TWI528432B - 自基板選擇性移除氮化物之方法 - Google Patents
自基板選擇性移除氮化物之方法 Download PDFInfo
- Publication number
- TWI528432B TWI528432B TW100145642A TW100145642A TWI528432B TW I528432 B TWI528432 B TW I528432B TW 100145642 A TW100145642 A TW 100145642A TW 100145642 A TW100145642 A TW 100145642A TW I528432 B TWI528432 B TW I528432B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- acid
- stream
- mixed
- sulfuric acid
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 title claims description 73
- 150000004767 nitrides Chemical class 0.000 title description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 143
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 106
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 90
- 239000002253 acid Substances 0.000 claims description 64
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 53
- 239000007788 liquid Substances 0.000 claims description 51
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 11
- 239000008263 liquid aerosol Substances 0.000 claims description 9
- 239000006193 liquid solution Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 55
- 239000000203 mixture Substances 0.000 description 32
- 239000000243 solution Substances 0.000 description 27
- 239000007921 spray Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 230000008901 benefit Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000009835 boiling Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000443 aerosol Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42180810P | 2010-12-10 | 2010-12-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201246334A TW201246334A (en) | 2012-11-16 |
| TWI528432B true TWI528432B (zh) | 2016-04-01 |
Family
ID=46198261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100145642A TWI528432B (zh) | 2010-12-10 | 2011-12-09 | 自基板選擇性移除氮化物之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9059104B2 (enExample) |
| JP (1) | JP6236320B2 (enExample) |
| KR (1) | KR101837226B1 (enExample) |
| CN (2) | CN110189995A (enExample) |
| TW (1) | TWI528432B (enExample) |
| WO (1) | WO2012078580A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012074601A (ja) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| US9257292B2 (en) * | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
| US20120248061A1 (en) * | 2011-03-30 | 2012-10-04 | Tokyo Electron Limited | Increasing masking layer etch rate and selectivity |
| US9355874B2 (en) * | 2011-09-24 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon nitride etching in a single wafer apparatus |
| JP5854230B2 (ja) * | 2012-12-13 | 2016-02-09 | 栗田工業株式会社 | 基板洗浄液および基板洗浄方法 |
| US9017568B2 (en) | 2013-01-22 | 2015-04-28 | Tel Fsi, Inc. | Process for increasing the hydrophilicity of silicon surfaces following HF treatment |
| US8871108B2 (en) * | 2013-01-22 | 2014-10-28 | Tel Fsi, Inc. | Process for removing carbon material from substrates |
| JP6352385B2 (ja) * | 2013-03-15 | 2018-07-04 | ティーイーエル エフエスアイ，インコーポレイティド | 加熱されたエッチング溶液を供する処理システム及び方法 |
| CN105121040B (zh) * | 2013-05-08 | 2018-04-10 | 东京毅力科创Fsi公司 | 用于雾度消除和残留物去除的包括水蒸气的方法 |
| JP6225067B2 (ja) * | 2013-06-21 | 2017-11-01 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| TWI578396B (zh) * | 2013-12-11 | 2017-04-11 | 斯克林集團公司 | 基板處理方法及基板處理裝置 |
| JP6434367B2 (ja) * | 2015-05-14 | 2018-12-05 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
| TWI629720B (zh) * | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
