JP2013545319A5 - - Google Patents
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- Publication number
- JP2013545319A5 JP2013545319A5 JP2013543252A JP2013543252A JP2013545319A5 JP 2013545319 A5 JP2013545319 A5 JP 2013545319A5 JP 2013543252 A JP2013543252 A JP 2013543252A JP 2013543252 A JP2013543252 A JP 2013543252A JP 2013545319 A5 JP2013545319 A5 JP 2013545319A5
- Authority
- JP
- Japan
- Prior art keywords
- sulfuric acid
- mixed
- mixed acidic
- phosphoric acid
- stream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 30
- 238000000034 method Methods 0.000 claims 29
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 15
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 14
- 239000007788 liquid Substances 0.000 claims 12
- 230000002378 acidificating effect Effects 0.000 claims 11
- 239000003929 acidic solution Substances 0.000 claims 9
- 239000000243 solution Substances 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000000443 aerosol Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42180810P | 2010-12-10 | 2010-12-10 | |
| US61/421,808 | 2010-12-10 | ||
| PCT/US2011/063441 WO2012078580A1 (en) | 2010-12-10 | 2011-12-06 | Process for selectively removing nitride from substrates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013545319A JP2013545319A (ja) | 2013-12-19 |
| JP2013545319A5 true JP2013545319A5 (enExample) | 2015-01-29 |
| JP6236320B2 JP6236320B2 (ja) | 2017-11-22 |
Family
ID=46198261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013543252A Expired - Fee Related JP6236320B2 (ja) | 2010-12-10 | 2011-12-06 | 基板から窒化物を選択的に除去する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9059104B2 (enExample) |
| JP (1) | JP6236320B2 (enExample) |
| KR (1) | KR101837226B1 (enExample) |
| CN (2) | CN110189995A (enExample) |
| TW (1) | TWI528432B (enExample) |
| WO (1) | WO2012078580A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012074601A (ja) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| US20120248061A1 (en) * | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Increasing masking layer etch rate and selectivity |
| US9257292B2 (en) | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
| US9355874B2 (en) * | 2011-09-24 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon nitride etching in a single wafer apparatus |
| JP5854230B2 (ja) * | 2012-12-13 | 2016-02-09 | 栗田工業株式会社 | 基板洗浄液および基板洗浄方法 |
| US9017568B2 (en) | 2013-01-22 | 2015-04-28 | Tel Fsi, Inc. | Process for increasing the hydrophilicity of silicon surfaces following HF treatment |
| US8871108B2 (en) * | 2013-01-22 | 2014-10-28 | Tel Fsi, Inc. | Process for removing carbon material from substrates |
| JP6352385B2 (ja) * | 2013-03-15 | 2018-07-04 | ティーイーエル エフエスアイ，インコーポレイティド | 加熱されたエッチング溶液を供する処理システム及び方法 |
| US20140332034A1 (en) * | 2013-05-08 | 2014-11-13 | Tel Fsi, Inc. | Process comprising water vapor for haze elimination and residue removal |
| JP6225067B2 (ja) * | 2013-06-21 | 2017-11-01 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| TWI578396B (zh) * | 2013-12-11 | 2017-04-11 | 斯克林集團公司 | 基板處理方法及基板處理裝置 |
| JP6434367B2 (ja) * | 2015-05-14 | 2018-12-05 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
| TWI629720B (zh) * | 2015-09-30 | 2018-07-11 | Tokyo Electron Limited | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
| GB201815163D0 (en) * | 2018-09-18 | 2018-10-31 | Lam Res Ag | Wafer washing method and apparatus |
| JP7209556B2 (ja) * | 2019-02-05 | 2023-01-20 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| CN111829941A (zh) * | 2020-05-27 | 2020-10-27 | 盐城工学院 | 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法 |
| JP7779723B2 (ja) * | 2021-12-17 | 2025-12-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| CN119452061A (zh) * | 2022-05-13 | 2025-02-14 | 恩特格里斯公司 | 氮化硅蚀刻组合物和方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885903A (en) * | 1997-01-22 | 1999-03-23 | Micron Technology, Inc. | Process for selectively etching silicon nitride in the presence of silicon oxide |
| TW380284B (en) * | 1998-09-09 | 2000-01-21 | Promos Technologies Inc | Method for improving etching uniformity during a wet etching process |
| US6406551B1 (en) | 1999-05-14 | 2002-06-18 | Fsi International, Inc. | Method for treating a substrate with heat sensitive agents |
| US6488272B1 (en) | 2000-06-07 | 2002-12-03 | Simplus Systems Corporation | Liquid delivery system emulsifier |
| US6835667B2 (en) | 2002-06-14 | 2004-12-28 | Fsi International, Inc. | Method for etching high-k films in solutions comprising dilute fluoride species |
| JP4494840B2 (ja) | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
| EP1704586A1 (en) * | 2003-12-30 | 2006-09-27 | Akrion Llc | System and method for selective etching of silicon nitride during substrate processing |
| JP4439956B2 (ja) | 2004-03-16 | 2010-03-24 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
| JP4495022B2 (ja) | 2005-03-30 | 2010-06-30 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| KR101255048B1 (ko) | 2005-04-01 | 2013-04-16 | 에프에스아이 인터내쇼날 인크. | 하나 이상의 처리 유체를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는데 이용되는 장치용 배리어 구조 및 노즐 장치 |
| JP4986566B2 (ja) * | 2005-10-14 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| KR20090130197A (ko) | 2005-11-23 | 2009-12-18 | 에프 에스 아이 인터내셔날,인코포레이티드 | 기판으로부터의 물질 제거 공정 |
| JP5181085B2 (ja) * | 2006-06-22 | 2013-04-10 | リバーベル株式会社 | 処理装置及び処理方法 |
| JP2009543338A (ja) | 2006-07-07 | 2009-12-03 | エフエスアイ インターナショナル インコーポレーテッド | １つ以上の処理流体によりマイクロエレクトロニクス半製品を処理するために用いられる道具において使われる隔壁構造およびノズル装置 |
| JP4799332B2 (ja) * | 2006-09-12 | 2011-10-26 | 株式会社東芝 | エッチング液、エッチング方法および電子部品の製造方法 |
| KR101282714B1 (ko) * | 2007-05-18 | 2013-07-05 | 에프에스아이 인터내쇼날 인크. | 수증기 또는 스팀을 이용하여 기판을 처리하는 방법 |
| US8235062B2 (en) | 2008-05-09 | 2012-08-07 | Fsi International, Inc. | Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation |
| US9355874B2 (en) | 2011-09-24 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon nitride etching in a single wafer apparatus |
-
2011
- 2011-12-06 KR KR1020137015044A patent/KR101837226B1/ko not_active Expired - Fee Related
- 2011-12-06 CN CN201910535292.1A patent/CN110189995A/zh active Pending
- 2011-12-06 US US13/312,148 patent/US9059104B2/en active Active
- 2011-12-06 CN CN2011800534639A patent/CN103348452A/zh active Pending
- 2011-12-06 JP JP2013543252A patent/JP6236320B2/ja not_active Expired - Fee Related
- 2011-12-06 WO PCT/US2011/063441 patent/WO2012078580A1/en not_active Ceased
- 2011-12-09 TW TW100145642A patent/TWI528432B/zh not_active IP Right Cessation
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