JP2014501016A5 - - Google Patents

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Publication number
JP2014501016A5
JP2014501016A5 JP2013540186A JP2013540186A JP2014501016A5 JP 2014501016 A5 JP2014501016 A5 JP 2014501016A5 JP 2013540186 A JP2013540186 A JP 2013540186A JP 2013540186 A JP2013540186 A JP 2013540186A JP 2014501016 A5 JP2014501016 A5 JP 2014501016A5
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JP
Japan
Prior art keywords
power supply
supply voltage
internal power
voltage generator
regulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013540186A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014501016A (ja
JP5623653B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/CA2011/000528 external-priority patent/WO2012068664A1/en
Publication of JP2014501016A publication Critical patent/JP2014501016A/ja
Publication of JP2014501016A5 publication Critical patent/JP2014501016A5/ja
Application granted granted Critical
Publication of JP5623653B2 publication Critical patent/JP5623653B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013540186A 2010-11-23 2011-05-03 集積回路デバイス内の内部電源を共有するための方法および装置 Expired - Fee Related JP5623653B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41643710P 2010-11-23 2010-11-23
US61/416,437 2010-11-23
PCT/CA2011/000528 WO2012068664A1 (en) 2010-11-23 2011-05-03 Method and apparatus for sharing internal power supplies in integrated circuit devices

Publications (3)

Publication Number Publication Date
JP2014501016A JP2014501016A (ja) 2014-01-16
JP2014501016A5 true JP2014501016A5 (enExample) 2014-05-01
JP5623653B2 JP5623653B2 (ja) 2014-11-12

Family

ID=46064267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013540186A Expired - Fee Related JP5623653B2 (ja) 2010-11-23 2011-05-03 集積回路デバイス内の内部電源を共有するための方法および装置

Country Status (6)

Country Link
US (2) US8625352B2 (enExample)
EP (1) EP2643835A1 (enExample)
JP (1) JP5623653B2 (enExample)
KR (1) KR20130140782A (enExample)
CN (1) CN103229240B (enExample)
WO (1) WO2012068664A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8913443B2 (en) * 2011-09-19 2014-12-16 Conversant Intellectual Property Management Inc. Voltage regulation for 3D packages and method of manufacturing same
US9318186B1 (en) * 2014-12-31 2016-04-19 Nanya Technology Corporation DRAM wordline control circuit, DRAM module and method of controlling DRAM wordline voltage
TWI560718B (en) * 2015-03-27 2016-12-01 Silicon Motion Inc Data storage device and encoding method thereof
JP7685349B2 (ja) * 2021-03-18 2025-05-29 キオクシア株式会社 半導体記憶装置
US11816357B2 (en) * 2021-08-12 2023-11-14 Micron Technology, Inc. Voltage regulation distribution for stacked memory

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
US5197029A (en) 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array
JPH1070243A (ja) * 1996-05-30 1998-03-10 Toshiba Corp 半導体集積回路装置およびその検査方法およびその検査装置
US6750527B1 (en) * 1996-05-30 2004-06-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method
KR100284916B1 (ko) * 1997-07-29 2001-03-15 니시무로 타이죠 반도체 기억 장치 및 그 기입 제어 방법
KR100399773B1 (ko) 2001-02-08 2003-09-26 삼성전자주식회사 메모리슬롯별 서로 다른 기준전압을 갖는 반도체 메모리장치
JP2003036673A (ja) * 2001-07-24 2003-02-07 Mitsubishi Electric Corp 半導体記憶装置
JP2003132679A (ja) * 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
US7466160B2 (en) * 2002-11-27 2008-12-16 Inapac Technology, Inc. Shared memory bus architecture for system with processor and memory units
JP4419049B2 (ja) * 2003-04-21 2010-02-24 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
JP4068616B2 (ja) * 2003-12-26 2008-03-26 エルピーダメモリ株式会社 半導体装置
KR100626385B1 (ko) 2004-09-13 2006-09-20 삼성전자주식회사 반도체 메모리 장치 및 그것을 포함하는 멀티칩 패키지
KR100688514B1 (ko) 2005-01-05 2007-03-02 삼성전자주식회사 다른 종류의 ｍｃｐ를 탑재한 메모리 모듈
JP2006286048A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 半導体記憶装置
US20070170979A1 (en) * 2005-11-25 2007-07-26 Giovanni Campardo Charge pump systems and methods
JP2007180087A (ja) * 2005-12-27 2007-07-12 Seiko Epson Corp 集積回路装置
KR100798797B1 (ko) * 2006-06-30 2008-01-29 주식회사 하이닉스반도체 내부전압 발생장치를 구비하는 반도체메모리소자 및 그의구동방법
US7639540B2 (en) 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
CN101290896A (zh) * 2007-04-19 2008-10-22 矽品精密工业股份有限公司 可供堆叠的半导体装置及其制法
JP2008300469A (ja) * 2007-05-30 2008-12-11 Sharp Corp 不揮発性半導体記憶装置
EP2223421B1 (en) 2007-12-21 2015-01-21 SanDisk Technologies Inc. Self-configurable multi-regulator asic core power delivery
CN101904081B (zh) * 2007-12-21 2013-10-09 桑迪士克科技股份有限公司 用于专用集成电路核的多调压器电源递送系统
US7894230B2 (en) 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
US8400781B2 (en) * 2009-09-02 2013-03-19 Mosaid Technologies Incorporated Using interrupted through-silicon-vias in integrated circuits adapted for stacking

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