| GB201815163D0 (en) * | 2018-09-18 | 2018-10-31 | Lam Res Ag | Wafer washing method and apparatus |
| JP7209556B2 (ja) * | 2019-02-05 | 2023-01-20 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| CN111829941A (zh) * | 2020-05-27 | 2020-10-27 | 盐城工学院 | 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法 |
| JP7779723B2 (ja) * | 2021-12-17 | 2025-12-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法 |
| US20230365863A1 (en) * | 2022-05-13 | 2023-11-16 | Entegris, Inc. | Silicon nitride etching compositions and method |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885903A (en) | 1997-01-22 | 1999-03-23 | Micron Technology, Inc. | Process for selectively etching silicon nitride in the presence of silicon oxide |
| TW380284B (en) * | 1998-09-09 | 2000-01-21 | Promos Technologies Inc | Method for improving etching uniformity during a wet etching process |
| US6406551B1 (en) | 1999-05-14 | 2002-06-18 | Fsi International, Inc. | Method for treating a substrate with heat sensitive agents |
| US6488272B1 (en) | 2000-06-07 | 2002-12-03 | Simplus Systems Corporation | Liquid delivery system emulsifier |
| US6835667B2 (en) | 2002-06-14 | 2004-12-28 | Fsi International, Inc. | Method for etching high-k films in solutions comprising dilute fluoride species |
| JP4494840B2 (ja) * | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
| CN1914710A (zh) * | 2003-12-30 | 2007-02-14 | 艾奎昂有限责任公司 | 在基片处理过程中选择性蚀刻氮化硅的系统和方法 |
| JP4439956B2 (ja) | 2004-03-16 | 2010-03-24 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
| JP4495022B2 (ja) | 2005-03-30 | 2010-06-30 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| KR100993311B1 (ko) | 2005-04-01 | 2010-11-09 | 에프에스아이 인터내쇼날 인크. | 하나 이상의 처리 유체로 마이크로일렉트로닉 작업물을 처리하는 장치용 이동 및 중첩 가능한 배플들을 포함하는 소형 덕트 시스템 |
| JP4986566B2 (ja) * | 2005-10-14 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
| JP4728402B2 (ja) | 2005-11-23 | 2011-07-20 | エフエスアイ インターナショナル インコーポレーテッド | 支持体から物質を除去する方法 |
| JP5181085B2 (ja) | 2006-06-22 | 2013-04-10 | リバーベル株式会社 | 処理装置及び処理方法 |
| CN101484974B (zh) | 2006-07-07 | 2013-11-06 | Fsi国际公司 | 用于处理微电子工件的设备和方法以及遮挡结构 |
| JP4799332B2 (ja) * | 2006-09-12 | 2011-10-26 | 株式会社東芝 | エッチング液、エッチング方法および電子部品の製造方法 |
| JP5199339B2 (ja) * | 2007-05-18 | 2013-05-15 | ティーイーエル エフエスアイ，インコーポレイティド | 水蒸気または蒸気を用いた基板の処理方法 |
| CN102683249B (zh) | 2008-05-09 | 2015-06-17 | 泰尔Fsi公司 | 用于处理微电子工件的系统 |
| US9355874B2 (en) | 2011-09-24 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon nitride etching in a single wafer apparatus |
-
2011
- 2011-12-06 CN CN201910535292.1A patent/CN110189995A/zh active Pending
- 2011-12-06 KR KR1020137015044A patent/KR101837226B1/ko not_active Expired - Fee Related
- 2011-12-06 US US13/312,148 patent/US9059104B2/en active Active
- 2011-12-06 WO PCT/US2011/063441 patent/WO2012078580A1/en not_active Ceased
- 2011-12-06 CN CN2011800534639A patent/CN103348452A/zh active Pending
- 2011-12-06 JP JP2013543252A patent/JP6236320B2/ja not_active Expired - Fee Related
- 2011-12-09 TW TW100145642A patent/TWI528432B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US9059104B2 (en) | 2015-06-16 |
| TW201246334A (en) | 2012-11-16 |
| CN110189995A (zh) | 2019-08-30 |
| JP2013545319A (ja) | 2013-12-19 |
| KR101837226B1 (ko) | 2018-03-09 |
| US20120145672A1 (en) | 2012-06-14 |
| JP6236320B2 (ja) | 2017-11-22 |
| CN103348452A (zh) | 2013-10-09 |
| WO2012078580A1 (en) | 2012-06-14 |
| KR20140063498A (ko) | 2014-05-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |