KR101799139B1 - 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 - Google Patents

마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 Download PDF

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KR101799139B1
KR101799139B1 KR1020137028696A KR20137028696A KR101799139B1 KR 101799139 B1 KR101799139 B1 KR 101799139B1 KR 1020137028696 A KR1020137028696 A KR 1020137028696A KR 20137028696 A KR20137028696 A KR 20137028696A KR 101799139 B1 KR101799139 B1 KR 101799139B1
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South Korea
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etch
steam
phosphoric acid
substrate
selectivity
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Korean (ko)
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KR20140130622A (ko
Inventor
이안 제이 브라운
왈라스 피 프린츠
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
KR1020137028696A 2011-03-30 2012-03-31 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 Active KR101799139B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/076,272 US20120248061A1 (en) 2011-03-30 2011-03-30 Increasing masking layer etch rate and selectivity
PCT/US2012/031738 WO2013101274A1 (en) 2011-03-30 2012-03-31 Increasing masking layer etch rate and selectivity

Publications (2)

Publication Number Publication Date
KR20140130622A KR20140130622A (ko) 2014-11-11
KR101799139B1 true KR101799139B1 (ko) 2017-11-17

Family

ID=46925858

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Application Number Title Priority Date Filing Date
KR1020137028696A Active KR101799139B1 (ko) 2011-03-30 2012-03-31 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법

Country Status (5)

Country Link
US (1) US20120248061A1 (https=)
JP (1) JP6081442B2 (https=)
KR (1) KR101799139B1 (https=)
TW (1) TWI505350B (https=)
WO (1) WO2013101274A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10062586B2 (en) * 2013-07-26 2018-08-28 Tokyo Electron Limited Chemical fluid processing apparatus and chemical fluid processing method
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP6645900B2 (ja) * 2016-04-22 2020-02-14 キオクシア株式会社 基板処理装置および基板処理方法
JP6732546B2 (ja) * 2016-06-09 2020-07-29 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
JP6972121B2 (ja) * 2016-10-05 2021-11-24 マジック リープ, インコーポレイテッドMagic Leap, Inc. 不均一回折格子の加工
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer
KR102517333B1 (ko) * 2018-12-21 2023-04-03 삼성전자주식회사 습식 식각 시스템 운전 방법 및 관련된 시스템
JP7413113B2 (ja) * 2020-03-24 2024-01-15 株式会社Ｓｃｒｅｅｎホールディングス 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム
CN111785623B (zh) * 2020-06-15 2022-11-04 上海华虹宏力半导体制造有限公司 湿法刻蚀方法
US12237158B2 (en) * 2020-11-24 2025-02-25 Applied Materials, Inc. Etch feedback for control of upstream process
KR102858800B1 (ko) * 2020-12-24 2025-09-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11709477B2 (en) 2021-01-06 2023-07-25 Applied Materials, Inc. Autonomous substrate processing system
US20230062572A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
KR102449897B1 (ko) 2022-01-14 2022-09-30 삼성전자주식회사 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080035609A1 (en) 2003-12-30 2008-02-14 Ismail Kashkoush System And Method for Selective Etching Of Silicon Nitride During Substrate Processing
US20080283090A1 (en) 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

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US3709749A (en) * 1969-12-01 1973-01-09 Fujitsu Ltd Method of etching insulating films
US4092211A (en) * 1976-11-18 1978-05-30 Northern Telecom Limited Control of etch rate of silicon dioxide in boiling phosphoric acid
JPH0810684B2 (ja) * 1989-02-17 1996-01-31 山形日本電気株式会社 半導体装置の製造装置
JPH0350724A (ja) * 1989-07-19 1991-03-05 Hitachi Ltd ウエットエッチング装置
JPH06140380A (ja) * 1992-10-28 1994-05-20 Sanyo Electric Co Ltd エッチング装置
JP2605594B2 (ja) * 1993-09-03 1997-04-30 日本電気株式会社 半導体装置の製造方法
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
JPH10214813A (ja) * 1997-01-31 1998-08-11 Matsushita Electron Corp 半導体ウェーハの洗浄方法および洗浄装置
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
US20070289732A1 (en) * 2004-03-11 2007-12-20 Pillion John E Apparatus for conditioning the temperature of a fluid
JP4471131B2 (ja) * 2007-02-19 2010-06-02 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
WO2012078580A1 (en) * 2010-12-10 2012-06-14 Fsi International, Inc. Process for selectively removing nitride from substrates
US9257292B2 (en) * 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
JP6146109B2 (ja) * 2013-04-26 2017-06-14 新日鐵住金株式会社 粘結補填材の選択方法及びそれを利用した高強度コークスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080035609A1 (en) 2003-12-30 2008-02-14 Ismail Kashkoush System And Method for Selective Etching Of Silicon Nitride During Substrate Processing
US20080283090A1 (en) 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Also Published As

Publication number Publication date
JP2014510417A (ja) 2014-04-24
WO2013101274A1 (en) 2013-07-04
KR20140130622A (ko) 2014-11-11
TWI505350B (zh) 2015-10-21
JP6081442B2 (ja) 2017-02-15
US20120248061A1 (en) 2012-10-04
TW201250817A (en) 2012-12-16

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