JP2014511040A5 - - Google Patents

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Publication number
JP2014511040A5
JP2014511040A5 JP2014502892A JP2014502892A JP2014511040A5 JP 2014511040 A5 JP2014511040 A5 JP 2014511040A5 JP 2014502892 A JP2014502892 A JP 2014502892A JP 2014502892 A JP2014502892 A JP 2014502892A JP 2014511040 A5 JP2014511040 A5 JP 2014511040A5
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Japan
Prior art keywords
etching
substrate
mask layer
silicon
processing
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JP2014502892A
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Japanese (ja)
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JP6139505B2 (ja
JP2014511040A (ja
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Priority claimed from US13/076,396 external-priority patent/US9257292B2/en
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JP2014502892A 2011-03-30 2012-03-31 枚葉式基板処理のためのエッチングシステム及び方法 Active JP6139505B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/076,396 US9257292B2 (en) 2011-03-30 2011-03-30 Etch system and method for single substrate processing
PCT/US2012/031739 WO2012135792A1 (en) 2011-03-30 2012-03-31 Etch system and method for single substrate processing

Publications (3)

Publication Number Publication Date
JP2014511040A JP2014511040A (ja) 2014-05-01
JP2014511040A5 true JP2014511040A5 (enExample) 2015-05-14
JP6139505B2 JP6139505B2 (ja) 2017-05-31

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JP2014502892A Active JP6139505B2 (ja) 2011-03-30 2012-03-31 枚葉式基板処理のためのエッチングシステム及び方法

Country Status (5)

Country Link
US (2) US9257292B2 (enExample)
JP (1) JP6139505B2 (enExample)
KR (1) KR101928118B1 (enExample)
TW (1) TWI527111B (enExample)
WO (1) WO2012135792A1 (enExample)

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JP6529625B2 (ja) * 2013-03-29 2019-06-12 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6302708B2 (ja) * 2013-03-29 2018-03-28 芝浦メカトロニクス株式会社 ウェットエッチング装置
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CN106583308A (zh) * 2016-12-13 2017-04-26 成都绿迪科技有限公司 用于单晶硅棒的循环水冲洗装置
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CN109075111A (zh) * 2018-05-17 2018-12-21 长江存储科技有限责任公司 用于改进的化学蚀刻的方法和系统
CN113474875B (zh) * 2019-04-23 2025-03-07 杰宜斯科技有限公司 蚀刻装置及其蚀刻方法
US11075218B2 (en) * 2019-05-22 2021-07-27 Sandisk Technologies Llc Method of making a three-dimensional memory device using silicon nitride etching end point detection
JP7542417B2 (ja) * 2019-12-27 2024-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、基板処理システム、及び学習用データの生成方法
CN113070261A (zh) * 2021-03-30 2021-07-06 苏州阿洛斯环境发生器有限公司 一种单点双流体清洗方法及装置
JP7638138B2 (ja) * 2021-04-20 2025-03-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
KR102389567B1 (ko) * 2021-05-04 2022-04-25 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
JP7665556B2 (ja) 2022-03-24 2025-04-21 芝浦メカトロニクス株式会社 処理液供給装置、基板処理装置及び処理液供給装置の検査方法
CN115376915A (zh) * 2022-10-27 2022-11-22 合肥新晶集成电路有限公司 选择性蚀刻方法及装置

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