TW201250817A - Increasing masking layer etch rate and selectivity - Google Patents

Abstract

Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a plurality of substrates, each with a layer of silicon or silicon oxide, wherein the system comprises an etch processing chamber configured to process the plurality of substrates, the processing chamber containing a treatment liquid for etching the masking layer, and a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure, wherein the steam water vapor mixture is introduced into the processing chamber at a controlled rate to maintain a selected target etch rate and a target etch selectivity ratio of the masking layer to silicon or silicon oxide.

Description

201250817 VI. INSTRUCTIONS · · [Technical Fields of the Invention] [0001] This application generally relates to the design of an etching treatment system and method using batch etching, which is used to increase the etching of the mask layer. Silver engraving rate and selectivity. [Prior Art] [0002] Currently, a method for producing a complementary metal germanide semiconductor (pixel) semiconductor layer requires a mask layer to separate and protect the active element tilt region, such as dielectric, metal, and Strain, source/drainage, and the like. Because of the nitrite (3) f, the temporary (Sl0x 'where X is greater than the electrical and morphological similarity between 〇 and dioxide dreams (si〇2), and because Niobium nitride is easily bonded to SiO 2 , so it is often used as a mask. In other words, 'nitridite is used as an etch stop layer, but in a special case ^ double damascene treatment, the nitrite must be In the case of changing the controlled thickness of the bottom layer of the cerium oxide, the county is added. In this example, the nitrite is added to the stone eve as the fine rate of the nitrogen cut, and the oxide of the rice may be shouted, (10) good touch Yushou ss bribes (4). = The size of the mask layer and the bottom layer are reduced. The extremely thin sound selectivity will become more challenging in the future. The pre-conference technology can use different chemicals and etch and paste solutions Both chemical etchings are used for the migration of tantalum nitride. Yarns using different chemicals are controlled by the need for nitrogen cuts, as compared to the reduction of dry technology = J, for example The substrate is immersed in the dip bath of the water tree acid solution. The solution is limited by the point of the liquid phase stealing liquid. The solution: the point is as follows: the function of the temperature and the atmospheric pressure, used to maintain the method, by the feedback loop controller, the amount The existence of the measurement of the state of the stagnation, the addition of g/cold 5 weeks of positive water volume and the identification of the heater _ m rotation shape 201250817 Maintain at the target temperature (the typical range of target temperature is from Celsius (10) degrees to Celsius). When the aqueous phosphoric acid solution is heated without adding water, the Buddha's point rises as the water evaporates from the solution. [0004] Due to the use of the current phosphoric acid recycling tank, the increase in selectivity is reduced by the increase in selectivity. The result is that the nitrogen cut side speed wheel reduces the manufacturing cost, and the result of the Shangfo point is to reduce the water concentration. The water has the riding property on the control of the gasification stone on the selectivity of Shixi oxygen = matter or butterfly. Experimental evidence shows high temperature. The next non-boiling state (ie low water content) is not To the appropriate etch selectivity. Conversely, in order to improve the selectivity, it is preferred to have water with agronomy (ie, further dilute the acid), but this is also the case. The concentration of apricot in the f-fill bath reduces the acid mixture potential. Point. At lower temperatures, due to the nitriding rate and the temperature of the strong Arrhenius (Arrhe g 矽 the rate of the mark is significantly reduced. Building emulsification ^ °! 5] in the shot 'for example, MGITiS in the money patent » 4, (8) 2, 211 - a method for controlling the rate of oxide oxide in a boiling aqueous phase phosphoric acid solution, the Wei compound insulating layer is used to shield the nitrogen-cut insulating layer. The material is added to the aqueous solution of the sulphate water. In addition, a method for continuously monitoring the composition is disclosed in U.S. Patent No. 5,332,145, which is incorporated herein by reference. What is desired in the art is that the mask layer rate can be maintained, and that the mask layer side is also superior to the dream or Wei compound high selection method and system. For the batch name insect processing system and method that can satisfy the surname rate, the silver engraving selectivity, the meal 'system and the cost of the meal, and the single base [invention content] = 6], the invention provides a kind to increase the plural a mask layer on each of the substrates, a method of rate and _selectivity, and a method of each of the plurality of substrates. The system includes: a button II configured to process the plurality of substrates To the treatment liquid containing the _mask layer; and boiling again, the horse 5 to the processing chamber to generate a steam water vapor mixture under high pressure for 201250817, wherein the helium vapor mixture is introduced at a controlled rate In the chamber, to maintain the selected target side rate and the mask layer __oxidation_target selectivity ratio. [Embodiment] [〇〇25] In order to assist in describing the present invention, the application of the present concept will be described in Banxian County (4). The method and process are equally applicable to potted workpieces such as wafers, discs, or the like. Similarly, water__ will be used to describe the treatment liquid of the present invention. Other treatment liquids can be selectively used as described below. [0〇26丄爹,1'Archistration Figure 1〇 shows the batch-etching system section of the first-hand nitriding technique, in which the side chemical (rice engraving) uses one or more input streams. 34 and 38 are assigned to the rice processing chamber 44 on which the plurality of substrates 26 are disposed. The surname can be re-taded or recycled or disposed of using spill 42 and overflow D 18 . The heater 22 can be placed, for example, by having the heater located on the side or bottom of the processing chamber 44. The heater 22 can be in the form of an external form or in the (four) (four) form on the pipeline. [0027] Figure 2 depicts an exemplary architectural diagram of a prior art batch stencil processing system for a surname of Nitrix, which includes a money processing chamber $ and an overflow tank %. As above, a heater 70 can be disposed on the front, back, and bottom of the surname processing chamber 66; the heaters 70 can be externally or on the pipeline, and can provide a flow of heat flux in the milk chamber. In the aqueous solution 94. The effluent heat flux contains conduction 62 and water j 90 . If the inflow heat flux is greater than the outflow heat flux due to evaporation and conduction, the temperature of the water j will increase and the rotation will occur. During the period of (four) degrees and atmospheric pressure, the increase in heat causes the water to boil faster. In order to maintain the solids of the aqueous solution 94, the process chamber controller (not shown) must simultaneously adjust the heaters 70 and ΐ/, Π, ϊ 78; the main feed water 74. If the influent feed water is larger than the water f caused by evaporation, the temperature of the solution is lowered, the acid is diluted, and the boiling point is lowered. On the other hand, if the water loss caused by the inflow is increased, the temperature of the aqueous solution increases, the acid is concentrated, and the rate of nitriding in the known acid is strongly affected by the temperature, and the rate of response to the temperature rises. rise. The chemical reaction used to etch tantalum nitride and to etch two 201250817 yttrium oxide is as follows:

S13N4+ 4H3PO4+ 12H20-^ 3Si(OH)4+ 4NH4H2P04 Si0^2H20->Si(pH)4 [0029] In a wet bench configuration, when the substrate is immersed in a bath of aqueous phosphoric acid solution (aqueous solution) For example, in the EXPEDIUS equipment line of Tokyo Power Co., Ltd. (TEL), the processing temperature is limited by the boiling point of the aqueous solution. The boiling point of an aqueous solution is a function of the concentration of water in the acid as a function of atmospheric pressure and can be governed by the Clausius-Clapeyron relation and the Ranaut's law (Raouit, s... The Qausius_Qapeyron equation for the vapor boundary is expressed as.

In = ’, ·· Equation 3.0 where

In is the natural logarithm, D and Λ are the corresponding temperatures (expressed by Kelvins 4 other absolute temperature lumen) and vapor pressure, and the corpse 2 is the corresponding temperature and pressure of another point, which is Moh vaporization 焓And & is the gas constant (8.314) 111 〇 factory 1 〇. The vapor pressure of the solution depends on the steam pressure of each chemical component and the molar fraction of the components present in the bath. Once balanced, the total solution The vapor pressure P is: The Μ-axis knife has reached the equation 4.0 P — Pa*^a + + * and the individual vapor pressures of the components are smoke = < and wherein: A is the component of the mixture / partial pressure, pure The vapor pressure of the component/vapor, and the composition of the solution (in the mixture) is 回. The mole is fed back to the Wei controller, and the measurement is carried out with the 201250817 3 2, and the same time, the bath volume is added. And the heater power when the shore 曰, to maintain this boiling state at the target temperature (160. 〇. The liquid is only too six] ^ in the Wei Wei recirculation tank, so to reduce selectivity = spurt, acid temperature Observing the increase in production and listening to the wealth of the fruit in order to reduce the water concentration. The water in the control of the household ", f 2 2 off 5 sex [equation The chemical reaction in Bu 2]. As shown in Figure 5, the non-Foten state (ie, low water content) of the aptitude of the person does not cause ^. Conversely, in order to improve the selectivity, it has a high concentration of water (also low). Water soluble ί boiling ί. 1 ==^ 不=^= The water concentration is reduced A = (rhe:=r_ [] In order to use _ the solvent can be water or some other solvent, so use the new body i :: In the remainder of the specification, the present invention focuses on -; ϋ'ΐί, while maintaining high water content to maintain relative or sulphur dioxide. The high temperature is achieved by: The flow of pressurized vapor into the phosphoric acid is released into the phosphoric acid prior to being split into the single-substrate on the substrate, which provides for efficient transfer to engrave selectivity. For one-way treatment, it must be treated as follows: ϊ ϊ; emulsified bismuth phosphoric acid to assist in selective control. For 回石夕; oxidized stone is supplied in the original acid filling, or by nitriding. (This is supplied for the beauty of the batch processing system.) In one embodiment, the vapor jet can also be preheated. The plate is used to ensure the uniformity of the surface from k to the edge of the substrate. The problem solved by the cover sand is: using a treatment solution such as phosphoric acid. The base reduction becomes practical and costly. The Mainland is regarded as “handling” and is typically

Remove the residual particles before the Kstandard dean L SC1) step. Because 201250817 particle redeposition and / or back side to front side of the mechanism of pollution, so - is: using direct steam injection to heat the nitrogen cut, [Wu Gu ^ example in the 'cook' Efferent (for the surrounding The liquid water of temperature is used to supply the supply of if water-vapor mixture. The temperature of the Weishui steam mixture can be generated by the pressure generated by the steel (4). Weaving, transporting the vapor water vapor mixture to the bismuth phosphorus cationization feed line to the single-substrate processing chamber. Vapor water vapor mixing does not add to the bath and moisture, and introduces both the vapor phase and the liquid phase excess water vapor, and the nitride etching selectivity of the bismuth and antimony. [00=] In another embodiment, the vapor water vapor mixture is combined with the treatment liquid prior to entering the rice processing chamber. Adequate pressure must be maintained to avoid boiling in the supply line. Then, at the time of entering the processing chamber of the brewing force, the liquid begins to boil rapidly. In another embodiment, the number can be used above the substrate. The first nozzle introduces heated phosphoric acid; the second or more nozzles introduce a jet of high temperature vapor water D mixture to preheat the substrate surface prior to introduction of phosphoric acid to assist in maintaining a uniform temperature across the substrate, and thus ensuring uniformity of the money. In this embodiment, the nozzle position and the number of nozzles can be set such that the efficiency of the heat transfer wheel from the treatment liquid to the substrate is maximized. A vaporous water vapor mixture can also be injected onto the back side of the substrate to maintain temperature uniformity. [0037] Figure 3 depicts an exemplary graph of the boiling point of a dish acid as a function of pot acid concentration and temperature under one atmosphere. The temperature and concentration of the treatment liquid are two key factors in determining the silver engraving rate and the tantalum nitride etch selectivity relative to the niobium or tantalum oxide. Figure 3 is a plot of the boiling point of the temperature of the batch etch treatment versus the concentration of phosphoric acid 304. Referring to the boiling point curve 304, it is assumed that the treatment liquid is in the initial group of conditions 312 labeled A'. For example, the treatment liquid has a weight percentage of 85 at about 12 degrees Celsius.

