JP2014511040A - 枚葉式基板処理のためのエッチングシステム及び方法 - Google Patents
枚葉式基板処理のためのエッチングシステム及び方法 Download PDFInfo
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Abstract
Description
p=p*AxA+p*BxB+・・・
で表される。各成文の個々の蒸気圧は、
pi=p*ixi
で表される。ここで、piは混合物中での成分iの分圧で、p*iは純粋な成分iの蒸気圧で、xiは溶液(混合物)中での成分iのモル分率である。
Claims (32)
- 基板上のマスク層のエッチング速度と選択性を増大させる枚葉式基板処理用エッチング処理システムであって:
前記マスク層とシリコン又はシリコン酸化物の層を含む基板;
前記基板を静止モード又は回転モードで保持して前記基板をエッチングするエッチング処理チャンバ;
前記エッチング処理チャンバと結合して高圧で蒸気と水蒸気の混合物を供給する沸騰装置;
前記シリコン又はシリコン酸化物の層に対する前記マスク層のエッチング選択比を実現するように選択される処理液体を含む処理液体源;及び、
供給ラインと2つ以上のノズルを有する処理液体供給システム;
を有し、
前記蒸気と水蒸気の混合物と前記処理液体が、前記エッチング処理チャンバへ流入する前に昇圧して混合され、かつ、前記の混合された蒸気と水蒸気の混合物と処理液体が前記供給ライン内で沸騰するのを防止するのに十分な流速と圧力で導入され、
目標エッチング速度と、前記シリコン又はシリコン酸化物の層に対する前記マスク層の目標エッチング選択比を維持する、
システム。 - 前記の選択されたエッチング速度が120Å/分よりも速い、請求項1に記載のシステム。
- 前記マスク層がシリコン窒化物を有し、
前記処理液体が溶融シリカを含むリン酸水溶液である、
請求項2に記載のシステム。 - 前記選択されたエッチング選択比が10:1乃至1000:1の範囲内である、請求項3に記載のシステム。
- 前記リン酸水溶液の温度が160℃乃至220℃の範囲内である、請求項3に記載のシステム。
- 前記蒸気と水蒸気の混合物の流速が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対するシリコン窒化物の選択された目標エッチング選択比を維持するように制御される、請求項3に記載のシステム。
- 前記処理液体が、リン酸、フッ化水素、又はフッ化水素/エチレングリコールのうちの一を含む、請求項1に記載のシステム。
- 前記マスク層が、シリコン窒化物、窒化ガリウム、又は窒化アルミニウムのうちの一を有する、請求項1に記載のシステム。
- 前記基板が中心部と端部を有し、かつ、
上記が、前記基板の中心部から端部までの均一な温度を維持するように前記基板を予熱するために導入される、
請求項1に記載のシステム。 - 前記マスク層の目標エッチング速度が、3分以内にエッチング処理を完了させる、請求項1に記載のシステム。
- 前記エッチング処理チャンバが複数の部分に分かれたエッチング処理チャンバを有し、
前記複数の部分に分かれたエッチング処理チャンバの各部分は、1枚の基板を処理するように構成され、かつ、
前記複数の部分に分かれたエッチング処理チャンバの各部分に対して基板を搬入出することの可能な基板搬送システムをさらに有する、
請求項1に記載のシステム。 - 前記エッチング処理チャンバと結合して、前記処理液体の一部を再循環させる処理液体再循環システムをさらに有する、請求項1に記載のシステム。
- 前記処理液体システムがシリカ注入ラインを有し、
前記シリカ注入ラインは、前記処理液体へシリカを導入するように構成される、
請求項12に記載のシステム。 - 少なくとも1層のシリコン窒化物を含む複数の基板が、前記処理液体内で目標シリカ濃度を実現するように処理される、請求項12に記載のシステム。
- 基板上のマスク層のエッチング速度と選択性を増大させる枚葉式基板処理用エッチング処理システムであって:
前記マスク層とシリコン又はシリコン酸化物の層を含む基板;
前記基板を静止モード又は回転モードで保持して前記基板をエッチングするエッチング処理チャンバ;
前記エッチング処理チャンバと結合して高圧で蒸気と水蒸気の混合物を供給する沸騰装置;
前記シリコン又はシリコン酸化物の層に対する前記マスク層のエッチング選択比を実現するように選択される処理液体を含む処理液体源;及び、
供給ラインと2つ以上のノズルを有する処理液体供給システム;
を有し、
当該エッチング処理システムは、目標エッチング速度と、前記シリコン又はシリコン酸化物の層に対する前記マスク層の目標エッチング選択比を維持し、
前記2つ以上のノズルは:
前記基板を予熱するように蒸気と水蒸気の混合物を導入する第1ノズル;
前記の混合された処理液体と蒸気と水蒸気の混合物を導入する第2ノズル;及び、
温度の均一性を維持するように前記基板の背面に蒸気と水蒸気の混合物を導入する第3ノズル;
を有する、
システム。 - 前記マスク層がシリコン窒化物を有し、
前記処理液体が溶融シリカを含むリン酸水溶液である、
