CN110189995A - 用于从衬底选择性地移除氮化物的方法 - Google Patents

用于从衬底选择性地移除氮化物的方法 Download PDF

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Publication number
CN110189995A
CN110189995A CN201910535292.1A CN201910535292A CN110189995A CN 110189995 A CN110189995 A CN 110189995A CN 201910535292 A CN201910535292 A CN 201910535292A CN 110189995 A CN110189995 A CN 110189995A
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CN
China
Prior art keywords
acid
mixed
substrate
sulfuric acid
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910535292.1A
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English (en)
Chinese (zh)
Inventor
安东尼·S·拉特科维奇
杰弗里·W·布特鲍
大卫·S·贝克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI International Inc filed Critical FSI International Inc
Publication of CN110189995A publication Critical patent/CN110189995A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201910535292.1A 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法 Pending CN110189995A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42180810P 2010-12-10 2010-12-10
US61/421,808 2010-12-10
CN2011800534639A CN103348452A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2011800534639A Division CN103348452A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Publications (1)

Publication Number Publication Date
CN110189995A true CN110189995A (zh) 2019-08-30

Family

ID=46198261

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910535292.1A Pending CN110189995A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法
CN2011800534639A Pending CN103348452A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011800534639A Pending CN103348452A (zh) 2010-12-10 2011-12-06 用于从衬底选择性地移除氮化物的方法

Country Status (6)

Country Link
US (1) US9059104B2 (enExample)
JP (1) JP6236320B2 (enExample)
KR (1) KR101837226B1 (enExample)
CN (2) CN110189995A (enExample)
TW (1) TWI528432B (enExample)
WO (1) WO2012078580A1 (enExample)

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JP2012074601A (ja) * 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20120248061A1 (en) * 2011-03-30 2012-10-04 Tokyo Electron Limited Increasing masking layer etch rate and selectivity
US9257292B2 (en) 2011-03-30 2016-02-09 Tokyo Electron Limited Etch system and method for single substrate processing
US9355874B2 (en) * 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus
JP5854230B2 (ja) * 2012-12-13 2016-02-09 栗田工業株式会社 基板洗浄液および基板洗浄方法
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
JP6352385B2 (ja) * 2013-03-15 2018-07-04 ティーイーエル エフエスアイ，インコーポレイティド 加熱されたエッチング溶液を供する処理システム及び方法
US20140332034A1 (en) * 2013-05-08 2014-11-13 Tel Fsi, Inc. Process comprising water vapor for haze elimination and residue removal
JP6225067B2 (ja) * 2013-06-21 2017-11-01 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP6434367B2 (ja) * 2015-05-14 2018-12-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
TWI629720B (zh) * 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備
GB201815163D0 (en) * 2018-09-18 2018-10-31 Lam Res Ag Wafer washing method and apparatus
JP7209556B2 (ja) * 2019-02-05 2023-01-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN111829941A (zh) * 2020-05-27 2020-10-27 盐城工学院 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
CN119452061A (zh) * 2022-05-13 2025-02-14 恩特格里斯公司 氮化硅蚀刻组合物和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) * 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
TW200814181A (en) * 2006-09-12 2008-03-16 Toshiba Kk Etching liquid, etching method, and method of manufacturing electronic component
CN101681827A (zh) * 2007-05-18 2010-03-24 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

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TW380284B (en) * 1998-09-09 2000-01-21 Promos Technologies Inc Method for improving etching uniformity during a wet etching process
US6406551B1 (en) 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6488272B1 (en) 2000-06-07 2002-12-03 Simplus Systems Corporation Liquid delivery system emulsifier
US6835667B2 (en) 2002-06-14 2004-12-28 Fsi International, Inc. Method for etching high-k films in solutions comprising dilute fluoride species
JP4494840B2 (ja) 2003-06-27 2010-06-30 大日本スクリーン製造株式会社 異物除去装置、基板処理装置および基板処理方法
EP1704586A1 (en) * 2003-12-30 2006-09-27 Akrion Llc System and method for selective etching of silicon nitride during substrate processing
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
JP4495022B2 (ja) 2005-03-30 2010-06-30 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
KR101255048B1 (ko) 2005-04-01 2013-04-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는데 이용되는 장치용 배리어 구조 및 노즐 장치
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
KR20090130197A (ko) 2005-11-23 2009-12-18 에프 에스 아이 인터내셔날,인코포레이티드 기판으로부터의 물질 제거 공정
JP5181085B2 (ja) * 2006-06-22 2013-04-10 リバーベル株式会社 処理装置及び処理方法
JP2009543338A (ja) 2006-07-07 2009-12-03 エフエスアイ インターナショナル インコーポレーテッド １つ以上の処理流体によりマイクロエレクトロニクス半製品を処理するために用いられる道具において使われる隔壁構造およびノズル装置
US8235062B2 (en) 2008-05-09 2012-08-07 Fsi International, Inc. Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation
US9355874B2 (en) 2011-09-24 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon nitride etching in a single wafer apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087273A (en) * 1997-01-22 2000-07-11 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
TW200814181A (en) * 2006-09-12 2008-03-16 Toshiba Kk Etching liquid, etching method, and method of manufacturing electronic component
CN101681827A (zh) * 2007-05-18 2010-03-24 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

Also Published As

Publication number Publication date
CN103348452A (zh) 2013-10-09
JP2013545319A (ja) 2013-12-19
JP6236320B2 (ja) 2017-11-22
KR20140063498A (ko) 2014-05-27
WO2012078580A1 (en) 2012-06-14
TWI528432B (zh) 2016-04-01
US9059104B2 (en) 2015-06-16
TW201246334A (en) 2012-11-16
KR101837226B1 (ko) 2018-03-09
US20120145672A1 (en) 2012-06-14

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