S 201250817 f acid concentration. The treatment liquid is heated until it reaches the point f as represented by the point ,, which is also a function of the point curve of the threshold of the exemplary money processing system, as a function of the concentration of the acid, and the vapor pressure curve. It is a function of the temperature of the equilibrium condition. Wei concentration system indicates that = liquid towel _ acid weight of one hundred dollars. Assume that the treatment (4) is the initial condition of the group 'to the weight of 85% ♦ acid component and photo-=) 120 degrees temperature. The treatment liquid is heated and reaches the temperature of the boiling point side. The heating can be performed on the pipeline or by an external heater or by means of r, , and syrup to the paste treatment liquid. In the embodiment, the point of the point (2) on the skill curve 404 corresponds to the limit of the center of the heart. The combination of secret and water vapor (vapor vapour mixture) is pumped and recorded. The H bottom towel is engraved, and the composition of the Wei Shipu Da Shi Gu, the temperature of the war, and about u million ^; === compound and water The other combination of the second, the target side of the nitrogen cut side rate and side selectivity. The pressure of the base π mixture can be in the range of 〇.2 to 2 (). /', the pressure of the eye-catching coffee is selected as the vapor-vapor mixture, and the fuel (vapor pressure curve _ on the point Α) is about the medium to the bath or the single substrate 1 insect processing system liquid on the 4 'boiling point Connect the point eight to the boiling point curve 4〇==. === If the choice is concentrated, it is mine. Use ====^直=determine 'about 96% of the pair when causing balance】Milk;; the flow rate and pressure of the compound are used as the secret to control the brewing degree of the liquid, and the temperature of the liquid point of the processing liquid , and proceed to determine the concentration of phosphoric acid in the liquid at 201250817. The equilibrium sulphuric acid concentration and temperature of the treated liquid affect the surname rate and etching selectivity. [0040] FIG. 5A depicts an exemplary graph 500 of a first curve 5〇4 comprising a composition of a phosphoric acid solution and a second line 508 of water, wherein the composition of the phosphoric acid solution is expressed as water phase molars per cubic meter ( Aq· m〇ls/m3), and the water system is used. The function of the temperature in c is not expressed as m〇ls/m. When the treatment liquid is heated by % in the range of 160 to 220 ° C, the phosphoric acid & degree is substantially unchanged, however, the water concentration is lowered due to evaporation with increasing temperature. For the step-by-step display of the selective change of the treatment liquid, FIG. 5B shows an exemplary diagram of the selectivity of the spheroidal acid solution 55〇, the treatment liquid in the selective engraving system of the linonic acid solution The function of time and temperature. In the test open: day, the treatment liquid (water phase acid) gallium, and deionized water (also (four) (four) sinking, DIW) is used to incorporate the treatment liquid 'nitriding dreams to the side selectivity of the second oxidation 554 high . After 50 minutes, the incorporation of DIW was stopped and the temperature of the treatment liquid was about 22 Torr. The ^ ^ to the apex ' reaches the same temperature as the heating ϋ power is reduced and the temperature is lowered. As can be the downward slope of the etch selectivity curve 564

Also from; to low (9) to chat in the re-incorporation of the treatment liquid into the boiling state, and the etching selectivity from low to high (558 to % ', body in the _ to Fu Fancai It is advantageous to treat the liquid phosphate treatment liquid, and preferably about 180. (: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The side processing chamber 64 628 is placed in the processing chamber 64G, and the excess processing liquid enters the fine chamber 2, and the liquid can be disposed via the discharge port. The steam generator 614 is supplied with the input liquid by the transport reading 620. And heated by a heater 616 that produces a vapor-vapor mixture 612. The vapor-vapor mixture 612 is attached to the bottom of the processing chamber 64 by means of a gamma-distribution. The controller is used (not shown ^^次_ The treatment system is configured to process the flow of the micro- and strip-rolled water vapor mixture 612 (which may or may not be pressurized to a high pressure) by (iv) treating the liquid. The treatment rate and the pressure of the selected side may be from 0.2. In the range of 2,0Mpa.

10 S 201250817 [0042] 6B is an exemplary schematic diagram of a system 650 in accordance with an embodiment of the present invention. The single substrate (10) is stationary. The platform 062 is configured to maintain the substrate (10) plate rotation when the process liquid 678 is dispensed from the supply line 682 and the two gas water vapor mixture 674 is dispensed from the supply transfer line 67. The vaporous water vapor mixture 674 is passed through the supply line 670 and traversed the substrate 654 via a spray & arranging uniformly to the extent of the substrate 654. A plurality of processing schemes similar to the single substrate processing system 65 can be arranged, such as stacked, orthogonal, or _arranged, and can be arranged in a similar manner for use in a substrate transfer system. It can be delivered to the back side of the substrate 654- via a vapor transfer line (10) to preheat or maintain the uniformity and temperature of the range of the substrate 654. /J [0043] Figure 7A is an exemplary schematic illustration of a batch etch processing system 700 using a nozzle 73 to dispense a vapor water vapor mixture, in accordance with an embodiment of the present invention. The process & body 738 can be heated by a heater 716 disposed in the front and back of the etch processing chamber 742. The heater 716 can be in the form of an external form or a pipeline that will flow a heat flux 72 into the process liquid 738 in the process chamber 742. Further, additional heat flows into the chamber 722 by processing the liquid 738. Provided by injection of a vapor water mixture 736 delivered by a supply transfer line 726. The outflow heat flux comprises conductive yog and water evaporation 734. If the inflow heat flux is greater than the outflow heat flux 708, 734 due to evaporation and conduction, The temperature of the treatment liquid 738 will then increase until boiling occurs. The boiling point is determined by the concentration of the treatment liquid 738 and the atmospheric pressure. During the boiling, the increase in heat will cause the water to boil faster. [〇(H4) is to maintain the fixation of the treatment liquid 738. At the boiling temperature, the process chamber controller (not shown) must simultaneously adjust the injection of the heater 716 and the vapor water vapor mixture via nozzle 730. If the supply of vapor water vapor mixture is greater than the water loss from evaporation, the temperature of the liquid 738 is treated. Decreasing and diluting the treatment liquid 738 and lowering the boiling point. Conversely, if the inflowing water is less than the water loss caused by the evaporation, the temperature of the treatment liquid 738 is increased, the acid is concentrated, and High boiling point. The nozzle 730 is placed at the bottom of the etching process chamber 742 to provide a mixing effect to produce a uniform temperature distribution in the processing liquid 738. The processing liquid 738 can be directed to the nozzle 730 via the first supply delivery line 724. Excessive processing Liquid 201250817 Body i Heart groove 7〇4. Batch side treatment system, system 700 is used to increase the residual velocity of the mask layer such as nitride rock by increasing the temperature of the treatment liquid 738. Selective, ie, nitriding Weiqiwei compound cut _ system is also controlled by the liquid. 738 "mole concentration to maintain, for example, by adding some basis ^ water vapor Ι Ϊ 及 and eight cut plus or reduce through the nozzle 73Q The distributed vapor 7 is mixed with an exemplary schematic diagram of an early-substrate button processing system including a processing liquid recovery system and a charging unit 783 according to an embodiment of the present invention. As will be discussed in the following paragraph, # Since the treatment liquid towel maintains a high concentration of dissolved state of the dioxide, it will reduce the amount of chemicals and assist in the selection of the liquid 774. Refer to the early substrate (4) treatment system, a single substrate view is set in the money In the chamber 762, the substrate 7 &; iS" is used as the iS" supply line 764 eight counter-A cup 79 ^ 此 this soil plate 沓 769 system uses a steam input line 768 knife _ earth surface to maintain the substrate 796 The uniform temperature. The base gas 769 can be the same as the steaming mixture 766. The processing liquid is returned to the package H9

To the bottom of the side processing chamber 762 and through the discharge line H 782 of the control port (10), a portion of the treatment liquid 774 is removed via the purge line 78, and the remainder of the liquid 774 is returned via the return/lu. The selective twister 778 can be placed before or after the liquid transport line 776 to assist the maintenance of the giant ππΛ L ^ Han using the sputum line T76 by suppressing the reaction 2 The injection into the treatment amount is sufficient to cut the dissolved dioxane in the embodiment, the dissolved state of the second plate is expected to be sorrow-emulsified. One of the advantages of using the single-based system is 5: 12 201250817 Treatment of liquid neutrality. Use of phosphorus _ prior art batch etch: rational; system tolerant oxide 敎 selectivity ratio of higher concentration of oxidation resistance = ί = engraved processing system for low 瑕 scale = base: [= 〇 47] FIGS. 8A, 8B, and 8C are exemplary schematic diagrams of a dedicated system used in several embodiments of the present invention. According to an embodiment, FIG. 8Aat; -i is a package%% green cleaning_processing system 2 The first treatment is redundant; the heat treatment system (or the heat treatment member of the processing chamber). [0048] Furthermore, as shown in FIG. 8A, the transfer system can be transferred to Ί'ί-^6 The base board or multiple substrates are transferred into and out of the first processing system 816 ϋί f ί ^ Multi-component manufacturing system Xie exchange substrate. The first and the younger ones, the charging 816, 812 and the transmission system 808 may, for example, comprise processing elements within a multi-component system. For example, the 'multi-component manufacturing system 8〇4 may allow two bases or 3^ The board transports the round-trip processing component, including the last name processing system, the deposition method, the patterning edge, the quantity_, the scale device. In order to isolate the processing occurring in the first and second systems, the isolation component 820 can be used to fit Each system. == member 820 can include at least one of providing a thermally insulated thermal insulation assembly and providing a vacuum shutter valve reading. Of course, processing systems 816 and 812 and delivery system 808 can be arranged in any order. [0049] Selectively ' In another embodiment, FIG. 8A presents a process for performing a non-electrical cleaning process on a substrate. The system includes a first processing system and a second processing system 858. For example, the first processing system 856 can include a chemical processing system' and second processing system 858 can include a thermal processing system. [0050] Again, as shown in FIG. 8A, transfer system 854 can be coupled to first processing system 856 to Or multiple substrates in and out A processing system 856, and 13 201250817 can be coupled to the second process (four) (10) 'small-substrate or a plurality of substrates are transferred into and out of the system. In addition, the 'transport system Μ# can be combined with one or more substrates (not shown) Exchanging a substrate or a plurality of substrates. Although only two processing systems are shown in FIG. 8B, the transfer system 854 can still be accessed, including side processing systems, deposition systems, coating systems, and patterning systems. A device such as a measurement system. In order to isolate the processes occurring in the first and second systems, the isolation component 862 can be used in a box system. For example, the isolation assembly 862 can include at least one of a thermally insulated, thermally insulated, two-spaced, spaced-apart assembly. Further, for example, the transport system is part of the isolation component 862. [0051] Optionally, in another embodiment, FIG. 8C presents a processing system 87 for performing a non-plasma cleaning process on a substrate or a plurality of substrates. The processing system 87 is a first processing system and a second processing system 882, wherein the first processing system is stacked on top of the second processing system 882 as shown in the vertical direction. For example, the first processing system 886 can include a chemical processing system and the second processing system can include a thermal processing system. [0052] Furthermore, as shown in FIG. 8C, the transport system 878 can be coupled to the first process 886 to transfer a substrate or plurality of substrates into and out of the first processing system 886 and to the second processing system 882. To transfer a substrate or a plurality of substrates: system, =. In addition, the transfer _78 may be replaced with - or more than one substrate or a plurality of substrates. Although only two processing systems are shown in Fig. 8C, the transmission system 878 includes means such as a money processing system, a deposition system, a system, a system, a measurement system, and the like. In order to isolate the processes occurring in the first and second systems, the isolation assembly 874 can be used to lighten the various systems, and the crucible 4 can include thermal insulation components that provide thermal insulation and brakes that provide vacuum isolation. Further, for example, the delivery system 878 can serve as a port knife for the isolation assembly 874. As described above, the chemical treatment system and the heat treatment 5:; ti [Γ力 force] = ί in one embodiment for the use of a treatment liquid and a vapor-vapor mixture to add a mask layer for the substrate of the batch remanufacturing system An exemplary flow chart of the residual rate and the remainder of the 201250817 remote method 900. In step 9〇4, the target etching rate and the target etching selectivity ratio of the mask layer to tantalum oxide or tantalum are selected. ^ Household, nitriding 2, gallium nitride, or nitriding and analog ^ In step 9 〇 8, get the 'supply of gas and water vapor mixture. The vapor water vapor mixture can be vaporized from the line or from a common vapor source in the manufacturing cluster. In step 912, the supply of processing liquid to select the ground side mask layer is made. Treatment of liquids Crushed acid, hydrofluoric acid, or hydrofluoric acid/ethylene glycol and the like. In step 916, the ίίίΪΐΐ is processed into the chamber. In step 92Q, the treatment liquid system is in the form of money f: to the towel/knife, wherein the flow of the vapor water vapor blocker can be injected into the pipeline or the timepiece to inject the money into the processing chamber. The cover layer is selective to the target side of Shixia oxide or Shixia. As shown in Fig. 3, the speed of the compound can be related to the lean material according to the concentration of the working body, the water supply, the degree of the dish, and the vapor pressure. As shown in FIG. 4B, the flow rate and pressure of the mixture are used to control the temperature of the treatment liquid, the boiling temperature of the liquid, such as Η, and further determine the scale wave in the treatment liquid. . Balanced dendrite concentration and temperature affect the engraving rate and the selectivity of the money [〇〇5^ Figure 10 is the use of the combined treatment liquid and vapor water vapor mixed side treatment system of the mask layer of the substrate _ i target butterfly selection Sex. The mask layer can be a supply of nitrogen _, ^ compound. This supply can be provided by a steam generator on the pipeline or a common vapor source in the stream. In step 1012, 庐 丛木

