JP6081442B2 - マスク層のエッチング速度と選択性の増大 - Google Patents
マスク層のエッチング速度と選択性の増大 Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L22/10—Measuring as part of the manufacturing process
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Description
p=p*AxA+p*BxB+・・・
で表される。各成文の個々の蒸気圧は、
pi=p*ixi
で表される。ここで、piは混合物中での成分iの分圧で、p*iは純粋な成分iの蒸気圧で、xiは溶液(混合物)中での成分iのモル分率である。
Claims (13)
- 基板上のマスク層のエッチング速度とエッチング選択性とを増大させるシステムであって:
前記マスク層とシリコン又はシリコン酸化物の層とを含む複数の基板;
前記複数の基板を処理するように構成されたエッチング処理チャンバであって、前記複数の基板における前記マスク層をエッチングするための処理液体を含み、前記処理液体の温度は、160℃乃至220℃の範囲である、エッチング処理チャンバ;及び、
前記処理チャンバに結合され、昇圧下で蒸気と水蒸気の混合物を発生するように構成された沸騰装置;
を有し、
前記蒸気と水蒸気の混合物は、圧力が0.2〜2.0MPaの範囲であり、選択された目標エッチング速度と、シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比とを維持するのに十分な流速で前記エッチング処理チャンバへ導入される、システム。 - 前記マスク層が、シリコン窒化物、窒化ガリウム、又は窒化アルミニウムのうちの一を有する、請求項1に記載のシステム。
- 前記処理液体がリン酸水溶液である、請求項1に記載のシステム。
- 前記選択された目標エッチング選択比が10:1乃至1000:1の範囲内である、請求項1に記載のシステム。
- 前記蒸気と水蒸気の混合物の流速と圧力は、前記処理液体の温度が生じるように制御され、前記処理液体の沸騰温度が生じ、
さらに、前記処理液体の平衡濃度と温度が生じ、前記目標エッチング速度と、前記目標エッチング選択比とが実現される、
請求項1に記載のシステム。 - 基板上のマスク層のエッチング速度とエッチング選択性とを増大させる方法であって:
前記マスク層とシリコン又はシリコン酸化物の層とを含む複数の基板を作製する工程;
昇圧下で、圧力が0.2〜2.0MPaの範囲にある、蒸気と水蒸気の混合物を得る工程;
設定されたエッチング速度及び設定されたエッチング選択比で、前記シリコン又はシリコン酸化物の上部の前記マスク層を選択的にエッチングするための処理液体を得る工程であって、前記処理液体の温度は160℃乃至220℃の範囲である、工程;
エッチング処理チャンバ内に前記複数の基板を配置する工程;
前記処理液体と前記蒸気と水蒸気の混合物とを組み合わせる工程;及び、
前記組み合わされた処理液体と蒸気と水蒸気の混合物とを前記エッチング処理チャンバへ注入する工程;
を有し、
前記組み合わされた処理液体と蒸気と水蒸気の混合物との流れは、前記設定されたエッチング速度及び前記設定されたシリコン又はシリコン酸化物に対する前記マスク層のエッチング選択比を維持するように調整される、方法。 - 前記マスク層が、シリコン窒化物を有する、請求項6に記載の方法。
- 前記処理液体がリン酸水溶液である、請求項7に記載の方法。
- 前記設定されたエッチング選択比が10:1乃至1000:1の範囲内である、請求項6に記載の方法。
- 前記マスク層が、シリコン窒化物、窒化ガリウム、又は窒化アルミニウムのうちの一を有する、請求項6に記載の方法。
- 前記蒸気と水蒸気の混合物の流速と圧力は、前記処理液体の温度が生じるように制御され、前記処理液体の沸騰温度が生じ、
さらに、前記処理液体の平衡濃度と温度が生じ、前記目標エッチング速度と、前記目標エッチング選択比とが実現される、
請求項10に記載の方法。 - 基板上のシリコン窒化物のエッチング速度とエッチングの選択性とを増大させる方法であって:
シリコン窒化物のマスク層とシリコン又はシリコン酸化物の層とを含む複数の基板をエッチング処理チャンバ内に配置する工程;
昇圧下で処理液体と蒸気と水蒸気の混合物とを組み合わせる工程であって、前記処理液体の温度は160℃乃至220℃の範囲であり、前記蒸気と水蒸気の混合物は、圧力が0.2〜2.0MPaの範囲にある工程;及び、
前記組み合わされた処理液体と蒸気と水蒸気の混合物とを前記エッチング処理チャンバへ注入する工程;
を有し、
前記組み合わされた処理液体と蒸気と水蒸気との混合物の流れは、前記シリコン窒化物の目標エッチング速度、及びシリコン又はシリコン酸化物に対する前記シリコン窒化物の目標エッチング選択比を維持するように制御される、方法。 - 前記蒸気と水蒸気の混合物の流速と圧力は、前記処理液体の温度が生じるように制御され、前記処理液体の沸騰温度が生じ、
さらに、前記処理液体の平衡濃度と温度が生じ、前記目標エッチング速度と、前記目標エッチング選択比とが実現される、請求項12に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/076,272 US20120248061A1 (en) | 2011-03-30 | 2011-03-30 | Increasing masking layer etch rate and selectivity |
PCT/US2012/031738 WO2013101274A1 (en) | 2011-03-30 | 2012-03-31 | Increasing masking layer etch rate and selectivity |
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JP2014510417A JP2014510417A (ja) | 2014-04-24 |
JP2014510417A5 JP2014510417A5 (ja) | 2015-05-14 |
JP6081442B2 true JP6081442B2 (ja) | 2017-02-15 |
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US (1) | US20120248061A1 (ja) |
JP (1) | JP6081442B2 (ja) |
KR (1) | KR101799139B1 (ja) |
TW (1) | TWI505350B (ja) |
WO (1) | WO2013101274A1 (ja) |
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US10062586B2 (en) * | 2013-07-26 | 2018-08-28 | Tokyo Electron Limited | Chemical fluid processing apparatus and chemical fluid processing method |
TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
JP6645900B2 (ja) * | 2016-04-22 | 2020-02-14 | キオクシア株式会社 | 基板処理装置および基板処理方法 |
JP6732546B2 (ja) * | 2016-06-09 | 2020-07-29 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
JP6972121B2 (ja) | 2016-10-05 | 2021-11-24 | マジック リープ, インコーポレイテッドMagic Leap, Inc. | 不均一回折格子の加工 |
US10551749B2 (en) | 2017-01-04 | 2020-02-04 | Kla-Tencor Corporation | Metrology targets with supplementary structures in an intermediate layer |
KR102517333B1 (ko) * | 2018-12-21 | 2023-04-03 | 삼성전자주식회사 | 습식 식각 시스템 운전 방법 및 관련된 시스템 |
JP7413113B2 (ja) * | 2020-03-24 | 2024-01-15 | 株式会社Screenホールディングス | 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム |
CN111785623B (zh) * | 2020-06-15 | 2022-11-04 | 上海华虹宏力半导体制造有限公司 | 湿法刻蚀方法 |
KR20220092345A (ko) * | 2020-12-24 | 2022-07-01 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US20230062572A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor device |
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US3709749A (en) * | 1969-12-01 | 1973-01-09 | Fujitsu Ltd | Method of etching insulating films |
US4092211A (en) * | 1976-11-18 | 1978-05-30 | Northern Telecom Limited | Control of etch rate of silicon dioxide in boiling phosphoric acid |
JPH0810684B2 (ja) * | 1989-02-17 | 1996-01-31 | 山形日本電気株式会社 | 半導体装置の製造装置 |
JPH0350724A (ja) * | 1989-07-19 | 1991-03-05 | Hitachi Ltd | ウエットエッチング装置 |
JPH06140380A (ja) * | 1992-10-28 | 1994-05-20 | Sanyo Electric Co Ltd | エッチング装置 |
JP2605594B2 (ja) * | 1993-09-03 | 1997-04-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US5885903A (en) * | 1997-01-22 | 1999-03-23 | Micron Technology, Inc. | Process for selectively etching silicon nitride in the presence of silicon oxide |
JPH10214813A (ja) * | 1997-01-31 | 1998-08-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄方法および洗浄装置 |
US6037273A (en) * | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
US6117351A (en) * | 1998-04-06 | 2000-09-12 | Micron Technology, Inc. | Method for etching dielectric films |
US7976718B2 (en) | 2003-12-30 | 2011-07-12 | Akrion Systems Llc | System and method for selective etching of silicon nitride during substrate processing |
US20070289732A1 (en) * | 2004-03-11 | 2007-12-20 | Pillion John E | Apparatus for conditioning the temperature of a fluid |
JP4471131B2 (ja) * | 2007-02-19 | 2010-06-02 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
CN102623328B (zh) * | 2007-05-18 | 2014-11-26 | Fsi国际公司 | 用水蒸气或蒸汽处理基材的方法 |
CN103348452A (zh) * | 2010-12-10 | 2013-10-09 | 东京毅力科创Fsi公司 | 用于从衬底选择性地移除氮化物的方法 |
US9257292B2 (en) * | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
JP6146109B2 (ja) * | 2013-04-26 | 2017-06-14 | 新日鐵住金株式会社 | 粘結補填材の選択方法及びそれを利用した高強度コークスの製造方法 |
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KR101799139B1 (ko) | 2017-11-17 |
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JP2014510417A (ja) | 2014-04-24 |
TW201250817A (en) | 2012-12-16 |
US20120248061A1 (en) | 2012-10-04 |
KR20140130622A (ko) | 2014-11-11 |
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