JP2014510417A5 - - Google Patents

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Publication number
JP2014510417A5
JP2014510417A5 JP2014502891A JP2014502891A JP2014510417A5 JP 2014510417 A5 JP2014510417 A5 JP 2014510417A5 JP 2014502891 A JP2014502891 A JP 2014502891A JP 2014502891 A JP2014502891 A JP 2014502891A JP 2014510417 A5 JP2014510417 A5 JP 2014510417A5
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JP
Japan
Prior art keywords
mask layer
silicon
water vapor
temperature
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2014502891A
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English (en)
Japanese (ja)
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JP2014510417A (ja
JP6081442B2 (ja
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Publication date
Priority claimed from US13/076,272 external-priority patent/US20120248061A1/en
Application filed filed Critical
Publication of JP2014510417A publication Critical patent/JP2014510417A/ja
Publication of JP2014510417A5 publication Critical patent/JP2014510417A5/ja
Application granted granted Critical
Publication of JP6081442B2 publication Critical patent/JP6081442B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014502891A 2011-03-30 2012-03-31 マスク層のエッチング速度と選択性の増大 Active JP6081442B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/076,272 US20120248061A1 (en) 2011-03-30 2011-03-30 Increasing masking layer etch rate and selectivity
PCT/US2012/031738 WO2013101274A1 (en) 2011-03-30 2012-03-31 Increasing masking layer etch rate and selectivity

Publications (3)

Publication Number Publication Date
JP2014510417A JP2014510417A (ja) 2014-04-24
JP2014510417A5 true JP2014510417A5 (enExample) 2015-05-14
JP6081442B2 JP6081442B2 (ja) 2017-02-15

Family

ID=46925858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014502891A Active JP6081442B2 (ja) 2011-03-30 2012-03-31 マスク層のエッチング速度と選択性の増大

Country Status (5)

Country Link
US (1) US20120248061A1 (enExample)
JP (1) JP6081442B2 (enExample)
KR (1) KR101799139B1 (enExample)
TW (1) TWI505350B (enExample)
WO (1) WO2013101274A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US10062586B2 (en) 2013-07-26 2018-08-28 Tokyo Electron Limited Chemical fluid processing apparatus and chemical fluid processing method
TWI629720B (zh) 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP6645900B2 (ja) * 2016-04-22 2020-02-14 キオクシア株式会社 基板処理装置および基板処理方法
JP6732546B2 (ja) * 2016-06-09 2020-07-29 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
CN110036317B (zh) 2016-10-05 2021-11-26 奇跃公司 制作非均匀衍射光栅
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer
KR102517333B1 (ko) * 2018-12-21 2023-04-03 삼성전자주식회사 습식 식각 시스템 운전 방법 및 관련된 시스템
JP7413113B2 (ja) * 2020-03-24 2024-01-15 株式会社Ｓｃｒｅｅｎホールディングス 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム
CN111785623B (zh) * 2020-06-15 2022-11-04 上海华虹宏力半导体制造有限公司 湿法刻蚀方法
US12237158B2 (en) * 2020-11-24 2025-02-25 Applied Materials, Inc. Etch feedback for control of upstream process
KR102858800B1 (ko) * 2020-12-24 2025-09-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11709477B2 (en) 2021-01-06 2023-07-25 Applied Materials, Inc. Autonomous substrate processing system
US20230062572A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device

Family Cites Families (17)

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US3709749A (en) * 1969-12-01 1973-01-09 Fujitsu Ltd Method of etching insulating films
US4092211A (en) * 1976-11-18 1978-05-30 Northern Telecom Limited Control of etch rate of silicon dioxide in boiling phosphoric acid
JPH0810684B2 (ja) * 1989-02-17 1996-01-31 山形日本電気株式会社 半導体装置の製造装置
JPH0350724A (ja) * 1989-07-19 1991-03-05 Hitachi Ltd ウエットエッチング装置
JPH06140380A (ja) * 1992-10-28 1994-05-20 Sanyo Electric Co Ltd エッチング装置
JP2605594B2 (ja) * 1993-09-03 1997-04-30 日本電気株式会社 半導体装置の製造方法
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
JPH10214813A (ja) * 1997-01-31 1998-08-11 Matsushita Electron Corp 半導体ウェーハの洗浄方法および洗浄装置
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
CN1914710A (zh) * 2003-12-30 2007-02-14 艾奎昂有限责任公司 在基片处理过程中选择性蚀刻氮化硅的系统和方法
US20070289732A1 (en) * 2004-03-11 2007-12-20 Pillion John E Apparatus for conditioning the temperature of a fluid
JP4471131B2 (ja) * 2007-02-19 2010-06-02 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
JP5199339B2 (ja) * 2007-05-18 2013-05-15 ティーイーエル エフエスアイ，インコーポレイティド 水蒸気または蒸気を用いた基板の処理方法
CN110189995A (zh) * 2010-12-10 2019-08-30 东京毅力科创Fsi公司 用于从衬底选择性地移除氮化物的方法
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JP6146109B2 (ja) * 2013-04-26 2017-06-14 新日鐵住金株式会社 粘結補填材の選択方法及びそれを利用した高強度コークスの製造方法

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