,,, the supply of processing liquid. The treatment liquid may comprise a -acid, t-fluoric acid 'S chamber. In the step of deleting, the processing interest is placed in the remaining moments and combined with the i gas water silk compound. Sufficient _ force must be two to the Ji Teng in the second line. After entering the surrounding house, Qian Likong, and - liquid will begin to boil quickly. Knowing that, at 15 201250817 [0055] Referring to Figure ι0 'in step 1 〇 24, the combined vapor-vapor mixture and the flow of liquid are injected into the etching chamber, wherein the flow rate of the vapor-water mixture is controlled' In order to achieve the target etch rate of the mask layer and the target layer selectivity of the mask layer for bismuth oxide or germanium. As described above, the flow rate of the vapor water vapor mixture can be as shown in Figs. 4A and 4B, based on the materials based on the treatment liquid concentration, the aqueous solution temperature, and the vapor pressure. As mentioned in the description of Fig. 4B, the flow rate and pressure of the vapor-vapor mixture can be used as a variable controlling the temperature of the treatment liquid, which affects the boiling point temperature of the treatment liquid and further determines the concentration of phosphoric acid in the treatment liquid. The equilibrium phosphoric acid concentration and temperature affect the button rate and etch selectivity. Correlation can be used to determine the flow rate required to meet the target etch rate and target etch selectivity. In one embodiment, the vapor water vapor mixture and the treatment liquid system are combined in the supply delivery line before, during, and prior to the chamber. In another embodiment, the vapor water vapor mixture and the treatment liquid are combined prior to exiting the discharge etch processing chamber to the transfer line. ', [0〇57] Figure 11 is a method for increasing the etching rate and etching selectivity of the mask layer of the substrate in the batch etching processing system by using a plurality of nozzles disposed in the bottom processing chamber of the side processing chamber. An exemplary flow chart of 〇. In step 11〇4, the target etch rate and the target etch selectivity of the mask layer for tantalum oxide or germanium are selected. The mask layer can be nitrided gallium nitride, or aluminum nitride, and the like. In step 11A8, a supply of vapor vapour mixture at high pressure is obtained. The supply can be provided by a steam source on the pipeline from a common vapor source in the manufacturing cluster. In step 1112, a supply of processing liquid for delicately engraving the mask layer is obtained. The treatment liquid may comprise acid, acetoic acid/ethylene glycol and the like. In step 1116, the plurality of substrates are engraved in the chamber. In step 1120, the treatment liquid system is dispensed from the chamber to T. In step 1124, a plurality of nozzles are used to combine the vapor-vapor mixture and the flow of the vapor-vapor mixture in the human-side processing chamber to determine the target residual rate of the mask layer and the mask layer on the stone eve. Oxide j Shi Xi ^ target _ selectivity. The disposable mouthpiece is placed in the bottom and/or side of the butterfly processing chamber. The configuration of the multiple nozzles can be changed to ensure that the temperature is ^

