KR101799139B1 - 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 - Google Patents

마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 Download PDF

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KR101799139B1
KR101799139B1 KR1020137028696A KR20137028696A KR101799139B1 KR 101799139 B1 KR101799139 B1 KR 101799139B1 KR 1020137028696 A KR1020137028696 A KR 1020137028696A KR 20137028696 A KR20137028696 A KR 20137028696A KR 101799139 B1 KR101799139 B1 KR 101799139B1
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etch
steam
phosphoric acid
substrate
selectivity
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KR20140130622A (ko
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이안 제이 브라운
왈라스 피 프린츠
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
KR1020137028696A 2011-03-30 2012-03-31 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법 Active KR101799139B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/076,272 US20120248061A1 (en) 2011-03-30 2011-03-30 Increasing masking layer etch rate and selectivity
PCT/US2012/031738 WO2013101274A1 (en) 2011-03-30 2012-03-31 Increasing masking layer etch rate and selectivity

Publications (2)

Publication Number Publication Date
KR20140130622A KR20140130622A (ko) 2014-11-11
KR101799139B1 true KR101799139B1 (ko) 2017-11-17

Family

ID=46925858

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KR1020137028696A Active KR101799139B1 (ko) 2011-03-30 2012-03-31 마스크층의 에칭률 및 선택도를 높이기 위한 시스템 및 방법

Country Status (5)

Country Link
US (1) US20120248061A1 (enExample)
JP (1) JP6081442B2 (enExample)
KR (1) KR101799139B1 (enExample)
TW (1) TWI505350B (enExample)
WO (1) WO2013101274A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10062586B2 (en) 2013-07-26 2018-08-28 Tokyo Electron Limited Chemical fluid processing apparatus and chemical fluid processing method
TWI629720B (zh) 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP6645900B2 (ja) * 2016-04-22 2020-02-14 キオクシア株式会社 基板処理装置および基板処理方法
JP6732546B2 (ja) * 2016-06-09 2020-07-29 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
JP6972121B2 (ja) 2016-10-05 2021-11-24 マジック リープ, インコーポレイテッドMagic Leap, Inc. 不均一回折格子の加工
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer
KR102517333B1 (ko) * 2018-12-21 2023-04-03 삼성전자주식회사 습식 식각 시스템 운전 방법 및 관련된 시스템
JP7413113B2 (ja) * 2020-03-24 2024-01-15 株式会社Ｓｃｒｅｅｎホールディングス 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム
CN111785623B (zh) * 2020-06-15 2022-11-04 上海华虹宏力半导体制造有限公司 湿法刻蚀方法
US12237158B2 (en) * 2020-11-24 2025-02-25 Applied Materials, Inc. Etch feedback for control of upstream process
KR102858800B1 (ko) * 2020-12-24 2025-09-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11709477B2 (en) 2021-01-06 2023-07-25 Applied Materials, Inc. Autonomous substrate processing system
US20230062572A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080035609A1 (en) 2003-12-30 2008-02-14 Ismail Kashkoush System And Method for Selective Etching Of Silicon Nitride During Substrate Processing
US20080283090A1 (en) 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

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US3709749A (en) * 1969-12-01 1973-01-09 Fujitsu Ltd Method of etching insulating films
US4092211A (en) * 1976-11-18 1978-05-30 Northern Telecom Limited Control of etch rate of silicon dioxide in boiling phosphoric acid
JPH0810684B2 (ja) * 1989-02-17 1996-01-31 山形日本電気株式会社 半導体装置の製造装置
JPH0350724A (ja) * 1989-07-19 1991-03-05 Hitachi Ltd ウエットエッチング装置
JPH06140380A (ja) * 1992-10-28 1994-05-20 Sanyo Electric Co Ltd エッチング装置
JP2605594B2 (ja) * 1993-09-03 1997-04-30 日本電気株式会社 半導体装置の製造方法
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
JPH10214813A (ja) * 1997-01-31 1998-08-11 Matsushita Electron Corp 半導体ウェーハの洗浄方法および洗浄装置
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
US20070289732A1 (en) * 2004-03-11 2007-12-20 Pillion John E Apparatus for conditioning the temperature of a fluid
JP4471131B2 (ja) * 2007-02-19 2010-06-02 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
WO2012078580A1 (en) * 2010-12-10 2012-06-14 Fsi International, Inc. Process for selectively removing nitride from substrates
US9257292B2 (en) * 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
JP6146109B2 (ja) * 2013-04-26 2017-06-14 新日鐵住金株式会社 粘結補填材の選択方法及びそれを利用した高強度コークスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080035609A1 (en) 2003-12-30 2008-02-14 Ismail Kashkoush System And Method for Selective Etching Of Silicon Nitride During Substrate Processing
US20080283090A1 (en) 2007-05-18 2008-11-20 Dekraker David Process for treatment of substrates with water vapor or steam

Also Published As

Publication number Publication date
JP6081442B2 (ja) 2017-02-15
US20120248061A1 (en) 2012-10-04
TWI505350B (zh) 2015-10-21
JP2014510417A (ja) 2014-04-24
TW201250817A (en) 2012-12-16
WO2013101274A1 (en) 2013-07-04
KR20140130622A (ko) 2014-11-11

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