請求項15に記載のシステム。 - エッチング処理チャンバを有する枚葉式基板処理用エッチング処理システム内に設けられる基板上のマスク層のエッチング速度と選択性を増大させる方法であって:
昇圧して蒸気と水蒸気の混合物を供給する工程;
設定されたエッチング速度及び設定されたエッチング選択比で処理液体を供給して前記シリコン又はシリコン酸化物に対して前記マスク層を選択的にエッチングする工程;
前記エッチング処理チャンバ内に前記基板を設ける工程;
前記処理液体と前記蒸気と水蒸気の混合物を混合する工程;及び、
前記の混合された処理液体と蒸気と水蒸気の混合物を前記エッチング処理チャンバへ注入する工程;
を有し、
前記の混合された処理液体と蒸気と水蒸気の混合物の流れは、前記設定されたエッチング速度及び前記設定されたシリコン又はシリコン酸化物に対する前記マスク層のエッチング選択比を維持するように制御される、
方法。 - 前記マスク層がシリコン窒化物を有し、
前記処理液体が溶融シリカを含むリン酸水溶液である、
請求項17に記載の方法。 - 前記選択されたエッチング選択比が10:1乃至1000:1の範囲内である、請求項17に記載の方法。
- 前記リン酸水溶液の温度が160℃乃至220℃の範囲内である、請求項17に記載の方法。
- 前記昇圧した蒸気と水蒸気の混合物と前記処理液体が、前記エッチング処理チャンバへ流入する前に高圧で混合される、請求項17に記載の方法。
- 前記蒸気と水蒸気の混合物の流速が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対するシリコン窒化物の選択された目標エッチング選択比を維持するように制御される、
- 前記注入する工程がノズルを用い、かつ、
前記蒸気と水蒸気の混合物は、シリコン又はシリコン酸化物に対するシリコン窒化物の前記の選択されたエッチング選択比を維持するように制御された速度で導入される、
請求項17に記載の方法。 - 前記処理液体が、リン酸、フッ化水素、又はフッ化水素/エチレングリコールのうちの一を含み、かつ、
前記マスク層がシリコン窒化物である、
請求項17に記載の方法。 - 前記マスク層の目標エッチング速度が、3分以内にエッチング処理を完了させる、請求項17に記載の方法。
- 前記エッチング処理チャンバが複数の部分に分かれたエッチング処理チャンバを有し、
前記複数の部分に分かれたエッチング処理チャンバの各部分は、1枚の基板を処理するように構成され、かつ、
前記複数の部分に分かれたエッチング処理チャンバの各部分に対して基板を搬入出することの可能な基板搬送システムをさらに有する、
請求項17に記載の方法。 - エッチング処理チャンバを有する枚葉式基板処理用エッチング処理システム内に設けられる基板上のマスク層のエッチング速度と選択性を増大させる方法であって:
昇圧して蒸気と水蒸気の混合物を供給する工程;
設定されたエッチング速度及び設定されたエッチング選択比で処理液体を供給して前記シリコン又はシリコン酸化物に対して前記マスク層を選択的にエッチングする工程;
前記エッチング処理チャンバ内に前記基板を設ける工程;及び、
前記処理液体と前記蒸気と水蒸気の混合物を前記エッチング処理チャンバへ注入する工程;
を有し、
前記処理液体と前記蒸気と水蒸気の混合物の流れは、前記設定されたエッチング速度及び前記設定されたシリコン又はシリコン酸化物に対する前記マスク層のエッチング選択比を維持するように制御される、
方法。 - 前記マスク層がシリコン窒化物を有し、
前記処理液体が溶融シリカを含むリン酸水溶液である、
請求項27に記載の方法。 - 前記処理液体の一部を再循環させる工程をさらに有する、請求項27に記載の方法。
- 前記処理液体中での目標シリカ濃度を維持する工程をさらに有する、請求項27に記載の方法。
- 前記処理液体中での目標シリカ濃度を維持する工程が、前記処理液体へのシリカの導入又は少なくとも1層のシリコン窒化物を含む複数の基板の処理によって実現され、
前記の処理される複数の基板の数は、前記目標シリカ濃度によって決定される、
請求項30に記載の方法。 - 前記蒸気と水蒸気の混合物の流速と圧力が、前記処理液体の温度を沸騰温度に変化させ、
前記処理液体の平衡濃度と温度が、前記選択された目標エッチング速度と、前記シリコン又はシリコン酸化物に対する前記マスク層の選択された目標エッチング選択比を実現させる、
請求項30に記載の方法。
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TWI527111B (zh) | 2016-03-21 |
JP6139505B2 (ja) | 2017-05-31 |
US20120247505A1 (en) | 2012-10-04 |
KR20140130623A (ko) | 2014-11-11 |
US20160155647A1 (en) | 2016-06-02 |
KR101928118B1 (ko) | 2018-12-11 |
US9852920B2 (en) | 2017-12-26 |
TW201246354A (en) | 2012-11-16 |
US9257292B2 (en) | 2016-02-09 |
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