる方法であって:
マスク層とシリコン又はシリコン酸化物の層を含む複数の基板をエッチング処理チャンバ内に設ける工程;
昇圧して処理液体と蒸気と水蒸気の混合物を混合する工程;及び、
前記の混合された処理液体と蒸気と水蒸気の混合物を前記エッチング処理チャンバへ注入する工程;
を有し、
前記の混合された処理液体と蒸気と水蒸気の混合物の流れは、前記設定されたエッチング速度及び前記設定されたシリコン又はシリコン酸化物に対する前記マスク層のエッチング選択比を維持するように制御される、
方法。 - 前記処理液体が、リン酸、フッ化水素、又はフッ化水素/エチレングリコールのうちの一を含む、請求項22に記載の方法。
- 前記蒸気と水蒸気の混合物の流速と圧力が、前記処理液体の温度を沸騰温度に変化させ、
前記処理液体の平衡濃度と温度が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を実現させる、
請求項23に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/076,272 US20120248061A1 (en) | 2011-03-30 | 2011-03-30 | Increasing masking layer etch rate and selectivity |
PCT/US2012/031738 WO2013101274A1 (en) | 2011-03-30 | 2012-03-31 | Increasing masking layer etch rate and selectivity |
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JP2014510417A true JP2014510417A (ja) | 2014-04-24 |
JP2014510417A5 JP2014510417A5 (ja) | 2015-05-14 |
JP6081442B2 JP6081442B2 (ja) | 2017-02-15 |
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Cited By (2)
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JP2017220618A (ja) * | 2016-06-09 | 2017-12-14 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
JP2023024302A (ja) * | 2020-12-24 | 2023-02-16 | セメス株式会社 | 基板処理装置および基板処理方法 |
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US10062586B2 (en) | 2013-07-26 | 2018-08-28 | Tokyo Electron Limited | Chemical fluid processing apparatus and chemical fluid processing method |
TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
JP6645900B2 (ja) * | 2016-04-22 | 2020-02-14 | キオクシア株式会社 | 基板処理装置および基板処理方法 |
WO2018067500A1 (en) * | 2016-10-05 | 2018-04-12 | Magic Leap, Inc. | Fabricating non-uniform diffraction gratings |
US10551749B2 (en) | 2017-01-04 | 2020-02-04 | Kla-Tencor Corporation | Metrology targets with supplementary structures in an intermediate layer |
KR102517333B1 (ko) * | 2018-12-21 | 2023-04-03 | 삼성전자주식회사 | 습식 식각 시스템 운전 방법 및 관련된 시스템 |
CN111785623B (zh) * | 2020-06-15 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | 湿法刻蚀方法 |
US20230062572A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
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JP2017220618A (ja) * | 2016-06-09 | 2017-12-14 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
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JP7392055B2 (ja) | 2020-12-24 | 2023-12-05 | セメス株式会社 | 基板処理装置および基板処理方法 |
Also Published As
Publication number | Publication date |
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TWI505350B (zh) | 2015-10-21 |
KR20140130622A (ko) | 2014-11-11 |
WO2013101274A1 (en) | 2013-07-04 |
US20120248061A1 (en) | 2012-10-04 |
JP6081442B2 (ja) | 2017-02-15 |
TW201250817A (en) | 2012-12-16 |
KR101799139B1 (ko) | 2017-11-17 |
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