16 S 201250817 Sex and after, side engraving uniformity. As described above, the flow rate of the vapor water vapor mixture can be as shown in Figs. 4A, 4B and the data based on the treatment liquid concentration, the aqueous solution temperature, and the vapor pressure = off. As described in the description of item 4B, the flow rate of the vapor-vapor mixture can be used as a variable for controlling the temperature of the treatment liquid, which affects the boiling point of the treatment liquid, and determines the concentration of phosphoric acid in the treatment liquid. . The equilibrium phosphoric acid concentration and temperature affect the etch rate and etch selectivity. =059] ® 12 is an exemplary flow chart for a method of adding a layer of substrate fine rate, silver selectivity in a single substrate processing system. In step (10) 4, the etch rate and the target etch selectivity of the mask layer for the tantalum oxide or germanium, ίίί target completion time. The mask layer can be made of fossilized gallium nitride, or 1 mingming and ·. ΪStep 1208 ^ ' to obtain a supply of steam water vapor mixture under high pressure. This can be done by a steam generator on the pipeline or from a common vapor source in the manufacturing cluster. In step 1212, a treatment liquid for selectively etching the mask layer is obtained. The treatment liquid may contain scaly acid, hydrofluoric acid, or hydrofluoric acid/ethylene glycol and =f. In step 1216, a single substrate is placed in the buttoning processing chamber. In an example, two or more of the processing chambers may be configured to receive the chamber, the vapor-vapor mixture, and the loading substrate. In the = ϊ, 2 spears, the treatment fluid system is dispensed in a 1 worm processing chamber where the dispensing can be performed using a supply line or nozzle. In step 1224, the flow of the vapor water vapor mixture or the liquid is applied to the substrate by one or more nozzles when the substrate is rotated. Optionally, when the nozzle is rotated, the substrate It can be static. In the process of processing liquid and vapor water vapor, it is etched into treatment I or after entering the etching chamber but in combination with delivery = sufficient pressure must be maintained to prevent supply The surface of the medium, then, when entering the processing chamber of the surrounding pressure, the U body will rapidly boil. In another embodiment, the heating acid can be introduced using L° above the substrate, second or more. The multi-nozzle is pre-heated on the surface of the substrate by introducing scaly acid to help maintain the uniformity of the substrate. In another embodiment, the nozzle position and the number of the nozzles can be set such that the heat from the treatment liquid to the substrate The conveying efficiency reaches the maximum of 17 201250817, the second S:: can also spray the steam and water vapor mixture to the back side of the substrate and the equipment to control the details of the optical measuring system of the moving parts, reference survey 5 years September Patent No. 6,943, 9° GE 之 GE job·N 〇Vl The system is in the second GRATINGDIFFRACTI〇N SIGNALS, Nong Qiacheng in the ΪΠί tV frequency second manufacturing cluster 1306 in Figure 7 after the 1 f clothing k cluster 1302, but should still be known, for example, before the manufacturing process.; The second manufacturing cluster 13〇6 may be located in the first fabrication cluster _ resistive layer exposure and/or development photolithography processing, can be performed. In an exemplary embodiment - 'optical measurement produces two jobs The wheel corridor parameters of the group and the Maxwell's equation based on electromagnetic diffraction i ϊϊ ϊϊ ΐ In the embodiment, the optical measurement pure i3Q4 can also be included, and there are complex analog diffraction and complex test diffraction signals. _—or the number of the value of the library 1312. As mentioned above, the amount of the controller can be adjusted, and the measured measurement output signal and the library (4) can be simulated to simulate the Uhfl saki. When matching the thief shot can, one or more values of the contour parameters related to the matching analog diffracted signal of the library are used, and one or more values of the rim parameters used in the dummy substrate are used to manufacture Sample structure. [0063] Secret 1300 consumes _ processor 1316. In the example, 201250817 = benefit 1310 may transmit one or more of the one or more profile parameters to the measurement process 1316. Then 'based on one or more profile parameters determined using the optical measurement system 13〇4 One or more values, the measurement processor 1316 can adjust one or more processing parameters or device settings of the first manufacturing cluster 1302. Based on one or more of the one or more contour parameters determined using the optical metrology system 1304, or Multi-valued 'measurement processor=16 can also be 5 weeks for the second manufacturing cluster 13Q6—or good processing parameters or equipment settings: as described above, the second manufacturing cluster 13〇6 can be before the first manufacturing cluster 13〇2 Or after, the substrate is treated. In another exemplary embodiment, the processor 131 is configured to: use the set of measured diffracted signals as input to the machine learning system 1314, and use the wheel age as the desired output of the machine learning system 1314, To adjust the machine learning system 1314. [0064] FIG. 14 is an exemplary silk diagram of a method of controlling clustering using an etch processing system configured to increase side rate and etch selectivity. In the case of the system described in Section 13, the structure in the substrate can be used, such as determining and utilizing contour parameters of automatic processing and device control, after processing the side with respect to the methods and methods of FIGS. 3 to 2 The exemplary block diagram of the system is measured by the method depicted in Figure 14〇〇. In step ^410, the measurement of the diffracted signal leaving the sample structure is performed using an optical metrology tool. In step 1420, 'measuring the output signal using the ray tracing method, the optical integrity of the optical measurement device, and one or more precision criteria or other scattering methods such as regression, library matching, or machine H learning systems are The measurement of the diffraction signal is made. In step 1430, at least one rim parameter of the sample structure is determined using the output signal. At step 1440 t 'at least - the manufacturing process parameters or device settings are modified using at least one profile parameter of the structure. Referring to FIGS. 6A and 6B, a controller (not shown) may be used to control the flow rate of the batch or single base = side of the body and the vapor-vapor mixture, the force of the treatment liquid, and the order of use of the nozzles. . The program stored in the memory of the controller can be used according to the method of processing the silk distribution Kaisaki _ butterfly (four) system _, (four) (Figure ^ 彳 1 secret material fresh milk curry or Wei compound button selection method The controller is deleted - the state of the company's hidden secrets in the city of Olympia 19 201250817 controller can be related to the smoke treatment system (four), (10) network phase processing system = =., 'controller can use direct connection , ί^; ί 600 ^ 650 ° 1 to the internal network of the customer's location (ie the internal network of the device manufacturer (ie device manufacturer). Again, another:: two should: can be accessed The controllers of the side processing system _, (10), (directly connected to the ur road, or at least the Internet) to exchange data. Embodiments, but various modifications can still be carried out without departing from the present ί. The present invention is based on the same methods and systems as described in the specification, and should not be construed as limiting the present invention to the specific forms shown in the drawings and described above. All such modifications are intended to be included within the scope of the invention. 〇〇l.ffl 1 is an architectural diagram showing the prior art method of nitrite lithography shown in the batch button processing. [=008] Figure 2 shows a demonstration of the prior art batch smashing process. Sexual architecture diagram, the system uses feed water and heaters for etching tantalum nitride. ^ [^009] ® 3 Depicts the dryness diagram of the sulphuric acid point as a function of sulphuric acidity and temperature. [0010] 4A is an exemplary graph of the boiling point of phosphoric acid as a function of phosphoric acid concentration and temperature, and an exemplary graph of vapor pressure as a function of temperature as a mixture equilibrium condition in a silver engraving system. [0011] FIG. 4B is a tank acid An exemplary graph of the boiling point of the linonic acid as a function of concentration and temperature, and an exemplary graph of vapor pressure as a function of the temperature of the equilibrium condition of the mixture under two vapor pressures in an etch processing system. [0012] FIG. An exemplary chart of the composition of a phosphoric acid solution as a function of temperature.

20 S 201250817 Etch Charge of Acid Solution (IV) Phosphorus Diagram as a Function of Time and Temperature Depicting a batch etching process system according to an embodiment of the present invention = 1 ^ according to the embodiment of the present invention - An engraving process is an exemplary schematic diagram of a batch processing system that uses a nozzle to dispense a gas in accordance with an embodiment of the present invention. ...milk of the invention - an outline of the invention includes an exemplary demonstration of an early-based secret processing system for the recovery of the body. - Ports = 018] ® 8A, 8B, and 8C are exemplary schematics of a delivery system for a processing system in several embodiments of the present invention. [0019] FIG. 9 is a pictorial diagram of an alternative method for using a process to increase the mask layer of a substrate for a batch surname processing system in an embodiment of the present invention. [0020] Item 10 is an exemplary flow chart of a method for increasing the mask layer of a substrate for a batch side processing system in the present embodiment. d 迷羊和选[0021] FIG. 11 is a diagram showing the silver engraving rate and selectivity of a mask layer of a substrate using an injection nozzle to process a batch surname processing system in one embodiment of the present invention. "Two = [0022] FIG. 13 is a diagram showing a method of increasing the etching rate and selectivity of a mask layer of a substrate in a single substrate in the embodiment of the present invention. FIG. 13 is an implementation of the present invention. The process control system of the example, the Di diagram, which is used to control the etching using the processing system configured to increase the etching rate and etch the confusing processing system. [0024] FIG. 14 is one of the present inventions. In the embodiment, the "cutting process" configured to add and select the insects is used to control the square of the manufacturing cluster. · / No flow 21 201250817 [Main component symbol description] 10 Architecture Figure 18 Overflow 22 Heater 26 Multiple substrates 34 Input vapor 38 Input vapor 42 Overflow tank 44 Processing chamber 46 - Inflow heat flux + · 50 batches Secondary etching treatment system 58 overflow tank 62 conduction 66 processing chamber 70 heater 74 feed water 78 supply line 90 evaporation of water 94 aqueous solution 300 chart 304 boiling point curve 308 point 312 condition A 400 chart 404 boiling point curve 408 vapor pressure curve 500 chart 504 First Curve 508 Second Curve 550 Chart 201250817 554 High Etch Selectivity 558 Low Etch Selectivity 562 High Name Selective 564 Etch Selective Curve 600 Etch Processing System 604 Overflow Vessel 608 Discharge Outlet 612 Steam Vapor Mixture 614 Vapor Generation 620 Heater 620 Transfer Line 628 Process Liquid 632 Substrate 636 Pipe 640 Etch Processing Chamber 650 Processing System 654 Substrate 658 Vapor Transfer Line 662 Platform 666 Nozzle 670 Supply Transfer Line 674 Steam Water Vapor Mixture 678 Process Liquid 682 Supply Line 700 Batch Etch Processing System 704 Overflow Tank 708 Conduction 716 Heater 720 Inflow Heat Flux 722 Additional Inflow Heat Flux 201250817 724 Second Supply Transfer Line 726 Supply Transfer Line 730 Nozzle 734 Water Evaporation 736 Vapor Water Vapor Mixture 738 Process Liquid 742 Etch Processing Chamber 760 Single Substrate Engraving Processing System 762 Etching Processing Chamber 764 - Supply Line - 766 Vapor Water Vapor Mixture 768 Vapor Input Line 769 Vapor 770 Dissolved Ceria 772 Ceria Injector Line 774 Process Liquid 776 Transfer Line 778 Heating 780 Exclude line 782 Control valve 783 Process liquid recovery system 784 Recycling line 786 Discharge line 788 Platform 790 Nozzle 796 Base-reverse 800 Processing system 804 Multi-component manufacturing system 808 Transfer system 812 Second processing system

24 S 201250817 816 First Processing System 820 Isolation Component 850 Processing System 854 Delivery System 856 First Processing System 858 Second Processing System 862 Isolation Component 870 Processing System 874 Isolation Component 878 Delivery System 882 Second Processing System 886 First Processing System 900 Method 904 Step 908 _ Step 912 Step 916 Step 920 Step 924 Step 1000 Method 1004 Step 1008 Step 1012 Step 1016 Step 1020 Step 1024 Step 1100 Method 1104 Step 1108 Step 1112 Step 201250817 1116 Step 1120 Step 1124 Step 1200 Method 1204 Step 1208 Step 1212 Step 1216 Step 1224 Step 1300 System 1302 First Manufacturing Cluster 1304 Optical Measurement System 1306 Second Manufacturing Cluster 1308 Optical Measurement Tool 1310 Processor 1312 Library 1314 Machine Learning System 1316 Measurement Processor 1400 Block Diagram 1410 Step 1420 Step 1430 Step 1440 Step

Claims (1)

201250817 VII. Patent application scope: ^ An etching rate and etching selectivity system for increasing the mask layer on the substrate, the system comprising: a plurality of substrates comprising the mask layer and a layer of Shixi or Shixia oxide; a human, engraved processing chamber configured to process the plurality of substrates, the processing chamber to 3 for etching the processing liquid of the mask layer in the plurality of substrates, and gas and water 2^=to the treatment The chamber, Satoshi is configured to produce a steamed nit of the steam mixture under the flow rate of the selected target _ rate 二2 mask layer on the selected target side selectivity ratio of Shixi or Shixi oxide The surname is introduced into the processing chamber. 2. A system for applying a full-time item to increase the read rate and the selectivity of the layer on the substrate, wherein the mask layer comprises one of a dream, a chemical, or a gasification. 3. A system for increasing the etch rate and etch selectivity of a mask layer on a substrate as claimed in the scope of claim 2, wherein the treatment liquid is an aqueous phosphoric acid solution. 4. A system for increasing the rate of engraving and side selectivity of a mask layer on a substrate as claimed in claim 2, which is in the range of 10:1 to 1000:1. 5. The scope of the application of the patent range f3 for increasing the side rate of the mask layer on the substrate and the etching selectivity are in the range of 220 degrees of the water phase miscellaneous. 6. The system for increasing the (10) rate selectivity of the mask layer on the substrate, wherein the high pressure steam vapor mixture and the treatment liquid system are before entering the surname processing chamber. Under high pressure, Jihe. 27 _ 201250817 7. The system of claim 2, wherein the vapor water vapor SiiUi system under high pressure is combined under high pressure before leaving the supply transfer line to the side processing chamber. . / = = special = two to increase the rate of the cover layer on the substrate. The flow rate and pressure of the vapor water vapor mixture are subject to (4), the selected rate of tantalum and the tantalum nitride on the stone or stone oxide The selected "the rate of the mask layer on the substrate (4): 吏, ?, the nozzle assembled in the bottom and sides of the processing chamber introduces the rolled water vapor mixture under high pressure into the etching chamber In the room; and the surname is controlled at a rate that leads to the 'set' of the target (four) speed sheep mask layer cut oxides selected by the target side selectivity ratio 1歹1j. =·; / two H she 〒 1 item The ribs increase the touch velocity of the mask layer on the silk hydrofluoric acid/ethylene glycol, where 'both ' = '' * ", the patent fine item 1 is used to increase the mask layer on the substrate The speed and the secret of the Ί ' 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气 蒸气This item shows the silver engraving rate and the target etching selectivity ratio. The method of the masking layer for the engraving rate and the selectivity of the mask, the 28 S 201250817 method comprising: a substrate manufacturing step of 'manufacturing the mask containing the mask B-number substrate; the S layer or the oxide The gas-water vapor mixture supply step 'obtains a high A supply; a treatment liquid supply step of the lower therapeutic gas-vapor mixture, obtains a treatment liquid, sets an etching rate, and sets an etching selectivity ratio for selectively using the mask layer; δ 亥 亥 亥 矽 or 矽 蚀刻 蚀刻 放置 放置 , , , 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥 亥: 乂 The surname is processed in the chamber -; 'milk hydrate injection two of the combined treatment liquid is mixed with the vapor water vapor to maintain the set butterfly rate and the mask layer is selectively aligned with the manipulator. This setting of the suppression cutoff reduces the rate of the fresh layer engraving and the method of etching & sizing, wherein the mask layer contains tantalum nitride. A method of increasing the rate of the mask layer on the substrate and a magnetic &amplitude method, wherein the treatment liquid comprises a water solution. In the thirteenth item of the patent scope, the method of increasing the rate of the mask layer on the substrate and the method of deleting the enclosing method, wherein the setting of the surrogate ratio on the substrate is increased from the price of 1 to 13 The method of degree = ^ wherein the temperature of the aqueous squama solution is in Celsius_to trace 29 201250817 and the system is combined under high dust before entering the rhyme processing chamber. 5 Saki liquid spray ^ (four) to make the lining of the treasury and the / _ part of the assembly of Wei; ί ί ί ΐ 率 ; ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί The side rate of micro, hydrofluoric acid, or hydrofluorocarbon paste and one of them. The grass-reducing layer of yttrium contains the rate and system of the yttrium on the nitrite, gallium nitride, or nitride substrate, to produce the reduction of the worm and the pressure is controlled, and the process is generated to generate the treatment. The boiling point temperature' rate and the target etch selectivity ratio. , /, and temperature, in order to achieve the target etching method θ θ · force on the substrate layer rate and selectivity of the method, the button ί ί ί ί ί ί ί ί 及 及 及 及 及 魏 魏The plurality of substrates are placed and combined with the water vapor mixture at a high pressure; 201250817 The chamber σ is treated with a liquid and a mixture of money and water vapor, and the flow of the water vapor mixture is controlled and the tantalum nitride is controlled. The tantalum or niobium oxidizes the processing liquid combined with the base to maintain a target etching selectivity ratio of the target remnant velocity of the edge nitrogen I fossil. In the 22nd item of the range, the lining speed of the mask layer on the substrate is increased. The liquid contains the yoke, the chlorine ratio and the t-thickness of the mask layer on the substrate. The flow rate and pressure of the water vapor mixture are affected by the level of the treatment liquid: the temperature of the agricultural production point, and the step-by-step production standard scribes the selective tb two-degree balance and the degree of the dish to achieve the _ standard _ rate and the target Eight, schema: 31